公开(公告)号：US10580971B2

公开(公告)日：2020-03-03

申请号：US15892979

申请日：2018-02-09

Applicant: International Business Machines Corporation ,  Industrial Technology Research Institute

Inventor： Guohan Hu ,  Cheng-Wei Chien

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  G11C19/08 ,  H01L43/12 ,  G11B5/33

Abstract: A method includes depositing a magnetic track layer on a seed layer, depositing an alloy layer on the magnetic track layer, depositing a tunnel barrier layer on the alloy layer, depositing a pinning layer on the tunnel barrier layer, depositing a synthetic antiferromagnetic layer spacer on the pinning layer, depositing a pinned layer on the synthetic antiferromagnetic spacer layer and depositing an antiferromagnetic layer on the pinned layer, and another method includes depositing an antiferromagnetic layer on a seed layer, depositing a pinned layer on the antiferromagnetic layer, depositing a synthetic antiferromagnetic layer spacer on the pinned layer, depositing a pinning layer on the synthetic antiferromagnetic layer spacer, depositing a tunnel barrier layer on the pinning layer, depositing an alloy layer on the tunnel barrier layer and depositing a magnetic track layer on alloy layer.

公开(公告)号：US20200058845A1

公开(公告)日：2020-02-20

申请号：US15999229

申请日：2018-08-16

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel Worledge

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16

Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer has higher magnetic damping (greater than 0.01) as compared with the first magnetic free layer. Such a multilayered magnetic free layer structure substantially reduces the switching current needed to reorient the magnetization of the magnetic free layers. The higher magnetic damping value of the second magnetic free layer as compared to the first magnetic free layer improves the switching speed of the magnetic free layers and thus reduces, and even eliminates, write errors.

公开(公告)号：US10553781B2

公开(公告)日：2020-02-04

申请号：US15467609

申请日：2017-03-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen L. Brown ,  Guohan Hu ,  Jonathan Z. Sun ,  Daniel C. Worledge

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

Abstract: A method for forming a memory device that includes providing a free layer of an alloy of cobalt (Co), iron (Fe) and boron (B) overlying a reference layer; and forming metal layer comprising a boron (B) sink composition atop the free layer. Boron (B) may be diffused from the free layer to the metal layer comprising the boron sink composition. At least a portion of the metal layer including the boron (B) sink composition is removed. A metal oxide is formed atop the free layer. The free layer may be a crystalline cobalt and iron alloy. An interface between the metal oxide and free layer can provide perpendicular magnetic anisotropy character.

公开(公告)号：US10468455B2

公开(公告)日：2019-11-05

申请号：US15096864

申请日：2016-04-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SAMSUNG ELECTRONICS, CO., LTD.

Inventor： Guohan Hu ,  Younghyun Kim ,  Jeong-Heon Park ,  Daniel Worledge

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Double magnetic tunnel junctions and methods of forming the same include a bottom reference layer having a first fixed magnetization and a first thickness. A first tunnel barrier is formed on the bottom reference layer. A free layer is formed on the first tunnel barrier and has a changeable magnetization. A second tunnel barrier is formed on the free layer. A top reference layer is formed on the second tunnel barrier and has a second fixed magnetization that is opposite to the first fixed magnetization and a second thickness that is significantly smaller than the first thickness.

公开(公告)号：US10332576B2

公开(公告)日：2019-06-25

申请号：US15616283

申请日：2017-06-07

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: G11C11/16 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.

公开(公告)号：US10294561B2

公开(公告)日：2019-05-21

申请号：US15911950

申请日：2018-03-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: C23C16/06 ,  C23C14/02 ,  C23C14/14 ,  C23C16/02 ,  C23C18/16 ,  C23C18/50 ,  C23C18/31

Abstract: A method for forming metal on a dielectric includes forming a seed layer on a surface including a reactant element. A first metal layer is formed on the seed layer wherein the first metal layer wets the seed layer. A second metal layer is formed on the first metal layer wherein the second metal layer wets the first metal layer. Diffuse the reactant element of the seed layer into the first metal layer by annealing to convert the first metal layer to a dielectric layer.

公开(公告)号：US20180358066A1

公开(公告)日：2018-12-13

申请号：US15616297

申请日：2017-06-07

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Jeong-Heon Park ,  Daniel C. Worledge

IPC: G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.

公开(公告)号：US20180358065A1

公开(公告)日：2018-12-13

申请号：US15616283

申请日：2017-06-07

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.

公开(公告)号：US20180226576A1

公开(公告)日：2018-08-09

申请号：US15945220

申请日：2018-04-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method of making a spin-torque transfer magnetic random access memory device (STT MRAM) device includes forming a tunnel barrier layer on a reference layer; forming a free layer on the tunnel barrier layer, the free layer comprising a cobalt iron boron (CoFeB) alloy layer and an iron (Fe) layer; and performing a sputtering process to form a metal oxide layer on the Fe layer.

公开(公告)号：US20180195168A1

公开(公告)日：2018-07-12

申请号：US15911950

申请日：2018-03-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: C23C16/06 ,  C23C18/31 ,  C23C14/02 ,  C23C14/14 ,  C23C16/02

CPC classification number: C23C16/06 ,  C23C14/024 ,  C23C14/14 ,  C23C16/0272 ,  C23C18/1689 ,  C23C18/1692 ,  C23C18/31 ,  C23C18/50

Abstract: A method for forming metal on a dielectric includes forming a seed layer on a surface including a reactant element. A first metal layer is formed on the seed layer wherein the first metal layer wets the seed layer. A second metal layer is formed on the first metal layer wherein the second metal layer wets the first metal layer. Diffuse the reactant element of the seed layer into the first metal layer by annealing to convert the first metal layer to a dielectric layer.