公开(公告)号：US20160064509A1

公开(公告)日：2016-03-03

申请号：US14926858

申请日：2015-10-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Donald Francis Canaperi ,  Alfred Grill ,  Sanjay C. Mehta ,  Son Van Nguyen ,  Deepika Priyadarshini ,  Hosadurga Shobha ,  Matthew T. Shoudy

IPC: H01L29/51 ,  H01L29/423

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02299 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/42364 ,  H01L29/4983 ,  H01L29/511 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

公开(公告)号：US20160047038A1

公开(公告)日：2016-02-18

申请号：US14926684

申请日：2015-10-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Donald Francis Canaperi ,  Alfred Grill ,  Sanjay C. Mehta ,  Son Van Nguyen ,  Deepika Priyadarshini ,  Hosadurga Shobha ,  Matthew T. Shoudy

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02299 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/42364 ,  H01L29/4983 ,  H01L29/511 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.