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    Boron nitride system including an hBN starting material with a catalyst and a sintered cNB body having a high heat conductivity based on the catalyst
    21.
    发明授权
    Boron nitride system including an hBN starting material with a catalyst and a sintered cNB body having a high heat conductivity based on the catalyst 失效
    包括具有催化剂的hBN起始材料和基于催化剂具有高导热性的烧结cBN体的氮化硼系统

    公开(公告)号：US5332629A

    公开(公告)日：1994-07-26

    申请号：US46422

    申请日：1993-04-13

    Applicant: Hitoshi Sumiya ,  Shuichi Sato ,  Shuji Yazu

    Inventor： Hitoshi Sumiya ,  Shuichi Sato ,  Shuji Yazu

    IPC: C04B35/5831 ,  C04B41/52 ,  C04B41/89 ,  H01L23/373 ,  B32B15/04

    CPC classification number: H01L23/3731 ,  C04B35/5831 ,  C04B41/52 ,  C04B41/89 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/16152 ,  Y10T428/12576 ,  Y10T428/31678

    Abstract: A boron nitride system starts with an hBN material and yields a directly converted sintered cBN body having a high heat conductivity within the range of at least 4 W/cm..degree.C. to about 6.2 W/cm..degree.C. For this purpose the hBN starting material of the system has diffused therein an additive of an alkaline earth metal or alkali metal in an amount of from 0.6 mol % to 1.3 mol %. This starting material is directly converted into the cBN at a sintering temperature of at least 1350.degree. C. under a thermodynamically stabilized condition for the cBN, which contains cBN within the range of 99.9 to 99.3 wt. % of the sintered body and a metal remainder from the additive of the starting material within the range of 0.1 to 0.7 wt. % of the sintered body, except for minute naturally occurring components.

    Abstract translation: 氮化硼系统以hBN材料开始，并且产生具有至少4W / cm的范围内的高热导率的直接转化烧结cBN体。 ℃至约6.2W / cm。 为此，系统的hBN原料在其中扩散了0.6mol％至1.3mol％的碱土金属或碱金属的添加剂。 该原料在cBN的热力学稳定条件下，在至少1350℃的烧结温度下直接转化为cBN，其中cBN含量为99.9〜99.3重量％。 ％的烧结体和来自起始材料的添加剂的金属余量在0.1〜0.7重量％的范围内。 ％的烧结体，除了微小的天然成分。

    SINGLE-CRYSTAL DIAMOND AND MANUFACTURING METHOD THEREOF
    24.
    发明申请
    SINGLE-CRYSTAL DIAMOND AND MANUFACTURING METHOD THEREOF 有权
    单晶金刚石及其制造方法

    公开(公告)号：US20140219907A1

    公开(公告)日：2014-08-07

    申请号：US14241855

    申请日：2012-08-30

    Applicant: Kazuhiro Ikeda ,  Hitoshi Sumiya

    Inventor： Kazuhiro Ikeda ,  Hitoshi Sumiya

    IPC: C30B29/04 ,  C30B7/10

    CPC classification number: C30B29/04 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068 ,  C30B7/10 ,  C30B25/00

    Abstract: Single-crystal diamond is composed of carbon in which a concentration of a carbon isotope 12C is not lower than 99.9 mass % and a plurality of inevitable impurities other than carbon. The inevitable impurities include nitrogen, boron, hydrogen, and nickel, and a total content of nitrogen, boron, and hydrogen of the plurality of inevitable impurities is not higher than 0.01 mass %. In order to manufacture single-crystal diamond, initially, a hydrocarbon gas in which a concentration of the carbon isotope 12C is not lower than 99.9 mass % is subjected to denitrification.

    Abstract translation: 单晶金刚石由碳同位素12C的浓度不低于99.9质量％的碳和除碳以外的多个不可避免的杂质构成。 不可避免的杂质包括氮，硼，氢和镍，并且多个不可避免的杂质中的氮，硼和氢的总含量不高于0.01质量％。 为了制造单晶金刚石，首先，碳同位素12C的浓度不低于99.9质量％的烃气体进行脱氮。

    WIRE DRAWING DIE
    25.
    发明申请
    WIRE DRAWING DIE 有权
    电线图

    公开(公告)号：US20100043520A1

    公开(公告)日：2010-02-25

    申请号：US12523545

    申请日：2008-01-18

    Applicant: Hitoshi Sumiya ,  Makoto Yukawa

    Inventor： Hitoshi Sumiya ,  Makoto Yukawa

    IPC: B21C3/02

    CPC classification number: B21C3/025 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/0685 ,  B21C3/18 ,  B82Y30/00 ,  C04B35/52 ,  C04B35/645 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/656 ,  C04B2235/781 ,  C04B2235/783 ,  C04B2235/785 ,  C30B29/605

    Abstract: One object of the present invention is to provide a wire drawing die excellent in strength and wear resistance. The wire drawing die has a core formed using highly hard diamond polycrystalline body made substantially only of diamond and produced by directly converting a raw material composition including a non-diamond type carbon material into diamond and sintering the diamond at an ultra high pressure and an ultra high temperature without adding a sintering aid or a catalyst, the polycrystalline body having a mixed construction including fine-grained diamond crystals with a maximum grain size of less than or equal to 100 nm and an average grain size of less than or equal to 50 nm and plate-like or particulate coarse-grained diamond crystals with a minimum grain size of greater than or equal to 50 nm and a maximum grain size of less than or equal to 10000 nm.

    Abstract translation: 本发明的一个目的是提供一种强度和耐磨性优异的拉丝模具。 拉丝模具具有使用基本上仅由金刚石制成的高硬度金刚石多晶体形成的芯，其通过将包含非金刚石型碳材料的原料组合物直接转化为金刚石并以超高压和超高压烧结金刚石 高温而不添加烧结助剂或催化剂，所述多晶体具有混合结构，包括最大粒度小于或等于100nm的细晶粒金刚石晶体和小于或等于50nm的平均晶粒尺寸 以及最小晶粒尺寸大于或等于50nm并且最大晶粒尺寸小于或等于10000nm的板状或颗粒状粗粒金刚石晶体。

    High-hardness polycrystalline diamond and method of preparing the same
    26.
    发明申请
    High-hardness polycrystalline diamond and method of preparing the same 有权
    高硬度多晶金刚石及其制备方法

    公开(公告)号：US20090305039A1

    公开(公告)日：2009-12-10

    申请号：US11988891

    申请日：2006-07-21

    Applicant: Hitoshi Sumiya

    Inventor： Hitoshi Sumiya

    IPC: C01B31/06 ,  B01J3/06

    CPC classification number: B01J3/062 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/0685 ,  B82Y30/00 ,  C04B35/52 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/528 ,  C04B2235/5288 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/656 ,  C04B2235/78 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/96 ,  Y10T428/2982

    Abstract: There are provided sufficiently strong, hard, and heat resistant, dense and homogenous polycrystalline diamond applicable to cutting tools, dressers, dies and other working tools and excavation bits and the like, and a cutting tool having a cutting edge of the polycrystalline diamond. The polycrystalline diamond is formed substantially only of diamond formed using a composition of material containing a non diamond type carbon material, the composition of material being converted directly into diamond and sintered at ultra high pressure and ultra high temperature without aid of a sintering aid or a catalyst, and has a mixed microstructure having a fine crystal grain of diamond having a maximal grain size of at most 100 nm and an average grain size of at most 50 nm and a coarse crystal grain of diamond in the form of one of a platelet and a granule having a grain size of at least 50 nm and at most 10,000 nm.

    Abstract translation: 提供了适用于切割工具，修整器，模具和其他工作工具和挖掘钻头等的足够坚固，坚硬和耐热，致密且均匀的多晶金刚石，以及具有多晶金刚石切割边缘的切割工具。 多晶金刚石基本上仅由使用含有非金刚石型碳材料的材料的组合物形成的金刚石形成，材料的组成直接转化为金刚石并且在超高压和超高温下烧结而无助于烧结助剂或 催化剂，并且具有具有最大粒度为至多100nm，平均粒径为至多50nm的金刚石微细晶粒的混合微观结构，以及金刚石的粗晶粒，其形式为血小板和 颗粒尺寸为至少50nm且至多10,000nm的颗粒。

    Process for producing n-type semiconductor diamond and n-type semiconductor diamond
    27.
    发明申请
    Process for producing n-type semiconductor diamond and n-type semiconductor diamond 审中-公开
    制造n型半导体金刚石和n型半导体金刚石的方法

    公开(公告)号：US20060177962A1

    公开(公告)日：2006-08-10

    申请号：US10541184

    申请日：2003-12-22

    Applicant: Akihiko Namba ,  Yoshiyuki Yamamoto ,  Hitoshi Sumiya ,  Yoshiki Nishibayashi ,  Takahiro Imai

    Inventor： Akihiko Namba ,  Yoshiyuki Yamamoto ,  Hitoshi Sumiya ,  Yoshiki Nishibayashi ,  Takahiro Imai

    IPC: H01L21/00

    CPC classification number: H01L21/0415 ,  C30B29/04 ,  H01L21/265 ,  H01L29/167

    Abstract: A method of manufacturing n-type semiconductor diamond by the present invention is characterized in producing diamond incorporating Li and N by implanting Li ions into, so that 10 ppm thereof will be contained in, single-crystal diamond incorporating 10 ppm or more N, or else, in doping single-crystal diamond with Li and N ions, by implanting the ions so that ion-implantation depths at which the post-implantation Li and N concentrations each are 10 ppm or more will overlap, and thereafter annealing the diamond in a temperature range of from 800° C. or more to less than 1800° C. to electrically activate the Li and N and restore the diamond crystalline structure. In the present invention, n-type semiconductor diamond incorporates, from the surface of the crystal to the same depth, 10 ppm or more of each of Li and N, wherein its sheet resistance is 107 Ω/□ or less.

    Abstract translation: 通过本发明制造n型半导体金刚石的方法的特征在于通过将Li离子注入到Li中并掺入N的金刚石，使得其中含有10ppm将包含在包含10ppm或更多N的单晶金刚石中，或 否则，通过注入离子来掺杂具有Li和N离子的单晶金刚石，使得注入后的Li和N浓度各自为10ppm以上的离子注入深度将重叠，然后在金刚石中退火 温度范围为800℃以上至小于1800℃，以电激活Li和N并恢复金刚石晶体结构。 在本发明中，n型半导体金刚石从晶体表面到相同的深度掺入了Li和N的10ppm以上，其中薄膜电阻为10Ω/ □以下

    Cutting tool of a cubic boron nitride sintered compact
    28.
    发明授权
    Cutting tool of a cubic boron nitride sintered compact 有权
    立方氮化硼烧结体的切割工具

    公开(公告)号：US06737377B1

    公开(公告)日：2004-05-18

    申请号：US09462876

    申请日：2000-01-18

    Applicant: Hitoshi Sumiya ,  Shinya Uesaka

    Inventor： Hitoshi Sumiya ,  Shinya Uesaka

    IPC: C04B355831

    CPC classification number: C04B35/5831

    Abstract: The object of the present invention is to provide a cutting tool consisting of fine grain cBN free from a binder and having a grain size of at most 1 &mgr;m and having a high hardness, high strength and excellent heat resistance. The feature thereof consists in a cutting tool compring, as an edge part, a cubic boron nitride sintered compact containing cubic boron nitride having an average grain diameter of at most 1 &mgr;m, in which the cubic boron nitride sintered compact has, at the said edge part, an I(220)/I(111) of (220) diffraction intensity (I(220)) to (111) diffraction intensity (I(111)) ratio of at least 0.05 in X-ray diffraction of arbitrary direction and impurities are substantially not contained in the grain boundaries.

    Abstract translation: 本发明的目的是提供一种由不含粘合剂的细晶粒cBN组成的切削工具，其粒度至多为1um，硬度高，强度高，耐热性优异。 其特征在于，将作为边缘部分的立方氮化硼烧结体作为边缘部分，该立方氮化硼烧结体包含立方氮化硼烧结体，其中立方氮化硼烧结体的平均粒径至多为1微米，其中立方氮化硼烧结体在所述边缘处具有 （220））到（111）衍射强度（I（111））的I（220）/ I（111）比率在任意方向的X射线衍射中至少为0.05， 杂质基本上不包含在晶界中。

    Process for the synthesis of diamond
    29.
    发明授权
    Process for the synthesis of diamond 失效
    金刚石合成工艺

    公开(公告)号：US6129900A

    公开(公告)日：2000-10-10

    申请号：US307493

    申请日：1994-09-16

    Applicant: Shuichi Satoh ,  Hitoshi Sumiya ,  Kazuwo Tsuji ,  Yasushi Gouda

    Inventor： Shuichi Satoh ,  Hitoshi Sumiya ,  Kazuwo Tsuji ,  Yasushi Gouda

    IPC: B01J3/06

    CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  B01J2203/067 ,  B01J2203/068

    Abstract: A colorless and transparent, substantially inclusion-free diamond crystal which can be applied to decorative uses and optical parts is synthesized by a process using a temperature gradient method in an ultra-high pressure apparatus. This process comprises using, as a solvent for the growth of the crystal, at least one metal selected from the group consisting of Fe, Co, Ni, Mn and Cr (at least two metals in the case of containing Fe) and as a nitrogen getter for the removal of nitrogen in the solvent, at least one metal selected from the group consisting of Al, Ti, Zr, Hf, V, Nb and Ta in a proportion of 0.5 to 7% by weight (at most 2% by weight when using only Al) to the solvent metal.

    Abstract translation: PCT No.PCT / JP92 / 00149 Sec。 371日期：1992年10月14日 102（e）日期1992年10月14日PCT提交1992年2月14日PCT公布。 公开号WO92 / 14542 日期1992年9月3日可以应用于装饰用途和光学部件的无色透明的基本上不含夹杂的金刚石晶体通过在超高压装置中使用温度梯度法的方法合成。 该方法包括使用选自Fe，Co，Ni，Mn和Cr中的至少一种金属作为晶体生长的溶剂（在含有Fe的情况下至少有两种金属）和作为氮 吸附剂用于除去溶剂中的氮，至少一种选自Al，Ti，Zr，Hf，V，Nb和Ta的金属，其含量为0.5〜7重量％（最多2重量％ 当仅使用Al时）溶剂金属。

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