公开(公告)号：US08735864B2

公开(公告)日：2014-05-27

申请号：US13971620

申请日：2013-08-20

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC: H01L29/02

CPC classification number: H01L45/1608 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2213/15 ,  G11C2213/32 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

Abstract: Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

Abstract translation: 本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。 在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。 电流限制层的电性能被配置为通过在电阻式开关存储元件中增加固定的串联电阻来在逻辑状态编程步骤（即，“设置”和“复位”步骤）期间降低通过可变电阻层的电流 存在于非易失性存储器件中。 在一个实施例中，限流部件包括隧道氮化物，其是限制在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。

公开(公告)号：US20130337606A1

公开(公告)日：2013-12-19

申请号：US13971620

申请日：2013-08-20

Applicant: Intermolecular Inc. ,  SanDisk 3D LLC ,  Kabushiki Kaisha Toshiba

Inventor： Mihir Tendulkar ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC: H01L45/00

CPC classification number: H01L45/1608 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2213/15 ,  G11C2213/32 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

Abstract: Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

Abstract translation: 本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。 在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。 电流限制层的电性能被配置为通过在电阻式开关存储元件中增加固定的串联电阻来在逻辑状态编程步骤（即，“设置”和“复位”步骤）期间降低通过可变电阻层的电流 存在于非易失性存储器件中。 在一个实施例中，限流部件包括隧道氮化物，其是限制在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。

公开(公告)号：US09231203B1

公开(公告)日：2016-01-05

申请号：US14565097

申请日：2014-12-09

Applicant: Intermolecular Inc.

Inventor： Mihir Tendulkar ,  Milind Weling

IPC: H01L21/06 ,  H01L47/00 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L45/00

CPC classification number: H01L45/145 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16

Abstract: Provided are memory cells, such as resistive random access memory (ReRAM) cells, and methods of fabricating such cells. A cell includes an embedded resistor and resistive switching layer connected in series within the embedded resistor. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state. The embedded resistor includes a stoichiometric nitride that has a bandgap of less than 2 eV. The embedded resistor is configured to maintain a substantially constant resistance throughout fabrication and operation of the cell, such as annealing the cell and subjecting the cell to forming and switching signals. The stoichiometric nitride may be one of hafnium nitride, zirconium nitride, or titanium nitride. The embedded resistor may also include a dopant, such as tantalum, niobium, vanadium, tungsten, molybdenum, or chromium.

Abstract translation: 提供了存储单元，例如电阻随机存取存储器（ReRAM）单元，以及制造这样的单元的方法。 单元包括在嵌入式电阻器内串联连接的嵌入式电阻器和电阻开关层。 嵌入式电阻器可防止电阻开关层过多的电流，特别是当电阻式开关层切换到低电阻状态时。 嵌入式电阻器包括具有小于2eV的带隙的化学计量氮化物。 嵌入式电阻器被配置为在电池的整个制造和操作过程中保持基本恒定的电阻，例如退火电池并使电池成形和切换信号。 化学计量氮化物可以是氮化铪，氮化锆或氮化钛之一。 嵌入式电阻器还可以包括掺杂剂，例如钽，铌，钒，钨，钼或铬。

公开(公告)号：US20150188039A1

公开(公告)日：2015-07-02

申请号：US14140755

申请日：2013-12-26

Applicant: Intermolecular Inc.

Inventor： Yun Wang ,  Vidyut Gopal ,  Mihir Tendulkar

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/12 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. The ReRAM cells may include a first layer operable as a bottom electrode and a second layer operable to switch between at least a first resistive state and a second resistive state. The ReRAM cells may include a third layer including a first oxygen getter material and a fourth layer including a metal silicon nitride. The ReRAM cells may further include a fifth layer including a second oxygen getter material. The first oxygen getter material and the second oxygen getter material may be more reactive with oxygen than the metal silicon nitride. A work function of the first oxygen getter material and a work function of the second oxygen getter material may be substantially lower than a work function of the metal silicon nitride. The ReRAM cells may include a sixth layer operable as a top electrode.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元可以包括可操作为底部电极的第一层和可操作以在至少第一电阻状态和第二电阻状态之间切换的第二层。 ReRAM单元可以包括包括第一氧吸气材料的第三层和包括金属氮化硅的第四层。 ReRAM单元还可以包括第五层，其包括第二氧气吸气材料。 第一吸氧剂材料和第二氧气吸气材料可以比金属氮化硅更能反应氧气。 第一吸氧剂材料的功函数和第二吸氧剂材料的功函数可以基本上低于金属氮化硅的功函数。 ReRAM单元可以包括可操作为顶部电极的第六层。

公开(公告)号：US20150184283A1

公开(公告)日：2015-07-02

申请号：US14143358

申请日：2013-12-30

Applicant: Intermolecular Inc.

Inventor： Mihir Tendulkar

IPC: C23C14/34 ,  C23C14/58

CPC classification number: C23C14/5806 ,  C23C14/0641 ,  C23C14/351 ,  C23C14/352 ,  H01L21/32051 ,  H01L21/76858 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L2924/1435

Abstract: Ternary metal nitride layers suitable for thin-film resistors are fabricated by forming constituent layers of complementary components (e.g., binary nitrides of the different metals, or a binary nitride of one metal and a metallic form of the other metal), then annealing the constituent layers to interdiffuse the materials, thus forming the ternary metal nitride. The constituent layers (e.g., 2-5 nm thick) may be sputtered from binary metal nitride targets, from metal targets in a nitrogen-containing ambient, or from metal targets in an inert ambient. Optionally, a nitrogen-containing ambient may also be used for the annealing. The annealing may be 10 seconds to 10 minutes at 500-1000° C. and may also process another component on the same substrate (e.g., activate a diode).

Abstract translation: 适用于薄膜电阻器的三元金属氮化物层通过形成互补部件的构成层（例如，不同金属的二元氮化物或一种金属的二元氮化物和另一种金属的金属形式），然后退火成分 层以相互扩散材料，从而形成三元金属氮化物。 构成层（例如，2-5nm厚）可以从二元金属氮化物靶，从含氮环境中的金属靶或从惰性环境中的金属靶溅射。 任选地，含氮环境也可用于退火。 退火在500-1000℃可以为10秒至10分钟，并且还可以处理相同基板上的另一部件（例如激活二极管）。

公开(公告)号：US20150069319A1

公开(公告)日：2015-03-12

申请号：US14548408

申请日：2014-11-20

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  David Chi

IPC: H01L45/00 ,  H01L27/24 ,  H01L49/02

CPC classification number: H01L45/146 ,  H01L21/28506 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2463 ,  H01L28/24 ,  H01L45/06 ,  H01L45/08 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1641

Abstract: Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

公开(公告)号：US20140357046A1

公开(公告)日：2014-12-04

申请号：US14464171

申请日：2014-08-20

Applicant: Intermolecular Inc.

Inventor： Chien-Lan Hsueh ,  Randall J. Higuchi ,  Mihir Tendulkar

IPC: H01L45/00

CPC classification number: C23C14/345 ,  C23C14/0042 ,  C23C14/0641 ,  C23C14/083 ,  C23C14/225 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a resistive switching layer connected in series with this resistor. The resistor is configured to prevent over-programming of the cell by limiting electrical currents through the resistive switching layer. Unlike the resistive switching layer, which changes its resistance in order to store data, the embedded resistor maintains a substantially constant resistance during operation of the cell. The embedded resistor is formed from tantalum nitride and silicon nitride. The atomic ratio of tantalum and silicon may be specifically selected to yield resistors with desired densities and resistivities as well as ability to remain amorphous when subjected to various annealing conditions. The embedded resistor may also function as a diffusion barrier layer and prevent migration of components between one of the electrodes and the resistive switching layer.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括与该电阻器串联连接的嵌入式电阻器和电阻开关层。 电阻器被配置为通过限制通过电阻式开关层的电流来防止电池的过度编程。 与电阻开关层不同，为了存储数据而改变其电阻，嵌入式电阻器在电池工作期间保持基本恒定的电阻。 嵌入式电阻器由氮化钽和氮化硅形成。 可以特别地选择钽和硅的原子比以产生具有所需密度和电阻率的电阻器以及当经受各种退火条件时保持非晶体的能力。 嵌入式电阻器还可以用作扩散阻挡层并且防止元件在电极和电阻开关层中的一个之间的迁移。

公开(公告)号：US08860002B2

公开(公告)日：2014-10-14

申请号：US13721450

申请日：2012-12-20

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are ReRAM cells, each having at least one interface between an electrode and a resistive switching layers with a maximum field value of less than 0.25. The electrode materials forming such interfaces include tantalum nitrides doped with lanthanum, aluminum, erbium yttrium, or terbium (e.g., TaX(Dopant)YN, where X is at least about 0.95). The electrode materials have low work functions (e.g., less than about 4.5 eV). At the same time, the resistive switching materials have high relative dielectric permittivities (e.g., greater than about 30) and high electron affinities (greater than about for 3.5 eV). Niobium oxide is one example of a suitable resistive switching material. Another electrode interfacing the resistive switching layer may have different characteristics and, in some embodiments, may be an inert electrode.

Abstract translation: 提供的是ReRAM单元，每个单元在电极和电阻切换层之间具有至少一个界面，其最大场值小于0.25。 形成这种界面的电极材料包括掺杂有镧，铝，铒钇或铽的钽氮化物（例如TaX（掺杂剂）YN，其中X为至少约0.95）。 电极材料具有低功函数（例如小于约4.5eV）。 同时，电阻式开关材料具有较高的相对介电常数（例如大于约30）和高电子亲和力（大于3.5eV）。 氧化铌是合适的电阻式开关材料的一个例子。 连接电阻式开关层的另一电极可以具有不同的特性，并且在一些实施例中可以是惰性电极。

公开(公告)号：US08853661B1

公开(公告)日：2014-10-07

申请号：US13835256

申请日：2013-03-15

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  Randall J. Higuchi ,  Chien-Lan Hsueh

IPC: H01L29/02 ,  H01L47/00 ,  H01L27/24 ,  H01L45/00

CPC classification number: H01L45/165 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括串联连接的嵌入式电阻和电阻开关层。 嵌入式电阻器阻止通过电阻开关层的过多电流，特别是当电阻式开关层切换到其低电阻状态时，从而防止过度编程。 嵌入式电阻器包括铝，氮和一种或多种另外的金属（除铝以外）。 控制每个组分的浓度以实现嵌入式电阻器的期望的电阻率和稳定性。 在一些实施例中，电阻率范围为0.1欧姆至40欧姆厘米，并且在施加高达8兆伏特/厘米的电场到嵌入式电阻器时保持基本恒定。 嵌入式电阻器可以由非晶材料制成，并且即使经受典型的退火条件，该材料也可操作以保持非晶态。

公开(公告)号：US20140246640A1

公开(公告)日：2014-09-04

申请号：US13784465

申请日：2013-03-04

Applicant: INTERMOLECULAR INC.

Inventor： Mihir Tendulkar

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L27/224 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616

Abstract: A nonvolatile memory device and method for forming a resistive switching memory element, with improved lifetime and switching performance. A nonvolatile memory element includes resistive switching layer formed between a first and second electrode. The resistive switching layer comprises a metal oxide. One or more electrodes include a dopant material to provide the electrode with enhanced oxygen-blocking properties that maintain and control the oxygen ion content within the memory element contributing to increased device lifetime and performance.

Abstract translation: 一种用于形成电阻式开关存储元件的非易失性存储器件和方法，具有改善的寿命和开关性能​​。 非易失性存储元件包括形成在第一和第二电极之间的电阻式开关层。 电阻开关层包括金属氧化物。 一个或多个电极包括掺杂剂材料，以提供电极具有增强的阻氧性能，其维持和控制存储元件内的氧离子含量有助于增加器件寿命和性能。