公开(公告)号：US09842643B2

公开(公告)日：2017-12-12

申请号：US15282484

申请日：2016-09-30

Applicant: Intel Corporation

Inventor： Daniel H. Morris ,  Uygar E. Avci ,  Rafael Rios ,  Ian A. Young

IPC: G11C11/40 ,  G11C11/419 ,  H03K3/356 ,  G11C11/412 ,  G11C5/14

CPC classification number: G11C11/419 ,  G11C5/145 ,  G11C11/412 ,  H01L27/1104 ,  H03K3/356104

Abstract: Embodiments include apparatuses, methods, and systems for a circuit to shift a voltage level. The circuit may include a first inverter that includes a first transistor coupled to pass a low voltage signal and a second inverter coupled to receive the low voltage signal. The circuit may further include a second transistor coupled to receive the low voltage signal from the second inverter to serve as a feedback device and produce a high voltage signal. In embodiments, the first transistor conducts asymmetrically to prevent crossover of the high voltage signal into the low voltage domain. A low voltage memory array is also described. In embodiments, the circuit to shift a voltage level may assist communication between a logic component including the low voltage memory array of a low voltage domain and a logic component of a high voltage domain. Additional embodiments may also be described.

公开(公告)号：US09490780B2

公开(公告)日：2016-11-08

申请号：US14575962

申请日：2014-12-18

Applicant: INTEL CORPORATION

Inventor： Daniel H. Morris ,  Uygar E. Avci ,  Rafael Rios ,  Ian A. Young

IPC: G11C5/00 ,  H03K3/356 ,  G11C11/419 ,  G11C5/14

CPC classification number: G11C11/419 ,  G11C5/145 ,  G11C11/412 ,  H01L27/1104 ,  H03K3/356104

Abstract: Embodiments include apparatuses, methods, and systems for a circuit to shift a voltage level. The circuit may include a first inverter that includes a first transistor coupled to pass a low voltage signal and a second inverter coupled to receive the low voltage signal. The circuit may further include a second transistor coupled to receive the low voltage signal from the second inverter to serve as a feedback device and produce a high voltage signal. In embodiments, the first transistor conducts asymmetrically to prevent crossover of the high voltage signal into the low voltage domain. A low voltage memory array is also described. In embodiments, the circuit to shift a voltage level may assist communication between a logic component including the low voltage memory array of a low voltage domain and a logic component of a high voltage domain. Additional embodiments may also be described.

Abstract translation: 实施例包括用于移位电压电平的电路的装置，方法和系统。 电路可以包括第一反相器，其包括耦合以传递低电压信号的第一晶体管和耦合以接收低电压信号的第二反相器。 电路还可以包括第二晶体管，其被耦合以从第二反相器接收低电压信号，以用作反馈装置并产生高电压信号。 在实施例中，第一晶体管不对称地导通，以防止高电压信号到低电压域的交叉。 还描述了低电压存储器阵列。 在实施例中，用于移位电压电平的电路可以有助于包括低电压域的低电压存储器阵列和高电压域的逻辑分量的逻辑组件之间的通信。 还可以描述另外的实施例。

公开(公告)号：US11735652B2

公开(公告)日：2023-08-22

申请号：US16635739

申请日：2017-09-28

Applicant: Intel Corporation

Inventor： Seiyon Kim ,  Uygar E. Avci ,  Joshua M. Howard ,  Ian A. Young ,  Daniel H. Morris

IPC: H01L29/66 ,  H01L29/51

CPC classification number: H01L29/6684 ,  H01L29/516

Abstract: Field effect transistors having a ferroelectric or antiferroelectric gate dielectric structure are described. In an example, an integrated circuit structure includes a semiconductor channel structure includes a monocrystalline material. A gate dielectric is over the semiconductor channel structure. The gate dielectric includes a ferroelectric or antiferroelectric polycrystalline material layer. A gate electrode has a conductive layer on the ferroelectric or antiferroelectric polycrystalline material layer, the conductive layer including a metal. A first source or drain structure is at a first side of the gate electrode. A second source or drain structure is at a second side of the gate electrode opposite the first side.

公开(公告)号：US11734174B2

公开(公告)日：2023-08-22

申请号：US16576687

申请日：2019-09-19

Applicant: Intel Corporation

Inventor： Huichu Liu ,  Tanay Karnik ,  Tejpal Singh ,  Yen-Cheng Liu ,  Lavanya Subramanian ,  Mahesh Kumashikar ,  Sri Harsha Choday ,  Sreenivas Subramoney ,  Kaushik Vaidyanathan ,  Daniel H. Morris ,  Uygar E. Avci ,  Ian A. Young

IPC: G06F12/08 ,  G06F12/0804 ,  G06F12/0866 ,  G06F12/0806 ,  G06F11/20

CPC classification number: G06F12/0804 ,  G06F11/2089 ,  G06F12/0806 ,  G06F12/0866

Abstract: Described is an low overhead method and apparatus to reconfigure a pair of buffered interconnect links to operate in one of these three modes—first mode (e.g., bandwidth mode), second mode (e.g., latency mode), and third mode (e.g., energy mode). In bandwidth mode, each link in the pair buffered interconnect links carries a unique signal from source to destination. In latency mode, both links in the pair carry the same signal from source to destination, where one link in the pair is “primary” and other is called the “assist”. Temporal alignment of transitions in this pair of buffered interconnects reduces the effective capacitance of primary, thereby reducing delay or latency. In energy mode, one link in the pair, the primary, alone carries a signal, while the other link in the pair is idle. An idle neighbor on one side reduces energy consumption of the primary.

公开(公告)号：US11502103B2

公开(公告)日：2022-11-15

申请号：US16114272

申请日：2018-08-28

Applicant: Intel Corporation

Inventor： Daniel H. Morris ,  Seiyon Kim ,  Uygar E. Avci ,  Ian A. Young

IPC: G11C11/22 ,  H01L27/1159 ,  H01L29/78 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66

Abstract: Described herein are ferroelectric (FE) memory cells that include transistors having gates with FE capacitors integrated therein. An example memory cell includes a transistor having a semiconductor channel material, a gate dielectric over the semiconductor material, a first conductor material over the gate dielectric, a FE material over the first conductor material, and a second conductor material over the FE material. The first and second conductor materials form, respectively, first and second capacitor electrodes of a capacitor, where the first and second capacitor electrodes are separated by the FE material (hence, a “FE capacitor”). Separating a FE material from a semiconductor channel material of a transistor with a layer of a gate dielectric and a layer of a first conductor material eliminates the FE-semiconductor interface that may cause endurance issues in some other FE memory cells.

公开(公告)号：US11355504B2

公开(公告)日：2022-06-07

申请号：US15994227

申请日：2018-05-31

Applicant: Intel Corporation

Inventor： Daniel H. Morris ,  Uygar E. Avci ,  Ian A. Young

IPC: G11C11/22 ,  H01L27/11507 ,  H01L49/02

Abstract: Described herein are anti-ferroelectric (AFE) memory cells and corresponding methods and devices. For example, in some embodiments, an AFE memory cell disclosed herein includes a capacitor employing an AFE material between two capacitor electrodes. Applying a voltage to one electrode of such capacitor allows boosting the charge at the other electrode, where nonlinear behavior of the AFE material between the two electrodes may advantageously manifest itself in that, for a given voltage applied to the first electrode, a factor by which the charge is boosted at the second electrode of the capacitor may be substantially different for different values of charge at that electrode before the boost. Connecting the second capacitor electrode to a storage node of the memory cell may then allow boosting the charge on the storage node so that different logic states of the memory cell become more clearly resolvable, enabling increased retention times.

公开(公告)号：US20210089448A1

公开(公告)日：2021-03-25

申请号：US16576687

申请日：2019-09-19

Applicant: Intel Corporation

Inventor： Huichu Liu ,  Tanay Karnik ,  Tejpal Singh ,  Yen-Cheng Liu ,  Lavanya Subramanian ,  Mahesh Kumashikar ,  Sri Harsha Chodav ,  Sreenivas Subramoney ,  Kaushik Vaidyanathan ,  Daniel H. Morris ,  Uygar E. Avci ,  Ian A. Young

IPC: G06F12/0804 ,  G06F11/20 ,  G06F12/0806 ,  G06F12/0866

Abstract: Described is an low overhead method and apparatus to reconfigure a pair of buffered interconnect links to operate in one of these three modes—first mode (e.g., bandwidth mode), second mode (e.g., latency mode), and third mode (e.g., energy mode). In bandwidth mode, each link in the pair buffered interconnect links carries a unique signal from source to destination. In latency mode, both links in the pair carry the same signal from source to destination, where one link in the pair is “primary” and other is called the “assist”. Temporal alignment of transitions in this pair of buffered interconnects reduces the effective capacitance of primary, thereby reducing delay or latency. In energy mode, one link in the pair, the primary, alone carries a signal, while the other link in the pair is idle. An idle neighbor on one side reduces energy consumption of the primary.

公开(公告)号：US10832761B2

公开(公告)日：2020-11-10

申请号：US16732951

申请日：2020-01-02

Applicant: Intel Corporation

Inventor： Daniel H. Morris ,  Uygar E. Avci ,  Ian A. Young

IPC: G11C11/00 ,  G11C11/412 ,  G11C8/16 ,  G11C11/419 ,  H01L27/11 ,  G11C11/22

Abstract: One embodiment provides an apparatus. The apparatus includes a first inverter comprising a first pull up transistor and a first pull down transistor; a second inverter cross coupled to the first inverter, the second inverter comprising a second pull up transistor and a second pull down transistor; a first access transistor coupled to the first inverter; and a second access transistor coupled to the second inverter. A gate electrode of one transistor of each inverter comprises a polarization layer.

公开(公告)号：US10777250B2

公开(公告)日：2020-09-15

申请号：US16144896

申请日：2018-09-27

Applicant: Intel Corporation

Inventor： Kaushik Vaidyanathan ,  Daniel H. Morris ,  Huichu Liu ,  Dileep J. Kurian ,  Uygar E. Avci ,  Tanay Karnik ,  Ian A. Young

IPC: G11C11/22 ,  G06F1/3234 ,  G11C11/413 ,  G11C14/00

Abstract: Embodiments include apparatuses, methods, and systems associated with save-restore circuitry including metal-ferroelectric-metal (MFM) devices. The save-restore circuitry may be coupled to a bit node and/or bit bar node of a pair of cross-coupled inverters to save the state of the bit node and/or bit bar node when an associated circuit block transitions to a sleep state, and restore the state of the bit node and/or bit bar node when the associated circuit block transitions from the sleep state to an active state. The save-restore circuitry may be used in a flip-flop circuit, a register file circuit, and/or another suitable type of circuit. The save-restore circuitry may include a transmission gate coupled between the bit node (or bit bar node) and an internal node, and an MFM device coupled between the internal node and a plate line. Other embodiments may be described and claimed.

公开(公告)号：US10734378B2

公开(公告)日：2020-08-04

申请号：US16080914

申请日：2016-04-01

Applicant: INTEL CORPORATION

Inventor： Daniel H. Morris ,  Uygar E. Avci ,  Ian A. Young

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/51 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/49

Abstract: One embodiment provides an apparatus. The apparatus includes a first transistor and a second transistor. The first transistor includes a first drain, a first source coupled to the first drain by a first channel, and a first gate stack comprising a plurality of layers. The second transistor includes a second drain, a second source coupled to the second drain by a second channel, and a second gate stack comprising a plurality of layers. Each gate stack includes a work function material layer to optimize a threshold voltage variation between the transistors.