公开(公告)号：US20140124788A1

公开(公告)日：2014-05-08

申请号：US13670269

申请日：2012-11-06

Applicant: INTERMOLECULAR, INC.

Inventor： Philip Kraus ,  Boris Borisov ,  Thai Cheng Chua ,  Sandeep Nijhawan

IPC: H01L21/205 ,  H01L29/205 ,  H01L33/32

CPC classification number: H01L21/0254 ,  C23C16/0227 ,  C23C16/303 ,  C23C16/305 ,  C23C16/409 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45551

Abstract: Chemical vapor deposition (CVD) systems for forming layers on a substrate are disclosed. Embodiments of the system comprise at least two processing chambers that may be linked in a cluster tool. A first processing chamber provides a chamber having a controlled environmental temperature and pressure and containing a first environment for performing CVD on a substrate, and a second environment for contacting the substrate with a plasma; a substrate transport system capable of positioning a substrate for sequential processing in each environment, and a gas control system capable of maintaining isolation. A second processing chamber provides a CVD system. Methods of forming layers on a substrate comprise forming one or more layers in each processing chamber. The systems and methods are suitable for preparing Group III-V, Group II-VI or Group IV thin film devices.

公开(公告)号：US09246062B2

公开(公告)日：2016-01-26

申请号：US14259387

申请日：2014-04-23

Applicant: Intermolecular, Inc.

Inventor： Jianhua Hu ,  Heng Kai Hsu ,  Tong Ju ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

IPC: H01L21/00 ,  H01L33/42 ,  H01L33/32

CPC classification number: H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/483 ,  H01L2933/0016

Abstract: Transparent ohmic contacts to p-GaN and other high-work-function (≧4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.

Abstract translation: 由锡酸锡（例如ZnSnO 3）制造对p-GaN和其它高功函数（≥4.2eV）的半导体的透明欧姆接触。 ZnO和SnO2可以从单独的靶溅射并退火以形成锡酸锌。 可以在1:2和2:1之间的范围内调整Zn：Sn比，以优化特定半导体和感兴趣的波长的带隙，功函数，电导率和透明度。 可以通过使锡酸锌结晶，通过掺入高达5重量％的Al或In或两者来改善电导率。

公开(公告)号：US20130313566A1

公开(公告)日：2013-11-28

申请号：US13957380

申请日：2013-08-01

Applicant: Intermolecular, Inc.

Inventor： Philip A. Kraus ,  Boris Borisov ,  Thai Cheng Chua ,  Sandeep Nijhawan ,  Yoga Saripalli

IPC: H01L21/02

CPC classification number: H01L21/02436 ,  B01J2219/0059 ,  B01J2219/00756 ,  C23C16/303 ,  C23C16/45534 ,  C23C16/45551 ,  C30B25/14 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/0262

Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.

Abstract translation: 描述了使用表面活性剂沉积薄膜的方法和装置。 方法和装置包括沉积过程和系统，其包括多个分离的处理区域，其能够快速重复薄膜的亚单层沉积。 表面活性剂的使用允许在较低温度下沉积具有低表面粗糙度值的高质量外延膜。 使用诸如GaN的III-V族薄膜的沉积作为示例。

公开(公告)号：US20130118404A1

公开(公告)日：2013-05-16

申请号：US13714814

申请日：2012-12-14

Applicant: Intermolecular, Inc.

Inventor： Philip A. Kraus ,  Thai Cheng Chua ,  Sandeep Nijhawan

IPC: H01L21/205

CPC classification number: H01L21/2056 ,  C23C16/303 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45551 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T117/1016

Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.

Abstract translation: 描述了沉积薄膜的方法和装置。 在实施例中，提供了用于外延薄膜形成的系统和方法，包括用于形成二元化合物外延薄膜的系统和方法。 可以使用本发明实施例的方法和系统来形成直接带隙半导体二元化合物外延薄膜，例如GaN，InN和AlN，以及这些化合物的混合合金，例如（In，Ga）N ，（Al，Ga）N，（In，Ga，Al）N。 方法和装置包括能够快速重复薄膜的亚单层沉积的多级沉积工艺和系统。