公开(公告)号：US11002527B2

公开(公告)日：2021-05-11

申请号：US16750650

申请日：2020-01-23

Applicant: INVENSENSE, INC.

Inventor： Ilya Gurin ,  Leonardo Baldasarre

IPC: G01B7/31 ,  G01B7/305 ,  G01B7/00 ,  H01L21/66 ,  G01D5/241

Abstract: The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

公开(公告)号：US10766764B2

公开(公告)日：2020-09-08

申请号：US16538166

申请日：2019-08-12

Applicant: INVENSENSE, INC.

Inventor： Ilya Gurin ,  Joseph Seeger ,  Matthew Thompson

IPC: B81B3/00 ,  G01P21/00 ,  G01P15/125 ,  G01C19/5719 ,  G01P15/08 ,  G01P15/13 ,  B81C99/00

Abstract: A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.

公开(公告)号：US09828238B2

公开(公告)日：2017-11-28

申请号：US15144046

申请日：2016-05-02

Applicant: InvenSense, Inc.

Inventor： Ilya Gurin

IPC: B81B7/02 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0058 ,  B81B7/0048 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00674

Abstract: In accordance with an example embodiment of this disclosure, a micro-electro-mechanical system (MEMS) device comprises a substrate, a CMOS die, and a MEMS die, each of which comprises a top side and a bottom side. The bottom side of the CMOS die is coupled to the top side of the substrate, and the MEMS die is coupled to the top side of the CMOS die, and there is a cavity positioned between the CMOS die and the substrate. The cavity may be sealed by a sealing substance, and may be filled with a filler substance (e.g., an adhesive) that is different than the sealing substance (e.g., a gaseous or non-gaseous substance). The cavity may be fully or partially surrounded by one or more downward-protruding portions of the CMOS die and/or one or more upward-protruding portions of the substrate.

公开(公告)号：US09625329B2

公开(公告)日：2017-04-18

申请号：US14635205

申请日：2015-03-02

Applicant: InvenSense, Inc.

Inventor： Ilya Gurin ,  Joe Seeger

IPC: G01L1/18 ,  G01D18/00 ,  G01L27/00 ,  G01L1/22

CPC classification number: G01L1/18 ,  G01D18/00 ,  G01L1/183 ,  G01L1/2293 ,  G01L27/002

Abstract: An example system comprises a microelectromechanical system (MEMS) sensor, a strain gauge, and a strain compensation circuit. The MEMS sensor is operable to generate a sensor output signal that corresponds to a sensed condition (e.g., acceleration, orientation, and/or pressure). The strain gauge is operable to generate a strain measurement signal indicative of a strain on the MEMS sensor. The strain compensation circuit is operable to modify the sensor output signal to compensate for the strain based on the strain measurement signal. The strain compensation circuit stores sensor-strain relationship data indicative of a relationship between the sensor output signal and the strain measurement signal. The strain compensation circuit is operable to use the sensor-strain relationship data for the modifying of the sensor output signal. The modification of the sensor output signal comprises one or both of: removal of an offset from the sensor signal, and application of a gain to the sensor signal.

公开(公告)号：US20160258825A1

公开(公告)日：2016-09-08

申请号：US14635205

申请日：2015-03-02

Applicant: InvenSense, Inc.

Inventor： Ilya Gurin ,  Joe Seeger

IPC: G01L1/18 ,  G01D18/00

CPC classification number: G01L1/18 ,  G01D18/00 ,  G01L1/183 ,  G01L1/2293 ,  G01L27/002

Abstract: An example system comprises a microelectromechanical system (MEMS) sensor, a strain gauge, and a strain compensation circuit. The MEMS sensor is operable to generate a sensor output signal that corresponds to a sensed condition (e.g., acceleration, orientation, and/or pressure). The strain gauge is operable to generate a strain measurement signal indicative of a strain on the MEMS sensor. The strain compensation circuit is operable to modify the sensor output signal to compensate for the strain based on the strain measurement signal. The strain compensation circuit stores sensor-strain relationship data indicative of a relationship between the sensor output signal and the strain measurement signal. The strain compensation circuit is operable to use the sensor-strain relationship data for the modifying of the sensor output signal. The modification of the sensor output signal comprises one or both of: removal of an offset from the sensor signal, and application of a gain to the sensor signal.

Abstract translation: 示例系统包括微机电系统（MEMS）传感器，应变计和应变补偿电路。 MEMS传感器可操作以产生对应于感测状态（例如，加速度，取向和/或压力）的传感器输出信号。 应变仪可操作以产生指示MEMS传感器上的应变的应变测量信号。 应变补偿电路可操作以修改传感器输出信号以补偿基于应变测量信号的应变。 应变补偿电路存储表示传感器输出信号和应变测量信号之间的关系的传感器 - 应变关系数据。 应变补偿电路可操作地使用传感器 - 应变关系数据来修改传感器输出信号。 传感器输出信号的修改包括以下一个或两个：从传感器信号中去除偏移，以及对传感器信号应用增益。

公开(公告)号：US20160159640A1

公开(公告)日：2016-06-09

申请号：US14564725

申请日：2014-12-09

Applicant: InvenSense, Inc.

Inventor： Ilya Gurin

IPC: B81B7/00

CPC classification number: B81B7/0058 ,  B81B7/0048 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00674

Abstract: In accordance with an example embodiment of this disclosure, a micro-electromechanical system (MEMS) device comprises a substrate, a CMOS die, and a MEMS die, each of which comprises a top side and a bottom side. The bottom side of the CMOS die is coupled to the top side of the substrate, and the MEMS die is coupled to the top side of the CMOS die, and there is a cavity positioned between the CMOS die and the substrate. The cavity may be sealed by a sealing substance, and may be filled with a filler substance (e.g., an adhesive) that is different than the sealing substance (e.g., a gaseous or non-gaseous substance). The cavity may be fully or partially surrounded by one or more downward-protruding portions of the CMOS die and/or one or more upward-protruding portions of the substrate.

Abstract translation: 根据本公开的示例实施例，微机电系统（MEMS）装置包括基板，CMOS管芯和MEMS管芯，每个管芯包括顶侧和底侧。 CMOS裸片的底侧耦合到衬底的顶侧，并且MEMS管芯耦合到CMOS管芯的顶侧，并且存在位于CMOS管芯和衬底之间的空腔。 空腔可以由密封材料密封，并且可以填充与密封物质（例如气态或非气态物质）不同的填充物质（例如粘合剂）。 空腔可以由CMOS管芯的一个或多个向下突出部分和/或衬底的一个或多个向上突出部分完全或部分地包围。