公开(公告)号：US20160224148A1

公开(公告)日：2016-08-04

申请号：US14778142

申请日：2014-12-16

Applicant: Intel Corporation

Inventor： Sven ALBERS ,  Klaus Reingruber ,  Teodora Ossiander ,  Andreas Wolter ,  Sonja Koller ,  Georg Seidemann ,  Jan Proschwitz ,  Hans-Joachim Barth ,  Bastiaan Elshof

IPC: G06F3/044 ,  H04B1/3827

CPC classification number: G06F3/044 ,  G01L1/24 ,  G06F1/163 ,  G06F3/03547 ,  G06F3/038 ,  G06F3/042 ,  G06F3/045 ,  G06F2203/04102 ,  G06F2203/04109 ,  H04B1/385

Abstract: Some forms relate to wearable computing devices that include a “touch pad” like interface. In some forms, the example wearable computing devices may be integrated with (or attached to) textiles (i.e. clothing). In other forms, the example wearable computing devices may be attached directly to the skin of someone (i.e., similar to a bandage) that utilizes any of the example wearable computing devices. The example wearable computing devices include a flexible touch pad that may allow a user of the wearable computing device to more easily operate the wearable computing device. The example wearable computing devices described herein may include a variety of electronics. Some examples include a power supply and/or a communication device among other types of electronics.

Abstract translation: 一些形式涉及包括诸如接口的“触摸板”的可穿戴计算设备。 在一些形式中，可穿戴式计算设备的示例可以与（或附着）纺织品（即服装）集成。 在其他形式中，可穿戴式计算设备的示例可以直接附接到使用任何示例性可穿戴计算设备的某人的皮肤（即类似于绷带）。 示例性可穿戴计算设备包括柔性触摸板，其可以允许可穿戴计算设备的用户更容易地操作可穿戴式计算设备。 本文所述的示例性可穿戴计算设备可以包括各种电子设备。 一些示例包括电源和/或其他类型的电子设备中的通信设备。

公开(公告)号：US20250132259A1

公开(公告)日：2025-04-24

申请号：US18989232

申请日：2024-12-20

Applicant: Intel Corporation

Inventor： Bernd Waidhas ,  Carlton Hanna ,  Stephen Morein ,  Lizabeth Keser ,  Georg Seidemann

IPC: H01L23/538 ,  H01L23/50 ,  H01L23/522

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate, having a surface, including a first conductive pathway electrically coupled to a power source; a first microelectronic component, having an active side electrically coupled to the surface of the package substrate and an opposing back side, surrounded by an insulating material; a second microelectronic component, having an active side electrically coupled to the surface of the package substrate and an opposing back side, surrounded by the insulating material and including a through-substrate via (TSV) electrically coupled to the first conductive pathway; and a redistribution layer (RDL), on the insulating material, including a second conductive pathway electrically coupling the TSV, the second surface of the second microelectronic component, and the second surface of the first microelectronic component.

公开(公告)号：US12243856B2

公开(公告)日：2025-03-04

申请号：US18217000

申请日：2023-06-30

Applicant: Intel Corporation

Inventor： David O'Sullivan ,  Georg Seidemann ,  Richard Patten ,  Bernd Waidhas

IPC: H01L25/10 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L25/00

Abstract: Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a mold over and around a first die and a first via. The semiconductor package has a conductive pad of a first redistribution layer disposed on a top surface of the first die and/or a top surface of the mold. The semiconductor package includes a second die having a solder ball coupled to a die pad on a bottom surface of the second die, where the solder ball of the second die is coupled to the first redistribution layer. The first redistribution layer couples the second die to the first die, where the second die has a first edge and a second edge, and where the first edge is positioned within a footprint of the first die and the second edge is positioned outside the footprint of the first die.

公开(公告)号：US12211796B2

公开(公告)日：2025-01-28

申请号：US17355747

申请日：2021-06-23

Applicant: Intel Corporation

Inventor： Bernd Waidhas ,  Carlton Hanna ,  Stephen Morein ,  Lizabeth Keser ,  Georg Seidemann

IPC: H01L23/538 ,  H01L23/50 ,  H01L23/522

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway electrically coupled to a power source; a first microelectronic component, embedded in an insulating material on the surface of the package substrate, including a through-substrate via (TSV) electrically coupled to the first conductive pathway; a second microelectronic component embedded in the insulating material; and a redistribution layer on the insulating material including a second conductive pathway electrically coupling the TSV, the second microelectronic component, and the first microelectronic component.

公开(公告)号：US20240429221A1

公开(公告)日：2024-12-26

申请号：US18339685

申请日：2023-06-22

Applicant: Intel Corporation

Inventor： Bernd Waidhas ,  Thomas Wagner ,  Georg Seidemann ,  Nicolas Richaud ,  Manisha Dutta ,  Georgios Dogiamis ,  Harshit Dhakad ,  Michael Langenbuch

IPC: H01L25/18 ,  H01L23/31 ,  H01L25/00 ,  H01L27/01 ,  H01Q1/22 ,  H01Q9/04

Abstract: Glass layers and capacitors for use with integrated circuit packages are disclosed. An example integrated circuit (IC) package includes a semiconductor die, a glass layer, and a capacitor electrically coupled to the semiconductor die, at least one side of the capacitor enclosed by the glass layer, the capacitor positioned closer to the glass layer than the semiconductor die is to the glass layer.

公开(公告)号：US12125815B2

公开(公告)日：2024-10-22

申请号：US17131663

申请日：2020-12-22

Applicant: Intel Corporation

Inventor： Bernd Waidhas ,  Andreas Wolter ,  Georg Seidemann ,  Thomas Wagner

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/538

CPC classification number: H01L24/20 ,  H01L23/3157 ,  H01L23/5386 ,  H01L24/06 ,  H01L24/13 ,  H01L2924/3511 ,  H01L2924/381

Abstract: Embodiments disclosed herein include electronic package and methods of forming such packages. In an embodiment, an electronic package comprises a mold layer and a first die embedded in the mold layer. In an embodiment, the first die comprises first pads at a first pitch and second pads at a second pitch. In an embodiment, the electronic package further comprises a second die embedded in the mold layer, where the second die comprises third pads at the first pitch and fourth pads at the second pitch. In an embodiment, a bridge die is embedded in the mold layer, and the bridge die electrically couples the second pads to the fourth pads.

公开(公告)号：US11877403B2

公开(公告)日：2024-01-16

申请号：US17486462

申请日：2021-09-27

Applicant: Intel Corporation

Inventor： Georg Seidemann ,  Sonja Koller ,  Bernd Waidhas

IPC: H05K3/34 ,  H01L23/498

CPC classification number: H05K3/3436 ,  H01L23/49816

Abstract: A printed wiring-board island relieves added complexity to a printed circuit board. The printed wiring-board island creates an island form factor in the printed circuit board. Coupling of a semiconductive device package to the printed wiring-board island includes a ball-grid array. The ball-grid array can at least partially penetrate the printed wiring-board island.

公开(公告)号：US20230197599A1

公开(公告)日：2023-06-22

申请号：US17554112

申请日：2021-12-17

Applicant: Intel Corporation

Inventor： Bernd Waidhas ,  Harald Gossner ,  Wolfgang Molzer ,  Georg Seidemann ,  Michael Langenbuch ,  Martin Ostermayr ,  Joachim Singer ,  Thomas Wagner ,  Klaus Herold

IPC: H01L23/522 ,  H01L21/8238 ,  H01L23/528 ,  H01L23/535 ,  H01L27/092

CPC classification number: H01L23/5226 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/5286 ,  H01L23/535 ,  H01L27/0924

Abstract: IC devices including BPRs with integrated decoupling capacitance are disclosed. An example IC device includes a first layer comprising a transistor and a support structure adjoining the first layer. The support structure includes BPRs, which are power rails buried in the support structure, and a decoupling capacitor based on the BPRs. The conductive cores of the BPRs are the electrodes of the decoupling capacitor. The dielectric barriers of the BPRs can be the dielectric of the decupling capacitor. The dielectric of the decupling capacitor may also include a dielectric element between the BPRs. Additionally or alternatively, the IC device includes another decoupling capacitor at the backside of the support structure. The other decoupling capacitor is coupled to the BPRs and can provide additional decoupling capacitance for stabilizing power supply facilitated by the BPRs.

公开(公告)号：US20230187477A1

公开(公告)日：2023-06-15

申请号：US17548546

申请日：2021-12-12

Applicant: Intel Corporation

Inventor： Martin Ostermayr ,  Georg Seidemann ,  Walther Lutz ,  Joachim Assenmacher

IPC: H01L49/02 ,  H01L29/732

CPC classification number: H01L28/60 ,  H01L29/732

Abstract: Capacitors based on stacks of nanoribbons and associated devices and systems are disclosed. In particular, a stack of at least two nanoribbons may be used to provide a two-terminal device referred to herein as a “nanoribbon-based capacitor,” where one nanoribbon serves as a first capacitor electrode and another nanoribbon serves as a second capacitor electrode. Using portions of nanoribbon stacks to implement nanoribbon-based capacitors could provide an appealing alternative to conventional capacitor implementations because it would require only modest process changes compared to fabrication of nanoribbon-based FETs and because nanoribbon-based capacitors could be placed close to active devices. Furthermore, with a few additional process steps, nanoribbon-based capacitors may, advantageously, be extended to implement other circuit blocks such as nanoribbon-based BJTs or three-nanoribbon arrangements with a common connection between two anodes and a separate connection to a cathode.

公开(公告)号：US20230163170A1

公开(公告)日：2023-05-25

申请号：US17530836

申请日：2021-11-19

Applicant: Intel Corporation

Inventor： Martin Ostermayr ,  Joachim Assenmacher ,  Georg Seidemann ,  Klaus Herold ,  Walther Lutz

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/0673 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/66742

Abstract: Fabrication methods that may provide greater versatility in tuning threshold voltage of transistors implemented in different nanoribbons within a given stack and in tuning threshold voltage of transistors implemented in adjacent nanoribbon stacks, as well as corresponding devices, are disclosed. An example fabrication method includes selectively doping portions of semiconductor layers from which individual nanoribbons will be formed later. The selective doping is performed on a layer-by-layer basis, i.e., after a given semiconductor layer is deposited and before the next layer is deposited. In this manner, some nanoribbons of a given nanoribbon stack may be doped, while other nanoribbons of the same stack may be substantially undoped, or, more generally, different nanoribbons of a given nanoribbon stack may have different dopant concentrations. The differences in the dopant concentration of different nanoribbons within the stack advantageously allows forming transistors with different threshold voltages in a single nanoribbon stack.