公开(公告)号：US10950690B2

公开(公告)日：2021-03-16

申请号：US16431337

申请日：2019-06-04

Applicant: Infineon Technologies AG

Inventor： Frank Dieter Pfirsch ,  Thomas Basler

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/739 ,  H01L29/866 ,  H01L29/74 ,  H01L29/78 ,  H01L25/18 ,  H01L29/08

Abstract: A power electronic arrangement includes a semiconductor switch structure configured to assume a forward conducting state. A steady-state current carrying capability of the semiconductor switch structure in the forward conducting state is characterized by a nominal current. The semiconductor switch structure is configured to conduct, in the forward conducting state, at least a part of a forward current in a forward current mode of the power electronic arrangement. A diode structure electrically connected in antiparallel to the semiconductor switch structure is configured to conduct at least a part of a reverse current in a reverse mode of the power electronic arrangement. A thyristor structure electrically connected in antiparallel to the semiconductor switch structure has a forward breakover voltage lower than a diode on-state voltage of the diode structure at a critical diode current value, the critical diode current value amounting to at most five times the nominal current.

公开(公告)号：US20200185906A1

公开(公告)日：2020-06-11

申请号：US16791742

申请日：2020-02-14

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Thomas Basler ,  Hans-Joachim Schulze

IPC: H02H3/20 ,  H02H7/122 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H02M1/00 ,  H02M7/48 ,  H01L29/78 ,  H02M7/44 ,  H02M3/135 ,  H01L29/739 ,  H01L29/417 ,  H01L27/02 ,  H01L23/528

Abstract: A power inverter includes a bridge circuit including a first half-bridge and a second half-bridge, each half-bridge including a high-side device and a low-side device, and a gate driver circuit connected with each gate of the high-side device and low-side power device of the first and second half-bridges and operable to provide each gate with a respective voltage to control operation of the respective power device. The gate driver is operable to provide a first voltage which is higher than a first threshold voltage of the respective power device, and a second voltage which is higher than a surge threshold of the respective power device. The surge threshold is higher than the first threshold and defines the onset of a surge current operation area of the respective power device at which the power device becomes conducts a surge current that is larger than the rated current of the device.

公开(公告)号：US10651165B2

公开(公告)日：2020-05-12

申请号：US14971677

申请日：2015-12-16

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Roman Baburske ,  Thomas Basler ,  Philip Christoph Brandt ,  Maria Cotorogea

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L29/739 ,  H01L29/861 ,  H01L29/40 ,  H03K17/082

Abstract: A semiconductor device includes a semiconductor region having charge carriers of a first conductivity type, a transistor cell in the semiconductor region, and a semiconductor channel region in the transistor cell and having a first doping concentration of charge carriers of a second conductivity type. A semiconductor auxiliary region in the semiconductor region has a second doping concentration of charge carriers of the second conductivity type, which is at least 30% higher than the first doping concentration. A pn-junction between the semiconductor auxiliary region and the semiconductor region is positioned as deep or deeper in the semiconductor region as a pn-junction between the semiconductor channel region and the semiconductor region. The semiconductor auxiliary region is positioned closer to the semiconductor channel region than any other semiconductor region having charge carriers of the second conductivity type and that forms a further pn-junction with the semiconductor region.

公开(公告)号：US10404250B2

公开(公告)日：2019-09-03

申请号：US15921893

申请日：2018-03-15

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Roman Baburske ,  Johannes Georg Laven ,  Franz-Josef Niedernostheide ,  Hans-Joachim Schulze

IPC: H03K17/567 ,  H01L27/06 ,  H01L29/16 ,  H01L29/78 ,  H03K17/12 ,  H01L27/088 ,  H01L29/165 ,  H01L29/739 ,  H01L29/778 ,  H01L29/808 ,  H03K17/687

Abstract: Transistor devices are described that include a first transistor and a second transistor coupled in parallel between a first terminal and a second terminal. The second transistor is based on a wide bandgap semiconductor material. The second transistor has a breakthrough voltage lower than a breakthrough voltage of the first transistor over a predetermined operating range. The predetermined operating range comprises at least an operating range for which the transistor device is specified.

公开(公告)号：US10333387B2

公开(公告)日：2019-06-25

申请号：US15331548

申请日：2016-10-21

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Roman Baburske ,  Johannes Georg Laven

IPC: H02H9/00 ,  H02M1/32 ,  H01L23/60 ,  H01L25/18 ,  H01L29/06 ,  H01L29/16 ,  H01L29/739 ,  H01L29/868 ,  H01L29/872 ,  H01L29/861 ,  H03K17/0814 ,  H03K17/12 ,  H03K17/74

Abstract: An electric assembly includes a semiconductor switching device with a maximum breakdown voltage rating across two load terminals in an off-state. A clamping diode is electrically connected to the two load terminals and parallel to the switching device. A semiconductor body of the clamping diode is made of silicon carbide. An avalanche voltage of the clamping diode is lower than the maximum breakdown voltage rating of the switching device.

公开(公告)号：US20170040431A1

公开(公告)日：2017-02-09

申请号：US15229828

申请日：2016-08-05

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Joachim Mahler ,  Hans-Joachim Schulze

IPC: H01L29/45 ,  H01L29/08 ,  H01L29/861 ,  H01L29/43

CPC classification number: H01L29/861 ,  H01L29/0619 ,  H01L29/08 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/456 ,  H01L29/47 ,  H01L29/872

Abstract: A semiconductor device includes at least one highly doped region of an electrical device arrangement formed in a semiconductor substrate and a contact structure including an NTC (negative temperature coefficient of resistance) portion arranged adjacent to the at least one highly doped region at a front side surface of the semiconductor substrate. The NTC portion includes a negative temperature coefficient of resistance material.

Abstract translation: 半导体器件包括形成在半导体衬底中的电子器件布置的至少一个高度掺杂区域和包括在前侧表面上与所述至少一个高掺杂区域相邻布置的NTC（负电阻温度系数）部分的接触结构 的半导体衬底。 NTC部分包括电阻材料的负温度系数。

公开(公告)号：US12266694B2

公开(公告)日：2025-04-01

申请号：US18398823

申请日：2023-12-28

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Thomas Basler ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Michael Hell ,  Jens Peter Konrath ,  Shiqin Niu ,  Dethard Peters ,  Konrad Schraml ,  Bernd Leonhard Zippelius

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

Abstract: A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.

公开(公告)号：US20240136406A1

公开(公告)日：2024-04-25

申请号：US18398823

申请日：2023-12-28

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Thomas Basler ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Michael Hell ,  Jens Peter Konrath ,  Shiqin Niu ,  Dethard Peters ,  Konrad Schraml ,  Bernd Leonhard Zippelius

IPC: H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/1608 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/7813

Abstract: A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.

公开(公告)号：US20240113026A1

公开(公告)日：2024-04-04

申请号：US18526127

申请日：2023-12-01

Applicant: Infineon Technologies AG

Inventor： Edward Fürgut ,  Ravi Keshav Joshi ,  Thomas Basler ,  Martin Gruber ,  Jochen Hilsenbeck ,  Wolfgang Scholz

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/00 ,  H01L29/16 ,  H01L29/45

CPC classification number: H01L23/53238 ,  H01L21/7685 ,  H01L24/45 ,  H01L29/1608 ,  H01L29/45 ,  H01L2224/05172 ,  H01L2224/05179 ,  H01L2224/05181 ,  H01L2224/05672 ,  H01L2224/05679 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147

Abstract: A silicon carbide device includes a silicon carbide substrate, a contact layer located on the silicon carbide substrate and including nickel and silicon, a barrier layer structure including titanium and tungsten, and a metallization layer comprising copper, wherein the contact layer is located between the silicon carbide substrate and at least a part of the barrier layer structure, wherein the barrier layer structure is located between the silicon carbide substrate and the metallization layer, wherein the metallization layer is configured as a contact pad of the silicon carbide device.

公开(公告)号：US11742391B2

公开(公告)日：2023-08-29

申请号：US17163955

申请日：2021-02-01

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Hans-Joachim Schulze ,  Ralf Siemieniec

IPC: H01L29/06 ,  H01L29/861 ,  H01L29/78 ,  H01L29/872 ,  H01L29/16 ,  H01L29/66 ,  H01L29/167 ,  H01L29/32 ,  H01L29/08 ,  H01L29/417

CPC classification number: H01L29/1608 ,  H01L29/0603 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/167 ,  H01L29/32 ,  H01L29/66068 ,  H01L29/7805 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872 ,  H01L29/41766

Abstract: A semiconductor component includes a semiconductor component, including: a merged PiN Schottky (MPS) diode structure in a SiC semiconductor body having a drift zone of a first conductivity type; an injection region of a second conductivity type adjoining a first surface of the SiC semiconductor body; a contact structure at the first surface, the contact structure forming a Schottky contact with the drift zone and electrically contacting the injection region; and a zone of the first conductivity type formed between the injection region and a second surface of the SiC semiconductor body, the second surface being situated opposite the first surface. The zone is at a maximal distance of 1 μm from the injection region of the second conductivity type.