RADIATION-SENSITIVE COMPOSITION, AND COMPOUND
    21.
    发明申请
    RADIATION-SENSITIVE COMPOSITION, AND COMPOUND 有权
    辐射敏感组合物和化合物

    公开(公告)号:US20130280658A1

    公开(公告)日:2013-10-24

    申请号:US13901621

    申请日:2013-05-24

    Inventor: Ken MARUYAMA

    Abstract: A radiation-sensitive composition includes a compound represented by a formula (1), and a polymer having a structural unit that includes an acid-labile group. In the formula (1), R1 represents a group having a polar group; n is an integer of 1 to 4, wherein, in a case where R1 is present in a plurality of number, the plurality of R1s are identical or different, and optionally at least two R1s taken together represent a cyclic structure; A represents an alicyclic hydrocarbon group having a valency of (n+1); and M+ represents a monovalent onium cation.

    Abstract translation: 辐射敏感性组合物包括由式(1)表示的化合物和具有包含酸不稳定基团的结构单元的聚合物。 式(1)中,R 1表示具有极性基团的基团。 n为1〜4的整数,其中,R1为多个的情况下,多个R 1相同或不同,并且任选地,至少两个R 1一起表示环状结构。 A表示具有(n + 1)价的脂环族烃基; M +表示单价鎓阳离子。

    POLYMER
    22.
    发明申请
    POLYMER 有权
    聚合物

    公开(公告)号:US20130053526A1

    公开(公告)日:2013-02-28

    申请号:US13659026

    申请日:2012-10-24

    Abstract: A polymer includes a repeating unit shown by a following general formula (1). R1 represents a hydrogen atom, a methyl group, a fluorine atom, or a trifluoromethyl group. R2 represents a substituted or unsubstituted aryl group having 6 to 22 carbon atoms. Y represents a carbon atom. X represents an atomic group that forms an alicyclic hydrocarbon group together with Y.

    Abstract translation: 聚合物包括由以下通式(1)表示的重复单元。 R1表示氢原子,甲基,氟原子或三氟甲基。 R2表示取代或未取代的碳原子数6〜22的芳基。 Y表示碳原子。 X表示与Y一起形成脂环族烃基的原子团。

    PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATES

    公开(公告)号:US20240411228A1

    公开(公告)日:2024-12-12

    申请号:US18699377

    申请日:2022-09-21

    Inventor: Ken MARUYAMA

    Abstract: A production method for a semiconductor substrate includes: performing a vapor deposition of a metal compound or metal directly or indirectly onto a substrate to form a metal-containing resist film; and exposing the metal-containing resist film to light. The metal compound or metal includes an Au atom, a Cr atom, an Ag atom, an In atom, or a combination thereof. The method preferably further includes developing the metal-containing resist film after exposing. The vapor deposition is preferably performed by PVD or CVD. The metal compound preferably includes a metal complex, a metal halide, or an organometal.

    RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMER

    公开(公告)号:US20240377742A1

    公开(公告)日:2024-11-14

    申请号:US18782428

    申请日:2024-07-24

    Inventor: Ken MARUYAMA

    Abstract: A radiation-sensitive resin composition includes: a polymer including a first structural unit represented by formula (1), solubility of the polymer in a developer solution capable of being altered by an acid; and a compound represented by formula (2). R1 represents a hydrogen atom, or the like; R2 represents a group obtained by removing, from a substituted or unsubstituted aliphatic hydrocarbon ring having 3 to 30 ring atoms, two hydrogen atoms; and Ar1 represents a group obtained by removing one hydrogen atom from a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 30 ring atoms. Z represents an acid-labile group; L1 represents *—O—CO— or —O—; Y represents an organic group having 1 to 30 carbon atoms, the organic group not comprising a cyclic acetal structure; A− represents a monovalent anion group; n is an integer of 1 to 5; and X+ represents a monovalent radiation-sensitive onium cation.

    RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD

    公开(公告)号:US20230273519A1

    公开(公告)日:2023-08-31

    申请号:US18024309

    申请日:2021-08-17

    Inventor: Ken MARUYAMA

    CPC classification number: G03F7/038 C08F220/28 G03F7/039

    Abstract: Provided is a radiation-sensitive resin composition capable of exhibiting sensitivity and CDU performance at a sufficient level when a next-generation technology is applied, and a pattern formation method. A radiation-sensitive resin composition containing: a radiation-sensitive acid generating resin comprising a repeating unit A having an acid-dissociable group represented by the following formula (1) and a repeating unit B including an organic acid anion moiety and a sulfonium cation moiety containing an aromatic ring structure having a fluorine atom; and a solvent; in the formula (1), RT is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; RX is a monovalent hydrocarbon group having 2 to 20 carbon atoms; and Cy represents an alicyclic structure having 3 to 20 ring members and formed together with a carbon atom to which this is bonded.

    RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN-FORMING METHOD

    公开(公告)号:US20220252978A1

    公开(公告)日:2022-08-11

    申请号:US17731758

    申请日:2022-04-28

    Inventor: Ken MARUYAMA

    Abstract: A radiation-sensitive composition includes a polymer including first and second structural units, a first compound that generates a first acid upon irradiation with radioactive ray, and a second compound that generates a second acid upon irradiation with radioactive ray. The first structural unit includes an acid-labile group, the first acid does not substantially dissociate the acid-labile group under 110° C. and a period of 1 min, the second acid dissociates the acid-labile group under 110° C. and a period of 1 min, and the second structural unit includes a monovalent group of formula (X), where Ar1 is a group obtained by removing (a+b) hydrogen atoms from an unsubstituted aryl group, RXA is a monovalent iodine atom, an iodinated alkyl group or an iodinated alkoxy group, RXB is a monovalent organic group, a is an integer of 1 to 10, and b is an integer of 1 to 10.

    PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT

    公开(公告)号:US20190155162A1

    公开(公告)日:2019-05-23

    申请号:US16251458

    申请日:2019-01-18

    Abstract: A pattern-forming method comprises forming a prepattern that is insoluble or hardly soluble in an organic solvent. A first composition is applied on at least lateral faces of the prepattern to fort i a resin layer.Adjacent regions to the prepattern of the resin layer are insolubilized or desolubilized in the organic solvent without being accompanied by an increase in a molecular weight by heating the prepattern and the resin layer. Regions other than the adjacent regions insolubilized or desolubilized of the resin layer are removed with the organic solvent. The first composition comprises a first polymer having a solubility in the organic solvent to be decreased by an action of an acid. At least one selected from the following features (i) and (ii) is satisfied: (i) the first polymer comprises a basic group; and (ii) the first composition further comprises a basic compound.

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