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公开(公告)号:US20210074333A1
公开(公告)日:2021-03-11
申请号:US17086220
申请日:2020-10-30
Applicant: Intel Corporation
Inventor: Chong J. ZHAO , James A. McCALL , Robert J. FRIAR , Yidnekachew S. MEKONNEN , San K. CHHAY
Abstract: Examples described herein relate to a pattern of pins where the signals assigned to the pins are arranged in a manner to reduce cross-talk. In some examples, a socket substrate includes a first group of pins that includes a first group of data (DQ) pins separated by at least two Voltage Source Supply (VSS) pins from a second group of DQ pins and a third group of DQ pins separated by at least two VSS pins from a fourth group of DQ pins. In some examples, data strobe signal (DQS) pins are positioned in a column between the first and third groups of DQ pins and the second and fourth groups of DQ pins. In some examples, a second group of pins includes a first group of DQ pins separated by at least two VSS pins from a second group of DQ pins and a third group of DQ pins separated by at least two VSS pins from a fourth group of DQ pins. In some examples, the second group of pins, DQS pins are positioned between the first and third groups of DQ pins and the second and fourth groups of DQ pins.
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22.
公开(公告)号:US20190139592A1
公开(公告)日:2019-05-09
申请号:US16177284
申请日:2018-10-31
Applicant: Intel Corporation
Inventor: Kuljit S. BAINS , George VERGIS , James A. McCALL , Ge Chang
IPC: G11C11/4074 , G11C11/408 , G11C7/10 , G11C8/06 , G06F3/06 , G06F13/16
Abstract: Techniques and mechanisms for providing termination for a plurality of chips of a memory device. In an embodiment, a memory device is an integrated circuit (IC) package which includes a command and address bus and a plurality of memory chips each coupled thereto. Of the plurality of memory chips, only a first memory chip is operable to selectively provide termination to the command and address bus. Of the respective on-die termination control circuits of the plurality of memory chips, only the on-die termination control circuit of the first memory chip is coupled via any termination control signal line to any input/output (I/O) contact of the IC package. In another embodiment, the plurality of memory chips are configured in a series with one another, and wherein the first memory chip is located at an end of the series
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公开(公告)号:US20190096468A1
公开(公告)日:2019-03-28
申请号:US15716485
申请日:2017-09-26
Applicant: Intel Corporation
Inventor: James A. McCALL , Christopher P. MOZAK , Christopher E. COX , Yan FU , Robert J. FRIAR , Hsien-Pao YANG
IPC: G11C11/4072 , G06F3/06
Abstract: A method is described. The method includes configuring first register space to establish ODT values of a data strobe signal trace of a DDR data bus. The method also includes configuring second register space to establish ODT values of a data signal trace of the DDR data bus. The ODT values for the data strobe signal trace are different than the ODT values for the data signal trace. The ODT values for the data strobe signal do not change when consecutive write operations of the DDR bus write to different ranks of a same DIMM.
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公开(公告)号:US20190043796A1
公开(公告)日:2019-02-07
申请号:US16017710
申请日:2018-06-25
Applicant: Intel Corporation
Inventor: Zhen ZHOU , Jun LIAO , Xiang LI , Kevin STONE , Tom DU , Tae-Young YANG , Ling ZHENG , James A. McCALL
Abstract: An apparatus is described. The apparatus includes an electro-mechanical interface having angled signal interconnects, wherein, the angling of the signal interconnects is to reduce noise coupling between the angled signal interconnects.
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公开(公告)号:US20190042500A1
公开(公告)日:2019-02-07
申请号:US16017515
申请日:2018-06-25
Applicant: Intel Corporation
Inventor: Rajat AGARWAL , Bill NALE , Chong J. ZHAO , James A. McCALL , George VERGIS
Abstract: A DIMM is described. The DIMM includes circuitry to multiplex write data to different groups of memory chips on the DIMM during a same burst write sequence.
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公开(公告)号:US20240237193A1
公开(公告)日:2024-07-11
申请号:US18618075
申请日:2024-03-27
Applicant: Intel Corporation
Inventor: Yi HUANG , Xiaoning YE , Kai XIAO , James A. McCALL , Yanjie ZHU
CPC classification number: H05K1/0253 , H05K1/117 , H05K1/141 , H05K2201/10189
Abstract: An apparatus is described. The apparatus includes a memory module. The memory module includes a first printed circuit board having a first transmission line. The first printed circuit board has memory chips disposed thereon. The memory module includes a second printed board having a second transmission line that is coupled to the first transmission line to form a signal path through the first and second printed circuit boards. The second printed circuit board has greater flexibility than the first printed circuit board. The memory module includes a connector to align an I/O that is coupled to the second transmission line with a corresponding I/O that is associated with a motherboard that is to send and/or receive a signal to and/or from the signal path.
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公开(公告)号:US20230044892A1
公开(公告)日:2023-02-09
申请号:US17969518
申请日:2022-10-19
Applicant: Intel Corporation
Inventor: Xiang LI , Saravanan SETHURAMAN , George VERGIS , James A. McCALL
Abstract: According to examples, a memory module with module rows of conductive contacts can enable multiple memory channels to be connected to the same memory module. In one example, a memory module includes a printed circuit board (PCB) having a first face, a second face, and an edge to be received by a connector. The memory module includes a plurality of memory chips on at least one of the first and second faces of the PCB. The memory module includes two or more rows of conductive contacts on each of the first and second faces of the PCB, the two rows including a first row of conductive contacts proximate to the edge of the PCB to be received by the connector, and a second row of conductive contacts between the first row and a second edge of the PCB opposite to the first edge.
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公开(公告)号:US20220263262A1
公开(公告)日:2022-08-18
申请号:US17737243
申请日:2022-05-05
Applicant: Intel Corporation
Inventor: Landon HANKS , Xiang LI , George VERGIS , James A. McCALL
IPC: H01R13/24 , H01R13/652 , H01R13/04 , H01R12/71
Abstract: Examples described herein relate to a system that includes: a first signal pin and a first ground pin adjacent to the first signal pin. In some examples, the first signal pin comprises a first portion, a second portion, and a third portion. In some examples, the first ground pin comprises a first portion, a second portion, and a third portion, the second portion of the first signal pin comprises a vertical mount, the second portion of the first ground pin comprises a vertical mount, and the second portion of the first signal pin and the second portion of the first ground pin are arranged proximate one another.
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29.
公开(公告)号:US20210335414A1
公开(公告)日:2021-10-28
申请号:US17368732
申请日:2021-07-06
Applicant: Intel Corporation
Inventor: Chong J. ZHAO , James A. McCALL , Shigeki TOMISHIMA , George VERGIS , Kuljit S. BAINS
IPC: G11C11/4093 , G11C11/4096 , G11C11/408 , H01L27/108
Abstract: Techniques to couple a high bandwidth memory device on a silicon substrate and a package substrate are disclosed. Examples include selectively activating input/out (I/O) or command and address (CA) contacts on a bottom side of a logic layer for the high bandwidth device based on a mode of operation. The I/O and CA contacts are for accessing one or more memory devices include in the high bandwidth memory device via one or more data channels.
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公开(公告)号:US20210335393A1
公开(公告)日:2021-10-28
申请号:US17372298
申请日:2021-07-09
Applicant: Intel Corporation
Inventor: Chong J. ZHAO , Shigeki TOMISHIMA , Kuljit S. BAINS , James A. McCALL , Dimitrios ZIAKAS
IPC: G11C5/06
Abstract: An apparatus is described. The apparatus includes a logic chip upon which a stack of memory chips is to be placed. The stack of memory chips and the logic chip to be placed within a same package, wherein, multiple memory chips of the stack of memory chips are divided into fractions, and, multiple internal channels within the package that emanate from the logic chip are to be coupled to respective ones of the fractions. The logic chip has a multiplexer. The multiplexer is to multiplex a single input/output (I/O) channel of the package to the multiple internal channels.
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