公开(公告)号：US20140264708A1

公开(公告)日：2014-09-18

申请号：US14034226

申请日：2013-09-23

Applicant: Intermolecular, Inc.

Inventor： Jeroen Van Duren ,  Haifan Liang

IPC: H01L31/18 ,  H01L31/065

CPC classification number: H01L31/18 ,  H01L31/022466 ,  H01L31/0326 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/1832 ,  Y02E10/541 ,  Y02P70/521

Abstract: Optical absorbers, solar cells comprising the absorbers, and methods for making the absorbers are disclosed. The optical absorber comprises a semiconductor layer having a bandgap of between about 1.0 eV and about 1.6 eV disposed on a substrate, wherein the semiconductor comprises two or more earth abundant elements. The bandgap of the optical absorber is graded through the thickness of the layer by partial substitution of at least one grading element from the same group in the periodic table as the at least one of the two or more earth abundant elements.

Abstract translation: 公开了光吸收剂，包含吸收体的太阳能电池和制造吸收体的方法。 光吸收器包括具有位于衬底上的约1.0eV至约1.6eV之间的带隙的半导体层，其中该半导体包括两个或更多个大量丰富的元素。 光吸收体的带隙通过至少一个分级元素从周期表中与两个或更多个地球丰富元素中的至少一个元素相同的基团部分地取代层的厚度。

公开(公告)号：US20140170803A1

公开(公告)日：2014-06-19

申请号：US13716009

申请日：2012-12-14

Applicant: INTERMOLECULAR, INC.

Inventor： Teresa B. Sapirman ,  Philip A. Kraus ,  Sang M. Lee ,  Haifan Liang ,  Jeroen Van Duren

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C14/3464 ,  H01L31/0749 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

Abstract: In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport.

Abstract translation: 在一些实施方案中，通过多个靶的共溅射沉积Cu-In-Ga前体膜。 具体地，共溅射法用于形成包括In的层。 共溅射减少了In组分聚集的趋势，并导致更平滑，更均匀的膜。 在一些实施方案中，一个或多个靶中的Ga浓度为约25原子％至约66原子％。 沉积可以在批次或在线沉积系统中进行。 如果使用在线沉积系统，则衬底通过系统的移动可以是连续的，或者可以遵循衬底传送的“停止和浸泡”方法。

公开(公告)号：US20140110813A1

公开(公告)日：2014-04-24

申请号：US14145028

申请日：2013-12-31

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Jeroen Van Duren

IPC: H01L31/032

CPC classification number: H01L31/0323 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/065 ,  Y02E10/541

Abstract: Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing at least one of Na, Mg, K, or Ca to increase the band gap at the front surface of the absorber layer.

Abstract translation: 描述了用于在具有渐变组成和分级带隙的TFPV装置中形成CIGS吸收层的方法。 描述了利用Ag增加吸收层前表面带隙的方法。 描述了利用Al增加吸收层前表面带隙的方法。 描述了利用Na，Mg，K或Ca中的至少一种来增加吸收层前表面的带隙的方法。

公开(公告)号：US20130309805A1

公开(公告)日：2013-11-21

申请号：US13737127

申请日：2013-01-09

Applicant: INTERMOLECULAR, INC.

Inventor： Haifan Liang ,  Sang Lee ,  Wei Liu ,  Sandeep Nijhawan ,  Jeroen Van Duren

IPC: H01L31/18

CPC classification number: H01L31/065 ,  H01L31/0322 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/541

Abstract: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25-0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

公开(公告)号：US20130309804A1

公开(公告)日：2013-11-21

申请号：US13711860

申请日：2012-12-12

Applicant: INTERMOLECULAR, INC.

Inventor： Haifan Liang ,  Sang Lee ,  Wei Liu ,  Sandeep Nijhawan ,  Jeroen Van Duren

IPC: H01L31/18

CPC classification number: H01L31/065 ,  H01L31/0322 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/541

Abstract: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

Abstract translation: 一种制造高效CIGS太阳能电池的方法，包括从约25原子％至约66原子％之间的Ga浓度的溅射靶中沉积Ga浓度（Ga /（Ga + In）= 0.25-0.66）。 此外，该方法包括与导致高效率的高温退火工艺相结合的高温硒化工艺。

公开(公告)号：US20130143355A1

公开(公告)日：2013-06-06

申请号：US13737846

申请日：2013-01-09

Applicant: INTERMOLECULAR, INC.

Inventor： Jeroen Van Duren ,  Haifan Liang

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/02366 ,  Y02E10/50

Abstract: Methods for increasing the power output of a TFPV solar panel using thin absorber layers comprise techniques for roughening and/or texturing the back contact layer. The techniques comprise roughening the substrate prior to the back contact deposition, embedding particles in sol-gel films formed on the substrate, and forming multicomponent, polycrystalline films that result in a roughened surface after a wet etch step, etc.

Abstract translation: 使用薄吸收层增加TFPV太阳能电池板的功率输出的方法包括用于粗糙化和/或纹理化背面接触层的技术。 这些技术包括在后接触沉积之前使基底粗糙化，将颗粒嵌入形成在基底上的溶胶 - 凝胶膜中，以及形成在湿蚀刻步骤之后导致粗糙化表面的多组分多晶膜等。

公开(公告)号：US09299571B2

公开(公告)日：2016-03-29

申请号：US14134678

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Sang Lee ,  Jeroen Van Duren

IPC: H01L21/00 ,  H01L27/12 ,  H01L21/306 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L21/465 ,  H01L21/70 ,  H01L29/45

CPC classification number: H01L21/30604 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32134 ,  H01L21/465 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A gradient in the composition of at least one of the elements of a metal-based semiconductor layer is introduced as a function of depth through the layer. The gradient(s) influence the current density response of the device at different gate voltages. In some embodiments, the composition of an element (e.g. Ga) is greater at the interface between the metal-based semiconductor layer and the source/drain layers. The shape of the gradient profile is one of linear, stepped, parabolic, exponential, and the like.

Abstract translation: 作为穿过该层的深度的函数，引入金属基半导体层的至少一个元素的组成的梯度。 梯度影响器件在不同栅极电压下的电流密度响应。 在一些实施例中，元件（例如Ga）的组成在金属基半导体层和源极/漏极层之间的界面处较大。 梯度轮廓的形状是直线，阶梯，抛物线，指数等之一。

公开(公告)号：US09112095B2

公开(公告)日：2015-08-18

申请号：US13716009

申请日：2012-12-14

Applicant: Intermolecular, Inc.

Inventor： Teresa B. Sapirman ,  Philip A. Kraus ,  Sang M. Lee ,  Haifan Liang ,  Jeroen Van Duren

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/18 ,  C23C14/3464 ,  H01L31/0749 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

Abstract: In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport.

Abstract translation: 在一些实施方案中，通过多个靶的共溅射沉积Cu-In-Ga前体膜。 具体地，共溅射法用于形成包括In的层。 共溅射减少了In组分聚集的趋势，并导致更平滑，更均匀的膜。 在一些实施方案中，一个或多个靶中的Ga浓度为约25原子％至约66原子％。 沉积可以在批次或在线沉积系统中进行。 如果使用在线沉积系统，则衬底通过系统的移动可以是连续的，或者可以遵循衬底传送的“停止和浸泡”方法。

公开(公告)号：US20150179839A1

公开(公告)日：2015-06-25

申请号：US14138555

申请日：2013-12-23

Applicant: Intermolecular Inc.

Inventor： Jeroen Van Duren ,  Khaled Ahmed ,  Haifan Liang

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0749 ,  H01L31/022425 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: Solar cells and methods for forming a back contact layer for a solar cell are disclosed. The methods comprise depositing a first layer comprising a conductor on a substrate, depositing a second layer on the first layer, the second layer comprising between about 1 nm and about 25 nm of a metal chalcogenide, and forming a third layer operable as an absorber layer on the second layer. The absorber layer can comprise a photoactive semiconductor layer. In some embodiments, the absorber layer comprises a chalcogenide of copper-indium-gallium. In some embodiments, the absorber layer comprises a chalcogenide of copper-zinc-tin. In some embodiments, the absorber layer comprises CdTe. In some embodiments, the metal comprises Mo, W or Ta. In some embodiments, the metal comprises Mo. In some embodiments, the chalcogenide comprises S or Se or a combination thereof.

Abstract translation: 公开了用于形成太阳能电池的背接触层的太阳能电池和方法。 所述方法包括在衬底上沉积包含导体的第一层，在第一层上沉积第二层，第二层包含约1nm至约25nm的金属硫族化物，以及形成可操作为吸收层的第三层 在第二层。 吸收层可以包括光敏半导体层。 在一些实施例中，吸收层包括铜铟镓的硫族化物。 在一些实施方案中，吸收层包含铜 - 锌 - 锡的硫族化物。 在一些实施例中，吸收层包括CdTe。 在一些实施方案中，金属包括Mo，W或Ta。 在一些实施方案中，金属包含Mo。在一些实施方案中，硫族化物包含S或Se或其组合。

公开(公告)号：US08900664B2

公开(公告)日：2014-12-02

申请号：US13727845

申请日：2012-12-27

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Jessica Eid ,  Jeroen Van Duren

IPC: C23C16/00 ,  H01L31/18 ,  H01L31/032 ,  H01L31/0392 ,  H01L31/065 ,  H01L31/0749 ,  H01L21/02

CPC classification number: H01L31/18 ,  H01L21/02551 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/065 ,  H01L31/0749 ,  Y02E10/541

Abstract: A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a system suitable for exposing the precursor to a chalcogen to form a chalcogenide TFPV absorber. One or more Na precursors are used to deposit a Na-containing layer on the precursor film in the system. This method eliminates the use of dedicated equipment and processes for introducing Na to the TFPV absorber.

Abstract translation: 公开了一种用于制造高效CIGS太阳能电池的方法，包括在基板上沉积多组分金属前体膜。 然后将基底插入适于将前体暴露于硫属元素的系统中以形成硫族化物TFPV吸收剂。 一种或多种Na前体用于在系统中的前体膜上沉积含Na层。 该方法消除了将Na引入TFPV吸收器的专用设备和方法的使用。