摘要:
A compact angular velocity sensor, which can improve an S/N (signal/noise) ratio. An angular velocity sensor includes an SOI substrate, four oscillatory masses movably supported to the SOI substrate, and four detection electrodes provided outer side of the oscillatory masses for detecting displacements of the oscillatory masses. The oscillatory masses are arranged point-symmetry with respect to a predetermined point K in a flat plane parallel to the SOI substrate. Each of the four oscillatory masses adjacent each other is oscillated in reverse phase in a circumstantial direction about the predetermined point K along the flat plane. When an angular velocity &OHgr; is generated about the predetermined point K, detection weights of the oscillatory masses are displaced along a direction perpendicular to oscillation direction in the flat plane. Capacitance changes between the detection weights and the detection electrodes are processed in a circuit portion so as to output angular velocity detection signal S1 due to Corioli's force with canceling external acceleration and centrifugal force acted to the detection weights of the oscillatory masses.
摘要:
A semiconductor accelerometer device is formed on an SOI substrate by micro-machining. A movable unit is supported at both ends, and a weight portion is movable in response to acceleration exerted in the detection direction. A movable electrode is formed in a comb shape integrally with the weight portion. A pair of fixed electrodes in a comb shape are cantilevered and interleaved with the movable electrode to face the movable electrode. A plurality of through holes is provided in the electrodes so that the electrodes have Rahmen structure which is a series of rectangular frames. This structure reduces the weight of each electrode while increasing the strength against twist force. The electrodes are less likely from breaking in response to an acceleration exerted in a direction perpendicular to the normal detection direction because of reduced weight.
摘要:
A semiconductor dynamic quantity sensor, for example, an acceleration sensor is formed on a SOI substrate having an activation layer and a supporting layer with an oxide film interposed therebetween. A structure for the sensor is formed in the activation layer. An opening is formed in the supporting layer and the oxide film to expose the structure. In this sensor, stress layer is formed in the activation layer at a side contacting the oxide film. The stress layer is removed at a region facing the opening to prevent the structure from cambering.
摘要:
A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.
摘要:
Plural semiconductor chips such as acceleration sensor chips formed on the first surface of a substrate are separated into individual pieces by dicing the substrate from the second surface thereof. A groove surrounding each sensor chip, along which the sensor chip is diced out, is formed at the same time the sensor chip is formed on the first surface. Before dicing, a protecting sheet covering the first surface is pasted along the sidewalls and the bottom wall of the groove. The groove is made sufficiently wide to ensure that the protecting sheet is bent along the walls of the groove without leaving a space between the groove and the protecting sheet. Thus, dicing dusts generated in the dicing process are prevented from being scattered and entering the sensor chip.
摘要:
In a semiconductor strain sensor, for example, using resistors of a polycrystalline semiconductor material such as polycrystalline silicon as strain gauges, the sum of the temperature coefficient of resistance (TCR) of the resistor and the temperature coefficient of strain sensitivity (TCK) is adjusted not by controlling the impurity carrier concentration but by controlling the resistivity, thereby an output fluctuation due to a change in the temperature can be suppressed.
摘要:
A control apparatus for a dazzle-free reflection mirror of a vehicle is disclosed. The control apparatus is provided with a rear light sensor and a circuit for driving the reflection mirror into a dazzle-free condition in accordance with an intensity of a rear light detected by said rear light sensor when a light switch is turned on. The control apparatus is further provided with a winker manipulation detecting switch, a reverse position detecting switch and a steering wheel detecting switch for detecting a change in the moving direction of the vehicle. When one of them detects the change in the vehicle moving direction, the dazzle-free operation of the reflection mirror is disabled even if intensive light is incident to the reflection mirror from the rear of the vehicle.
摘要:
A liquid crystal type dazzle-free reflection mirror arrangement which changes reflectivity of the incident light by way of changing the transmittivity of the incident light through a liquid crystal provided within a frame body is disclosed. A semitransparent mirror is positioned behind the liquid crystal and a photo sensor is positioned behind the semitransparent mirror. When the photo sensor detects that the intensity of the incident light passing through the semitransparent mirror, an alternating current electric field is applied to the liquid crystal which responsively decreases the transmittivity of the incident light. A heater for heating the liquid crystal is activated when a door of an automobile is opened and the temperature of the liquid crystal is low.
摘要:
A sensor includes: a silicon substrate having a hollow portion, which is arranged on a backside of the substrate; an insulation film disposed on a front side of the substrate and covering the hollow portion; a heater disposed on the insulation film, made of a semiconductor layer, and configured to generate heat; and an anti-stripping film for protecting the insulation film from being removed from the silicon substrate. The silicon substrate, the insulation film and the. semiconductor layer provide a SOI substrate. The hollow portion has a sidewall and a bottom. The anti-stripping film covers at least a boundary between the sidewall and the bottom of the hollow portion.
摘要:
A business transaction processing system includes a server into which a purchasing information of a stockist, at a time when goods are supplied to a stockist from a plurality of suppliers, is inputted, and a supplier side terminal unit connected to the server through cable communication or wireless communication. The server is provided with a conversion unit for extracting purchasing data relating to an optional supplier of the suppliers from the purchasing information of the stockist and converting the extracted purchasing data into supply information of the optional supplier, and the supply information in the server is indicated on the supplier side terminal unit.