公开(公告)号：US20230171114A1

公开(公告)日：2023-06-01

申请号：US17537605

申请日：2021-11-30

Applicant: International Business Machines Corporation

Inventor： Dallas Lea ,  Yann Mignot ,  Marc A. Bergendahl ,  Alex Joseph Varghese ,  Sean Teehan ,  Andrew M. Greene ,  Matthew T. Shoudy

IPC: H04L9/32 ,  H03K3/03 ,  H03H7/06 ,  H03H7/01 ,  H03K3/037

CPC classification number: H04L9/3278 ,  H03K3/0315 ,  H03H7/06 ,  H03H7/0161 ,  H03K3/037

Abstract: A physical unclonable function (PUF) device includes a ring oscillator, a plurality of band-pass filters, a demultiplexer, and a latch. The ring oscillator generates a frequency signal. Each passive band-pass filter performs filtering on the frequency signal to pass the frequency signal or block the frequency signal. The demultiplexer receives a set of challenge bits and delivers the frequency signal to a selected passive band-pass filter among the plurality of passive band-passed filters based on the challenge bit. The latch outputs a response bit in response to the filtering performed by the selected passive band-pass filter.

公开(公告)号：US20210098292A1

公开(公告)日：2021-04-01

申请号：US16588057

申请日：2019-09-30

Applicant: International Business Machines Corporation

Inventor： Son Nguyen ,  Takeshi Nogami ,  Thomas Jasper Haigh, JR. ,  Cornelius Brown Peethala ,  Matthew T. Shoudy

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02

Abstract: A method includes forming a metallic interconnect structure on a semiconductor substrate where the metallic interconnect structure comprises a plurality of metal lines with adjacent metal lines separated by a gap therebetween. The method further includes selectively depositing a first low-k dielectric material onto the semiconductor substrate and onto exposed surfaces of the metal lines of the metal interconnect structure to form a barrier on at least the metal lines. The barrier is configured to minimize oxidation and diffusion of metal of the metal lines. The method also includes depositing a flowable second low-k dielectric material onto the semiconductor structure to form a dielectric layer encapsulating the barrier and the metallic interconnect structure.

公开(公告)号：US20230200265A1

公开(公告)日：2023-06-22

申请号：US17552429

申请日：2021-12-16

Applicant: International Business Machines Corporation

Inventor： Kevin W. Brew ,  Injo Ok ,  Sanjay C. Mehta ,  Matthew T. Shoudy ,  Nicole Saulnier ,  Iqbal Rashid Saraf

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/06 ,  H01L45/145 ,  H01L45/1675 ,  H01L45/1691 ,  H01L45/1253 ,  H01L45/1608 ,  H01L45/1683 ,  H01L27/2463

Abstract: A phase change memory structure including a bottom electrode; a top electrode; a first phase change material between the bottom electrode and the top electrode; a first dielectric surrounding the first phase change material; a second dielectric surrounding the top electrode, the second dielectric having selective adhesion to a metal as compared to the first phase change material; a first metal feature contacting the bottom electrode; and a second metal feature contacting the top electrode.

公开(公告)号：US11164776B2

公开(公告)日：2021-11-02

申请号：US16588057

申请日：2019-09-30

Applicant: International Business Machines Corporation

Inventor： Son Nguyen ,  Takeshi Nogami ,  Thomas Jasper Haigh, Jr. ,  Cornelius Brown Peethala ,  Matthew T. Shoudy

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L23/522

Abstract: A method includes forming a metallic interconnect structure on a semiconductor substrate where the metallic interconnect structure comprises a plurality of metal lines with adjacent metal lines separated by a gap therebetween. The method further includes selectively depositing a first low-k dielectric material onto the semiconductor substrate and onto exposed surfaces of the metal lines of the metallic interconnect structure to form a barrier on at least the metal lines. The barrier is configured to minimize oxidation and diffusion of metal of the metal lines. The method also includes depositing a flowable second low-k dielectric material onto the semiconductor substrate to form a dielectric layer encapsulating the barrier and the metallic interconnect structure.

公开(公告)号：US20150287593A1

公开(公告)日：2015-10-08

申请号：US14247559

申请日：2014-04-08

Applicant: International Business Machines Corporation

Inventor： Donald Francis Canaperi ,  Alfred Grill ,  Sanjay C. Mehta ,  Son Van Nguyen ,  Deepika Priyadarshini ,  Hosadurga Shobha ,  Matthew T. Shoudy

IPC: H01L21/02 ,  H01L29/51 ,  H01L23/532

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02299 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/42364 ,  H01L29/4983 ,  H01L29/511 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

Abstract translation: 本发明的实施例提供无氢介电膜和制造方法。 化学气相沉积工艺（PECVD，热CVD，SACVD，HDP CVD和PE等）使用无氢前体，如四异氰酸酯硅烷和无氢反应物，如氮，氧（O 2 / O 3）和一氧化二氮 热ALD）以产生无氢介电膜。 在一些实施例中，存在具有各种材料的子层的多层电介质膜，例如氧化硅，氮化硅和氮氧化硅。 在实施方案中，无氢反应物可以包括四异氰酸酯硅烷，以及这些无H气体的无氢气体，包括但不限于N 2，O 2，O 3，N 2 O，CO 2，CO及其组合。 等离子体可用于增强TICS和其他无H气体之间的反应。 可以在膜沉积期间控制等离子体以在膜的每个子层内实现可变密度。

公开(公告)号：US10903111B2

公开(公告)日：2021-01-26

申请号：US16359442

申请日：2019-03-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Alex Joseph Varghese ,  Marc A. Bergendahl ,  Andrew M. Greene ,  Dallas Lea ,  Matthew T. Shoudy ,  Yann Mignot ,  Ekmini A. De Silva ,  Gangadhara Raja Muthinti

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/768

Abstract: Semiconductor devices and methods for forming semiconductor devices include opening at least one contact via through a sacrificial material down to contacts. Sides of the at least one contact via are lined by selectively depositing a barrier on the sacrificial material, the barrier extending along sidewalls of the at least one contact via from a top surface of the sacrificial material down to a bottom surface of the sacrificial material proximal to the contacts such that the contacts remain exposed. A conductive material is deposited in the at least one contact via down to the contacts to form stacked contacts having the hard mask on sides thereof. The sacrificial material is removed.

公开(公告)号：US09558934B2

公开(公告)日：2017-01-31

申请号：US14925372

申请日：2015-10-28

Applicant: International Business Machines Corporation

Inventor： Donald Francis Canaperi ,  Alfred Grill ,  Sanjay C. Mehta ,  Son Van Nguyen ,  Deepika Priyadarshini ,  Hosadurga Shobha ,  Matthew T. Shoudy

IPC: H01L21/469 ,  H01L21/02 ,  H01L23/532 ,  H01L29/51 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L23/522 ,  H01L23/528 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L23/485

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02299 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/42364 ,  H01L29/4983 ,  H01L29/511 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

公开(公告)号：US09312224B1

公开(公告)日：2016-04-12

申请号：US14567537

申请日：2014-12-11

Applicant: International Business Machines Corporation

Inventor： Donald F. Canaperi ,  Alfred Grill ,  Thomas J. Haigh ,  Son V. Nguyen ,  Takeshi Nogami ,  Deepika Priyadarshini ,  Hosadurga Shobha ,  Matthew T. Shoudy

IPC: H01L23/58 ,  H01L23/532 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L23/5329 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A porous low k dielectric material containing atoms of at least Si, C, N and H (C and/or O may also be present) is used to provide an interconnect structure having reduced BEOL capacitance and resistance. The porous low k dielectric material is used as an interconnect dielectric material in which at least one interconnect metal-containing structure is embedded therein. The porous low k dielectric material has metal diffusion barrier properties due to the presence of nitrogen as an elemental constituent of the porous low k dielectric material. As such, the porous low k dielectric material can eliminate the need of a diffusion barrier liner, or reduce the thickness of the diffusion barrier liner that is typically formed between an interconnect dielectric material and the embedded interconnect metal structure.

Abstract translation: 使用含有至少Si，C，N和H（C和/或O的原子）的多孔低k介电材料（C和/或O也可以存在），以提供具有降低的BEOL电容和电阻的互连结构。 多孔低k电介质材料用作其中嵌入至少一个互连金属的结构的互连电介质材料。 多孔低k介电材料由于存在作为多孔低k电介质材料的元素成分的氮，具有金属扩散阻挡性能。 因此，多孔低k电介质材料可以消除对扩散阻挡衬垫的需要，或减小通常在互连电介质材料和嵌入式互连金属结构之间形成的扩散阻挡衬里的厚度。

公开(公告)号：US20160064218A1

公开(公告)日：2016-03-03

申请号：US14925372

申请日：2015-10-28

Applicant: International Business Machines Corporation

Inventor： Donald Francis Canaperi ,  Alfred Grill ,  Sanjay Mehta ,  Son Van Nguyen ,  Deepika Priyadarshini ,  Hosadurga Shobha ,  Matthew T. Shoudy

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02299 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/42364 ,  H01L29/4983 ,  H01L29/511 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

公开(公告)号：US10923401B2

公开(公告)日：2021-02-16

申请号：US16172205

申请日：2018-10-26

Applicant: International Business Machines Corporation

Inventor： Andrew Greene ,  Marc Bergendahl ,  Ekmini A. De Silva ,  Alex Joseph Varghese ,  Yann Mignot ,  Matthew T. Shoudy ,  Gangadhara Raja Muthinti ,  Dallas Lea

IPC: H01L21/8234 ,  H01L21/3205 ,  H01L29/66 ,  H01L21/3213

Abstract: Embodiments of the present invention are directed to techniques for providing a gate cut critical dimension (CD) shrink and active gate defect healing using selective deposition. The selective silicon on silicon deposition described herein effectively shrinks the gate cut CD to below lithographic limits and repairs any neighboring active gate damage resulting from a processing window misalignment by refilling the inadvertently removed sacrificial material. In a non-limiting embodiment of the invention, a sacrificial gate is formed over a shallow trench isolation region. A portion of the sacrificial gate is removed to expose a surface of the shallow trench isolation region. A semiconductor material is selectively deposited on exposed sidewalls of the sacrificial gate. A gate cut dielectric is formed on a portion of the shallow trench isolation between sidewalls of the semiconductor material.