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    Method for making a reinforced silicon micromechanical part
    2.
    发明授权
    Method for making a reinforced silicon micromechanical part 有权
    制造增强硅微机械部件的方法

    公开(公告)号：US08992784B2

    公开(公告)日：2015-03-31

    申请号：US13386049

    申请日：2010-07-20

    申请人： Nakis Karapatis

    发明人： Nakis Karapatis

    IPC分类号： B81C1/00

    CPC分类号： B81C1/00682 ,  B81B2201/035 ,  B81C1/00674 ,  B81C2201/0178 ,  Y10T29/49986

    摘要： A method of fabricating a reinforced silicon micromechanical part includes: micro-machining the part, or a batch of parts in a silicon wafer; forming a silicon dioxide layer over the entire surface of the part, in one or plural operations, so as to obtain a thickness of silicon dioxide that is at least five times greater than the thickness of native silicon dioxide; and removing the silicon dioxide layer by etching.

    摘要翻译： 制造增强硅微机械部件的方法包括：在硅晶片中对所述部件或一批部件进行微加工; 在一个或多个操作中在整个表面上形成二氧化硅层，以获得比天然二氧化硅的厚度大至少五倍的二氧化硅的厚度; 并通过蚀刻去除二氧化硅层。

    METAL ELASTIC MEMBER, MINIATURE MACHINE, METHOD OF MANUFACTURING MINIATURE MACHINE, SWING CONTROL DEVICE AND SWING CONTROL METHOD
    3.
    发明申请
    METAL ELASTIC MEMBER, MINIATURE MACHINE, METHOD OF MANUFACTURING MINIATURE MACHINE, SWING CONTROL DEVICE AND SWING CONTROL METHOD 有权
    金属弹性件，微型机，制造微型机的方法，摆动控制装置和摆动控制方法

    公开(公告)号：US20140132187A1

    公开(公告)日：2014-05-15

    申请号：US14058814

    申请日：2013-10-21

    申请人： HOKUYO AUTOMATIC CO., LTD.

    发明人： Toshihiro Mori ,  Norihiro Asada ,  Kazuo Takai

    IPC分类号： G02B7/182 ,  H02P25/02 ,  F16F1/14 ,  H02K33/02

    CPC分类号： G02B7/1821 ,  B81B2201/042 ,  B81B2203/0154 ,  B81C1/00674 ,  F16F1/14 ,  G02B26/0833 ,  H02K33/02 ,  H02P25/032

    摘要： A metal elastic member to be used for beams 4 for supporting a movable unit 3 at respective ends with respect to a fixed unit 2 in a miniature machine including at least one movable unit 3, the fixed unit 2 and the beams 4, and capable of swinging the movable unit about an axis P with the beams 4 serving as torsional rotation axes, includes a metal bar 4a having a predetermined length, a fixed unit pad 4b that is provided at a first end of the metal bar 4a and is fixed to the fixed unit 2, and a movable unit pad 4c formed on the other end side of the metal bar 4a and fixed to the movable unit 3. At least the metal bar 4a is molded to have a sectional area of 1 mm2 or less by using a physical or chemical processing method excluding a mechanical processing method and swings the movable unit 3 within a frequency of 150 Hz to 500 Hz.

    摘要翻译： 一种用于在包括至少一个可移动单元3，固定单元2和梁4的微型机器中相对于固定单元2在相应端部处支撑可移动单元3的梁4的金属弹性构件，并且能够 以能够作为扭转轴的梁4围绕轴线P摆动可动单元包括具有预定长度的金属棒4a，固定单元垫4b设置在金属棒4a的第一端并固定到 固定单元2和形成在金属棒4a的另一端侧并固定到可移动单元3的可移动单元垫4c。至少金属棒4a通过使用金属棒4a成型为具有1mm 2以下的截面积 物理或化学处理方法，不包括机械处理方法，并且在150Hz至500Hz的频率内摆动可移动单元3。

    EDGE-REINFORCED MICROMECHANICAL COMPONENT
    4.
    发明申请
    EDGE-REINFORCED MICROMECHANICAL COMPONENT 有权
    边缘增强微机电组件

    公开(公告)号：US20120263909A1

    公开(公告)日：2012-10-18

    申请号：US13445519

    申请日：2012-04-12

    申请人： Peter Gluche ,  Ralph Gretzschel ,  Matthias Wiora

    发明人： Peter Gluche ,  Ralph Gretzschel ,  Matthias Wiora

    IPC分类号： B32B3/08 ,  B32B9/04 ,  B44C1/22

    CPC分类号： B81B3/0075 ,  B81C1/00674 ,  G04B1/145 ,  G04B13/02 ,  G04B15/14 ,  G04B17/063 ,  G04B17/066 ,  G04B31/004 ,  Y10T428/239 ,  Y10T428/24793

    摘要： The present subject matter relates to a micromechanical component having a top face and a bottom face and at least two side faces, and a coating of diamond and/or diamond-like carbon (DLC) which encompasses all the surfaces of the component, wherein on at least one side face, across at least a part of said side face, the coating has a smaller coating thickness than that of the top face and/or bottom face, so that a reinforced area in reference to the at least one side face is produced.

    摘要翻译： 本主题涉及具有顶面和底面以及至少两个侧面的微机械部件，以及包含部件的所有表面的金刚石和/或类金刚石碳（DLC）的涂层，其中在 穿过所述侧面的至少一部分的至少一个侧面，所述涂层具有比所述顶面和/或底面更小的涂层厚度，使得相对于所述至少一个侧面的增强区域为 生产。

    Tungsten coating for improved wear resistance and reliability of microelectromechanical devices
    7.
    发明授权
    Tungsten coating for improved wear resistance and reliability of microelectromechanical devices 有权
    钨涂层，用于改善微机电装置的耐磨性和可靠性

    公开(公告)号：US06290859B1

    公开(公告)日：2001-09-18

    申请号：US09439103

    申请日：1999-11-12

    申请人： James G. Fleming ,  Seethambal S. Mani ,  Jeffry J. Sniegowski ,  Robert S. Blewer

    发明人： James G. Fleming ,  Seethambal S. Mani ,  Jeffry J. Sniegowski ,  Robert S. Blewer

    IPC分类号： H01L2100

    CPC分类号： B81C1/0096 ,  B81B3/0005 ,  B81B2201/035 ,  B81C1/00674 ,  B81C2201/0176 ,  B81C2201/112 ,  H01H2001/0057

    摘要： A process is disclosed whereby a 5-50-nanometer-thick conformal tungsten coating can be formed over exposed semiconductor surfaces (e.g. silicon, germanium or silicon carbide) within a microelectromechanical (MEM) device for improved wear resistance and reliability. The tungsten coating is formed after cleaning the semiconductor surfaces to remove any organic material and oxide film from the surface. A final in situ cleaning step is performed by heating a substrate containing the MEM device to a temperature in the range of 200-600 ° C. in the presence of gaseous nitrogen trifluoride (NF3). The tungsten coating can then be formed by a chemical reaction between the semiconductor surfaces and tungsten hexafluoride (WF6) at an elevated temperature, preferably about 450° C. The tungsten deposition process is self-limiting and covers all exposed semiconductor surfaces including surfaces in close contact. The present invention can be applied to many different types of MEM devices including microrelays, micromirrors and microengines. Additionally, the tungsten wear-resistant coating of the present invention can be used to enhance the hardness, wear resistance, electrical conductivity, optical reflectivity and chemical inertness of one or more semiconductor surfaces within a MEM device.

    摘要翻译： 公开了一种方法，其中可以在微机电（MEM）装置内的暴露的半导体表面（例如硅，锗或碳化硅）上形成5-50纳米厚的共形钨涂层，以改善耐磨性和可靠性。 在清洁半导体表面之后形成钨涂层，以从表面除去任何有机材料和氧化物膜。 通过在含有气态三氟化氮（NF 3）的存在下，将含有MEM装置的基板加热至200-600℃的温度，进行最终的原位清洗步骤。 钨涂层然后可以通过半导体表面和六氟化钨（WF6）之间的化学反应在升高的温度，优选约450℃下形成。钨沉积工艺是自限制的，并且覆盖所有暴露的半导体表面，包括紧密的表面 联系。 本发明可以应用于许多不同类型的MEM装置，包括微型雷达，微镜和微型引擎。 此外，本发明的钨耐磨涂层可用于提高MEM装置内的一个或多个半导体表面的硬度，耐磨性，导电性，光反射率和化学惰性。