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    Single-sided liner PCM cell for 3D crossbar PCM memory
    21.
    发明授权
    Single-sided liner PCM cell for 3D crossbar PCM memory 有权

    公开(公告)号：US10707417B1

    公开(公告)日：2020-07-07

    申请号：US16401706

    申请日：2019-05-02

    Applicant: International Business Machines Corporation

    Inventor： Robert L. Bruce ,  Matthew Joseph BrightSky ,  SangBum Kim

    IPC: H01L45/00 ,  H01L27/24

    Abstract: A cross-point memory array and method for manufacturing. The memory array includes a plurality of first conductive line structures formed in a dielectric material layer; a plurality of memory elements, each memory element including a fill-in phase change memory (PCM) cell, and an access device enabling read or write access to said memory PCM structure; a plurality of second conductive line structures, the plurality of second conductive structures perpendicularly oriented relative to the plurality of first conductive structures. An individual memory element of the plurality of memory elements is conductively connected at a respective intersection between a first conductive line structure and a second conductive line structure. Each phase change memory (PCM) cell of a memory element at an intersection having a sub-lithographic conductive tuning liner disposed on only one sidewall of the PCM cell. The manufacturing maintains a minimal number of masking and processing steps.

    METAL NITRIDE KEYHOLE OR SPACER PHASE CHANGE MEMORY CELL STRUCTURES
    23.
    发明申请
    METAL NITRIDE KEYHOLE OR SPACER PHASE CHANGE MEMORY CELL STRUCTURES 有权
    金属氮化物键或间隔相变记忆细胞结构

    公开(公告)号：US20150243884A1

    公开(公告)日：2015-08-27

    申请号：US14633264

    申请日：2015-02-27

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Matthew Joseph BrightSky ,  SangBum Kim ,  Chung Hon Lam ,  Norma Edith Sosa Cortes

    IPC: H01L45/00

    CPC classification number: H01L45/124 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1683

    Abstract: Non-volatile memory cell having small programming power and a reduced resistance drift are provided. In one embodiment of the present application, a non-volatile memory cell is provided that includes a layer of dielectric material that has a via opening that exposes a surface of a bottom electrode. A metal nitride spacer is located along a bottom portion of each sidewall surface of the layer of dielectric material and in the via opening. A phase change material structure is present in the via opening and contacting a top portion of each sidewall surface of the layer of dielectric material and a topmost surface of each metal nitride spacer. A top electrode is located on a topmost surface of the phase change material structure.

    Abstract translation: 提供具有小编程功率和降低的电阻漂移的非易失性存储单元。 在本申请的一个实施例中，提供了一种非易失性存储单元，其包括具有暴露底部电极的表面的通路孔的电介质材料层。 金属氮化物间隔物沿电介质材料层的每个侧壁表面的底部和通孔开口中定位。 相变材料结构存在于通孔开口中，并与介电材料层的每个侧壁表面的顶部部分和每个金属氮化物间隔物的最上表面接触。 顶部电极位于相变材料结构的最上表面上。

    REACTIVATION OF A DEPOSITED METAL LINER
    29.
    发明申请
    REACTIVATION OF A DEPOSITED METAL LINER 有权

    公开(公告)号：US20220310912A1

    公开(公告)日：2022-09-29

    申请号：US17213283

    申请日：2021-03-26

    Applicant: International Business Machines Corporation

    Inventor： ROBERT L. BRUCE ,  Cheng-Wei Cheng ,  Matthew Joseph BrightSky

    IPC: H01L45/00

    Abstract: Aspects of the present invention provide a semiconductor structure for a phase change memory device that includes a heater element on a bottom electrode that is surrounded by a dielectric material. The phase change memory device includes a metal nitride liner over the heater element, where the metal liner is oxide-free with a desired electrical resistance. The phase change memory device includes a phase change material is over the heater element and the dielectric material and a top electrode is over the phase change material.

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