摘要:
A resist mask having a satisfactory resolution effect may be obtained even in the case of use of exposure light having a wavelength of 200 nm or more. An opaque pattern 2a comprising an organic layer for transferring a pattern is constituted by a multi-layer formed by a photo-absorptive organic layer 3a having an light shielding effect or a light attenuating effect even relative to exposure light having a wavelength of 200 nm or more, and a resist layer 4a for chiefly patterning this.
摘要:
The present invention provides a method of manufacturing halftone phase shift masks in less steps to save time and cost and to increase the yield, and a halftone phase shift mask with higher phase- and size controllability. To achieve this, the halftone phase shift mask includes a structure having a shade band of resist film formed on the halftone film delineating fine patterns and around the area of fine pattern.
摘要:
In a masking pattern (a) for patterning word and data lines, length is changed between adjacent word lines so as to be shifted from each other at their tips, and furthermore, the tip of each word line is cut obliquely. It is thus possible to prevent the resist pattern from separation and contact of adjacent patterns. Consequently, it is also possible to prevent break failures of patterned lines and short failures between those patterned lines.
摘要:
Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.
摘要:
A method of fabricating a liquid crystal display device including a field effect transistor includes forming a gate electrode on an electrically insulating substrate, the gate electrode being located in a transistor region of the substrate; forming an electrically insulating film on the substrate and covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode in the transistor region; forming a display electrode on the electrically insulating substrate in a display region of the substrate, adjacent the transistor region, the drain electrode being electrically connected to the display electrode; and forming, in the transistor region, a semiconductor film of a .pi.-conjugated polymer on the source and drain electrodes and on the electrically insulating film between the source and drain electrodes in the transistor region; arranging a transparent plate, including a transparent electrode, opposite and spaced from the .pi.-conjugated polymer film and the display electrode with the transparent electrode opposite the display electrode; and injecting a liquid crystal material between the transparent and display electrodes and between the transparent plate and the .pi.-conjugated polymer film.
摘要:
Disclosed are methods for forming a resist pattern which solve a problem (dimensional precision degradation) caused by halation and interference phenomena due to reflected light from the substrate, and which are fine and have high precision even with substrates having high reflectivity or substrates having a transparent film or substrates with an uneven surface. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.
摘要:
An inflatable seatbelt system designed so that the thickness of the webbing, when maintained in a strap-like configuration, is minimized, and it is possible to eliminate the webbing folding process and to reduce the amount of base fabric used and yet possible to reliably inflate the webbing when an emergency situation occurs. A shoulder belt (2) is formed from a tubular webbing (17), a tube (16) inserted in the webbing (17), and a cover (15) covering the webbing (17). The tube (16) is made of an elastic material which can be formed relatively thin and which has heat resistance and relatively high strength, e.g., urethane rubber or silicone rubber. The cover (15) is made of a resin material, e.g., polyester. The webbing (17) is made of a knitted fabric formed into a tubular configuration by weft knitting. By the use of the knitted fabric, the webbing (17) is stretchable to a large extent in the lateral direction but does not practically stretch in the longitudinal direction.
摘要:
A semiconductor memory wherein a memory cell region having a plurality of memory cells and a relatively high altitude above the surface of semiconductor substrate is formed at a recessed part of the semiconductor substrate having the recessed part and a projected part, and wherein a peripheral circuit region having a comparatively low altitude from the surface of the semiconductor substrate is formed at the projected part of the semiconductor substrate.
摘要:
A color picture tube device equipped with a static convergence adjuster for outer electron beams. The magnetic lines of force of the quadrupole field produced by the adjuster have substantially straight vertical portions. The device is capable of suppressing broadening of the vertical diameters of the spots of the outer beams. Deterioration in the resolution concomitant with adjustment of the convergence of the outer beams can be suppressed.
摘要:
A thick polymer film containing an aromatic bisazide and/or an aromatic sulfonyl azide compound is formed on a substrate having topography level on its surface to flatten said surface and then heated or the whole surface thereof is exposed to a light. A mask pattern having a dry etching resistance higher than that of the polymer is formed on the polymer film, exposed parts of the polymer film are removed by the dry etching and the exposed parts of the film to be processed are removed to form a pattern.