公开(公告)号：US08866271B2

公开(公告)日：2014-10-21

申请号：US13250708

申请日：2011-09-30

申请人： Katsuhiko Yamamoto ,  Yuji Takebayashi ,  Tatsuyuki Saito ,  Masahisa Okuno

发明人： Katsuhiko Yamamoto ,  Yuji Takebayashi ,  Tatsuyuki Saito ,  Masahisa Okuno

IPC分类号： H01L21/26 ,  H01L29/02 ,  H01L21/02 ,  H01L21/67 ,  C23C16/56 ,  C23C16/40 ,  H01L49/02

CPC分类号： H01L21/67115 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02345 ,  H01L28/40

摘要： A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.

摘要翻译： 一种半导体器件制造方法，包括将形成有高k膜的衬底加载到处理室中，通过在衬底上照射微波加热高k膜并进行重整处理，并将衬底从 处理室。

公开(公告)号：US20090137128A1

公开(公告)日：2009-05-28

申请号：US11887350

申请日：2006-04-27

申请人： Kenmei Ko ,  Rui Harada ,  Kazuyuki Toyada ,  Yuji Takebayashi ,  Takashi Koshimizu ,  Takeshi Itoh

发明人： Kenmei Ko ,  Rui Harada ,  Kazuyuki Toyada ,  Yuji Takebayashi ,  Takashi Koshimizu ,  Takeshi Itoh

IPC分类号： H01L21/30 ,  H01L21/3065 ,  H01L21/306

CPC分类号： H01J37/32532 ,  H01J37/32009 ,  H01L21/67069

摘要： Disclosed is a substrate processing apparatus including: a reaction tube to accommodate at least one substrate; at least a pair of electrodes disposed outside the reaction tube; and a dielectric member, wherein a plasma generation region is formed at least in a space between an inner wall of the reaction tube and an outer circumferential edge of the substrate, the member includes a main face extending in a radial direction of the substrate and in a substantially entire circumferential direction of the substrate in a horizontal plane parallel to a main face of the substrate, and is disposed in an outer circumferential region of the substrate, and gas activated in the plasma generation region is supplied through a surface region of the main face of the member to the substrate.

摘要翻译： 公开了一种基板处理装置，包括：反应管，用于容纳至少一个基板; 至少一对设置在反应管外的电极; 以及电介质部件，其中至少在所述反应管的内壁和所述基板的外周边缘之间的空间中形成等离子体产生区域，所述部件包括沿所述基板的径向延伸的主面， 在与基板的主面平行的水平面上的基板的大致整个圆周方向，并且设置在基板的外周区域中，并且在等离子体产生区域中活化的气体通过主体的表面区域被供给 成员面向基板。

公开(公告)号：US5957651A

公开(公告)日：1999-09-28

申请号：US776653

申请日：1997-07-21

申请人： Yuji Takebayashi ,  Tokunobu Akao ,  Yoshikazu Konno

发明人： Yuji Takebayashi ,  Tokunobu Akao ,  Yoshikazu Konno

IPC分类号： B65G49/07 ,  H01L21/677 ,  H01L21/68 ,  H01L21/687

CPC分类号： H01L21/67748 ,  H01L21/68 ,  H01L21/687 ,  H01L21/68707 ,  Y10S414/136 ,  Y10S414/14 ,  Y10S414/141

摘要： A rotary shaft is supported by a frame so as to be rotatable and movable vertically relative to the frame. A carrying arm is pivoted to the rotary shaft and a substrate receiver is attached to an end of the carrying arm and receives a substrate. A guide base is mounted on the rotary shaft on the lower side of the substrate receiver in such a manner that the guide base is approximately parallel to the substrate receiver, and a substrate alignment mechanism is attached to the rotary shaft via the guide base. The substrate alignment mechanism includes a pair of location correcting members which are coupled to air cylinders. The location correcting members are displaced by air cylinders to correct the location of substrate.

摘要翻译： PCT No.PCT / JP96 / 01531 Sec。 371日期1997年7月21日 102（e）1997年7月21日PCT PCT 1996年6月6日PCT公布。 WO96 / 42108 PCT公开号 日期1996年12月27日旋转轴由框架支撑，以便相对于框架可旋转并且可垂直移动。 承载臂枢转到旋转轴，并且衬底接收器附接到承载臂的端部并且接收衬底。 引导基座以这样的方式安装在基板接收器的下侧的旋转轴上，使得引导基座大致平行于基板接收器，并且基板对准机构经由引导基座附接到旋转轴。 基板对准机构包括耦合到气缸的一对位置校正构件。 位置校正构件被气缸移位以校正衬底的位置。

公开(公告)号：US09496134B2

公开(公告)日：2016-11-15

申请号：US13289450

申请日：2011-11-04

申请人： Shinya Sasaki ,  Yuji Takebayashi ,  Shintaro Kogura

发明人： Shinya Sasaki ,  Yuji Takebayashi ,  Shintaro Kogura

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/02178

摘要： Provided is a substrate processing apparatus capable of suppressing accumulation of reaction products or decomposed matters on an inner wall of a nozzle and suppressing scattering of foreign substances in a process chamber. The substrate processing apparatus includes a process chamber, a heating unit, a source gas supply unit, a source gas nozzle, an exhaust unit, and a control unit configured to control at least the heating unit, the source gas supply unit and the exhaust unit. The source gas nozzle is disposed at a region in the process chamber, in which a first process gas is not decomposed even under a temperature in the process chamber higher than a pyrolysis temperature of the first process gas, and the control unit supplies the first process gas into the process chamber two or more times at different flow velocities to prevent the first process gas from being mixed.

摘要翻译： 提供一种能够抑制反应产物或分解物积聚在喷嘴的内壁上并抑制处理室内的异物散射的基板处理装置。 基板处理装置包括处理室，加热单元，源气体供给单元，源气体喷嘴，排气单元以及至少控制加热单元，源气体供给单元和排气单元的控制单元 。 源气体喷嘴设置在处理室中的区域中，即使处理室中的温度高于第一处理气体的热分解温度，第一处理气体也不分解，并且控制单元提供第一处理 气体以不同的流动速度进入处理室两次或更多次以防止第一工艺气体混合。

公开(公告)号：US08343277B2

公开(公告)日：2013-01-01

申请号：US12710549

申请日：2010-02-23

申请人： Yuji Takebayashi ,  Satoshi Okada ,  Takashi Nakagawa

发明人： Yuji Takebayashi ,  Satoshi Okada ,  Takashi Nakagawa

IPC分类号： C23C16/455 ,  C23C16/46 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01L21/67109 ,  C23C16/4402 ,  C23C16/4557 ,  C23C16/45578

摘要： To inhibit a diffusion of particles into a processing chamber and reduce a cost required for exchanging a gas filter. A substrate processing apparatus comprises: a processing chamber processing substrates; a gas supply part supplying processing gas into the processing chamber; wherein the gas supply part has a gas supply nozzle disposed in the processing chamber; a filter removing impurities contained in the processing gas; and a gas supply port opened in the gas supply nozzle, for supplying into the processing chamber the processing gas from which impurities are removed by the filter.

摘要翻译： 抑制颗粒扩散到处理室中并降低更换气体过滤器所需的成本。 一种基板处理装置，包括：处理基板; 将处理气体供给到处理室内的气体供给部; 其中所述气体供应部分具有设置在所述处理室中的气体供给喷嘴; 过滤器，其去除处理气体中所含的杂质; 以及在所述气体供给喷嘴中开口的供气口，用于向所述处理室供给由所述过滤器除去了杂质的处理气体。

公开(公告)号：US20120119337A1

公开(公告)日：2012-05-17

申请号：US13289450

申请日：2011-11-04

申请人： Shinya Sasaki ,  Yuji Takebayashi ,  Shintaro Kogura

发明人： Shinya Sasaki ,  Yuji Takebayashi ,  Shintaro Kogura

IPC分类号： H01L23/58 ,  H01L21/31 ,  C23C16/52

CPC分类号： H01L21/0228 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/02178

摘要： Provided is a substrate processing apparatus capable of suppressing accumulation of reaction products or decomposed matters on an inner wall of a nozzle and suppressing scattering of foreign substances in a process chamber. The substrate processing apparatus includes a process chamber, a heating unit, a source gas supply unit, a source gas nozzle, an exhaust unit, and a control unit configured to control at least the heating unit, the source gas supply unit and the exhaust unit. The source gas nozzle is disposed at a region in the process chamber, in which a first process gas is not decomposed even under a temperature in the process chamber higher than a pyrolysis temperature of the first process gas, and the control unit supplies the first process gas into the process chamber two or more times at different flow velocities to prevent the first process gas from being mixed.

摘要翻译： 提供一种能够抑制反应产物或分解物积聚在喷嘴的内壁上并抑制处理室内的异物散射的基板处理装置。 基板处理装置包括处理室，加热单元，源气体供给单元，源气体喷嘴，排气单元以及至少控制加热单元，源气体供给单元和排气单元的控制单元 。 源气体喷嘴设置在处理室中的区域中，即使处理室中的温度高于第一处理气体的热解温度，第一处理气体也不分解，并且控制单元提供第一处理 气体以不同的流动速度进入处理室两次或更多次以防止第一工艺气体混合。

公开(公告)号：US20120086107A1

公开(公告)日：2012-04-12

申请号：US13250708

申请日：2011-09-30

申请人： Katsuhiko Yamamoto ,  Yuji Takebayashi ,  Tatsuyuki Saito ,  Masahisa Okuno

发明人： Katsuhiko Yamamoto ,  Yuji Takebayashi ,  Tatsuyuki Saito ,  Masahisa Okuno

IPC分类号： H01L29/02 ,  H01L21/26 ,  C23C16/511

CPC分类号： H01L21/67115 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02345 ,  H01L28/40

摘要： A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.

摘要翻译： 一种半导体器件制造方法，包括将形成有高k膜的衬底加载到处理室中，通过在衬底上照射微波加热高k膜并进行重整处理，并将衬底从 处理室。

公开(公告)号：US20100083898A1

公开(公告)日：2010-04-08

申请号：US12458816

申请日：2009-07-23

申请人： Shintaro Kogura ,  Yuji Takebayashi ,  Atsuhiko Ashitani ,  Satoshi Okada

发明人： Shintaro Kogura ,  Yuji Takebayashi ,  Atsuhiko Ashitani ,  Satoshi Okada

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： C23C16/45578 ,  C23C16/405 ,  C23C16/45546 ,  H01L21/3141 ,  H01L21/31641 ,  H01L21/67109

摘要： There are provided an inner tube in which a substrate is stored; an outer tube surrounding the inner tube; a gas nozzle disposed in the inner tube; a gas ejection hole opened on the gas nozzle; a gas supply unit supplying gas into the inner tube through the gas nozzle; a gas exhausts hole opened on the side wall of the inner tube; and an exhaust unit exhausting a space between the outer tube and the inner tube and generating a gas flow in the inner tube toward the gas exhaust hole from the gas ejection hole, wherein the side wall of the inner tube is constituted, so that a distance between an outer edge of the substrate and the gas exhaust hole is set to be longer than a distance between the outer edge of the substrate and the gas ejection hole.

摘要翻译： 设置有存储基板的内管; 围绕内管的外管; 设置在内管中的气体喷嘴; 在气体喷嘴上开口的气体喷射孔; 气体供给单元，其通过所述气体喷嘴向所述内管供给气体; 在内管的侧壁上开口的排气孔; 以及排气单元，其排出所述外管和所述内管之间的空间，并且从所述气体喷射孔向所述内管朝向所述排气孔产生气流，其中，所述内管的侧壁被构成， 基板的外缘与排气孔之间的距离设定为比基板的外缘和气体喷出孔的距离长。

公开(公告)号：US20090255630A1

公开(公告)日：2009-10-15

申请号：US11919348

申请日：2006-04-26

申请人： Kazuyuki Toyoda ,  Shinji Yashima ,  Yuji Takebayashi ,  Takeshi Itoh

发明人： Kazuyuki Toyoda ,  Shinji Yashima ,  Yuji Takebayashi ,  Takeshi Itoh

IPC分类号： H01L21/465

CPC分类号： H01J37/32532 ,  H01J37/32009 ,  H05H1/2406 ,  H05H2001/2418

摘要： Disclosed is a substrate processing apparatus, including: a reaction chamber to process a substrate; a substrate placing member to stack a plurality of substrates thereon in multi-layers at a predetermined distance from one another in the reaction chamber; an introducing section to introduce processing gas into the reaction chamber; an exhaust section to exhaust an inside of the reaction chamber; and a plurality of pairs of comb electrodes, to which alternating current electric power is to be applied, to generate plasma, the plurality of pairs of comb electrodes being disposed in the reaction chamber, wherein each pair of the plurality of pairs of comb electrodes are disposed at a predetermined distance from each of plasma processing faces of the plurality of the substrates to be placed on the substrate placing member.

摘要翻译： 公开了一种基板处理装置，包括：处理基板的反应室; 基板放置部件，用于在反应室中彼此以预定的距离以多层堆叠多个基板; 将处理气体引入反应室的导入部; 用于排出反应室内部的排气部分; 以及多个梳状电极对，其中施加有交流电力以产生等离子体，所述多对梳形电极对设置在所述反应室中，其中，所述多对梳形电极对中的每一对 设置在要放置在基板放置部件上的多个基板的各等离子体处理面的预定距离处。

公开(公告)号：US07820686B2

公开(公告)日：2010-10-26

申请号：US12296671

申请日：2007-04-12

申请人： Yuji Takebayashi

发明人： Yuji Takebayashi

IPC分类号： A61K31/506

CPC分类号： C07D403/06 ,  A61K31/506

摘要： The invention is directed to a method of treating an inflammatory bowel disease such as ulcerative colitis or Crohn's disease, which comprises administering an effective amount of the therapeutic agent 5-chloro-6-(2-iminopyrrolidin-1-yl)methyl-2,4(1H,3H)-pyrimidinedione, or a pharmaceutically acceptable salt thereof, to a patient with inflammatory bowel disease.

摘要翻译： 本发明涉及一种治疗诸如溃疡性结肠炎或克罗恩病的炎性肠病的方法，其包括给予有效量的治疗剂5-氯-6-（2-亚氨基吡咯烷-1-基）甲基-2， 4（1H，3H） - 嘧啶二酮或其药学上可接受的盐给予炎症性肠病患者。