公开(公告)号：US07332815B2

公开(公告)日：2008-02-19

申请号：US11005963

申请日：2004-12-07

申请人： Yutaka Shionoiri ,  Tomoaki Atsumi ,  Kiyoshi Kato

发明人： Yutaka Shionoiri ,  Tomoaki Atsumi ,  Kiyoshi Kato

IPC分类号： G03C1/85

CPC分类号： H01L27/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention has an object to provide a semiconductor device, an ID tag, in which delay of signal transmission with conductive layers is controlled. In addition, the other object is that a design method of such a semiconductor device is provided.A semiconductor device of the invention comprises a plurality of conductive layers, a plurality of first element groups each of which selects one among the conductive layers and a plurality of second element groups each of which amplifies a signal each transmitted from the conductive layers. Each of the second element groups is disposed between the first element groups. Stated another way, the first element group and the second element group are disposed alternately. The delay of the signal transmission with the plurality of conductive layers is controlled because a load by a parasitic capacitance is reduced due to the above feature.

摘要翻译： 本发明的目的是提供一种其中控制有导电层的信号​​传输延迟的半导体器件，ID标签。 此外，另一个目的是提供这种半导体器件的设计方法。 本发明的半导体器件包括多个导电层，多个第一元件组，每个第一元件组中的每一个选择导电层中的一个，以及多个第二元件组，每个第二元件组放大每个从导电层传输的信号。 每个第二元件组设置在第一元件组之间。 换句话说，第一元件组和第二元件组交替布置。 由于上述特征，由于寄生电容的负载减小，因此控制与多个导电层的信号​​传输的延迟。

公开(公告)号：US20070064511A1

公开(公告)日：2007-03-22

申请号：US11554128

申请日：2006-10-30

申请人： Yutaka Shionoiri ,  Tomoaki Atsumi ,  Kiyoshi Kato

发明人： Yutaka Shionoiri ,  Tomoaki Atsumi ,  Kiyoshi Kato

IPC分类号： G11C7/00

CPC分类号： G11C7/12 ,  G11C7/22

摘要： It is an object of the present invention to provide a semiconductor device in which reading and writing of data can be accurately performed by preventing malfunction even when a selection of address delays. A semiconductor device of the invention has three factors of a data holding unit, a precharge unit and a delay unit. The data holding unit comprises a plurality of memory cells. The precharge unit comprises a precharge potential line, a precharge signal line and a plurality of switches. The delay unit comprises a plurality of transistors. In addition, it has one or both of an address selecting unit having a column-decoder and a row-decoder and a display unit having a plurality of pixels, as well as the three factors.

摘要翻译： 本发明的目的是提供一种半导体器件，其中即使当选择地址延迟时，也可以通过防止故障来精确地执行数据的读取和写入。 本发明的半导体器件具有数据保持单元，预充电单元和延迟单元的三个因素。 数据保持单元包括多个存储单元。 预充电单元包括预充电电位线，预充电信号线和多个开关。 延迟单元包括多个晶体管。 此外，它具有地址选择单元，其具有列解码器和行解码器以及具有多个像素的显示单元以及三个因素中的一个或两个。

公开(公告)号：US06930326B2

公开(公告)日：2005-08-16

申请号：US10395202

申请日：2003-03-25

申请人： Kiyoshi Kato ,  Tomoaki Atsumi ,  Atsuo Isobe

发明人： Kiyoshi Kato ,  Tomoaki Atsumi ,  Atsuo Isobe

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconductor devices is small can be provided, and a semiconductor integrated circuit having high conformance can be provided. The invention is characterized in that, in a part or whole of thin film transistors which configure an analog circuit such as a current mirror circuit, a differential amplifier circuit, or an operational amplifier, in which high conformance is required for semiconductor devices included therein, channel forming regions have crystalline semiconductor films on the same line. High conformance can be expected for an analog circuit which has the crystalline semiconductor films on the same line formed using the invention as the channel forming regions of the thin film transistors. That is, the invention is characterized in that, among the thin film transistors which configures the analog circuit, the channel forming regions of the thin film transistors having at least the same polarity are formed on the same line.

摘要翻译： 根据本发明，需要具有一致性的多个半导体器件由同一直线上具有均匀结晶度的晶体半导体膜形成，并且可以提供其中半导体器件之间的变化小的半导体电路，以及半导体集成 可以提供具有高一致性的电路。 本发明的特征在于，在其中包括其中的半导体器件需要高一致性的诸如电流镜电路，差分放大器电路或运算放大器的模拟电路的一部分或全部中， 通道形成区域在同一行上具有结晶半导体膜。 对于具有使用本发明形成的同一线上的晶体半导体膜作为薄膜晶体管的沟道形成区域的模拟电路，可以期待高度一致性。 也就是说，本发明的特征在于，在构成模拟电路的薄膜晶体管中，在同一线上形成具有至少相同极性的薄膜晶体管的沟道形成区域。

公开(公告)号：US20050029518A1

公开(公告)日：2005-02-10

申请号：US10934997

申请日：2004-09-07

申请人： Kiyoshi Kato ,  Tomoaki Atsumi ,  Atsuo Isobe

发明人： Kiyoshi Kato ,  Tomoaki Atsumi ,  Atsuo Isobe

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L29/76

CPC分类号： H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconductor devices is small can be provided, and a semiconductor integrated circuit having high conformance can be provided. The invention is characterized in that, in a part or whole of thin film transistors which configure an analog circuit such as a current mirror circuit, a differential amplifier circuit, or an operational amplifier, in which high conformance is required for semiconductor devices included therein, channel forming regions have crystalline semiconductor films on the same line. High conformance can be expected for an analog circuit which has the crystalline semiconductor films on the same line formed using the invention as the channel forming regions of the thin film transistors. That is, the invention is characterized in that, among the thin film transistors which configures the analog circuit, the channel forming regions of the thin film transistors having at least the same polarity are formed on the same line.

公开(公告)号：US08854191B2

公开(公告)日：2014-10-07

申请号：US11716042

申请日：2007-03-09

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

IPC分类号： H04Q5/22 ,  G06K19/07

CPC分类号： G06K19/0723 ,  G06K19/0701 ,  G06K19/0702

摘要： To provide a semiconductor device including an RFID which can transmit and receive individual information without checking of the remaining charge of a battery or a replacing operation of the battery in accordance with deterioration over time of the battery for driving, and can maintain an excellent state for transmission and reception of individual information even when power of a radio wave or an electromagnetic wave from outside is insufficient. A battery (also described as a secondary battery) is provided as a power supply for supplying power to the RFID. Then, when power which is obtained from a signal received from outside is larger than predetermined power, its surplus power is stored in the battery; and when the power which is obtained from the signal received from outside is smaller than the predetermined power, power which is obtained from the battery is used for the power for driving.

摘要翻译： 为了提供一种包括RFID的半导体器件，其可以根据用于驱动的​​电池的劣化随时检测电池的剩余电量或电池的替换操作而发送和接收各个信息，并且可以保持优异的状态 即使在来自外部的无线电波或电磁波的功率不足的情况下，也可以发送和接收个别信息。 提供电池（也称为二次电池）作为向RFID提供电力的电源。 然后，当从外部接收的信号获得的功率大于预定功率时，其剩余功率被存储在电池中; 并且当从外部接收的信号获得的功率小于预定功率时，从电池获得的功率用于驱动电力。

公开(公告)号：US20130069132A1

公开(公告)日：2013-03-21

申请号：US13606472

申请日：2012-09-07

申请人： Tomoaki Atsumi ,  Takashi Okuda

发明人： Tomoaki Atsumi ,  Takashi Okuda

IPC分类号： H01L27/108 ,  H01L23/485

CPC分类号： H01L27/112 ,  H01L21/76801 ,  H01L21/76826 ,  H01L27/0688 ,  H01L27/10805 ,  H01L27/1085 ,  H01L27/10873 ,  H01L27/10897 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/16 ,  H01L29/78 ,  H01L29/7869

摘要： Probability of malfunction of a semiconductor storage device is reduced. A shielding layer is provided between a memory cell array (e.g., a memory cell array including a transistor formed using an oxide semiconductor material) and a peripheral circuit (e.g., a peripheral circuit including a transistor formed using a semiconductor substrate), which are stacked. With this structure, the memory cell array and the peripheral circuit can be shielded from radiation noise generated between the memory cell array and the peripheral circuit. Thus, probability of malfunction of the semiconductor storage device can be reduced.

摘要翻译： 减少了半导体存储装置故障的概率。 屏蔽层设置在堆叠的存储单元阵列（例如，包括使用氧化物半导体材料形成的晶体管的存储单元阵列）和周边电路（例如，包括使用半导体衬底形成的晶体管的外围电路）之间 。 利用这种结构，存储单元阵列和外围电路可以屏蔽在存储单元阵列和外围电路之间产生的辐射噪声。 因此，可以降低半导体存储装置的故障概率。

公开(公告)号：US08232880B2

公开(公告)日：2012-07-31

申请号：US11716018

申请日：2007-03-09

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

IPC分类号： G08B13/14

CPC分类号： H01Q1/2225 ,  G06K19/0701 ,  G06K19/0702 ,  G06K19/0723 ,  G06K19/07767

摘要： The present invention provides a battery as a power supply for supplying power in the RFID, and another antenna for charging the battery, in addition to an antenna which transmits and receives individual information to and from outside as a means for supplying power to the battery.

摘要翻译： 本发明提供一种作为用于在RFID中供电的电源的电池，以及用于对电池充电的另一个天线，以及向外部发送和接收个人信息的天线作为向电池供电的装置。

公开(公告)号：US20100163631A1

公开(公告)日：2010-07-01

申请号：US12645082

申请日：2009-12-22

申请人： Masato Ishii ,  Tomoaki Atsumi

发明人： Masato Ishii ,  Tomoaki Atsumi

IPC分类号： G06K19/07 ,  G06K7/01

CPC分类号： G06K19/0723 ,  G06K19/0701 ,  H01L28/10

摘要： A semiconductor device capable of wireless communication which has low power consumption in a step for decoding an encoded signal to obtain data is provided. The semiconductor device includes an antenna configured to convert received carrier waves into an AC signal, a rectifier circuit configured to rectify the AC signal into a DC voltage, a demodulation circuit configured to demodulate the AC signal into an encoded signal, an oscillator circuit configured to generate a clock signal having a certain frequency by supply of the DC voltage, a synchronizing circuit configured to generate a synchronized encoded signal by synchronizing the encoded signal obtained by demodulating the AC signal with the clock signal, a decoder circuit configured to decode the synchronized encoded signal into a decoded signal, and a register configured to store the decoded signal as a clock (referred to as a digital signal).

摘要翻译： 提供了一种能够在用于解码编码信号以获得数据的步骤中具有低功耗的无线通信的半导体器件。 该半导体装置包括将接收的载波转换为交流信号的天线，被配置为将交流信号整流为直流电压的整流电路，被配置为将该交流信号解调为编码信号的解调电路， 通过提供DC电压产生具有一定频率的时钟信号;同步电路，被配置为通过将通过解调AC信号获得的编码信号与时钟信号同步来生成同步编码信号;解码器电路，被配置为对同步编码的 信号转换为解码信号，以及配置为将解码信号存储为时钟（称为数字信号）的寄存器。

公开(公告)号：US07518592B2

公开(公告)日：2009-04-14

申请号：US11622510

申请日：2007-01-12

申请人： Jun Koyama ,  Tomoaki Atsumi ,  Hiroyuki Miyake

发明人： Jun Koyama ,  Tomoaki Atsumi ,  Hiroyuki Miyake

IPC分类号： G09G3/36

CPC分类号： G09G3/3648 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0809 ,  G09G2300/0828 ,  G09G2300/0842 ,  G09G2300/0857

摘要： A liquid crystal display device with low power consumption is provided. In the liquid crystal display device having a source signal line driver circuit, a gate signal line driver circuit, a DAC controller, and a pixel portion and performing an image display using an n-bit (n is a natural number, n≧2) digital image signal, one pixel has memory circuits for storing an n-bit digital image signal and a D/A converter, and the n-bit digital image signal for one frame can be stored in the pixel. In case of a static image display, the image signal stored in the memory circuits is read out every frame to perform the display, and thus, only a DAC controller is driven during the display. Therefore, this contributes to a reduction of the power consumption of the entire liquid crystal display device.

公开(公告)号：US08536581B2

公开(公告)日：2013-09-17

申请号：US13426650

申请日：2012-03-22

申请人： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

发明人： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

IPC分类号： H01L33/00

CPC分类号： H01L29/04 ,  G02F1/13454 ,  G02F1/136204 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124

摘要： In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.