摘要:
A cold spray apparatus having a powder preheating device, capable of obtaining high deposition rate and excellent coating layer under the same spray processing conditions by preheating coating powder before a coating process. Also, a manufacturing method of nano-structured super-high hardness WC—Co coating having high abrasive wear resistance and fracture toughness obtained by spraying WC—Co powder using the cold spray apparatus. In the cold spray apparatus, a gas controller controls gas supply amount of main gas and residual gas (gas that is not supplied toward the main gas), and a gas heater heats the main gas supplied under the control of the gas controller. A powder feeder receives the residual gas under the control of the gas controller and supplies a coating powder together with the residual gas. A powder preheating device preheats the coating powder supplied from the powder feeder, and a mixing chamber mixes the heated main gas with the preheated coating powder. A temperature controller adjusts temperature by controlling the powder preheating device and the gas heater, and the coating powder mixed in the mixing chamber is sprayed through a nozzle.
摘要:
Provided is a method for manufacturing a gear wheel, the method including: preparing an insertion unit formed of a steel material having a hollow pipe shape; injection-molding an outer side unit including teeth on an outer circumference; and molding a connection unit having a wheel shape by injecting resin into at least three points between the insertion unit and the outer side unit so as to connect the insertion unit and the outer side unit after arranging the insertion unit on the inner center of the outer side unit. According to the method, removing of an unnecessarily injected portion may be omitted since the resin is injected between the insertion unit and the outer side unit while injection-molding the connection unit. Also, productivity is increased by decreasing a number of defective products generated due to cracks.
摘要:
A method of fabricating a thin-film transistor (TFT) substrate includes forming a gate electrode on a substrate; forming an insulating film on the gate electrode; forming an amorphous semiconductor pattern on the insulating film; and forming a source electrode separated from a drain electrode on the amorphous semiconductor pattern; forming a light-concentrating layer, which includes a protrusion, on the amorphous semiconductor pattern, the source electrode, and the drain electrode; and crystallizing at least part of the amorphous semiconductor pattern by irradiating light to the protrusion of the light-concentrating layer.
摘要:
A spin transistor useful for device miniaturization and high-density integration is provided. The spin transistor includes: a semiconductor substrate including a channel layer; ferromagnetic source and drain disposed on the semiconductor substrate to be separated from each other and to be magnetized in a direction perpendicular to a surface of the channel layer; a gate formed on the semiconductor substrate between the source and the drain to adjust spins of electrons passing through the channel layer, wherein spin-polarized electrons are injected from the source to the channel layer, and the electrons injected into the channel layer pass though the channel layer and are injected into the drain, and wherein the spins of the electrons passing through the channel layer undergo precession due to a spin-orbit coupling induced magnetic field according to a voltage of the gate.
摘要:
A method and system includes a terminal having a function of receiving a DMB data broadcast, a service network information (SNI) application management server that transmits SNI to the mobile communication terminal in response to a request from the mobile communication terminal, a data broadcast server that provides information regarding the DMB data broadcast, a DMB transmitting station that transmits the information regarding the DMB data broadcast, and a Transport Protocol Experts Group (TPEG) service provider that provides the SNI to the SNI management server, and data broadcast information including the SNI to the data broadcast server. The mobile communication terminal receives the SNI from the SNI management server via a cellular network to determine the time when a user's desired data broadcast starts, and receives a data broadcast from the DMB transmitting station only at that time.
摘要:
A protrusion of dry-etched pattern of a thin film transistor substrate generated due to a difference between isotropy of wet etching and anisotropy of dry etching is removed by forming a plating part on a surface of the wet etched pattern through an electroless plating method. If the plating part is formed on a data pattern layer of the substrate, the width or the thickness of the data pattern layer may be increased without loss of aperture ratio, the channel length of the semiconductor layer may be reduced under the limit according to the stepper resolution and the protrusion part of the semiconductor layer may be removed. As a result, the aperture ratio may be increased, the resistance may be reduced, and the driving margin may be increased due to rising of the ion current. Furthermore, the so-called water-fall noise phenomenon may be eliminated.
摘要:
Provided are an apparatus and method of automatic conversion to a digital zoom mode allowing a digital zoom to be executed by automatically converting to a highest resolution mode supporting the digital zoom when a digital zoom key is pushed, in a high-resolution mode that a wireless communication terminal does not support such a digital zoom. The apparatus includes a key pad having a digital zoom key, a video processing unit for processing video data from the camera unit to determine a resolution and execute a digital zoom function, and a control unit for controlling the video processing unit to convert a resolution mode that does not support the digital zoom function to a highest resolution mode among resolution modes supporting the digital zoom function and execute the digital zoom function when the digital zoom key is pressed in the resolution mode that does not support the digital zoom function.
摘要:
An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the amorphous silicon layer, and a transfer gate formed over the substrate adjacent to the photodiode and transferring photoelectrons received from the photodiode.
摘要:
Provided is a method for manufacturing a gear wheel, the method including: preparing an insertion unit formed of a steel material having a hollow pipe shape; injection-molding an outer side unit including teeth on an outer circumference; and molding a connection unit having a wheel shape by injecting resin into at least three points between the insertion unit and the outer side unit so as to connect the insertion unit and the outer side unit after arranging the insertion unit on the inner center of the outer side unit. According to the method, removing of an unnecessarily injected portion may be omitted since the resin is injected between the insertion unit and the outer side unit while injection-molding the connection unit. Also, productivity is increased by decreasing a number of defective products generated due to cracks.
摘要:
A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.