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    Silver Based Conductive Layer for Flexible Electronics
    21.
    发明申请
    Silver Based Conductive Layer for Flexible Electronics 有权
    银导电层柔性电子学

    公开(公告)号：US20150327366A1

    公开(公告)日：2015-11-12

    申请号：US14807336

    申请日：2015-07-23

    Applicant: Intermolecular Inc.

    Inventor： Mohd Fadzli Anwar Hassan ,  Guowen Ding ,  Minh Huu Le ,  Minh Anh Anh Nguyen ,  Zhi-Wen Wen Sun ,  Guizhen Zhang

    IPC: H05K1/09 ,  H05K1/02

    CPC classification number: H05K1/092 ,  C23C28/42 ,  C23C30/00 ,  H01L51/0097 ,  H01L51/5234 ,  H05K1/0274 ,  Y10T428/265

    Abstract: Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack can have improved ductility property.

    Abstract translation: 制造导电叠层的方法包括形成夹在两层透明导电氧化物（例如氧化铟锡（ITO））之间的掺杂或合金化的银层。 掺杂的银或银合金层可以是薄的，例如在1.5至20nm之间，因此可以是透明的。 掺杂的银或银合金可以提供改善的延展性，允许导电叠层可弯曲。 透明导电氧化物层也可以是薄的，使得导电叠层可以具有改善的延展性。

    Methods for forming resistive switching memory elements
    22.
    发明授权
    Methods for forming resistive switching memory elements 有权

    公开(公告)号：US08865518B2

    公开(公告)日：2014-10-21

    申请号：US13909324

    申请日：2013-06-04

    Applicant: Intermolecular Inc.

    Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jihong Tong

    IPC: H01L21/00

    CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

    Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

    Low-E Panel with Improved Barrier Layer Process Window and Method for Forming the Same
    23.
    发明申请
    Low-E Panel with Improved Barrier Layer Process Window and Method for Forming the Same 审中-公开
    具有改进的阻挡层工艺窗口的Low-E面板及其形成方法

    公开(公告)号：US20140272390A1

    公开(公告)日：2014-09-18

    申请号：US13834261

    申请日：2013-03-15

    Applicant: INTERMOLECULAR INC.

    Inventor： Guowen Ding ,  Brent Boyce ,  Minh Huu Le ,  Zhi-Wen Wen Sun ,  Yu Wang

    IPC: C03C17/36

    CPC classification number: C03C17/366 ,  C03C17/36 ,  C03C17/3626 ,  C03C17/3644 ,  Y10T428/265

    Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A barrier layer is formed above the reflective layer. A nitride-containing layer is formed above the barrier layer. The nitride-containing layer has a thickness that is 1 nm or less. A over-coating layer is formed above the nitride-containing layer. The over-coating layer includes a different material than that of the nitride-containing layer.

    Abstract translation: 本文提供的实施例描述了用于形成低e板的低e板和方法。 提供透明基板。 在透明基板的上方形成反射层。 在反射层上形成阻挡层。 在阻挡层上方形成含氮化物层。 含氮化物层的厚度为1nm以下。 在含氮化物层的上方形成覆盖层。 覆盖层包括与含氮化物层不同的材料。

    High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure
    24.
    发明申请
    High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure 有权
    用于bce器件结构的Taos上的源极 - 漏极电极的高选择性湿式图案化

    公开(公告)号：US20140264155A1

    公开(公告)日：2014-09-18

    申请号：US14132383

    申请日：2013-12-18

    Applicant: Intermolecular Inc.

    Inventor： Jeroen Van Duren ,  Zhi-Wen Wen Sun

    IPC: H01L21/306

    CPC classification number: H01L21/30604 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32134 ,  H01L21/465 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

    Abstract: Methods and formulations for the selective etching of etch stop layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution. Methods and formulations for the selective etching of molybdenum-based and/or copper-based source/drain electrode layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution.

    Abstract translation: 提出了用于选择性蚀刻沉积在制造TFT基显示器件中的金属基半导体层之上的蚀刻停止层的方法和配方。 制剂基于碱性溶液。 提出了用于选择性蚀刻沉积在制造TFT基显示装置中的金属基半导体层之上的钼基和/或铜基源/漏电极层的方法和配方。 制剂基于碱性溶液。

    Heat Stable SnAl and SnMg Based Dielectrics
    26.
    发明申请
    Heat Stable SnAl and SnMg Based Dielectrics 有权
    热稳定SnAl和SnMg基电介质

    公开(公告)号：US20130189526A1

    公开(公告)日：2013-07-25

    申请号：US13797606

    申请日：2013-03-12

    Applicant: Intermolecular Inc.

    Inventor： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Wen Sun

    IPC: H01B3/10

    CPC classification number: C03C17/366 ,  C03C17/2453 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/3642 ,  C23C14/08 ,  C23C28/32 ,  C23C28/345 ,  H01B3/10

    Abstract: A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

    Abstract translation: 包含锡，氧和铝或镁中的一种优选高于15重量％的铝或镁的透明电介质组合物相对于在高温过程下的外观和光学性质提供了比氧化锡更好的热稳定性。 例如，当在高于500℃的温度下进行热处理时，本发明透明电介质组合物的颜色变化和折射率显着小于具有相当厚度的氧化锡膜的变化。 透明电介质组合物可用于高透光率，低发射率涂层面板，提供热稳定性，使得涂层的光学和结构性能如可见透射率，IR反射率，微观形态特性，颜色外观和 涂层和加热处理产品的雾度特性。

    Methods and apparatuses for patterned low emissivity panels
    27.
    发明授权
    Methods and apparatuses for patterned low emissivity panels 有权
    图案化低辐射面板的方法和装置

    公开(公告)号：US09297938B2

    公开(公告)日：2016-03-29

    申请号：US13715528

    申请日：2012-12-14

    Applicant: Intermolecular Inc.

    Inventor： Minh Huu Le ,  Brent Boyce ,  Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Zhi-Wen Wen Sun

    IPC: G02B5/20 ,  F21V9/04

    CPC classification number: G02B5/208

    Abstract: A method for making low emissivity panels, comprising forming a patterned layer on a transparent substrate. The patterned layers can offer different color schemes or different decorative appearance styles for the coated panels, or can offer gradable thermal efficiency through the patterned layers.

    Abstract translation: 一种制造低辐射面板的方法，包括在透明基底上形成图案层。 图案化的层可以为涂覆的面板提供不同的配色方案或不同的装饰外观样式，或者可以通过图案化层提供可分级的热效率。

    Heat Stable SnAl and SnMg Based Dielectrics
    30.
    发明申请
    Heat Stable SnAl and SnMg Based Dielectrics 有权
    热稳定SnAl和SnMg基电介质

    公开(公告)号：US20140287254A1

    公开(公告)日：2014-09-25

    申请号：US14299341

    申请日：2014-06-09

    Applicant: Intermolecular Inc. ,  Guardian Industries Corp. (Auburn Hills, MI, US)

    Inventor： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Wen Sun

    IPC: C03C17/36 ,  C23C28/00 ,  H01B3/10

    CPC classification number: C03C17/366 ,  C03C17/2453 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/3642 ,  C23C14/08 ,  C23C28/32 ,  C23C28/345 ,  H01B3/10

    Abstract: A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

    Abstract translation: 包含锡，氧和铝或镁中的一种优选高于15重量％的铝或镁的透明电介质组合物相对于在高温过程下的外观和光学性质提供了比氧化锡更好的热稳定性。 例如，当在高于500℃的温度下进行热处理时，本发明透明电介质组合物的颜色变化和折射率显着小于具有相当厚度的氧化锡膜的变化。 透明电介质组合物可用于高透光率，低发射率涂层面板，提供热稳定性，使得涂层的光学和结构性能如可见透射率，IR反射率，微观形态特性，颜色外观和 涂层和加热处理产品的雾度特性。

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