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    Method of removing photoresist and method of manufacturing a semiconductor device
    21.
    发明授权
    Method of removing photoresist and method of manufacturing a semiconductor device 失效
    去除光刻胶的方法和制造半导体器件的方法

    公开(公告)号：US07959738B2

    公开(公告)日：2011-06-14

    申请号：US11984340

    申请日：2007-11-16

    申请人： Dae-Hyuk Kang ,  Hyo-San Lee ,  Dong-Gyun Han ,  Chang-Ki Hong ,  Kun-Tack Lee

    发明人： Dae-Hyuk Kang ,  Hyo-San Lee ,  Dong-Gyun Han ,  Chang-Ki Hong ,  Kun-Tack Lee

    IPC分类号： H01L21/28

    CPC分类号： H01L21/31133 ,  G03F7/422 ,  G03F7/425 ,  H01L21/28061 ,  H01L29/4941 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method of removing a photoresist may include permeating supercritical carbon dioxide into the photoresist on a substrate having a conductive structure including a metal. The photoresist permeating the supercritical carbon dioxide may be easily removable. The photoresist permeating the supercritical carbon dioxide may be removed using a photoresist cleaning solution from the substrate. The photoresist cleaning solution may include an alkanolamine solution of about 8 percent by weight to about 20 percent by weight, a polar organic solution of about 25 percent by weight to about 40 percent by weight, a reducing agent of about 0.5 percent by weight to about 3 percent by weight with the remainder being water. The photoresist may be easily removed without damaging the conductive structure in a plasma process.

    摘要翻译： 去除光致抗蚀剂的方法可以包括在具有包括金属的导电结构的基底上的光致抗蚀剂中渗透超临界二氧化碳。 渗透超临​​界二氧化碳的光致抗蚀剂可以容易地去除。 可以使用来自基底的光致抗蚀剂清洁溶液去除渗透超临界二氧化碳的光致抗蚀剂。 光致抗蚀剂清洁溶液可以包括约8重量％至约20重量％的链烷醇胺溶液，约25重量％至约40重量％的极性有机溶液，约0.5重量％至约 3重量％，其余为水。 可以容易地去除光致抗蚀剂，而不会在等离子体工艺中损坏导电结构。

    Method of removing photoresist and method of manufacturing a semiconductor device
    22.
    发明申请
    Method of removing photoresist and method of manufacturing a semiconductor device 失效
    去除光刻胶的方法和制造半导体器件的方法

    公开(公告)号：US20080138972A1

    公开(公告)日：2008-06-12

    申请号：US11984340

    申请日：2007-11-16

    申请人： Dae-Hyuk Kang ,  Hyo-San Lee ,  Dong-Gyun Han ,  Chang-Ki Hong ,  Kun-Tack Lee

    发明人： Dae-Hyuk Kang ,  Hyo-San Lee ,  Dong-Gyun Han ,  Chang-Ki Hong ,  Kun-Tack Lee

    IPC分类号： H01L21/28 ,  B08B3/08

    CPC分类号： H01L21/31133 ,  G03F7/422 ,  G03F7/425 ,  H01L21/28061 ,  H01L29/4941 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

    摘要： A method of removing a photoresist may include permeating supercritical carbon dioxide into the photoresist on a substrate having a conductive structure including a metal. The photoresist permeating the supercritical carbon dioxide may be easily removable. The photoresist permeating the supercritical carbon dioxide may be removed using a photoresist cleaning solution from the substrate. The photoresist cleaning solution may include an alkanolamine solution of about 8 percent by weight to about 20 percent by weight, a polar organic solution of about 25 percent by weight to about 40 percent by weight, a reducing agent of about 0.5 percent by weight to about 3 percent by weight with the remainder being water. The photoresist may be easily removed without damaging the conductive structure in a plasma process.

    摘要翻译： 去除光致抗蚀剂的方法可以包括在具有包括金属的导电结构的基底上的光致抗蚀剂中渗透超临界二氧化碳。 渗透超临​​界二氧化碳的光致抗蚀剂可以容易地去除。 可以使用来自基底的光致抗蚀剂清洁溶液去除渗透超临界二氧化碳的光致抗蚀剂。 光致抗蚀剂清洁溶液可以包括约8重量％至约20重量％的链烷醇胺溶液，约25重量％至约40重量％的极性有机溶液，约0.5重量％至约 3重量％，其余为水。 可以容易地去除光致抗蚀剂，而不会在等离子体工艺中损坏导电结构。

    Method of fabricating a semiconductor device
    24.
    发明授权
    Method of fabricating a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07704828B2

    公开(公告)日：2010-04-27

    申请号：US11741639

    申请日：2007-04-27

    申请人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Sung-Il Cho

    发明人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Sung-Il Cho

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/91

    摘要： A method of fabricating a semiconductor device is provided. The method includes forming a mold for forming a storage electrode, forming sacrificial spacers at side walls of openings in the mold, forming a conductive film for a storage electrode along the inside of the openings, removing the mold by a wet etching process, removing the sacrificial spacers by a dry etching process, and sequentially forming a dielectric film and an upper electrode on the storage electrode.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括形成用于形成存储电极的模具，在模具的开口的侧壁处形成牺牲隔离物，沿着开口的内部形成用于存储电极的导电膜，通过湿法蚀刻工艺移除模具， 牺牲隔离物，并且在存储电极上依次形成电介质膜和上电极。

    Methods of Manufacturing Semiconductor Memory Devices with Unit Cells Having Charge Trapping Layers
    25.
    发明申请
    Methods of Manufacturing Semiconductor Memory Devices with Unit Cells Having Charge Trapping Layers 失效
    制造具有电荷陷阱层的单元电池的半导体存储器件的方法

    公开(公告)号：US20070264793A1

    公开(公告)日：2007-11-15

    申请号：US11746761

    申请日：2007-05-10

    申请人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Woo-Gwam Shim ,  Jong-Won Lee

    发明人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Woo-Gwam Shim ,  Jong-Won Lee

    IPC分类号： H01L21/76

    CPC分类号： H01L27/115 ,  H01L21/76229 ,  H01L27/11568

    摘要： In a method of manufacturing a semiconductor device such as a SONOS type semiconductor device, a trench is formed on a substrate. An isolation layer protruding from the substrate is formed to fill the trench. After a first layer is formed on the substrate, a preliminary second layer pattern is formed on the first layer. The preliminary second layer pattern has an upper face substantially lower than or substantially equal to an upper face of the isolation layer. A third layer is formed on the preliminary second layer and the isolation layer. A fourth layer is formed on the third layer. The fourth layer, the third layer, the preliminary second layer pattern and the first layer are partially etched to form a gate structure on the substrate. Source/drain regions are formed at portions of the substrate adjacent to the gate structure.

    摘要翻译： 在制造诸如SONOS型半导体器件的半导体器件的方法中，在衬底上形成沟槽。 形成从衬底突出的隔离层以填充沟槽。 在基板上形成第一层之后，在第一层上形成预备的第二层图案。 预备的第二层图案具有基本上低于或基本上等于隔离层的上表面的上表面。 在初步第二层和隔离层上形成第三层。 在第三层上形成第四层。 部分蚀刻第四层，第三层，初步第二层图案和第一层，以在基板上形成栅极结构。 源极/漏极区域形成在与栅极结构相邻的衬底的部分处。

    Transistor having a metal nitride layer pattern, etchant and methods of forming the same
    29.
    发明授权
    Transistor having a metal nitride layer pattern, etchant and methods of forming the same 有权
    具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法

    公开(公告)号：US08637942B2

    公开(公告)日：2014-01-28

    申请号：US12461992

    申请日：2009-08-31

    申请人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    发明人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

    IPC分类号： H01L29/78

    CPC分类号： H01L21/32134 ,  C09K13/02 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

    摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.

    摘要翻译： 提供具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法。 可以在半导体衬底上形成栅极绝缘层和/或金属氮化物层。 掩模层可以形成在金属氮化物层上。 使用掩模层作为蚀刻掩模，可以对金属氮化物层进行蚀刻处理，形成金属氮化物层图案。 可以具有氧化剂，螯合剂和/或pH调节混合物的蚀刻剂可以进行蚀刻。 在形成晶体管期间，这些方法可以减少金属氮化物层图案下的栅极绝缘层的蚀刻损伤。