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公开(公告)号：US10345706B2
公开(公告)日：2019-07-09
申请号：US14258489
申请日：2014-04-22
申请人： Hyun-Ji Song , Yun-Jun Kim , Go-Un Kim , Young-Min Kim , Hea-Jung Kim , Joon-Young Moon , Yo-Choul Park , Yu-Shin Park , You-Jung Park , Seung-Wook Shin , Yong-Woon Yoon , Chung-Heon Lee , Yoo-Jeong Choi , Seung-Hee Hong
发明人： Hyun-Ji Song , Yun-Jun Kim , Go-Un Kim , Young-Min Kim , Hea-Jung Kim , Joon-Young Moon , Yo-Choul Park , Yu-Shin Park , You-Jung Park , Seung-Wook Shin , Yong-Woon Yoon , Chung-Heon Lee , Yoo-Jeong Choi , Seung-Hee Hong
IPC分类号： G03F7/40 , G03F7/38 , G03F7/36 , G03F7/30 , G03F7/09 , G03F7/11 , C07C39/12 , C07C323/19 , C07C217/58 , C07C22/04 , C07C255/53 , C07C39/225 , C07D215/14 , C07D333/16 , C07D333/50 , C07D311/58
摘要： A monomer for a hardmask composition is represented by the following Chemical Formula 1,
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2.发明申请Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device 有权用于蚀刻氧化硅层的组合物，使用其的半导体器件的蚀刻方法和用于蚀刻半导体器件的组合物公开(公告)号：US20100035436A1
公开(公告)日：2010-02-11
申请号：US12461319
申请日：2009-08-07
申请人： Go-Un Kim , Hyo-San Lee , Myung-Kook Park , Ho-Seok Yang , Jeong-Nam Han , Chang-Ki Hong
发明人： Go-Un Kim , Hyo-San Lee , Myung-Kook Park , Ho-Seok Yang , Jeong-Nam Han , Chang-Ki Hong
IPC分类号： H01L21/306 , C09K13/08
CPC分类号： C09K13/08 , H01L21/31111
摘要： A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater.
摘要翻译： 用于蚀刻氧化硅层的组合物，蚀刻半导体器件的方法以及用于蚀刻包括氧化硅层和包含氟化氢，阴离子聚合物和去离子水的氮化物层的半导体器件的组合物，其中所述阴离子聚合物 以用于蚀刻氧化硅层的组合物的总重量为约0.001至约2重量％的量包含，并且氧化硅层相对于氮化物层的蚀刻选择性为约80或更大。
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公开(公告)号：US09665003B2
公开(公告)日：2017-05-30
申请号：US14263323
申请日：2014-04-28
申请人： Yoo-Jeong Choi , Yun-Jun Kim , Go-Un Kim , Young-Min Kim , Hea-Jung Kim , Joon-Young Moon , Yo-Choul Park , Yu-Shin Park , You-Jung Park , Hyun-Ji Song , Seung-Wook Shin , Yong-Woon Yoon , Chung-Heon Lee , Seung-Hee Hong
发明人： Yoo-Jeong Choi , Yun-Jun Kim , Go-Un Kim , Young-Min Kim , Hea-Jung Kim , Joon-Young Moon , Yo-Choul Park , Yu-Shin Park , You-Jung Park , Hyun-Ji Song , Seung-Wook Shin , Yong-Woon Yoon , Chung-Heon Lee , Seung-Hee Hong
摘要： A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent,
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4.发明申请MONOMER FOR HARDMASK COMPOSITION AND HARDMASK COMPOSITION INCLUDING THE MONOMER AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION 审中-公开HARDMASK组合物和HARDMASK组合物的单体包括单体和使用HARDMASK组合物形成图案的方法公开(公告)号：US20150001178A1
公开(公告)日：2015-01-01
申请号：US14258489
申请日：2014-04-22
申请人： Hyun-Ji SONG , Yun-Jun KIM , Go-Un KIM , Young-Min KIM , Hea-Jung KIM , Joon-Young MOON , Yo-Choul PARK , Yu-Shin PARK , You-Jung PARK , Seung-Wook SHIN , Yong-Woon YOON , Chung-Heon LEE , Yoo-Jeong CHOI , Seung-Hee HONG
发明人： Hyun-Ji SONG , Yun-Jun KIM , Go-Un KIM , Young-Min KIM , Hea-Jung KIM , Joon-Young MOON , Yo-Choul PARK , Yu-Shin PARK , You-Jung PARK , Seung-Wook SHIN , Yong-Woon YOON , Chung-Heon LEE , Yoo-Jeong CHOI , Seung-Hee HONG
IPC分类号： G03F1/00 , C07D311/58 , C07D333/50 , C07C39/17 , C07D333/16 , G03F7/40 , C07C39/225 , C07C255/53 , C07C22/04 , G03F7/16 , G03F7/20 , C07D215/14 , C07C35/21
CPC分类号： G03F7/40 , C07C22/04 , C07C39/12 , C07C39/225 , C07C217/58 , C07C255/53 , C07C323/19 , C07C2601/14 , C07C2603/50 , C07C2603/52 , C07C2603/54 , C07D215/14 , C07D311/58 , C07D333/16 , C07D333/50 , G03F7/09 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/30 , G03F7/36 , G03F7/38
摘要： A monomer for a hardmask composition is represented by the following Chemical Formula 1,
摘要翻译： 用于硬掩模组合物的单体由以下化学式1表示，
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5.发明授权Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device 有权用于蚀刻氧化硅层的组合物，使用其的半导体器件的蚀刻方法和用于蚀刻半导体器件的组合物公开(公告)号：US08685272B2
公开(公告)日：2014-04-01
申请号：US12461319
申请日：2009-08-07
申请人： Go-Un Kim , Hyo-San Lee , Myung-Kook Park , Ho-Seok Yang , Jeong-Nam Han , Chang-Ki Hong
发明人： Go-Un Kim , Hyo-San Lee , Myung-Kook Park , Ho-Seok Yang , Jeong-Nam Han , Chang-Ki Hong
IPC分类号： C09K13/08 , C09K13/00 , H01L21/302
CPC分类号： C09K13/08 , H01L21/31111
摘要： A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater.
摘要翻译： 用于蚀刻氧化硅层的组合物，蚀刻半导体器件的方法以及用于蚀刻包括氧化硅层和包含氟化氢，阴离子聚合物和去离子水的氮化物层的半导体器件的组合物，其中所述阴离子聚合物 以用于蚀刻氧化硅层的组合物的总重量为约0.001至约2重量％的量包含，并且氧化硅层相对于氮化物层的蚀刻选择性为约80或更大。
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6.发明授权公开(公告)号：US09312122B2
公开(公告)日：2016-04-12
申请号：US14090003
申请日：2013-11-26
申请人： Jin-Hee Bae , Han-Song Lee , Wan-Hee Lim , Go-Un Kim , Taek-Soo Kwak , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Youn-Jin Cho , Kwen-Woo Han , Byeong-Gyu Hwang
发明人： Jin-Hee Bae , Han-Song Lee , Wan-Hee Lim , Go-Un Kim , Taek-Soo Kwak , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Youn-Jin Cho , Kwen-Woo Han , Byeong-Gyu Hwang
CPC分类号： H01L21/0206 , C08G77/54 , C08G77/62 , C09D183/14 , C09D183/16 , C11D7/266 , C11D7/5022 , C11D11/0047 , H01L21/02087 , H01L21/0209 , H01L21/02164 , H01L21/02214 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L27/1085 , H01L28/40
摘要： A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:
摘要翻译： 一种用于绝缘层的冲洗液，所述漂洗液包括由以下化学式1表示的溶剂：
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7.发明申请HARDMASK COMPOSITION, METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE PATTERNS 有权HARDMASK组合物，使用HARDMASK组合物形成图案的方法和包括图案的半导体集成电路装置公开(公告)号：US20150004531A1
公开(公告)日：2015-01-01
申请号：US14263323
申请日：2014-04-28
申请人： Yoo-Jeong CHOI , Yun-Jun KIM , Go-Un KIM , Young-Min KIM , Hea-Jung KIM , Joon-Young MOON , Yo-Choul PARK , Yu-Shin PARK , You-Jung PARK , Hyun-Ji SONG , Seung-Wook SHIN , Yong-Woon YOON , Chung-Heon LEE , Seung-Hee HONG
发明人： Yoo-Jeong CHOI , Yun-Jun KIM , Go-Un KIM , Young-Min KIM , Hea-Jung KIM , Joon-Young MOON , Yo-Choul PARK , Yu-Shin PARK , You-Jung PARK , Hyun-Ji SONG , Seung-Wook SHIN , Yong-Woon YOON , Chung-Heon LEE , Seung-Hee HONG
摘要： A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent,
摘要翻译： 硬掩模组合物包括由以下化学式1表示的单体，包含由以下化学式2表示的部分的聚合物，包含由以下化学式3表示的部分的聚合物或其组合，以及溶剂，
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8.发明申请公开(公告)号：US20140315367A1
公开(公告)日：2014-10-23
申请号：US14090003
申请日：2013-11-26
申请人： Jin-Hee BAE , Han-Song LEE , Wan-Hee LIM , Go-Un KIM , Taek-Soo KWAK , Bo-Sun KIM , Sang-Kyun KIM , Yoong-Hee NA , Eun-Su PARK , Jin-Woo SEO , Hyun-Ji SONG , Youn-Jin CHO , Kwen-Woo HAN , Byeong-Gyu HWANG
发明人： Jin-Hee BAE , Han-Song LEE , Wan-Hee LIM , Go-Un KIM , Taek-Soo KWAK , Bo-Sun KIM , Sang-Kyun KIM , Yoong-Hee NA , Eun-Su PARK , Jin-Woo SEO , Hyun-Ji SONG , Youn-Jin CHO , Kwen-Woo HAN , Byeong-Gyu HWANG
IPC分类号： H01L21/02 , H01L27/108
CPC分类号： H01L21/0206 , C08G77/54 , C08G77/62 , C09D183/14 , C09D183/16 , C11D7/266 , C11D7/5022 , C11D11/0047 , H01L21/02087 , H01L21/0209 , H01L21/02164 , H01L21/02214 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L27/1085 , H01L28/40
摘要： A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:
摘要翻译： 一种用于绝缘层的冲洗液，所述漂洗液包括由以下化学式1表示的溶剂：
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9.发明申请PROCESS OF PREPARING A GAP FILLER AGENT, A GAP FILLER AGENT PREPARED USING SAME, AND A METHOD FOR MANUFACTURING SEMICONDUCTOR CAPACITOR USING THE GAP FILLER AGENT 有权制备GAP填料剂的方法，使用其制备的GAP填料剂以及使用GAP填料剂制造半导体电容器的方法公开(公告)号：US20140187017A1
公开(公告)日：2014-07-03
申请号：US14144738
申请日：2013-12-31
申请人： Jin-Hee BAE , Han-Song LEE , Taek-Soo KWAK , Go-Un KIM , Bo-Sun KIM , Sang-Kyun KIM , Yoong-Hee NA , Eun-Su PARK , Jin-Woo SEO , Hyun-Ji SONG , Sang-Hak LIM , Wan-Hee LIM , Seung-Hee HONG , Byeong-Gyu HWANG
发明人： Jin-Hee BAE , Han-Song LEE , Taek-Soo KWAK , Go-Un KIM , Bo-Sun KIM , Sang-Kyun KIM , Yoong-Hee NA , Eun-Su PARK , Jin-Woo SEO , Hyun-Ji SONG , Sang-Hak LIM , Wan-Hee LIM , Seung-Hee HONG , Byeong-Gyu HWANG
IPC分类号： H01L49/02
CPC分类号： H01L28/92 , C08G77/00 , C08G77/62 , C09D183/16 , H01L21/02222 , H01L21/02282 , H01L21/02326
摘要： A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.
摘要翻译： 制备间隙填充剂的方法包括向碱性溶剂中加入卤代硅烷，并且向碱性溶剂和卤代硅烷中添加约50至约70重量份的氨，基于100重量份的卤代硅烷 以约1g / hr至约15g / hr的速率。
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10.发明授权Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent 有权间隙填充剂的制备方法，使用该间隙填充剂的间隙填充剂，以及使用间隙填充剂制造半导体电容器的方法公开(公告)号：US09240443B2
公开(公告)日：2016-01-19
申请号：US14144738
申请日：2013-12-31
申请人： Jin-Hee Bae , Han-Song Lee , Taek-Soo Kwak , Go-Un Kim , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Sang-Hak Lim , Wan-Hee Lim , Seung-Hee Hong , Byeong-Gyu Hwang
发明人： Jin-Hee Bae , Han-Song Lee , Taek-Soo Kwak , Go-Un Kim , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Sang-Hak Lim , Wan-Hee Lim , Seung-Hee Hong , Byeong-Gyu Hwang
CPC分类号： H01L28/92 , C08G77/00 , C08G77/62 , C09D183/16 , H01L21/02222 , H01L21/02282 , H01L21/02326
摘要： A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.
摘要翻译： 制备间隙填充剂的方法包括向碱性溶剂中加入卤代硅烷，并且向碱性溶剂和卤代硅烷中添加约50至约70重量份的氨，基于100重量份的卤代硅烷 以约1g / hr至约15g / hr的速率。
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