公开(公告)号：US09245848B2

公开(公告)日：2016-01-26

申请号：US14488712

申请日：2014-09-17

Applicant: Intermolecular, Inc.

Inventor： Anh Duong ,  Tony Chiang ,  Zachary M. Fresco ,  Nitin Kumar ,  Chi-I Lang ,  Jinhong Tong ,  Anna Tsizelmon

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  C09D129/04

CPC classification number: H01L23/5329 ,  C09D129/04 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

公开(公告)号：US08871860B2

公开(公告)日：2014-10-28

申请号：US13971613

申请日：2013-08-20

Applicant: Intermolecular, Inc.

Inventor： Anh Duong ,  Tony Chiang ,  Zachary M. Fresco ,  Nitin Kumar ,  Chi-I Lang ,  Jinhong Tong ,  Anna Tsizelmon

IPC: H01L21/02 ,  H01L21/768 ,  C09D129/04 ,  H01L21/3105

CPC classification number: H01L23/5329 ,  C09D129/04 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

Abstract translation: 提出了修改图案化半导体衬底的方法，包括：提供包括电介质区域和导电区域的图案化半导体衬底表面; 以及将两亲表面改性剂施加到所述电介质区域以改变所述电介质区域。 在一些实施例中，修改电介质区域包括改变电介质区域的润湿角度。 在一些实施例中，改变润湿角度包括使介电区域的表面成为亲水性。 在一些实施方案中，方法还包括将水溶液施加到图案化的半导体衬底表面。 在一些实施例中，导电区域被水溶液选择性地增强。 在一些实施例中，方法还包括提供由低k电介质材料形成的电介质区域。 在一些实施方案中，施加两亲表面改性剂修饰低k电介质区域与随后工艺的相互作用。

公开(公告)号：US20130260508A1

公开(公告)日：2013-10-03

申请号：US13909324

申请日：2013-06-04

Applicant: Intermolecular Inc.

Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jinhong Tong

IPC: H01L45/00

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

公开(公告)号：US09178145B2

公开(公告)日：2015-11-03

申请号：US14264475

申请日：2014-04-29

Applicant: Intermolecular Inc.

Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jinhong Tong

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

公开(公告)号：US20140231704A1

公开(公告)日：2014-08-21

申请号：US14261739

申请日：2014-04-25

Applicant: Intermolecular, Inc.

Inventor： Zhi-Wen Sun ,  Nikhil Kalyankar ,  Nitin Kumar ,  Minh Anh Nguyen ,  Sagar Vijay

IPC: H01L31/0236

CPC classification number: H01L31/02366 ,  C23F1/16 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

Abstract: The present disclosure includes a texture formulation that includes an aliphatic diol, an alkaline compound and water which provides a consistent textured region across a silicon surface suitable for solar cell applications. The current invention describes silicon texturing formulations that include at least one high boiling point additive. The high boiling point additive may be a derivative compound of propylene glycol or a derivative compound of ethylene glycol. Processes for texturing a crystalline silicon substrate using these formulations are also described. Additionally, a combinatorial method of optimizing the textured surface of a crystalline silicon substrate is described.

Abstract translation: 本公开内容包括包含脂族二醇，碱性化合物和水的纹理制剂，其在适于太阳能电池应用的硅表面上提供一致的纹理区域。 本发明描述了包含至少一种高沸点添加剂的硅纹理配方。 高沸点添加剂可以是丙二醇或乙二醇的衍生化合物的衍生化合物。 还描述了使用这些制剂对晶体硅衬底进行纹理化的工艺。 另外，描述了优化结晶硅衬底的纹理表面的组合方法。

公开(公告)号：US20130071982A1

公开(公告)日：2013-03-21

申请号：US13675695

申请日：2012-11-13

Applicant: Intermolecular, Inc.

Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Prashant B. Phatak ,  Jinhong Tong

IPC: H01L45/00

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  G11C2213/52 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US20150001555A1

公开(公告)日：2015-01-01

申请号：US14488712

申请日：2014-09-17

Applicant: Intermolecular, Inc.

Inventor： Anh Duong ,  Tony Chiang ,  Zachary M. Fresco ,  Nitin Kumar ,  Chi-I Lang ,  Jinhong Tong ,  Anna Tsizelmon

IPC: H01L23/532

CPC classification number: H01L23/5329 ,  C09D129/04 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

Abstract translation: 提出了修改图案化半导体衬底的方法，包括：提供包括电介质区域和导电区域的图案化半导体衬底表面; 以及将两亲表面改性剂施加到所述电介质区域以改变所述电介质区域。 在一些实施例中，修改电介质区域包括改变电介质区域的润湿角度。 在一些实施例中，改变润湿角度包括使介电区域的表面成为亲水性。 在一些实施方案中，方法还包括将水溶液施加到图案化的半导体衬底表面。 在一些实施例中，导电区域被水溶液选择性地增强。 在一些实施例中，方法还包括提供由低k电介质材料形成的电介质区域。 在一些实施方案中，施加两亲表面改性剂修饰低k电介质区域与随后工艺的相互作用。

公开(公告)号：US08889479B2

公开(公告)日：2014-11-18

申请号：US13675695

申请日：2012-11-13

Applicant: Intermolecular, Inc.

Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Prashant B. Phatak ,  Jinhong Tong

IPC: H01L21/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  G11C2213/52 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US08575021B2

公开(公告)日：2013-11-05

申请号：US13829290

申请日：2013-03-14

Applicant: Intermolecular, Inc.

Inventor： Thomas R. Boussie ,  Tony P. Chiang ,  Anh Duong ,  Zachary Fresco ,  Nitin Kumar ,  Chi-I Lang ,  Sandra G. Malhotra ,  Jinhong Tong

IPC: H01L21/31 ,  H01L21/312 ,  H01L21/32

CPC classification number: H01L21/02112 ,  H01L21/02123 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76834 ,  H01L21/7685

Abstract: Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.

Abstract translation: 描述基板处理方法。 所述方法包括在基底上形成材料层。 所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。 所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。

公开(公告)号：US09099582B2

公开(公告)日：2015-08-04

申请号：US14261739

申请日：2014-04-25

Applicant: Intermolecular, Inc.

Inventor： Zhi-Wen Sun ,  Nikhil Kalyankar ,  Nitin Kumar ,  Minh Anh Nguyen ,  Sagar Vijay

IPC: C09K13/02 ,  H01L31/0236 ,  C23F1/16

CPC classification number: H01L31/02366 ,  C23F1/16 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

Abstract: The present disclosure includes a texture formulation that includes an aliphatic diol, an alkaline compound and water which provides a consistent textured region across a silicon surface suitable for solar cell applications. The current invention describes silicon texturing formulations that include at least one high boiling point additive. The high boiling point additive may be a derivative compound of propylene glycol or a derivative compound of ethylene glycol. Processes for texturing a crystalline silicon substrate using these formulations are also described. Additionally, a combinatorial method of optimizing the textured surface of a crystalline silicon substrate is described.

Abstract translation: 本公开内容包括包含脂族二醇，碱性化合物和水的纹理制剂，其在适于太阳能电池应用的硅表面上提供一致的纹理区域。 本发明描述了包含至少一种高沸点添加剂的硅纹理配方。 高沸点添加剂可以是丙二醇或乙二醇的衍生化合物的衍生化合物。 还描述了使用这些制剂对晶体硅衬底进行纹理化的工艺。 另外，描述了优化结晶硅衬底的纹理表面的组合方法。