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公开(公告)号：US20210335682A1
公开(公告)日：2021-10-28
申请号：US17366870
申请日：2021-07-02
Applicant: Infineon Technologies AG
Inventor： Alexander Roth , Olaf Hohlfeld
IPC: H01L23/24 , H01L23/053 , H01L21/56 , H01L23/29
Abstract: A method is disclosed for producing a power semiconductor module that includes a substrate, at least one semiconductor body, a connecting element and a contact element. The method includes: arranging the substrate in a housing having walls; at least partly filling a capacity formed by the walls of the housing and the substrate with an encapsulation material; hardening the encapsulation material to form a hard encapsulation; and closing the housing, wherein the contact element extends from the connecting element through an interior of the housing and through an opening in a cover of the housing to an outside of the housing in a direction perpendicular to a first surface of a first metallization layer of the substrate.
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公开(公告)号：US20210183804A1
公开(公告)日：2021-06-17
申请号：US17118008
申请日：2020-12-10
Applicant: Infineon Technologies AG
Inventor： Alexander Heinrich , Alexander Roth , Catharina Wille
Abstract: A solder material may include nickel and tin. The nickel may include first and second amounts of particles. A sum of the particle amounts is a total amount of nickel or less. The first amount is between 5 at % and 60 at % of the total amount of nickel. The second amount is between 10 at % and 95 at % of the total amount of nickel. The particles of the first amount have a first size distribution, the particles of the second amount have a second size distribution, 30% to 70% of the first amount have a particle size in a range of about 5 μm around a particle size the highest number of particles have according to the first size distribution, and 30% to 70% of the second amount have a particle size in a range of about 5 μm around a particle size the highest number of particles have according to the second size distribution.
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公开(公告)号：US20210080320A1
公开(公告)日：2021-03-18
申请号：US17017763
申请日：2020-09-11
Applicant: Infineon Technologies AG
Inventor： Alexander Roth
Abstract: An optocoupler is provided and which includes a side-emitting electromagnetic radiation source configured to emit electromagnetic radiation at a side wall, and an electromagnetic radiation detector configured to detect at least part of the emitted electromagnetic radiation.
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公开(公告)号：US10759714B2
公开(公告)日：2020-09-01
申请号：US15720462
申请日：2017-09-29
Applicant: Infineon Technologies AG
Inventor： Alexander Roth
Abstract: A method for producing a metal-ceramic substrate includes attaching a metal layer to a surface side of a ceramic layer, the metal layer being structured into a plurality of metallization regions respectively separated from one another by at least one trench-shaped intermediate space to form conductive paths and/or connective surfaces and/or contact surfaces. The method further includes filling the at least one trench-shaped intermediate space with an electrically insulating filler material, and covering first edges of the metallization regions facing and adjoining the surface side of the ceramic layer in the at least one trench-shaped intermediate space, as well as at least one second edge of the metallization regions facing away from the surface side of the ceramic layer in the at least one trench-shaped intermediate space, by the electrically insulating filler material.
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公开(公告)号：US20190237372A1
公开(公告)日：2019-08-01
申请号：US16260834
申请日：2019-01-29
Applicant: Infineon Technologies AG
Inventor： Alexander Roth , Olaf Hohlfeld
IPC: H01L23/24 , H01L23/053 , H01L23/29 , H01L21/56
CPC classification number: H01L23/24 , H01L21/54 , H01L21/56 , H01L23/053 , H01L23/295 , H01L23/562 , H01L24/29 , H01L24/32 , H01L2224/291 , H01L2224/29139 , H01L2224/32225 , H01L2224/8384 , H01L2224/83851 , H01L2924/13055 , H01L2924/13062 , H01L2924/13064 , H01L2924/13091 , H01L2924/16151 , H01L2924/16251 , H01L2924/1815 , H01L2924/014 , H01L2924/00014
Abstract: A power semiconductor module arrangement includes a substrate arranged in a housing. The substrate includes a first metallization layer arranged on a first side of a dielectric insulation layer and a second metallization layer arranged on a second side of the dielectric insulation layer. At least one semiconductor body is mounted on a first surface of the first metallization layer facing away from the dielectric insulation layer. A connecting element is arranged on and electrically connected to the first surface. A contact element is inserted into and electrically connected to the connecting element, and extends from the connecting element through an interior of the housing and through an opening in the cover of the housing to an outside of the housing in a direction perpendicular to the first surface. A hard encapsulation is arranged adjacent to the first metallization layer and at least partly fills the inside of the housing.
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Patent Agency Ranking
公开(公告)号：US10206279B2
公开(公告)日：2019-02-12
申请号：US15450813
申请日：2017-03-06
Applicant: Infineon Technologies AG
Inventor： Alexander Roth
Abstract: A substrate includes a ceramic layer, a metal layer fixed in a planar manner on a surface side of the ceramic layer and a cutout arranged in an edge region of the metal layer. The cutout in the edge region codes information. A multiple substrate having a plurality of these substrates is also provided, as is a method for producing the substrate.
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公开(公告)号：US20180093927A1
公开(公告)日：2018-04-05
申请号：US15720462
申请日：2017-09-29
Applicant: Infineon Technologies AG
Inventor： Alexander Roth
Abstract: A method for producing a metal-ceramic substrate includes attaching a metal layer to a surface side of a ceramic layer, the metal layer being structured into a plurality of metallization regions respectively separated from one another by at least one trench-shaped intermediate space to form conductive paths and/or connective surfaces and/or contact surfaces. The method further includes filling the at least one trench-shaped intermediate space with an electrically insulating filler material, and covering first edges of the metallization regions facing and adjoining the surface side of the ceramic layer in the at least one trench-shaped intermediate space, as well as at least one second edge of the metallization regions facing away from the surface side of the ceramic layer in the at least one trench-shaped intermediate space, by the electrically insulating filler material.
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公开(公告)号：US20230352462A1
公开(公告)日：2023-11-02
申请号：US18141497
申请日：2023-05-01
Applicant: Infineon Technologies AG
Inventor： Alexander Roth
IPC: H01L25/16 , H01L23/31 , H01L23/15 , H01L23/00 , H01L23/498
CPC classification number: H01L25/16 , H01L23/3121 , H01L23/15 , H01L24/32 , H01L24/83 , H01L24/29 , H01L23/49811 , H01L2224/32245 , H01L2224/83447 , H01L2224/29147 , H01L2224/48137 , H01L2224/48245 , H01L24/48 , H01L2224/73265 , H01L24/73
Abstract: A semiconductor package including a ceramic plate, a first conductive layer disposed on the ceramic plate, the first conductive layer comprising a first portion and a second portion, a semiconductor transistor die disposed above the first portion of the first conductive layer, an electrical connector disposed between the semiconductor transistor die and the first portion of the first conductive layer, a semiconductor logic die disposed on the second portion of the first conductive layer, and an encapsulant covering at least in part the ceramic plate, the first conductive layer, the semiconductor transistor die and the semiconductor logic die.
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公开(公告)号：US20230095753A1
公开(公告)日：2023-03-30
申请号：US18075559
申请日：2022-12-06
Applicant: Infineon Technologies AG
Inventor： Alexander Roth
IPC: H01L21/48 , C04B35/645 , C04B37/02 , H05K3/40 , C04B41/00 , C04B41/51 , C04B41/88 , H01L23/15 , H01L23/373 , H01L23/498
Abstract: A method for producing a metal-ceramic substrate with a plurality of electrically conductive vias includes: attaching a first metal layer in a planar manner to a first surface side of a ceramic layer; after attaching the first metal layer, introducing a copper hydroxide or copper acetate brine into a plurality of holes in the ceramic layer delimiting a via, to form an assembly; converting the copper hydroxide or copper acetate brine into copper oxide; subjecting the assembly to a high-temperature step above 500° C. in which the copper oxide forms a copper body in the plurality of holes; and after converting the copper hydroxide or copper acetate brine into the copper oxide, attaching a second metal layer in a planar manner to a second surface side of the ceramic layer opposite the first surface side. The copper body produces an electrically conductive connection between the first and the second metal layers.
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公开(公告)号：US11552042B2
公开(公告)日：2023-01-10
申请号：US17118008
申请日：2020-12-10
Applicant: Infineon Technologies AG
Inventor： Alexander Heinrich , Alexander Roth , Catharina Wille
IPC: H01L23/48 , H01L21/00 , H01L23/00 , B23K35/30 , B23K35/02 , H01L23/495 , H01L23/31 , H01L21/56 , B22F1/052 , B23K101/40
Abstract: A solder material may include nickel and tin. The nickel may include first and second amounts of particles. A sum of the particle amounts is a total amount of nickel or less. The first amount is between 5 at % and 60 at % of the total amount of nickel. The second amount is between 10 at % and 95 at % of the total amount of nickel. The particles of the first amount have a first size distribution, the particles of the second amount have a second size distribution, 30% to 70% of the first amount have a particle size in a range of about 5 μm around a particle size the highest number of particles have according to the first size distribution, and 30% to 70% of the second amount have a particle size in a range of about 5 μm around a particle size the highest number of particles have according to the second size distribution.
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