摘要:
A method for manufacturing a dynamic quantity detection device includes bonding a semiconductor chip that includes a detection element for detecting a dynamic quantity to a stand using a bonding layer. Initially, a semiconductor chip is formed that includes a detection element used for correlating a dynamic quantity to be detected to an electric quantity and a processing circuit element used for a circuit that processes the electric quantity. Further, a bonding layer is placed on a stand. The semiconductor chip is then placed on the bonding layer and the semiconductor chip is bonded to the stand by sintering the bonding layer at 400° C. or lower in order to suppress a change in a characteristic of the processing circuit element.
摘要:
To allow an AP which performs operation based on a time of a system clock and another AP which performs operation based on a user-specified time to be executed concurrently in a data processing unit with only one system clock without having to change the time of the system clock, virtual system time setting means 5 receive a command or job start date and/or time from an input/output unit 2 and store it in a virtual system time storage area 4. In response to a system date acquisition function 6 or a system time acquisition function 7 from a command or a job, virtual system time converting means return either the date of the system clock when the date is not stored in the virtual system time storage area 4 or the date stored in the date storage area when the date is stored therein. The means also return either the time of the system clock when the time is not stored in the virtual system time storage area or the time of said system clock plus the time stored in said time storage area when the time is stored therein.
摘要:
An aluminum alloy containing Si: 1.5-12% (mass % here and hereinafter), Mg: 0.5-6% and, optionally, at least one of Mn: 0.5-2%, Cu: 0.15-3% and Cr: 0.04-0.35% and, further, containing Ti: 0.01-0.1% and the balance of Al and inevitable impurities, in which the average grain size of crystallized grains of Si system compounds is from 2 to 20 .mu.m and an area ratio thereof is from 2 to 12%. The alloy is melted to obtain a cast ingot having DAS (Dendrite Arm Spacing) of 10 to 50 .mu.m, which is then put to a soaking treatment at 450 to 520.degree. C. and then to extrusion molding. The aluminum alloy has excellent machinability with no addition of low melting metals.
摘要:
A plularity of sensor chips, each having strain gauges and a thin diaphragm, are formed on a semiconductor wafer having an upper layer and a lower layer forming a P-N junction plane therebetween. The sensor chips are separated into individual pieces by dicing along column and row interstices dividing the sensor chips. Conductor lines for supplying an electrical voltage for electrochemically etching the diaphragms are formed on and along the interstices. All of the conductor lines are removed by a dicing blade having a wider width than the conductor lines to avoid electrical leakage due to particles of conductor lines leftover on side surfaces of the diced out sensor chips.
摘要:
The display screen displays measure windows corresponding to the first through fourth measures for a melody to be composed. By clicking the play switch on the screen, a background accompaniment performance covering the four measures is played back to indicate the beats in the progressing tempo, thereby representing the rhythm speed. In time to the accompaniment progression, the user inputs note time points by tapping the input switch such as a space key in the keyboard to constitute a rhythm pattern for a melody progression. The measure window has a time axis in the horizontal direction and a pitch axis in the vertical direction. The tap-inputted note time points are exhibited at the corresponding positions along the time axis from left to right. Each point is dragged with the mouse pointer upward or downward to an intended pitch level, thereby establishing a pitch thereof. Alternatively, a pitch variation curve is drawn in the measure window plane to be sampled at the note time points, thereby establishing pitches of the respective note points. Only the pitches of important notes may be inputted, and the remainder may be automatically created in the apparatus according to a prepared algorithm.
摘要:
One physical segment 30 is divided into a plurality of fixed-length logic segments 31, where a logic segment management table 22 for management each logic segment 31 is provided. In registering a subprogram 40, a smaller sized region is assigned to the logic segment 31 by a segment size decision means 11, a logic segment producing means 12, and a logic segment register means 13. In deleting the subprogram 40, the logic segment 31 which comes to a not-use status is deleted by a logic segment retrieval means 14 and a logic segment delete means 15.
摘要:
A casted ingot of a heat treatment type Al—Zn—Mg series aluminum alloy comprising Zn: 4.0-8.0% by mass, Mg: 0.5-2.0% by mass, Cu: 0.05-0.5% by mass, Ti: 0.01-0.1% by mass, and any one or more of Mn: 0.1-0.7% by mass, Cr: 0.1-0.5% by mass and Zr: 0.05-0.3% by mass, and the balance being aluminum and incidental impurities is extruded at a homogenization treatment temperature after a homogenization treatment without cooled, and a resulted extruded material is die quenched at a cooling rate equal to or more than 100° C./min and then subjected to an artificial aging treatment, wherein the homogenization treatment is carried out by heating to the homogenization treatment temperature as 430-500° C. at a heating rate less than 750° C./hr or by heating to the homogenization treatment temperature and held the homogenization treatment temperature for 3 hours.
摘要:
An extruded member of Al—M13 Si aluminum alloy specially composed of Mg, Si, Fe, Cu, Zn, Ti, etc. which has the equiaxed re-crystallized grain structure in which intergranular precipitates 1 μm or larger are separate from one another at large average intervals and there are many cube orientations over the entire thickness region thereof so that it excels in both flexural crushing performance and corrosion resistance. The extruded member is suitable for use as automotive body reinforcement members which need outstanding lateral crushing performance under severe collision conditions as well as good corrosion resistance.
摘要:
A semiconductor device includes a semiconductor wafer having a weak portion and a removable passivation cap disposed on the wafer for covering the weak portion. The passivation cap has an absorption coefficient of a laser beam, which is smaller than that of the wafer. The cap has a capability of passing water therethrough. In a case where the device is diced and cut into a plurality of chips, the passivation cap can be removed easily without bonding the cap again. That is because the passivation cap remains one body after dicing.
摘要:
A semiconductor dynamic quantity sensor detects a dynamic force and a fault diagnosis through the use of a single bridge circuit. Sensor output terminals are connected to midpoints between gauge resistors to make a combination of the midpoints at which an equal electric potential is measured when no pressure is applied to a diaphragm of the sensor. Fault diagnostic output terminals are connected to wiring patterns in the same manner as the first output terminals. One of the sensor output terminals has three selectable terminals connected to different positions of the midpoint. One of the diagnostic output terminals also has three selectable terminals connected to different positions of the wiring patterns. Accordingly, an offset voltage of the sensor output and the fault diagnostic output can be adjusted appropriately when one of the selectable terminals are selected as appropriate.