公开(公告)号：US06284628B1

公开(公告)日：2001-09-04

申请号：US09295089

申请日：1999-04-20

申请人： Susumu Kuwahara ,  Kiyoshi Mitani ,  Hiroji Aga ,  Masae Wada

发明人： Susumu Kuwahara ,  Kiyoshi Mitani ,  Hiroji Aga ,  Masae Wada

IPC分类号： H01L2130

CPC分类号： H01L21/02032 ,  H01L21/2007 ,  H01L21/76254 ,  Y10S438/959 ,  Y10S438/977

摘要： There is disclosed a method of recycling a delaminated wafer produced as a by-product in producing an SOI wafer according to a hydrogen ion delaminating method by reprocessing it for reuse as a silicon wafer, wherein at least polishing of the delaminated wafer for removing of a step in the peripheral part of the delaminated wafer and heat treatment in a reducing atmosphere containing hydrogen are conducted as the reprocessing. There are provided a method of appropriately reprocessing a delaminated wafer produced as a by-product in a hydrogen ion delaminating method to reuse it as a silicon wafer actually, and particularly, a method of reprocessing an expensive wafer such as an epitaxial wafer many times for reuse, to improve productivity of SOI wafer having a high quality SOI layer, and to reduce producing cost.

公开(公告)号：US6140210A

公开(公告)日：2000-10-31

申请号：US159856

申请日：1998-09-24

申请人： Hiroji Aga ,  Kiyoshi Mitani ,  Yukio Inazuki

发明人： Hiroji Aga ,  Kiyoshi Mitani ,  Yukio Inazuki

IPC分类号： H01L21/265 ,  H01L21/02 ,  H01L21/762 ,  H01L27/12 ,  H01L21/30

CPC分类号： H01L21/76251 ,  H01L21/76254

摘要： In a method of fabricating an SOI wafer, an oxide film is formed on the surface of at least one of two silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form a fine bubble layer (enclosed layer) within the wafer; the ion-implanted silicon wafer is superposed on the other silicon wafer such that the ion-implanted surface comes into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed in order to delaminate a portion of the ion-implanted wafer while the fine bubble layer is used as a delaminating plane, in order to form a thin film to thereby obtain an SOI wafer. In the method, a defect layer at the delaminated surface of the thus-obtained SOI wafer is removed to a depth of 200 nm or more through vapor-phase etching, and then mirror polishing is performed. Therefore, the obtained SOI wafer has an extremely low level of defects and a high thickness uniformity.

摘要翻译： 在制造SOI晶片的方法中，在两个硅晶片中的至少一个的表面上形成氧化物膜; 将氢离子或稀有气体离子注入到两个硅晶片之一的上表面中，以便在晶片内形成微小的气泡层（封闭层）; 离子注入硅晶片叠置在另一个硅晶片上，使得离子注入表面通过氧化膜与另一硅晶片的表面紧密接触; 为了形成薄膜以获得SOI晶片，进行热处理，以便在使用微细气泡层作为分层平面的情况下使离子注入的晶片的一部分分层。 在该方法中，通过气相蚀刻将由此获得的SOI晶片的分层表面的缺陷层去除至200nm以上的深度，然后进行镜面抛光。 因此，所获得的SOI晶片具有极低的缺陷水平和高的厚度均匀性。

公开(公告)号：US08728912B2

公开(公告)日：2014-05-20

申请号：US13990883

申请日：2011-11-18

申请人： Hiroji Aga ,  Isao Yokokawa ,  Satoshi Oka

发明人： Hiroji Aga ,  Isao Yokokawa ,  Satoshi Oka

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/31111 ,  H01L21/76254

摘要： The present invention is directed to a method for manufacturing an SOI wafer, the method by which treatment that removes the outer periphery of a buried oxide film to obtain a structure in which a peripheral end of an SOI layer of an SOI wafer is located outside a peripheral end of the buried oxide film, and, after heat treatment is performed on the SOI wafer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, an epitaxial layer is formed on a surface of the SOI layer. As a result, there is provided a method that can manufacture an SOI wafer having a desired SOI layer thickness by performing epitaxial growth without allowing a valley-shaped step to be generated in an SOI wafer with no silicon oxide film in a terrace portion, the SOI wafer fabricated by an ion implantation delamination method.

摘要翻译： 本发明涉及一种SOI晶片的制造方法，其中，除去掩埋氧化膜的外周，得到SOI晶片的SOI层的外周位于外侧的结构的方法 并且在包含氢或含有氯化氢气体的气氛的还原气氛中对SOI晶片进行热处理后，在SOI层的表面上形成外延层。 结果，提供了一种方法，其可以通过进行外延生长来制造具有期望的SOI层厚度的SOI晶片，而不会在在台面部分中没有氧化硅膜的SOI晶片中产生谷状步骤， 通过离子注入分层方法制造的SOI晶片。

公开(公告)号：US20120244679A1

公开(公告)日：2012-09-27

申请号：US13514414

申请日：2010-11-18

申请人： Satoshi Oka ,  Hiroji Aga ,  Masahiro Kato ,  Nobuhiko Noto

发明人： Satoshi Oka ,  Hiroji Aga ,  Masahiro Kato ,  Nobuhiko Noto

IPC分类号： H01L21/20

CPC分类号： H01L21/3247 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/76254

摘要： The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.

摘要翻译： 本发明涉及一种接合晶片的制造方法，其特征在于，在含有氢或氯化氢的气氛中，对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理， 其中预先在其上放置接合晶片的基座的表面，在平坦化热处理时使用的基座被涂覆有硅膜。 结果，提供了一种接合晶片的制造方法，即使在将粘合晶片的薄膜的表面平坦化的热处理后，也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法 在离子注入分层方法中进行分层。

公开(公告)号：US20110281420A1

公开(公告)日：2011-11-17

申请号：US13145275

申请日：2010-01-08

申请人： Hiroji Aga ,  Isao Yokokawa ,  Nobuhiko Noto

发明人： Hiroji Aga ,  Isao Yokokawa ,  Nobuhiko Noto

IPC分类号： H01L21/301

CPC分类号： H01L21/76254 ,  H01L21/30608 ,  H01L21/31111

摘要： A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer.

摘要翻译： 一种用于制造SOI晶片的方法，包括从其表面将气体离子注入接合晶片以形成离子注入层; 通过绝缘膜将接合晶片的离子注入表面接合到基底晶片的表面; 并在离子注入层分层接合晶片以制造SOI晶片。 该方法还包括在接合晶片在离子注入层分层之前将接合的晶片浸入能够溶解绝缘体膜的液体中或将接合的晶片暴露于能够溶解绝缘膜的气体，使得绝缘膜 位于接合晶片和基底晶片之间的位置从外圆周边缘朝向接合晶片的中心蚀刻。

公开(公告)号：US20110104870A1

公开(公告)日：2011-05-05

申请号：US12866271

申请日：2009-02-17

申请人： Norihiro Kobayashi ,  Tohru Ishizuka ,  Hiroji Aga ,  Nobuhiko Noto

发明人： Norihiro Kobayashi ,  Tohru Ishizuka ,  Hiroji Aga ,  Nobuhiko Noto

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film.

摘要翻译： 一种用于制造接合晶片的方法，包括至少从接合晶片的表面注入选自氢离子和稀有气体离子的至少一种气体离子，以在晶片中形成离子注入层，将离子 将接合晶片的植入表面直接或通过绝缘体膜的基底晶片的表面，然后在离子注入层分层接合晶片以制造接合晶片。 将等离子体处理施加到接合晶片和基底晶片之一的接合表面以生长氧化膜，进行蚀刻生长的氧化物膜，并且进行与另一晶片的接合。 该方法通过在直接或通过绝缘膜进行接合的同时还原接合表面上的颗粒并进行强结合来防止缺陷。

公开(公告)号：US07288418B2

公开(公告)日：2007-10-30

申请号：US11348502

申请日：2006-02-07

申请人： Thierry Barge ,  André Auberton-Herve ,  Hiroji Aga ,  Naoto Tate

发明人： Thierry Barge ,  André Auberton-Herve ,  Hiroji Aga ,  Naoto Tate

IPC分类号： H01L21/302

CPC分类号： H01L21/3247 ,  H01L21/306 ,  H01L21/30625 ,  H01L21/76251 ,  Y10S438/974

摘要： A process for treating substrates for the microelectronics or optoelectronics industry, wherein the substrates include on at least one of their faces a working layer in which components are intended to be formed. The process includes a step of annealing under a reductive atmosphere followed by a step of chemical-mechanical polishing on the free surface of the working layer.

摘要翻译： 一种用于处理微电子学或光电子工业的衬底的方法，其中衬底在其至少一个面上包括要在其中形成部件的工作层。 该方法包括在还原性气氛下进行退火，然后在工作层的自由表面上进行化学机械抛光的步骤。

公开(公告)号：US06380551B2

公开(公告)日：2002-04-30

申请号：US09299074

申请日：1999-04-26

申请人： Takao Abe ,  Hiroji Aga

发明人： Takao Abe ,  Hiroji Aga

IPC分类号： H01L2906

CPC分类号： G02B6/12 ,  B82Y20/00 ,  G02B6/1225

摘要： A stacked material free from a degraded quality of crystal, formed with a precise periodicity, and fabricated without relying on the vapor phase growth method is provided. An optical function device using the stacked material is also provided. A starting stacked material composed of two alternate layers (A), (B) having different refractive indexes is stacked over two periods or more by a substrate bonding method to provide a multi-periodic stacked structure.

摘要翻译： 提供了不依赖于气相生长方法制造的具有精确周期性形成的不具有劣化品质的晶体的堆叠材料。 还提供了使用堆叠材料的光学功能装置。 由具有不同折射率的两个交替层（A），（B）构成的起始层叠材料通过基板接合方法在两个周期以上层叠以提供多周期性堆叠结构。

公开(公告)号：US08962352B2

公开(公告)日：2015-02-24

申请号：US14240432

申请日：2012-08-21

申请人： Isao Yokokawa ,  Hiroji Aga ,  Yasushi Mizusawa

发明人： Isao Yokokawa ,  Hiroji Aga ,  Yasushi Mizusawa

IPC分类号： H01L21/66 ,  G01B11/30 ,  G01B21/20 ,  H01L21/762

CPC分类号： H01L22/12 ,  G01B11/306 ,  G01B21/20 ,  H01L21/76254 ,  H01L21/76256 ,  H01L22/20

摘要： A method for calculating a warpage of a bonded SOI wafer includes: assuming that the epitaxial growth SOI wafer is a silicon single crystal wafer having the same dopant concentration as dopant concentration of the bond wafer; calculating a warpage A that occurs at the time of performing the epitaxial growth relative to the assumed silicon single crystal wafer; calculating a warpage B caused due to a thickness of the BOX layer of the epitaxial growth SOI wafer; determining a measured value of a warpage of the base wafer before bonding as a warpage C; and calculating a sum of the warpages (A+B+C) as the warpage of the bonded SOI wafer.

摘要翻译： 用于计算接合SOI晶片的翘曲的方法包括：假设外延生长SOI晶片是具有与接合晶片的掺杂剂浓度相同的掺杂剂浓度的硅单晶晶片; 计算在相对于假定的硅单晶晶片进行外延生长时发生的翘曲A; 计算由外延生长SOI晶片的BOX层的厚度引起的翘曲B. 在接合之前确定基底晶片的翘曲的测量值作为翘曲C; 并计算翘曲（A + B + C）的和作为接合的SOI晶片的翘曲。

公开(公告)号：US20130102126A1

公开(公告)日：2013-04-25

申请号：US13699118

申请日：2011-04-21

申请人： Hiroji Aga ,  Satoshi Oka ,  Nobuhiko Noto

发明人： Hiroji Aga ,  Satoshi Oka ,  Nobuhiko Noto

IPC分类号： H01L21/265

CPC分类号： H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3247 ,  H01L21/76254

摘要： A method for manufacturing a bonded wafer including: forming an ion-implanted layer in a bond wafer, bonding the bond wafer to a base wafer, delaminating the bond wafer at the ion-implanted layer, and performing a flattening heat treatment on a surface after delamination, in which a silicon single crystal wafer is used as the bond wafer where the region to form the ion-implanted layer has a resistivity of 0.2 Ωcm or less, the ion-implanted layer is formed where the ion dose for forming the layer is 4×1016/cm2 or less, and the flattening heat treatment is performed in an atmosphere including HCl gas. Therefore, a method for manufacturing a bonded wafer having a low resistivity thin film (SOI layer) that contains dopant, such as boron, with high concentration according to the ion-implantation delamination method, where outward diffusion of dopant and suction due to oxidation can be inhibited to maintain low resistivity.

摘要翻译： 一种用于制造接合晶片的方法，包括：在接合晶片中形成离子注入层，将接合晶片接合到基底晶片，在离子注入层分层接合晶片，以及在表面之后进行平坦化热处理 分层，其中使用硅单晶晶片作为形成离子注入层的区域的电阻率为0.2Ω·米或更小的接合晶片，形成离子注入层，其中用于形成层的离子剂量为 4×10 16 / cm 2以下，扁平化热处理在含有HCl气体的气氛中进行。 因此，根据离子注入脱层法，具有含有高掺杂剂等硼等掺杂剂的低电阻薄膜（SOI层）的接合晶片的制造方法，其中掺杂剂的向外扩散和由于氧化引起的抽吸可以 被抑制以维持低电阻率。