公开(公告)号：US20090311820A1

公开(公告)日：2009-12-17

申请号：US12548918

申请日：2009-08-27

Applicant: Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

Inventor： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

IPC: H01L31/18

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.

Abstract translation: 具有高灵敏度的固态成像装置和获得小型化像素的结构，以及其中界面稳定的固态成像装置的制造方法，光谱特性优异并且可以用 提供高产率。 固态成像装置至少包括形成有光传感器部分的硅层和形成在硅层的表面侧的布线层，并且使光L从相对的背面侧进入 到硅层的表面侧，硅层4的厚度为10μm以下。 此外，制造固态成像装置的方法至少包括以下步骤：在硅衬底，中间层和硅层的层叠衬底的硅层中形成光电传感器部分的半导体区域 层压; 将第一支撑衬底接合到所述硅层上; 去除硅衬底和中间层; 然后形成硅层上方的布线部分; 将第二支撑基板接合到布线部分上，并且移除第一支撑基板以使硅层暴露。

公开(公告)号：US20090072275A1

公开(公告)日：2009-03-19

申请号：US12323006

申请日：2008-11-25

Applicant: Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

Inventor： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC: H01L27/148

CPC classification number: H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

公开(公告)号：US07473977B2

公开(公告)日：2009-01-06

申请号：US10548182

申请日：2004-03-05

Applicant: Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

Inventor： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC: H01L31/06

CPC classification number: H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

Abstract: A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way.The solid-state imaging device has such a structure that an electrode 8 for reading a signal charge is provided on one side of a light-receiving sensor portion 11 constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film 9 formed to cover an image pickup area except the light-receiving sensor portion 11; a second-conductivity-type semiconductor area 6 is formed in the center on the surface of a first-conductivity-type semiconductor area 2 constituting a photo-electric conversion area of the light-receiving sensor portion 11; and areas 10 (10A, 10B) containing a lower impurity concentration than that of the second-conductivity-type semiconductor area 6 is formed on the surface of the first-conductivity-type semiconductor area 2 at the end on the side of the electrode 8 and at the opposite end on the side of a pixel-separation area 3.

Abstract translation: 通过以良好平衡的方式改善噪声特性和读出特性，提供具有令人满意的噪声特性和读出特性的固态成像装置。 固态成像装置具有这样的结构，即在构成像素的光接收传感器部分11的一侧设置用于读取信号电荷的电极8; 将预定电压信号V施加到形成为覆盖除了光接收传感器部分11之外的图像拾取区域的遮光膜9; 第二导电型半导体区域6形成在构成光接收传感器部11的光电转换区域的第一导电型半导体区域2的表面上的中心; 并且在第一导电型半导体区域2的电极8侧的端部的表面上形成包含比第二导电型半导体区域6的杂质浓度低的区域10（10A，10B） 并且在像素分离区域3侧的相对端。

公开(公告)号：US20070292984A1

公开(公告)日：2007-12-20

申请号：US11891535

申请日：2007-08-10

Applicant: Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

Inventor： Keiji Tatani ,  Hideshi Abe ,  Masanori Ohashi ,  Atsushi Masagaki ,  Atsuhiko Yamamoto ,  Masakazu Furukawa

IPC: H01L31/18

CPC classification number: H01L27/14601 ,  H01L27/1463 ,  H01L27/14689

Abstract: A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

Abstract translation: 固态成像装置包括二维排列在设置在半导体基板上的阱区域中的多个像素，每个像素包括具有积累信号电荷的电荷累积区域的光电转换部分; 元件隔离层，其沿着各个电荷累积区域的周边设置在阱区域的表面上，并且将各个像素彼此电隔离; 以及扩散层，其设置在元件隔离层下方，并且将各个像素彼此电隔离，所述扩散层的宽度小于元件隔离层的宽度。 每个电荷累积区域设置成在元件隔离层的下方延伸并与扩散层接触或接近扩散层。

公开(公告)号：US20060170009A1

公开(公告)日：2006-08-03

申请号：US10548182

申请日：2004-03-05

Applicant: Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

Inventor： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC: H01L29/768

CPC classification number: H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

Abstract: A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way. The solid-state imaging device has such a structure that an electrode 8 for reading a signal charge is provided on one side of a light-receiving sensor portion 11 constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film 9 formed to cover an image pickup area except the light-receiving sensor portion 11; a second-conductivity-type semiconductor area 6 is formed in the center on the surface of a first-conductivity-type semiconductor area 2 constituting a photo-electric conversion area of the light-receiving sensor portion 11; and areas 10 (10A, 10B) containing a lower impurity concentration than that of the second-conductivity-type semiconductor area 6 is formed on the surface of the first-conductivity-type semiconductor area 2 at the end on the side of the electrode 8 and at the opposite end on the side of a pixel-separation area 3.

Abstract translation: 通过以良好平衡的方式改善噪声特性和读出特性，提供具有令人满意的噪声特性和读出特性的固态成像装置。 固态成像装置具有这样的结构，即在构成像素的光接收传感器部分11的一侧设置用于读取信号电荷的电极8; 将预定电压信号V施加到形成为覆盖除了光接收传感器部分11之外的图像拾取区域的遮光膜9; 第二导电型半导体区域6形成在构成光接收传感器部11的光电转换区域的第一导电型半导体区域2的表面上的中心; 并且在第一导电型半导体区域2的表面上形成包含比第二导电型半导体区域6低的杂质浓度的区域10（10A，10B） 电极8并且位于像素分离区域3侧的相对端。

公开(公告)号：US20050151157A1

公开(公告)日：2005-07-14

申请号：US11074041

申请日：2005-03-08

Applicant: Yasushi Maruyama ,  Hideshi Abe

Inventor： Yasushi Maruyama ,  Hideshi Abe

IPC: H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H01L31/0216 ,  H01L31/0224 ,  H04N5/335 ,  H04N5/341 ,  H04N5/361 ,  H04N5/365 ,  H04N5/369 ,  H04N5/3722 ,  H01L21/00

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14806 ,  H01L31/02164 ,  H01L31/022408 ,  Y10S257/929

Abstract: There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) includes a light-receiving sensor section disposed on the surface layer portion of a substrate (21) that performs a photoelectric conversion, a charge transfer section that transfers a signal charge read out from the light-receiving sensor section, a transfer electrode (27) (28) made of polysilicon formed on a substrate (21) at a position approximately above the charge transfer section through an insulating film (26), and an interconnection made of polysilicon and interconnected to the transfer electrode (27) (28). At least one of the polysilicon transfer electrode (27)(28) and the interconnection is formed on a polysilicon layer (27a) (28a) by selectively depositing a high-melting point metal having a resistance value lower than that of polysilicon. Also, there is provided a solid-state imaging device in which a fluctuation of a work function of the transfer electrode can be avoided and a manufacturing method thereof. The solid-state imaging device (10) comprises a buffer layer (1) containing a metal silicide layer (16) is formed between the transfer electrodes (3), (4) and a shunt interconnection layer (7) formed of a metal layer.

Abstract translation: 需要能够高速驱动并且可以防止引起灵敏度和照度缺陷的阴影的固态成像装置。 固态成像装置（20）包括设置在执行光电转换的基板（21）的表层部分上的光接收传感器部分，电荷转移部分，其将从光接收读出的信号电荷 传感器部分，通过绝缘膜（26）在大致高于电荷转移部分的位置处形成在基板（21）上的由多晶硅制成的转移电极（27）（28），以及由多晶硅制成的互连到互连 电极（27）（28）。 通过选择性地沉积具有比多晶硅低的电阻值的高熔点金属，在多晶硅层（27a）（28a）上形成多晶硅转移电极（27）（28）和互连中的至少一个。 另外，提供了可以避免转移电极的功函数波动的固态成像装置及其制造方法。 固态成像装置（10）包括在转移电极（3），（4）和由金属层形成的分流互连层（7）之间形成有包含金属硅化物层（16）的缓冲层（1） 。

公开(公告)号：US06599772B2

公开(公告)日：2003-07-29

申请号：US09826144

申请日：2001-04-04

Applicant: Hideshi Abe

Inventor： Hideshi Abe

IPC: H01L27148

CPC classification number: H01L27/14887 ,  H01L27/14812 ,  H01L27/14818 ,  Y10S438/916

Abstract: A solid-state pickup element achieves both improvement in sensitivity and reduction of pixel size and a method thereof, includes a first conductive type semiconductor area, which is formed at least so as to include the inside of the semiconductor substrate upward of the overflow barrier area inside the semiconductor substrate, and a charge accumulating area at the position corresponding to the first conductive type semiconductor area of the light receptive sensor part in the epitaxial layer on the semiconductor substrate. An overflow barrier area is formed in the semiconductor substrate, and the first conductive type semiconductor area is formed on the surface, respectively, wherein an epitaxial layer is formed on the semiconductor substrate, and a charge accumulating area is formed at the position corresponding to the first conductive type semiconductor area on the surface side of the epitaxial layer, thereby producing a solid-state pickup element.

Abstract translation: 固体拾取元件既可实现灵敏度的提高，也可实现像素尺寸的缩小，其方法包括：第一导电型半导体区域，其至少形成为将半导体衬底的内部包围在溢流阻挡区域的上方 以及与半导体衬底上的外延层中的光接收传感器部分的第一导电类型半导体区域对应的位置处的电荷累积区域。 在半导体衬底中形成溢出屏障区域，并且在表面上分别形成第一导电型半导体区域，其中在半导体衬底上形成外延层，并且在对应于半导体衬底的位置形成电荷累积区域 在外延层的表面侧的第一导电型半导体区域，由此产生固态拾取元件。

公开(公告)号：US06521920B2

公开(公告)日：2003-02-18

申请号：US09750005

申请日：2000-12-27

Applicant: Hideshi Abe

Inventor： Hideshi Abe

IPC: H01L27148

CPC classification number: H01L27/14601 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14806 ,  H01L29/76816

Abstract: A solid state image sensor is provided with a primary first-conductivity-type semiconductive region which serves as a charge storage region of a photo-sensing area and a secondary first-conductivity-type semiconductive region for enlarging a charge collecting region of the photo-sensing area.

Abstract translation: 固态图像传感器设置有用作光感测区域的电荷存储区域的第一第一导电型半导体区域和用于放大光电转换区域的电荷收集区域的次级第一导电型半导体区域， 传感区域。

公开(公告)号：US06312969B1

公开(公告)日：2001-11-06

申请号：US09712393

申请日：2000-11-14

Applicant: Hideshi Abe

Inventor： Hideshi Abe

IPC: H01L2100

CPC classification number: H01L27/14627 ,  H01L27/14601 ,  H01L27/14818

Abstract: A solid-state imaging sensor, a method for manufacturing the solid-state imaging sensor and an imaging device of which said solid state image sensor is designed to reduce unwanted light reflections, improve light focusing of light reflections from the substrate and oblique light constituents onto the sensor in order to allow further reduction in pixel size. Transfer electrodes in a line shape are arrayed at spaced intervals on a substrate, discrete sensors for photo-electric conversion are formed between the transfer electrode lines, a light-impervious film consisting of a first and second light-impervious films with an aperture positioned directly above a sensor is formed on the substrate and covers the transfer electrode to block any incident light other than the beam of light R from entering the sensor, and an on-chip lens for focusing the light R onto a sensor is formed above the light-impervious film. The light-impervious film has a lower overhang formed on the bottom edge of the side surface of the first light-impervious film, an upper overhang formed on the top edge of the side surface of the second light-impervious film, and the focus point P of the on-chip lens designed to be at a position with a height equal to the tip of the upper overhang directly above the sensor.

Abstract translation: 固态成像传感器，固态成像传感器的制造方法和成像装置，其中所述固态图像传感器被设计为减少不需要的光反射，从而将来自基板和倾斜光成分的光反射的聚光改善到 传感器，以便进一步缩小像素尺寸。 线形的转移电极以间隔的间隔排列在基板上，用于光电转换的离散传感器形成在转印电极线之间，不透光膜由第一和第二不透光膜组成，孔直接定位 传感器上方形成有传感电极，覆盖转印电极，以阻挡光束R以外的入射光进入传感器，在发光体的上方形成用于将光R聚焦在传感器上的片上透镜， 不透水膜 不透光膜具有形成在第一不透光膜的侧表面的底部边缘上的下突出端，形成在第二不透光膜的侧表面的顶部边缘上的上悬垂部分和聚焦点 片上透镜的P设计成位于高度等于传感器正上方的上悬垂顶端的位置。

公开(公告)号：US06278154B1

公开(公告)日：2001-08-21

申请号：US08965980

申请日：1997-11-07

Applicant: Hideshi Abe

Inventor： Hideshi Abe

IPC: H01L29788

CPC classification number: H01L27/14609 ,  H01L21/28123 ,  H01L27/1463 ,  H01L27/14683

Abstract: An object of the present invention is to provide a semiconductor apparatus and a method of manufacturing the same, in which dispersion of a threshold voltage Vth of a transistor at every transistor is reduced to remove generation of fixed charges in a gate insulation film and a surface level to stabilize the operation of the semiconductor apparatus. A semiconductor apparatus having a MIS transistor (1), wherein a gate electrode (4) of said MIS transistor (1), which mainly contributes to the operation of a circuit, is continuously formed to a position above a bypass film (8) made of an insulation film through which a leak current is able to easily flow as compared with a gate insulation film (7) of said MIS transistor (1) under the same voltage.

Abstract translation: 本发明的目的是提供一种半导体装置及其制造方法，其中减少了每个晶体管的晶体管的阈值电压Vth的偏差，以消除栅极绝缘膜和表面中的固定电荷的产生 以稳定半导体装置的运行。 一种具有MIS晶体管（1）的半导体装置，其中主要有助于电路操作的所述MIS晶体管（1）的栅极（4）连续地形成在旁路膜（8）上方的位置 的绝缘膜，与相同电压下的所述MIS晶体管（1）的栅极绝缘膜（7）相比，泄漏电流能够容易地流动。