Sector-aligned memory accessible to programmable logic fabric of programmable logic device

    公开(公告)号:US11257526B2

    公开(公告)日:2022-02-22

    申请号:US15868304

    申请日:2018-01-11

    申请人: Intel Corporation

    摘要: An integrated circuit device may include programmable logic fabric on a first integrated circuit die and sector-aligned memory on a second integrated circuit die to enable large amounts of data to be rapidly processed by a sector of programmable logic of the programmable logic device. The programmable logic fabric may include a first and second sectors. The first sector may be programmed with a circuit design that operates on a first set of data. The sector-aligned memory may include a first sector of sector-aligned memory directly accessible by the first sector of programmable logic fabric and a second sector of sector-aligned memory directly accessible by the second sector of programmable logic fabric. The first sector of sector-aligned memory may store the first set of data.