公开(公告)号：US20180025911A1

公开(公告)日：2018-01-25

申请号：US15652786

申请日：2017-07-18

Applicant: IMEC VZW

Inventor： Amey Mahadev Walke ,  Nadine Collaert ,  Rita Rooyackers

IPC: H01L21/18 ,  H01L23/00 ,  H01L21/02 ,  H01L25/00 ,  H01L23/535 ,  H01L21/768 ,  H01L29/04 ,  H01L25/065

CPC classification number: H01L21/187 ,  H01L21/02387 ,  H01L21/76251 ,  H01L21/76895 ,  H01L21/845 ,  H01L23/535 ,  H01L23/66 ,  H01L24/32 ,  H01L25/0655 ,  H01L25/50 ,  H01L29/04 ,  H01L29/20 ,  H01L29/365 ,  H01L29/66462 ,  H01L29/7781 ,  H01L29/7787 ,  H01L29/7851 ,  H01L2224/32501

Abstract: A method for forming a semiconductor structure by bonding a donor substrate to a carrier substrate is disclosed herein. The donor substrate may include a plurality of semiconductor layers epitaxially grown on top of one another in, and optionally above, a trench of the donor substrate. The carrier substrate may include a first semiconductor device thereon. The method may include removing at least part of the donor substrate in such a way as to expose a semiconductor layer grown on the bottom of the trench, removing at least part of the exposed semiconductor layer, thereby modifying the plurality of semiconductor layers, and forming a second semiconductor device from the modified plurality of semiconductor layers.

公开(公告)号：US09419114B2

公开(公告)日：2016-08-16

申请号：US14599354

申请日：2015-01-16

Applicant: IMEC VZW ,  Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Amey Mahadev Walke ,  Anne VanDooren ,  Krishna Kumar Bhuwalka

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L21/306 ,  H01L21/311 ,  H01L21/28 ,  H01L29/739

CPC classification number: H01L29/66977 ,  H01L21/28017 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31144 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/66356 ,  H01L29/66477 ,  H01L29/7391 ,  H01L29/78

Abstract: A tunnel field-effect transistor (TFET) device is provided comprising a semiconductor substrate and a fin structure disposed thereon. The fin structure comprises a channel region and a source region disposed on the channel region. The TFET further comprises a drain region contacting the channel region, wherein the source region and the drain region are of opposite conductivity type. The TFET also comprises a pocket layer covering a gate interface portion of the source region and contacting at least part of the channel region. The TFET further comprises a gate dielectric layer covering the pocket layer and a gate electrode covering the gate dielectric layer. The gate interface portion of the source region comprises at least three mutually non-coplanar surface segments. A method for manufacturing such a TFET device is also provided.

Abstract translation: 提供隧道场效应晶体管（TFET）器件，其包括半导体衬底和布置在其上的鳍结构。 翅片结构包括沟道区和设置在沟道区上的源极区。 所述TFET还包括接触所述沟道区的漏极区，其中所述源极区和漏极区具有相反的导电类型。 TFET还包括覆盖源区域的栅极接口部分并且接触沟道区域的至少一部分的袋层。 所述TFET还包括覆盖所述袋层的栅介质层和覆盖所述栅介电层的栅电极。 源区域的栅极接口部分包括至少三个相互非共面的表面段。 还提供了一种用于制造这种TFET器件的方法。

公开(公告)号：US20150206958A1

公开(公告)日：2015-07-23

申请号：US14599354

申请日：2015-01-16

Applicant: IMEC VZW ,  Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Amey Mahadev Walke ,  Anne VanDooren ,  Krishna Kumar Bhuwalka

IPC: H01L29/66 ,  H01L29/10 ,  H01L21/28 ,  H01L21/306 ,  H01L21/311 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L29/66977 ,  H01L21/28017 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31144 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/66356 ,  H01L29/66477 ,  H01L29/7391 ,  H01L29/78

Abstract: A tunnel field-effect transistor (TFET) device is provided comprising a semiconductor substrate and a fin structure disposed thereon. The fin structure comprises a channel region and a source region disposed on the channel region. The TFET further comprises a drain region contacting the channel region, wherein the source region and the drain region are of opposite conductivity type. The TFET also comprises a pocket layer covering a gate interface portion of the source region and contacting at least part of the channel region. The TFET further comprises a gate dielectric layer covering the pocket layer and a gate electrode covering the gate dielectric layer. The gate interface portion of the source region comprises at least three mutually non-coplanar surface segments. A method for manufacturing such a TFET device is also provided.

Abstract translation: 提供隧道场效应晶体管（TFET）器件，其包括半导体衬底和布置在其上的鳍结构。 翅片结构包括沟道区和设置在沟道区上的源极区。 所述TFET还包括接触所述沟道区的漏极区，其中所述源极区和漏极区具有相反的导电类型。 TFET还包括覆盖源区域的栅极接口部分并且接触沟道区域的至少一部分的袋层。 所述TFET还包括覆盖所述袋层的栅介质层和覆盖所述栅介电层的栅电极。 源极区域的栅极接口部分包括至少三个相互非共面的表面段。 还提供了一种用于制造这种TFET器件的方法。