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21.发明申请公开(公告)号：US20060125041A1
公开(公告)日：2006-06-15
申请号：US11296152
申请日：2005-12-06
IPC分类号： H01L27/095
CPC分类号： H01L29/66659 , H01L21/26586 , H01L21/28052 , H01L21/28202 , H01L29/495 , H01L29/518 , H01L29/665 , H01L29/66643 , H01L29/7835 , H01L29/7839
摘要： A transistor using impact ionization and a method of manufacturing the same are provided. A gate dielectric layer, a gate, and first and second spacers are formed on a semiconductor substrate. A first impurity layer is formed spaced from the first spacer and a second impurity layer is formed expanding and overlapping with the second spacer therebelow, by performing slant ion-implantation on the semiconductor substrate using the gate and the first and second spacers as a mask. A source and a drain are formed on the semiconductor substrate to be self-aligned with the first and second spacers, respectively, thereby defining an ionization region between the source and the drain in the semiconductor substrate. The source includes a first silicide layer to form a schottky junction with the ionization region. The drain includes a portion of the second impurity layer overlapping with the second spacer and a second silicide layer which is aligned with the second spacer to form an ohmic contact with the second impurity layer.
摘要翻译： 提供了使用冲击电离的晶体管及其制造方法。 栅极电介质层，栅极以及第一和第二间隔物形成在半导体衬底上。 第一杂质层与第一间隔物隔开形成，并且通过使用栅极和第一和第二间隔物作为掩模在半导体衬底上进行倾斜离子注入，形成第二杂质层与其间的第二间隔物膨胀和重叠。 源极和漏极分别形成在半导体衬底上以与第一和第二间隔物自对准，由此在半导体衬底中的源极和漏极之间限定电离区域。 源包括与电离区形成肖特基结的第一硅化物层。 漏极包括与第二间隔物重叠的第二杂质层的一部分和与第二间隔物对准的第二硅化物层以与第二杂质层形成欧姆接触。
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公开(公告)号：US20060000698A1
公开(公告)日：2006-01-05
申请号：US11048742
申请日：2005-02-03
IPC分类号： H01H19/00
CPC分类号： D06F39/005 , H01H19/025 , Y10T29/49599 , Y10T29/49826 , Y10T29/49885 , Y10T29/49995
摘要： A dial knob of a washing machine is provided. In the dial knob, a dial is inserted into a center part of a knob guard, and a periphery edge of the knob is formed to be lustrous. A lamp window body is securely attached on a rear surface of the knob guard. The knob guard is formed of an aluminum material. Thereafter, a front surface of the knob guard is formed to be lusterless and an edge of the front surface is formed to be lustrous. Finally, the dial is connected to the lamp window body.
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公开(公告)号：US20050285226A1
公开(公告)日：2005-12-29
申请号：US11159733
申请日：2005-06-23
申请人： Seong Lee
发明人： Seong Lee
IPC分类号： H01L27/04 , H01L21/02 , H01L23/522 , H01L27/06 , H01L31/062
CPC分类号： H01L27/0688 , H01L23/5223 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a parallel capacitor of a semiconductor device. According to the present invention, a first capacitor and a second capacitor are formed in different layers of the same region, wherein a metal layer connected to an upper electrode of the first capacitor is formed in the same layer as a metal layer connected to a lower electrode of the second capacitor. Thus, twp capacitors can be connected in parallel only with a metal layer composed of three layers. Accordingly, the present invention is advantageous in that it can reduce process steps for forming multiple metal layers, lower a step and cut manufacture cost.
摘要翻译： 这里公开了半导体器件的并联电容器。 根据本发明，第一电容器和第二电容器形成在相同区域的不同层中，其中连接到第一电容器的上电极的金属层形成在与连接到下层的金属层相同的层中 第二电容器的电极。 因此，两个电容器可以仅与由三层组成的金属层并联连接。 因此，本发明的优点在于可以减少形成多个金属层的工艺步骤，降低步骤并降低制造成本。
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公开(公告)号：US20050227568A1
公开(公告)日：2005-10-13
申请号：US11145936
申请日：2005-06-07
CPC分类号： H01L51/0009
摘要： In a method for fabricating an organic electroluminescent display, a first electrode layer is formed on a transparent substrate, and a hole transport layer is formed on the first electrode layer. After an organic luminescent layer is formed on the hole transport layer by scanning a donor film disposed on the substrate using a laser beam, the donor film is removed and then a second electrode is formed on the organic luminescent layer. The laser beam dithers while performing the scanning operation to make the energy distribution uniform.
摘要翻译： 在制造有机电致发光显示器的方法中，在透明基板上形成第一电极层，并且在第一电极层上形成空穴传输层。 在通过使用激光束扫描设置在基板上的供体膜而在空穴传输层上形成有机发光层之后，去除施主膜，然后在有机发光层上形成第二电极。 激光束在执行扫描操作时抖动以使能量分布均匀。
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25.发明申请公开(公告)号：US20050203725A1
公开(公告)日：2005-09-15
申请号：US10997539
申请日：2004-11-23
申请人： Patrick Jenny , Seong Lee , Hamdi Tchelepi
发明人： Patrick Jenny , Seong Lee , Hamdi Tchelepi
IPC分类号： G01V11/00 , G06F17/50 , G06G20060101 , G06G7/48
CPC分类号： E21B49/00 , E21B43/00 , G01V11/00 , G06F17/5018 , G06F2217/16
摘要： A multi-scale finite-volume (MSFV) method to solve elliptic problems with a plurality of spatial scales arising from single or multi-phase flows in porous media is provided. The method efficiently captures the effects of small scales on a coarse grid, is conservative, and treats tensor permeabilities correctly. The underlying idea is to construct transmissibilities that capture the local properties of a differential operator. This leads to a multi-point discretization scheme for a finite-volume solution algorithm. Transmissibilities for the MSFV method are preferably constructed only once as a preprocessing step and can be computed locally.
摘要翻译： 提供了一种多尺度有限体积（MSFV）方法，用于解决多孔介质中单相或多相流产生的多个空间尺度的椭圆问题。 该方法有效地捕获了小格子对粗网格的影响，是保守的，并且正确地对待张量渗透率。 基本思想是构建捕获差分算子的局部属性的透射率。 这导致了用于有限体积解算法的多点离散化方案。 MSFV方法的透射优选仅作为预处理步骤构造一次，并且可以在本地计算。
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公开(公告)号：US20050169562A1
公开(公告)日：2005-08-04
申请号：US11044294
申请日：2005-01-28
CPC分类号： F16C9/04 , F16C11/0633 , F16C33/201 , F16J1/22 , Y10T403/32631
摘要： The present invention discloses a bearing assembly capable of assuring mechanical strength and reducing a friction coefficient and stress concentration, and a method for manufacturing the same. The present invention comprises a spherical journal and a hemispherical bearing that is made of a fiber reinforced composite and has a bearing surface for establishing a spherical pair with the spherical journal. The fiber reinforced composite can be constructed by arranging a uni-directional prepreg, woven fiber prepregs and staple-fiber prepregs in a variety of configurations, and thermoplastic resin particles or self-lubrication particles are uniformly provided on the bearing surface. It is possible to alleviate stress concentration generated on the bearing surface by forming a plurality of air channels capable of imparting directivity on an outer surface of the hemispherical bearing.
摘要翻译： 本发明公开了一种能够确保机械强度并降低摩擦系数和应力集中度的轴承组件及其制造方法。 本发明包括球形轴颈和半球形轴承，该轴承由纤维增强复合材料制成并且具有用于与球形轴颈建立球形对的支承表面。 纤维增强复合材料可以通过以各种构造布置单向预浸料坯料，编织纤维预浸料坯料和短纤维预浸料坯而构成，并且热塑性树脂颗粒或自润滑颗粒均匀地设置在轴承表面上。 通过形成能够赋予半球形轴承的外表面方向性的多个空气通道，可以减轻在轴承表面上产生的应力集中。
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公开(公告)号：US06823297B2
公开(公告)日：2004-11-23
申请号：US10383908
申请日：2003-03-06
申请人： Patrick Jenny , Seong Lee , Hamdi A. Tchelepi
发明人： Patrick Jenny , Seong Lee , Hamdi A. Tchelepi
IPC分类号： G06G748
CPC分类号： G06F17/5018 , G01V11/00 , G06F2217/16
摘要： A multi-scale finite-volume (MSFV) method to solve elliptic problems with a plurality of spatial scales arising from single or multi-phase flows in porous media is provided. Two sets of locally computed basis functions are employed. A first set of basis functions captures the small-scale heterogeneity of the underlying permeability field, and it is computed to construct the effective coarse-scale transmissibilities. A second set of basis functions is required to construct a conservative fine-scale velocity field. The method efficiently captures the effects of small scales on a coarse grid, is conservative, and treats tensor permeabilities correctly. The underlying idea is to construct transmissibilities that capture the local properties of a differential operator. This leads to a multi-point discretization scheme for a finite-volume solution algorithm. Transmissibilities for the MSFV method are preferably constructed only once as a preprocessing step and can be computed locally. Therefore, this step is well suited for massively parallel computers. Furthermore, a conservative fine-scale velocity field can be constructed from a coarse-scale pressure solution which also satisfies the proper mass balance on the fine scale. A transport problem is ideally solved iteratively in two stages. In the first stage, a fine scale velocity field is obtained from solving a pressure equation. In the second stage, the transport problem is solved on the fine cells using the fine-scale velocity field. A solution may be computed on the coarse cells at an incremental time and properties, such as a mobility coefficient, may be generated for the fine cells at the incremental time. If a predetermined condition is not met for all fine cells inside a dual coarse control volume, then the dual and fine scale basis functions in that dual coarse control volume are reconstructed.
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28.发明申请公开(公告)号：US20070128781A1
公开(公告)日：2007-06-07
申请号：US11502948
申请日：2006-08-11
IPC分类号： H01L21/338
CPC分类号： H01L29/458 , H01L29/517 , H01L29/66643
摘要： Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same. The method includes the steps of: preparing a substrate; forming an active silicon layer on the substrate; forming a gate insulating layer on a region of the silicon layer; forming a gate electrode on the gate insulating layer; implanting ions into the silicon layer on which the gate insulating layer is not formed; and annealing the ion-implanted silicon layer. Accordingly, it is possible to manufacture the Schottky barrier tunnel transistor having stable characteristics and high performance by implanting the ions into the silicon layer using an ion implantation method and then annealing the silicon layer to form metal-silicide.
摘要翻译： 提供了一种肖特基势垒隧道晶体管及其制造方法。 该方法包括以下步骤：制备衬底; 在衬底上形成有源硅层; 在所述硅层的区域上形成栅极绝缘层; 在栅极绝缘层上形成栅电极; 将离子注入未形成栅极绝缘层的硅层中; 并对离子注入的硅层退火。 因此，通过使用离子注入法将离子注入硅层，然后使硅层退火以形成金属硅化物，可以制造具有稳定特性和高性能的肖特基势垒隧道晶体管。
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公开(公告)号：US20070105259A1
公开(公告)日：2007-05-10
申请号：US11591455
申请日：2006-11-02
申请人： Jong Won , Masayoshi Koike , Jae Han , Seong Lee
发明人： Jong Won , Masayoshi Koike , Jae Han , Seong Lee
IPC分类号： H01L21/205
CPC分类号： C30B29/403 , C30B25/02 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method for growing a high quality indium gallium nitride by metal organic chemical vapor deposition (MOCVD) is provided. In the method, the indium gallium nitride grows at a growth rate of at least about 1.5 nm/min at a temperature of at least about 800° C. while an internal pressure of an MOCVD reactor is maintained at about 400 mbar or less.
摘要翻译： 提供了通过金属有机化学气相沉积（MOCVD）生长高品质氮化铟镓的方法。 在该方法中，氮化镓铟在至少约800℃的温度下以至少约1.5nm / min的生长速率生长，同时MOCVD反应器的内部压力保持在约400毫巴或更小。
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公开(公告)号：US20070069234A1
公开(公告)日：2007-03-29
申请号：US11525012
申请日：2006-09-22
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/20 , H01S5/2009 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier layer and at least one quantum well layer. Also, a current spreading layer is interposed between the first conductivity type nitride layer and the active layer. The current spreading layer has an In content greater than the quantum well layer of the active layer.
摘要翻译： 提供一种氮化物半导体器件。 在器件中，形成第一和第二导电型氮化物层。 在第一和第二导电型氮化物层之间形成有源层。 有源层包括至少一个量子势垒层和至少一个量子阱层。 而且，在第一导电型氮化物层和有源层之间插入电流扩散层。 当前的扩散层的In含量大于有源层的量子阱层。
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