TRACE DESIGN TO REDUCE THE CONNECTOR CROSSTALK

    公开(公告)号:US20220418090A1

    公开(公告)日:2022-12-29

    申请号:US17897043

    申请日:2022-08-26

    Abstract: Examples described herein relate to a system that includes: a circuit board comprising a plurality of layers, first and second conductive connections, first and second trace portions, first, second, and third routings, and a via wherein: the first conductive connection is coupled to the first trace portion, the second conductive connection is coupled to the second trace portion, the first routing is formed in a first layer of the plurality of layers, the second routing is formed in a second layer of the plurality of layers, the third routing is formed in the first layer of the plurality of layers, a portion of the first routing overlaps with a portion of the second routing to provide a capacitive region, and the via conductively couples a portion of the second routing overlaps with a portion of the third routing.

    CIRCUIT BOARD TO REDUCE FAR END CROSS TALK

    公开(公告)号:US20220304142A1

    公开(公告)日:2022-09-22

    申请号:US17831774

    申请日:2022-06-03

    Abstract: Examples described herein relate to a system that includes: a circuit board comprising a plurality of layers and at least one conductive connection. In some examples, the at least one conductive connection is connected to a layer of the plurality of layers. In some examples, at least one layer of the plurality of layers comprises a conductive material. In some examples, the at least two layers of the plurality of layers comprise conductive material that extend in an axis towards the at least one conductive connection but do not overlap with the at least one layer of the plurality of layers comprising the conductive material.

    BACK-END MEMORY CHANNEL THAT RESIDES BETWEEN FIRST AND SECOND DIMM SLOTS AND APPLICATIONS THEREOF

    公开(公告)号:US20190042162A1

    公开(公告)日:2019-02-07

    申请号:US16104040

    申请日:2018-08-16

    Abstract: A computing system is described. The computing system includes a memory controller having a double data rate memory interface. The double data rate memory interface has a first memory channel interface and a second memory channel interface. The computing system also includes a first DIMM slot and a second DIMM slot. The computing system also includes a first memory channel coupled to the first memory channel interface and the first DIMM slot, wherein the first memory channel's CA and DQ wires are not coupled to the second DIMM slot. The computing system also includes a second memory channel coupled to the second memory channel interface and the second DIMM slot, wherein the second memory channel's CA and DQ wires are not coupled to the first DIMM slot. The computing system also includes a back end memory channel that is coupled to the first and second DIMM slots.

    UNIDIRECTIONAL COMMAND BUS PHASE DRIFT COMPENSATION

    公开(公告)号:US20220393682A1

    公开(公告)日:2022-12-08

    申请号:US17890500

    申请日:2022-08-18

    Abstract: A system has an unmatched communication architecture for a unidirectional command bus and compensates for drift on the command bus based on data provided on a bidirectional data bus. The memory device has an oscillator to measure drift or an amount of delay for the command bus over a time interval. The memory device can return a value over the data bus to the memory controller based on the delay measured with the oscillator. Based on receiving the value, the memory controller can adjust configuration settings for communication on the command bus.

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