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公开(公告)号：US08220140B1
公开(公告)日：2012-07-17
申请号：US12880785
申请日：2010-09-13
申请人： Lei Wang , Luc Ving Chung
发明人： Lei Wang , Luc Ving Chung
CPC分类号： G11B5/105 , G11B2005/0021 , H01L23/544 , H01L24/16 , H01L24/81 , H01L2223/5442 , H01L2223/54426 , H01L2223/54473 , H01L2223/54486 , H01L2224/0401 , H01L2224/05166 , H01L2224/05171 , H01L2224/05181 , H01L2224/05655 , H01L2224/05669 , H01L2224/05679 , H01L2224/05684 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/8112 , H01L2224/8113 , H01L2224/81132 , H01L2224/81141 , H01L2224/81193 , H01L2924/01029 , H01L2924/00014 , H01L2924/014
摘要： A system for performing bonding of a first substrate including a first plurality of solder pads to a second substrate including a second plurality of solder pads comprises a first alignment mark set and a first plurality of dots on the first substrate. The system further comprises a second alignment mark set and a second plurality of dots on the second substrate. The second plurality of dots are configured to interlock and form an interlocking key with the first plurality of dots. The first alignment mark set is aligned with the second alignment mark set corresponding to the first and second plurality of dots being aligned and the first and second plurality of solder pads being aligned. The first and second plurality of dots are configured to remain substantially solid during a reflow of the first plurality of solder pads.
摘要翻译： 用于执行包括第一多个焊盘的第一衬底的结合到包括第二多个焊料焊盘的第二衬底的系统包括第一衬底上的第一对准标记组和第一多个点。 该系统还包括第二对准标记组和第二衬底上的第二多个点。 第二多个点被配置为与第一多个点互锁并形成互锁键。 第一对准标记组与对应于第一和第二多个点对准的第二对准标记组对准，并且第一和第二多个焊盘对准。 第一和第二多个点被配置为在第一多个焊盘的回流期间保持基本上固体。
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公开(公告)号：US20080269623A1
公开(公告)日：2008-10-30
申请号：US11741593
申请日：2007-04-27
申请人： David A. Ruben
发明人： David A. Ruben
IPC分类号： A61B5/0215 , C22C27/02
CPC分类号： A61B5/0215 , A61B2562/028 , H01L24/34 , H01L24/37 , H01L24/45 , H01L2224/05624 , H01L2224/05638 , H01L2224/05666 , H01L2224/0567 , H01L2224/05672 , H01L2224/05679 , H01L2224/371 , H01L2224/37166 , H01L2224/37169 , H01L2224/37179 , H01L2224/37181 , H01L2224/37599 , H01L2224/45 , H01L2224/45014 , H01L2224/451 , H01L2224/84214 , H01L2224/84801 , H01L2224/85399 , H01L2224/8592 , H01L2924/00014 , H01L2924/14 , H01L2924/15787 , H01L2924/00 , H01L2924/01072 , H01L2224/45015 , H01L2924/207 , H01L2224/43
摘要： The present invention is directed to an interconnect for an implantable medical device. The interconnect includes a pad and a first layer introduced over the pad. At least one of the pad or the first layer comprise a negative coefficient of thermal expansion (CTE) material.
摘要翻译： 本发明涉及一种用于可植入医疗装置的互连件。 互连包括焊盘和引导到焊盘上的第一层。 衬垫或第一层中的至少一个包括负的热膨胀系数（CTE）材料。
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公开(公告)号：US11869840B2
公开(公告)日：2024-01-09
申请号：US17752224
申请日：2022-05-24
发明人： Ralf Siemieniec , Dethard Peters , Roland Rupp
IPC分类号： H01L23/532 , H01L21/768 , H01L23/00 , H01L29/45 , H01L29/16
CPC分类号： H01L23/53238 , H01L21/7685 , H01L24/45 , H01L29/1608 , H01L29/45 , H01L2224/05172 , H01L2224/05179 , H01L2224/05181 , H01L2224/05672 , H01L2224/05679 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147
摘要： A power semiconductor device includes a semiconductor substrate having a wide bandgap semiconductor material and a first surface, an insulation layer above the first surface of the semiconductor substrate, the insulation layer including at least one opening extending through the insulation layer in a vertical direction, a front metallization above the insulation layer with the insulation layer being interposed between the front metallization and the first surface of the semiconductor substrate, and a metal connection arranged in the opening of the insulation layer and electrically conductively connecting the front metallization with the semiconductor substrate; wherein the front metallization includes at least one layer that is a metal or a metal alloy having a higher melting temperature than an intrinsic temperature of the wide bandgap semiconductor material of the semiconductor substrate.
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4.发明授权公开(公告)号：US08763235B1
公开(公告)日：2014-07-01
申请号：US13525731
申请日：2012-06-18
申请人： Lei Wang , Luc Ving Chung
发明人： Lei Wang , Luc Ving Chung
CPC分类号： G11B5/105 , G11B2005/0021 , H01L23/544 , H01L24/16 , H01L24/81 , H01L2223/5442 , H01L2223/54426 , H01L2223/54473 , H01L2223/54486 , H01L2224/0401 , H01L2224/05166 , H01L2224/05171 , H01L2224/05181 , H01L2224/05655 , H01L2224/05669 , H01L2224/05679 , H01L2224/05684 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/8112 , H01L2224/8113 , H01L2224/81132 , H01L2224/81141 , H01L2224/81193 , H01L2924/01029 , H01L2924/00014 , H01L2924/014
摘要： A method for bonding a first substrate to a second substrate is described. The first substrate includes a first plurality of solder pads, a first alignment mark set, and a first plurality of dots. The second substrate includes a second plurality of solder pads, a second alignment mark set, and a second plurality of dots configured to interlock with the first plurality of dots. The method includes aligning the first alignment mark set with the second alignment mark set. The first alignment mark sets being aligned corresponds to the dots and the solder pads being aligned. The method also includes locking the first plurality of dots with the second plurality of dots to form an interlocking key. The method also includes reflowing at least one of the first and second pluralities of solder pads. The dots remain substantially solid during the reflow.
摘要翻译： 描述了将第一衬底接合到第二衬底的方法。 第一基板包括第一多个焊盘，第一对准标记组和第一多个点。 第二基板包括第二多个焊盘，第二对准标记组和被配置为与第一多个点互锁的第二多个点。 该方法包括使第一对准标记组与第二对准标记组对齐。 对准的第一对准标记组对应于点并且焊盘对齐。 该方法还包括用第二多个点锁定第一多个点以形成互锁密钥。 该方法还包括回流第一和第二多个焊盘中的至少一个。 在回流期间，点保持基本上固体。
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公开(公告)号：US20120305962A1
公开(公告)日：2012-12-06
申请号：US13412024
申请日：2012-03-05
申请人： Sunghee WON , Youngsu Chun
发明人： Sunghee WON , Youngsu Chun
CPC分类号： H01L33/62 , F21K9/27 , F21Y2113/13 , F21Y2115/10 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0753 , H01L2224/05609 , H01L2224/05623 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/05671 , H01L2224/05676 , H01L2224/05679 , H01L2224/0568 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/4848 , H01L2224/48499 , H01L2224/48997 , H01L2224/4911 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/181 , H01L2924/19107 , H01L2933/0066 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/48455
摘要： A light emitting device package is disclosed. The light emitting device package includes a light emitting device disposed on a first lead frame, the light emitting device having an electrode pad on an upper surface thereof, a first wire to electrically interconnect a second lead frame spaced apart from the first lead frame and the electrode pad, and a first bonding ball disposed on the second lead frame, the first bonding ball spaced apart from a first contact point, which is in contact with the first wire and the second lead frame, wherein the first bonding ball is disposed between the first wire and the second lead frame to electrically interconnect the first wire and the second lead frame.
摘要翻译： 公开了一种发光器件封装。 发光器件封装包括设置在第一引线框架上的发光器件，所述发光器件在其上表面上具有电极焊盘，第一引线将与第一引线框架间隔开的第二引线框架和 电极焊盘和设置在第二引线框架上的第一焊接球，第一焊接球与第一接触点与第一焊丝和第二引线框架接触的第一接触点间隔开，其中第一接合球设置在 第一引线和第二引线框架，以使第一引线和第二引线框架电互连。
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公开(公告)号：US08492786B2
公开(公告)日：2013-07-23
申请号：US13412024
申请日：2012-03-05
申请人： Sunghee Won , Youngsu Chun
发明人： Sunghee Won , Youngsu Chun
CPC分类号： H01L33/62 , F21K9/27 , F21Y2113/13 , F21Y2115/10 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0753 , H01L2224/05609 , H01L2224/05623 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/05671 , H01L2224/05676 , H01L2224/05679 , H01L2224/0568 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/4848 , H01L2224/48499 , H01L2224/48997 , H01L2224/4911 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/181 , H01L2924/19107 , H01L2933/0066 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/48455
摘要： A light emitting device package is disclosed. The light emitting device package includes a light emitting device disposed on a first lead frame, the light emitting device having an electrode pad on an upper surface thereof, a first wire to electrically interconnect a second lead frame spaced apart from the first lead frame and the electrode pad, and a first bonding ball disposed on the second lead frame, the first bonding ball spaced apart from a first contact point, which is in contact with the first wire and the second lead frame, wherein the first bonding ball is disposed between the first wire and the second lead frame to electrically interconnect the first wire and the second lead frame.
摘要翻译： 公开了一种发光器件封装。 发光器件封装包括设置在第一引线框架上的发光器件，所述发光器件在其上表面上具有电极焊盘，第一引线将与第一引线框架间隔开的第二引线框架和 电极焊盘和设置在第二引线框架上的第一焊接球，第一焊接球与第一接触点与第一焊丝和第二引线框架接触的第一接触点间隔开，其中第一接合球设置在 第一引线和第二引线框架，以使第一引线和第二引线框架电互连。
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公开(公告)号：US20120267784A1
公开(公告)日：2012-10-25
申请号：US13090092
申请日：2011-04-19
申请人： Khalil Hosseini , Manfred Mengel , Joachim Mahler
发明人： Khalil Hosseini , Manfred Mengel , Joachim Mahler
IPC分类号： H01L23/48 , C23C16/06 , B05D1/36 , C23C14/34 , C25D3/56 , C25D3/54 , C23C14/14 , B32B15/02 , B05D7/20 , B82Y30/00
CPC分类号： H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/43 , H01L24/45 , H01L24/73 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05017 , H01L2224/05147 , H01L2224/05166 , H01L2224/05179 , H01L2224/05184 , H01L2224/05558 , H01L2224/05564 , H01L2224/05679 , H01L2224/05681 , H01L2224/06181 , H01L2224/29111 , H01L2224/29179 , H01L2224/32245 , H01L2224/33181 , H01L2224/37147 , H01L2224/43826 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45664 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/4569 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/48879 , H01L2224/48881 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/8592 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/013 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/181 , Y10T428/2938 , H01L2924/01014 , H01L2924/01032 , H01L2924/01031 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device includes a semiconductor chip, a contact pad of the semiconductor chip and a first layer arranged over the contact pad. The first layer includes niobium, tantalum or an alloy including niobium and tantalum.
摘要翻译： 半导体器件包括半导体芯片，半导体芯片的接触焊盘和布置在接触焊盘上的第一层。 第一层包括铌，钽或包括铌和钽的合金。
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公开(公告)号：US06646347B2
公开(公告)日：2003-11-11
申请号：US09998507
申请日：2001-11-30
IPC分类号： H01L2348
CPC分类号： H01L24/12 , H01L23/3171 , H01L23/3192 , H01L23/5329 , H01L24/05 , H01L24/11 , H01L24/48 , H01L2224/03912 , H01L2224/0401 , H01L2224/04042 , H01L2224/05082 , H01L2224/05599 , H01L2224/05609 , H01L2224/05611 , H01L2224/05618 , H01L2224/05623 , H01L2224/05644 , H01L2224/0566 , H01L2224/05664 , H01L2224/05666 , H01L2224/0567 , H01L2224/05671 , H01L2224/05679 , H01L2224/1147 , H01L2224/13099 , H01L2224/1411 , H01L2224/48091 , H01L2224/48463 , H01L2224/85207 , H01L2224/85399 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2224/45099 , H01L2924/00
摘要： In accordance with one embodiment, a stress buffer (40) is formed between a power metal structure (90) and passivation layer (30). The stress buffer (40) reduces the effects of stress imparted upon the passivation layer (30) by the power metal structure (90). In accordance with an alternative embodiment, a power metal structure (130A) is partitioned into segments (1091), whereby electrical continuity is maintained between the segments (1090) by remaining portions of a seed layer (1052) and adhesion/barrier layer (1050). The individual segments (1090) impart a lower peak stress than a comparably sized continuous power metal structure (9).
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公开(公告)号：US08141556B2
公开(公告)日：2012-03-27
申请号：US11741593
申请日：2007-04-27
申请人： David A. Ruben
发明人： David A. Ruben
IPC分类号： A61B19/00
CPC分类号： A61B5/0215 , A61B2562/028 , H01L24/34 , H01L24/37 , H01L24/45 , H01L2224/05624 , H01L2224/05638 , H01L2224/05666 , H01L2224/0567 , H01L2224/05672 , H01L2224/05679 , H01L2224/371 , H01L2224/37166 , H01L2224/37169 , H01L2224/37179 , H01L2224/37181 , H01L2224/37599 , H01L2224/45 , H01L2224/45014 , H01L2224/451 , H01L2224/84214 , H01L2224/84801 , H01L2224/85399 , H01L2224/8592 , H01L2924/00014 , H01L2924/14 , H01L2924/15787 , H01L2924/00 , H01L2924/01072 , H01L2224/45015 , H01L2924/207 , H01L2224/43
摘要： The present invention is directed to an interconnect for an implantable medical device. The interconnect includes a pad and a first layer introduced over the pad. At least one of the pad or the first layer comprise a negative coefficient of thermal expansion (CTE) material.
摘要翻译： 本发明涉及一种用于可植入医疗装置的互连件。 互连包括焊盘和引导到焊盘上的第一层。 衬垫或第一层中的至少一个包括负的热膨胀系数（CTE）材料。
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公开(公告)号：US06888246B2
公开(公告)日：2005-05-03
申请号：US10447457
申请日：2003-05-29
IPC分类号： H01L21/60 , H01L21/768 , H01L23/31 , H01L23/485 , H01L23/532 , H01L23/48 , H01L23/52
CPC分类号： H01L24/12 , H01L23/3171 , H01L23/3192 , H01L23/5329 , H01L24/05 , H01L24/11 , H01L24/48 , H01L2224/03912 , H01L2224/0401 , H01L2224/04042 , H01L2224/05082 , H01L2224/05599 , H01L2224/05609 , H01L2224/05611 , H01L2224/05618 , H01L2224/05623 , H01L2224/05644 , H01L2224/0566 , H01L2224/05664 , H01L2224/05666 , H01L2224/0567 , H01L2224/05671 , H01L2224/05679 , H01L2224/1147 , H01L2224/13099 , H01L2224/1411 , H01L2224/48091 , H01L2224/48463 , H01L2224/85207 , H01L2224/85399 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2224/45099 , H01L2924/00
摘要： In accordance with one embodiment, a stress buffer (40) is formed between a power metal structure (90) and passivation layer (30). The stress buffer (40) reduces the effects of stress imparted upon the passivation layer (30) by the power metal structure (90). In accordance with an alternative embodiment, a power metal structure (130A) is partitioned into segments (1091), whereby electrical continuity is maintained between the segments (1090) by remaining portions of a seed layer (1052) and adhesion/barrier layer (1050). The individual segments (1090) impart a lower peak stress than a comparably sized continuous power metal structure (9).
摘要翻译： 根据一个实施例，在功率金属结构（90）和钝化层（30）之间形成应力缓冲器（40）。 应力缓冲器（40）减少由功率金属结构（90）施加在钝化层（30）上的应力的影响。 根据替代实施例，功率金属结构（130A）被分割成段（1091），由此通过种子层（1052）和粘附/阻挡层（1052）的剩余部分在段（1090）之间保持电连续性 1050）。 单个段（1090）赋予比相对大小的连续功率金属结构（9）更低的峰值应力。
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