公开(公告)号：US5575887A

公开(公告)日：1996-11-19

申请号：US409530

申请日：1995-03-24

申请人： Takahiko Yoshida ,  Kazushi Asami ,  Muneo Yorinaga ,  Tsuyoshi Fukada

发明人： Takahiko Yoshida ,  Kazushi Asami ,  Muneo Yorinaga ,  Tsuyoshi Fukada

IPC分类号： H05H1/46 ,  C23C14/40 ,  C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32697

摘要： A plasma etching method, which can form concave parts and/or opening parts on a substrate by performing etching at a high speed and does not damage an element part formed on the surface of the substrate, is disclosed. On a semiconductor substrate with one surface as an element part forming surface and the other surface having an insulating film thereon as an etching surface are formed concave parts and/or opening parts by means of etching by applying a high-frequency electric power to a reactive gas and generating plasma thereby. The substrate is disposed on an electrode having grounded electric potential with the insulating film positioned on the lower side and a conductive part material having grounded electric potential is disposed around the substrate. When one end of the conductive part material is contacted with the side of the etching surface of the substrate, electric charge generated on the surface of the substrate moves to the conductive part material, and the electric potential of the substrate is lowered.

摘要翻译： 公开了一种等离子体蚀刻方法，其可以通过高速蚀刻并且不损坏形成在基板表面上的元件部分而在基板上形成凹部和/或开口部。 在具有一个表面作为元件部分形成表面的半导体衬底上，并且其上具有作为蚀刻表面的绝缘膜的另一表面通过对反应性施加高频电力而通过蚀刻形成凹部和/或开口部分 气体并产生等离子体。 基板设置在具有接地电位的电极上，绝缘膜位于下侧，并且具有接地电位的导电部件材料设置在基板周围。 当导电部件材料的一端与基板的蚀刻表面的一侧接触时，在基板表面上产生的电荷移动到导电部件材料，并且基板的电位降低。

公开(公告)号：US5622901A

公开(公告)日：1997-04-22

申请号：US284292

申请日：1994-08-02

申请人： Tsuyoshi Fukada

发明人： Tsuyoshi Fukada

IPC分类号： G01L9/04 ,  G01L1/22 ,  G01L9/00 ,  G01L23/18 ,  H01L29/84 ,  H01L21/77

CPC分类号： G01L1/2262 ,  G01L1/2293 ,  G01L23/18 ,  G01L9/0055

摘要： In a semiconductor strain sensor, for example, using resistors of a polycrystalline semiconductor material such as polycrystalline silicon as strain gauges, the sum of the temperature coefficient of resistance (TCR) of the resistor and the temperature coefficient of strain sensitivity (TCK) is adjusted not by controlling the impurity carrier concentration but by controlling the resistivity, thereby an output fluctuation due to a change in the temperature can be suppressed.

摘要翻译： 在半导体应变传感器中，例如使用多晶硅等多晶半导体材料的电阻作为应变计，调整电阻器的温度系数（TCR）与应变灵敏度的温度系数（TCK）之和 不是通过控制杂质载流子浓度而是通过控制电阻率，从而可以抑制由于温度变化引起的输出波动。

公开(公告)号：US4671615A

公开(公告)日：1987-06-09

申请号：US688505

申请日：1985-01-03

申请人： Tsuyoshi Fukada ,  Yasutoshi Suzuki ,  Hiroshi Itoh ,  Shinya Ohmi ,  Kunihiko Hara

发明人： Tsuyoshi Fukada ,  Yasutoshi Suzuki ,  Hiroshi Itoh ,  Shinya Ohmi ,  Kunihiko Hara

IPC分类号： G02B5/08 ,  B60R1/04 ,  B60R1/08 ,  G02F1/13 ,  G02B17/00

CPC分类号： B60R1/088

摘要： A control apparatus for a dazzle-free reflection mirror of a vehicle is disclosed. The control apparatus is provided with a rear light sensor and a circuit for driving the reflection mirror into a dazzle-free condition in accordance with an intensity of a rear light detected by said rear light sensor when a light switch is turned on. The control apparatus is further provided with a winker manipulation detecting switch, a reverse position detecting switch and a steering wheel detecting switch for detecting a change in the moving direction of the vehicle. When one of them detects the change in the vehicle moving direction, the dazzle-free operation of the reflection mirror is disabled even if intensive light is incident to the reflection mirror from the rear of the vehicle.

摘要翻译： 公开了一种用于车辆的无眩光反射镜的控制装置。 控制装置设置有后光传感器和电路，用于当开关灯开启时，根据由所述后光传感器检测到的后光的强度将反射镜驱动到无眩光状态。 控制装置还设有方向指示操作检测开关，倒档位置检测开关和用于检测车辆移动方向变化的方向盘检测开关。 当其中一个检测到车辆移动方向的变化时，即使强光从车辆的后部入射到反射镜，反射镜的无眩光操作也被禁用。

公开(公告)号：US4623222A

公开(公告)日：1986-11-18

申请号：US593946

申请日：1984-03-27

申请人： Hiroshi Itoh ,  Shinya Ohmi ,  Yasutoshi Suzuki ,  Tsuyoshi Fukada ,  Kunihiko Hara

发明人： Hiroshi Itoh ,  Shinya Ohmi ,  Yasutoshi Suzuki ,  Tsuyoshi Fukada ,  Kunihiko Hara

IPC分类号： B60R1/08 ,  G02F1/133 ,  G02B17/00

CPC分类号： B60R1/088

摘要： A liquid crystal type dazzle-free reflection mirror arrangement which changes reflectivity of the incident light by way of changing the transmittivity of the incident light through a liquid crystal provided within a frame body is disclosed. A semitransparent mirror is positioned behind the liquid crystal and a photo sensor is positioned behind the semitransparent mirror. When the photo sensor detects that the intensity of the incident light passing through the semitransparent mirror, an alternating current electric field is applied to the liquid crystal which responsively decreases the transmittivity of the incident light. A heater for heating the liquid crystal is activated when a door of an automobile is opened and the temperature of the liquid crystal is low.

摘要翻译： 公开了一种通过改变入射光通过设置在框架体内的液晶的透射率来改变入射光的反射率的液晶型无眩光反射镜装置。 半透明镜位于液晶后面，光传感器位于半透明镜后面。 当光传感器检测到透过半透明反射镜的入射光的强度时，对液晶施加交流电场，从而响应地降低入射光的透射率。 当汽车的门打开并且液晶的温度低时，用于加热液晶的加热器被激活。

公开(公告)号：US20100005877A1

公开(公告)日：2010-01-14

申请号：US12458272

申请日：2009-07-07

申请人： Ryuichirou Abe ,  Tsuyoshi Fukada ,  Keisuke Suzui

发明人： Ryuichirou Abe ,  Tsuyoshi Fukada ,  Keisuke Suzui

IPC分类号： G01F1/68 ,  H01L21/30

CPC分类号： B81B7/0012 ,  B81B2201/0214 ,  G01F1/6845 ,  G01F1/692

摘要： A sensor includes: a silicon substrate having a hollow portion, which is arranged on a backside of the substrate; an insulation film disposed on a front side of the substrate and covering the hollow portion; a heater disposed on the insulation film, made of a semiconductor layer, and configured to generate heat; and an anti-stripping film for protecting the insulation film from being removed from the silicon substrate. The silicon substrate, the insulation film and the. semiconductor layer provide a SOI substrate. The hollow portion has a sidewall and a bottom. The anti-stripping film covers at least a boundary between the sidewall and the bottom of the hollow portion.

摘要翻译： 传感器包括：具有中空部分的硅衬底，其设置在衬底的背面; 绝缘膜，设置在所述基板的前侧并覆盖所述中空部; 设置在绝缘膜上的加热器，由半导体层制成，并且被配置为产生热量; 以及用于保护绝缘膜不被从硅衬底移除的防剥离膜。 硅衬底，绝缘膜和。 半导体层提供SOI衬底。 中空部分具有侧壁和底部。 防剥离膜至少覆盖中空部分的侧壁和底部之间的边界。

公开(公告)号：US20050216361A1

公开(公告)日：2005-09-29

申请号：US10951641

申请日：2004-09-29

申请人： Tsuyoshi Fukada

发明人： Tsuyoshi Fukada

IPC分类号： G06Q30/06 ,  G06Q50/00 ,  G06F17/60

CPC分类号： G06Q30/06 ,  G06Q30/0635

摘要： A business transaction processing system includes a server into which a purchasing information of a stockist, at a time when goods are supplied to a stockist from a plurality of suppliers, is inputted, and a supplier side terminal unit connected to the server through cable communication or wireless communication. The server is provided with a conversion unit for extracting purchasing data relating to an optional supplier of the suppliers from the purchasing information of the stockist and converting the extracted purchasing data into supply information of the optional supplier, and the supply information in the server is indicated on the supplier side terminal unit.

摘要翻译： 商业交易处理系统包括：服务器，其输入从多个供应商向库存商提供货物时的库存商的采购信息;以及通过有线通信连接到服务器的供应商侧终端单元， 无线通信。 服务器具有转换单元，用于从库存商的购买信息中提取与供应商的可选供应商有关的购买数据，并将所提取的采购数据转换为可选供应商的供应信息，并且指示服务器中的供应信息 在供应商侧终端单元。

公开(公告)号：US06308567B1

公开(公告)日：2001-10-30

申请号：US09458954

申请日：1999-12-10

申请人： Hirofumi Higuchi ,  Nobuyuki Ohya ,  Tsuyoshi Fukada

发明人： Hirofumi Higuchi ,  Nobuyuki Ohya ,  Tsuyoshi Fukada

IPC分类号： G01P904

CPC分类号： G01C19/56

摘要： A compact angular velocity sensor, which can improve an S/N (signal/noise) ratio. An angular velocity sensor includes an SOI substrate, four oscillatory masses movably supported to the SOI substrate, and four detection electrodes provided outer side of the oscillatory masses for detecting displacements of the oscillatory masses. The oscillatory masses are arranged point-symmetry with respect to a predetermined point K in a flat plane parallel to the SOI substrate. Each of the four oscillatory masses adjacent each other is oscillated in reverse phase in a circumstantial direction about the predetermined point K along the flat plane. When an angular velocity &OHgr; is generated about the predetermined point K, detection weights of the oscillatory masses are displaced along a direction perpendicular to oscillation direction in the flat plane. Capacitance changes between the detection weights and the detection electrodes are processed in a circuit portion so as to output angular velocity detection signal S1 due to Corioli's force with canceling external acceleration and centrifugal force acted to the detection weights of the oscillatory masses.

摘要翻译： 一个紧凑的角速度传感器，可以提高S / N（信号/噪声）比。 角速度传感器包括SOI基板，可移动地支撑到SOI基板的四个振荡块，以及设置在振荡块的外侧的四个检测电极，用于检测振荡质量的位移。 相对于与SOI衬底平行的平面中的预定点K，振荡质量被布置成点对称。 在彼此相邻的四个振荡质量块中的每一个沿着平面在围绕预定点K的环境方向上以相反方向振荡。 当围绕预定点K产生角速度OMEGA时，振荡质量的检测权重沿平面内与振荡方向垂直的方向移位。 在电路部分处理检测权重和检测电极之间的电容变化，以便通过抵消外部加速度和科氏力的角度来输出角速度检测信号S1，该离心力作用于振荡质量的检测重量。

公开(公告)号：US4687956A

公开(公告)日：1987-08-18

申请号：US670015

申请日：1984-11-09

申请人： Hiroshi Itoh ,  Yasutoshi Suzuki ,  Tsuyoshi Fukada ,  Shinya Ohmi ,  Kunihiko Hara

发明人： Hiroshi Itoh ,  Yasutoshi Suzuki ,  Tsuyoshi Fukada ,  Shinya Ohmi ,  Kunihiko Hara

IPC分类号： G09G3/18 ,  B60R1/08 ,  G02F1/133 ,  G02F1/13 ,  G09G3/36 ,  H03K3/26

CPC分类号： G02F1/133382 ,  B60R1/088

摘要： An apparatus for driving a liquid crystal element by an increased voltage and at a lowered frequency in conformity with temperature fall in the liquid crystal element so as to achieve complete driving of the element even in a low temperature range. In order to increase the driving voltage, the apparatus comprises a booster circuit for increasing a battery voltage, and a voltage divider circuit including an element-temperature sensor as a component thereof and serving to produce a control voltage by dividing the output voltage of the booster circuit. In such configuration, the booster circuit performs its operation in such a manner as to maintain constant the control voltage obtained from the voltage divider circuit.

摘要翻译： 一种用于通过增加的电压和降低的频率驱动液晶元件的装置，其符合液晶元件中的温度下降，从而即使在低温范围内也能实现元件的完全驱动。 为了增加驱动电压，该装置包括用于增加电池电压的升压电路，以及包括元件温度传感器作为其组成部分的分压电路，用于通过将升压器的输出电压除以来产生控制电压 电路。 在这种结构中，升压电路以保持从分压电路获得的控制电压恒定的方式进行其工作。

公开(公告)号：US07298022B2

公开(公告)日：2007-11-20

申请号：US11075881

申请日：2005-03-10

申请人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

发明人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

IPC分类号： H01L23/544

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，因此不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US06787866B2

公开(公告)日：2004-09-07

申请号：US10091497

申请日：2002-03-07

申请人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

发明人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

IPC分类号： H01L2984

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。