公开(公告)号：US06436203B1

公开(公告)日：2002-08-20

申请号：US09551393

申请日：2000-04-18

申请人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

发明人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

IPC分类号： B05D136

CPC分类号： C23C16/4481 ,  C23C16/18 ,  C23C16/20 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574

摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

摘要翻译： 本发明提供了用于形成Al / Cu多层膜的CVD装置和CVD方法。 在包括用于放置半导体晶片W的室，用于安装半导体晶片W的基座的CVD装置中形成Al / Cu多层膜，用于将气化的Al原料引入到室中的Al原料供给系统 Cu原料供给系统，用于将气化的Cu原料引入室中。 Al / Cu多层膜通过重复一系列步骤而形成，该步骤包括将Al原料气体引入室中，通过CVD法将Al膜沉积在半导体晶片W上，随后在室中产生等离子体，其中 引入Cu原料气体并通过CVD法将Cu膜沉积在半导体晶片W上。 对这样得到的Al / Cu多层膜进行加热处理（退火），形成所需的Al / Cu多层膜。

公开(公告)号：US20090197410A1

公开(公告)日：2009-08-06

申请号：US12306096

申请日：2007-06-21

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L21/443

CPC分类号： C23C16/34 ,  C23C16/52 ,  H01L21/28097 ,  H01L21/28556 ,  H01L29/4975 ,  H01L29/517

摘要： A substrate is disposed in a processing chamber. An organic Ta compound gas having Ta═N bond, a Si-containing gas and a N-containing gas are introduced into the processing chamber to form a TaSiN film on the substrate by CVD. In this film formation, at least one of a partial pressure of the Si-containing gas in the processing chamber, a total pressure in the processing chamber, a film forming temperature and a partial pressure of the N-containing gas in the processing chamber is controlled to thereby regulate Si concentration in the film. Particularly, when SiH4 gas is used as the Si-containing gas, the SiH4 gas partial pressure is determined based on the fact that the serried Si concentration in the film under giving process conditions can be expressed as a linear function involving the logarithm of the partial pressure of the SiH4 gas.

摘要翻译： 衬底设置在处理室中。 将具有Ta-N键的有机Ta化合物气体，含Si气体和含N气体引入到处理室中，通过CVD在衬底上形成TaSiN膜。 在该膜形成中，处理室中的含Si气体的分压，处理室中的总压，成膜温度和处理室中的含N气体的分压中的至少一个为 从而调节膜中的Si浓度。 特别地，当使用SiH 4气体作为含Si气体时，SiH 4气体分压基于以下事实来确定：在给定工艺条件下膜中的塞状Si浓度可以表示为包括部分的对数的线性函数 SiH4气体的压力。

公开(公告)号：US07482283B2

公开(公告)日：2009-01-27

申请号：US10450161

申请日：2001-12-11

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L21/44 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45565 ,  C23C16/0218 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/52 ,  H01J37/32935 ,  H01L21/28556 ,  H01L21/28568

摘要： The present invention relates to a method and apparatus for forming a thin film using the ALD process. Prior to the ALD process where each of a plurality of source gasses is supplied one by one, plural times, a pretreatment process is performed in which the source gasses are simultaneously supplied to shorten an incubation period and improve throughput.

摘要翻译： 本发明涉及使用ALD工艺形成薄膜的方法和装置。 在ALD过程之前，一个接一个地提供多个源气体中的每一个，多次进行预处理过程，其中同时供给源气体以缩短潜伏期并提高生产量。

公开(公告)号：US20090142491A1

公开(公告)日：2009-06-04

申请号：US11988298

申请日：2006-07-07

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： C23C16/44

CPC分类号： C23C16/46 ,  C23C16/34 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/76843

摘要： The present invention is a method of film deposition that comprises a first gas-supplying step of supplying a high-melting-point organometallic material gas to a processing vessel that can be evacuated, and a second gas-supplying step of supplying, to the processing vessel, a gas consisting of one, or two or more gases selected from a nitrogen-containing gas, a silicon-containing gas, and a carbon-containing gas, wherein a thin metallic compound film composed of one, or two or more compounds selected from a high-melting-point metallic nitride, a high-melting-point metallic silicate, and a high-melting-point metallic carbide is deposited on the surface of an object to be processed, placed in the processing vessel. The first and second gas-supplying steps are alternately carried out, and in these steps, the object to be processed is held at a temperature equal to or higher than the decomposition-starting temperature of the high-melting-point organometallic material.

摘要翻译： 本发明是一种薄膜沉积方法，其包括向能够抽真空的处理容器供给高熔点有机金属材料气体的第一气体供给步骤和向处理过程中供给第二气体供给步骤 容器，由选自含氮气体，含硅气体和含碳气体中的一种或两种或更多种气体组成的气体，其中选择由一种或两种或更多种化合物组成的薄金属化合物膜 从高熔点金属氮化物，高熔点金属硅酸盐和高熔点金属碳化物沉积在被处理物体的表面上，放置在处理容器中。 交替进行第一和第二供气步骤，在这些步骤中，待处理物体保持在高熔点有机金属材料的分解 - 起始温度以上的温度。

公开(公告)号：US07189431B2

公开(公告)日：2007-03-13

申请号：US10711717

申请日：2004-09-30

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  Paul Jamison

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  Paul Jamison

IPC分类号： C23C16/16

CPC分类号： H01L21/28556 ,  C23C16/16 ,  H01L21/28079 ,  H01L21/28247 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76856 ,  H01L29/517

摘要： A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.

摘要翻译： 用于形成钝化金属层的方法，其在随后暴露于含氧环境期间保持下面的金属层的性质和形态。 该方法包括在处理室中提供衬底，将衬底暴露于含有铼 - 羰基前体的工艺气体，以在化学气相沉积工艺中在衬底上沉积铼金属层，以及在铼金属层上形成钝化层 从而抑制铼金属表面上含铼结核的氧诱导生长。

公开(公告)号：US06966936B2

公开(公告)日：2005-11-22

申请号：US10277914

申请日：2002-10-23

申请人： Hideaki Yamasaki ,  Yumiko Kawano ,  Kenichi Kubo ,  Susumu Arima

发明人： Hideaki Yamasaki ,  Yumiko Kawano ,  Kenichi Kubo ,  Susumu Arima

IPC分类号： B01D53/64 ,  C23C16/18 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/31 ,  H01L21/3205 ,  H01L23/52 ,  B01D45/08

CPC分类号： C23C16/18 ,  C23C16/4412 ,  C23C16/45593 ,  H01L21/28556 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S55/15

摘要： An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel (10) for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit (12) for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (10), and an evacuating system (14) for evacuating the processing vessel (10). The evacuating system (14) includes a vacuum pump (26), a high-temperature trapping device (28) disposed above the vacuum pump (26) with respect to the flowing direction of a gas, and a low-temperature trapping device (30) disposed below the vacuum pump with respect to the flowing direction of a gas. The high-temperature trapping device (28) decomposes the unused Cu(I)hfacTMVS contained in a gas sucked out of the processing vessel (10) to trap metallic copper. The low-temperature trapping device traps Cu(II)(hfac)2 produced as a reaction byproduct.

摘要翻译： 本发明的目的是为了确保真空泵的稳定运行，用于从低压处理室排出未使用的源气体和反应副产物气体，以有效地回收反应副产物以有效利用资源并减少运行 费用 低压CVD系统具有用于进行用于形成铜膜的低压CVD工艺的处理容器（10），用于供应有机铜化合物作为源气体的源气体供给单元（12），例如Cu （I）hfacTMVS进入处理容器（10），以及用于抽空处理容器（10）的抽空系统（14）。 抽真空系统（14）包括真空泵（26），相对于气体的流动方向设置在真空泵（26）上方的高温捕集装置（28）和低温捕集装置（30） ）相对于气体的流动方向设置在真空泵下方。 高温捕集装置（28）分解从处理容器（10）中吸出的气体中所含的未使用的Cu（I）hfacTMVS，以捕获金属铜。 低温捕获装置捕获作为反应副产物产生的Cu（II）（hfac）2 。

公开(公告)号：US06919268B1

公开(公告)日：2005-07-19

申请号：US10451598

申请日：2001-12-25

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76877 ,  H01L21/28556 ,  H01L21/28568

摘要： WF6 is used as a source gas of tungsten, and NH3 is used as a source gas of nitrogen. The partial pressure of WF6 is set to be higher than that of NH3. The substrate temperature is set to about 400° C. to 450° C. Tungsten nitride is deposited and then heated, to form a contact plug (106).

摘要翻译： WF 6用作钨的源气体，NH 3被用作氮的源气体。 WF 6分压的分压设定为高于NH 3的分压。 衬底温度设定为约400℃至450℃。沉积氮化钨，然后加热，形成接触塞（106）。

公开(公告)号：US06797068B1

公开(公告)日：2004-09-28

申请号：US10049283

申请日：2002-02-11

申请人： Hideaki Yamasaki ,  Takashi Mochizuki ,  Susumu Arima ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Takashi Mochizuki ,  Susumu Arima ,  Yumiko Kawano

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/45589 ,  C23C16/4585 ,  H01L21/68721 ,  H01L21/68735

摘要： A film-forming unit of the invention includes a processing container in which a vacuum can be created, a stage arranged in the processing container, on which an object to be processed is placed, a process-gas supplying means for supplying a process gas into the processing container, and a heating means for heating the object to be processed placed on the stage. A division wall surrounds a lateral side and a lower side of the stage. An inert gas is introduced into a stage-side region surrounded by the division wall, by an inert-gas supplying means. A gap-forming member is arranged in such a manner that its inner peripheral portion is arranged above a peripheral portion of the object to be processed placed on the stage via a gap and its outer peripheral portion is arranged above the division wall via a gap.

摘要翻译： 本发明的成膜单元包括其中可以产生真空的处理容器，设置在处理容器中的待处理物体的阶段，用于将处理气体供应到处理气体供应装置 处理容器和用于加热被放置在台架上的待处理物体的加热装置。 分隔壁围绕台的侧面和下侧。 通过惰性气体供给装置将惰性气体引入由分隔壁包围的载物台侧区域。 间隙形成构件被布置成使得其内周部分经由间隙布置在待处理物体的周边部分上，并且其外周部分经由间隙布置在分隔壁的上方。

公开(公告)号：US06486063B2

公开(公告)日：2002-11-26

申请号：US09793896

申请日：2001-02-28

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device manufacturing method, an interlevel insulating film is formed on a silicon substrate. A trench is formed in the interlevel insulating film. A lower underlying film made of a tungsten-based material is formed by thermal chemical vapor deposition to cover a bottom surface and side surface of the trench. An upper underlying film made of a tungsten-based material is formed by thermal chemical vapor deposition on an entire region on the lower underlying film. A copper film made of copper fills the trench. The upper underlying film is formed in accordance with thermal chemical vapor deposition by supplying a tungsten source gas and the other source gas such that the other source gas is supplied in an amount lager than that of the tungsten source gas. The lower underlying film is formed in accordance with thermal chemical vapor deposition by increasing a content of the tungsten source gas to be larger than to that of the other source gas in formation of the lower underlying film.

摘要翻译： 在半导体器件制造方法中，在硅衬底上形成层间绝缘膜。 在层间绝缘膜中形成沟槽。 通过热化学气相沉积形成由钨基材料制成的下基底膜以覆盖沟槽的底表面和侧表面。 由钨基材料制成的上基底膜通过热化学气相沉积形成在下层薄膜上的整个区域上。 由铜制成的铜膜填充沟槽。 根据热化学气相沉积，通过供给钨源气体和其它原料气体，使得其它源气体的供给量比钨源气体的量大，形成上层膜。 根据热化学气相沉积，通过将钨源气体的含量大于其它源气体的含量来形成下基底膜，以形成下基底膜。

公开(公告)号：US06089184A

公开(公告)日：2000-07-18

申请号：US92060

申请日：1998-06-05

申请人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

发明人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

IPC分类号： C23C16/18 ,  C23C16/20 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/4481 ,  C23C16/18 ,  C23C16/20 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574

摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.