公开(公告)号：US20210320217A1

公开(公告)日：2021-10-14

申请号：US16844606

申请日：2020-04-09

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  John J. ELLIS-MONAGHAN ,  Vibhor JAIN ,  Ramsey HAZBUN ,  Pernell DONGMO ,  Cameron E. LUCE ,  Steven M. SHANK ,  Rajendran KRISHNASAMY

IPC: H01L31/107 ,  H01L31/0376 ,  H01L31/028 ,  H01L31/18

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an avalanche photodiode and methods of manufacture. The structure includes: a substrate material having a trench with sidewalls and a bottom composed of the substrate material; a first semiconductor material lining the sidewalls and the bottom of the trench; a photosensitive semiconductor material provided on the first semiconductor material; and a third semiconductor material provided on the photosensitive semiconductor material.

公开(公告)号：US20240072184A1

公开(公告)日：2024-02-29

申请号：US17895599

申请日：2022-08-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ramsey HAZBUN ,  John ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI ,  Rajendran KRISHNASAMY

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035281 ,  H01L31/18 ,  H01L31/028

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodetectors and methods of manufacture. The structure includes: a trench structure in a semiconductor substrate; at least one fin structure comprising semiconductor material which extends from a bottom of the trench structure; a photodetector material within the trench structure and extends from the at least one fin structure; a first contact connected to and on a first side of the photodetector material; and a second contact connected to the semiconductor substrate on a second side of the photodetector material.

公开(公告)号：US20230420596A1

公开(公告)日：2023-12-28

申请号：US17849285

申请日：2022-06-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： John J. ELLIS-MONAGHAN ,  Rajendran KRISHNASAMY ,  Siva P. ADUSUMILLI ,  Ramsey HAZBUN

IPC: H01L31/105 ,  H01L31/0288 ,  H01L31/18

CPC classification number: H01L31/105 ,  H01L31/0288 ,  H01L31/1804 ,  H01L31/0216

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photodetector and methods of manufacture. The structure includes: a photodetector; and a semiconductor material on the photodetector, the semiconductor material comprising a first dopant type, a second dopant type and intrinsic semiconductor material separating the first dopant type from the second dopant type.

公开(公告)号：US20220262900A1

公开(公告)日：2022-08-18

申请号：US17738179

申请日：2022-05-06

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Uzma RANA ,  Anthony K. STAMPER ,  Johnatan A. KANTAROVSKY ,  Steven M. SHANK ,  Siva P. ADUSUMILLI

IPC: H01L29/06 ,  H01L21/762 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/763 ,  H01L29/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a transistor with an embedded isolation layer in a bulk substrate and methods of manufacture. The structure includes: a bulk substrate; an isolation layer embedded within the bulk substrate and below a top surface of the bulk substrate; a deep trench isolation structure extending through the bulk substrate and contacting the embedded isolation layer; and a gate structure over the top surface of the bulk substrate and vertically spaced away from the embedded isolation layer, the deep trench isolation structure and the embedded isolation layer defining an active area of the gate structure in the bulk substrate.

公开(公告)号：US20220173211A1

公开(公告)日：2022-06-02

申请号：US17108543

申请日：2020-12-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Brett T. CUCCI ,  Siva P. ADUSUMILLI ,  Johnatan A. KANTAROVSKY ,  Claire E. KARDOS ,  Sen LIU

IPC: H01L29/06 ,  H01L21/764 ,  H01L21/768

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to airgap isolation structures and methods of manufacture. The structure includes: a bulk substrate material; a first airgap isolation structure in the bulk substrate material and having a first aspect ratio; and a second airgap isolation structure in the bulk substrate material and having a second aspect ratio different from the first aspect ratio.

公开(公告)号：US20220029032A1

公开(公告)日：2022-01-27

申请号：US16935854

申请日：2020-07-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mark D. LEVY ,  Edward W. KIEWRA ,  Siva P. ADUSUMILLI ,  John J. ELLIS-MONAGHAN

IPC: H01L29/868 ,  H01L29/06 ,  H01L29/66 ,  H01L31/107

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: a spiral fin structure comprising semiconductor substrate material and dielectric material; a photosensitive semiconductor material over sidewalls and a top surface of the spiral fin structure, the photosensitive semiconductor material positioned to capture laterally emitted incident light; a doped semiconductor material above the photosensitive semiconductor material; and contacts electrically contacting the semiconductor substrate material and the doped semiconductor material from a top surface thereof.

公开(公告)号：US20210335731A1

公开(公告)日：2021-10-28

申请号：US16855185

申请日：2020-04-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Vibhor JAIN ,  Ajay RAMAN ,  Sebastian T. VENTRONE ,  John J. ELLIS-MONAGHAN ,  Siva P. ADUSUMILLI ,  Yves T. NGU

IPC: H01L23/00

Abstract: The present disclosure relates to an active x-ray attack prevention structure for secure integrated circuits. In particular, the present disclosure relates to a structure including a functional circuit, and at least one latchup sensitive diode circuit configured to induce a latchup condition in the functional circuit, placed in proximity of the functional circuit.

公开(公告)号：US20210313373A1

公开(公告)日：2021-10-07

申请号：US16842080

申请日：2020-04-07

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. ADUSUMILLI ,  Vibhor JAIN ,  Alvin J. JOSEPH ,  Steven M. SHANK

IPC: H01L27/146

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodetectors with buried airgap mirror reflectors. The structure includes a photodetector and at least one airgap in a substrate under the photodetector.