公开(公告)号：US20100041170A1

公开(公告)日：2010-02-18

申请号：US12368213

申请日：2009-02-09

申请人： John E. Epler ,  Paul S. Martin ,  Michael R. Krames

发明人： John E. Epler ,  Paul S. Martin ,  Michael R. Krames

IPC分类号： H01L33/00

CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

公开(公告)号：US07626210B2

公开(公告)日：2009-12-01

申请号：US11423419

申请日：2006-06-09

申请人： Oleg Borisovich Shchekin ,  Mark Pugh ,  Gerard Harbers ,  Michael R. Krames ,  John E. Epler

发明人： Oleg Borisovich Shchekin ,  Mark Pugh ,  Gerard Harbers ,  Michael R. Krames ,  John E. Epler

IPC分类号： H01L29/20

CPC分类号： H01L33/50 ,  H01L33/22 ,  H01L33/38 ,  H01L33/46 ,  H01L33/60 ,  H01L2224/13

摘要： Low profile, side-emitting LEDs are described, where all light is efficiently emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED is a flip chip with the n and p electrodes on the same side of the LED, and the LED is mounted electrode-side down on a submount. A reflector is provided on the top surface of the LED so that light impinging on the reflector is reflected back toward the active layer and eventually exits through a side surface of the LED. A waveguide layer and/or one or more phosphors layers are deposed between the semiconductor layers and the reflector for increasing the side emission area for increased efficiency. Side-emitting LEDs with a thickness of between 0.2-0.4 mm can be created.

摘要翻译： 描述了低侧面发光LED，其中所有光在与发光有源层的表面大致平行的相对窄的角度内被有效地发射。 LED使得能够创建非常薄的背光用于背光LCD。 在一个实施例中，LED是倒装芯片，其中n和p电极位于LED的同一侧，并且LED电极侧朝下安装在底座上。 在LED的顶表面上提供反射器，使得入射在反射器上的光被反射回有源层，最终通过LED的侧表面离开。 在半导体层和反射器之间布置波导层和/或一个或多个磷光体层以增加侧面发射面积以提高效率。 可以产生厚度在0.2-0.4mm之间的侧面发射LED。

公开(公告)号：US20080315228A1

公开(公告)日：2008-12-25

申请号：US11954712

申请日：2007-12-12

申请人： Michael R. Krames ,  Gerd Mueller ,  Oleg Borisovich Shchekin ,  Mark Pugh ,  Gerard Harbers ,  John E. Epler ,  Serge Bierhuizen ,  Regina Mueller-Mach

发明人： Michael R. Krames ,  Gerd Mueller ,  Oleg Borisovich Shchekin ,  Mark Pugh ,  Gerard Harbers ,  John E. Epler ,  Serge Bierhuizen ,  Regina Mueller-Mach

IPC分类号： H01L33/00

CPC分类号： H01L33/50 ,  H01L33/385 ,  H01L33/405 ,  H01L33/46 ,  H01L33/60 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Low profile, side-emitting LEDs are described that generate white light, where all light is emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED emits blue light and is a flip chip with the n and p electrodes on the same side of the LED. Separately from the LED, a transparent wafer has deposited on it a red and green phosphor layer. The phosphor color temperature emission is tested, and the color temperatures vs. positions along the wafer are mapped. A reflector is formed over the transparent wafer. The transparent wafer is singulated, and the phosphor/window dice are matched with the blue LEDs to achieve a target white light color temperature. The phosphor/window is then affixed to the LED.

摘要翻译： 描述了产生白光的低轮廓侧面发射LED，其中所有光在通常平行于发光有源层的表面的相对窄的角度内发射。 LED使得能够创建非常薄的背光用于背光LCD。 在一个实施例中，LED发射蓝光，并且是LED和LED的同一侧上的n和p电极的倒装芯片。 与LED分开，透明晶片在其上沉积有红色和绿色磷光体层。 测试荧光体色温发射，并且映射色温与晶片上的位置。 在透明晶片上形成反射器。 将透明晶片分离，并将荧光体/窗口骰子与蓝色LED匹配以实现目标白光色温。 然后将磷光体/窗口固定到LED。

公开(公告)号：US20070284600A1

公开(公告)日：2007-12-13

申请号：US11423419

申请日：2006-06-09

申请人： Oleg Borisovich Shchekin ,  Mark Pugh ,  Gerard Harbers ,  Michael R. Krames ,  John E. Epler

发明人： Oleg Borisovich Shchekin ,  Mark Pugh ,  Gerard Harbers ,  Michael R. Krames ,  John E. Epler

IPC分类号： H01L33/00

CPC分类号： H01L33/50 ,  H01L33/22 ,  H01L33/38 ,  H01L33/46 ,  H01L33/60 ,  H01L2224/13

摘要： Low profile, side-emitting LEDs are described, where all light is efficiently emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED is a flip chip with the n and p electrodes on the same side of the LED, and the LED is mounted electrode-side down on a submount. A reflector is provided on the top surface of the LED so that light impinging on the reflector is reflected back toward the active layer and eventually exits through a side surface of the LED. A waveguide layer and/or one or more phosphors layers are deposed between the semiconductor layers and the reflector for increasing the side emission area for increased efficiency. Side-emitting LEDs with a thickness of between 0.2-0.4 mm can be created.

摘要翻译： 描述了低侧面发光LED，其中所有光在与发光有源层的表面大致平行的相对窄的角度内被有效地发射。 LED使得能够创建非常薄的背光用于背光LCD。 在一个实施例中，LED是倒装芯片，其中n和p电极位于LED的同一侧，并且LED电极侧朝下安装在底座上。 在LED的顶表面上提供反射器，使得入射在反射器上的光被反射回有源层，最终通过LED的侧表面离开。 在半导体层和反射器之间布置波导层和/或一个或多个磷光体层以增加侧面发射面积以提高效率。 可以产生厚度在0.2-0.4mm之间的侧面发射LED。

公开(公告)号：US20120025231A1

公开(公告)日：2012-02-02

申请号：US13269669

申请日：2011-10-10

申请人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

发明人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

IPC分类号： H01L33/08

CPC分类号： H01L33/0079 ,  H01L21/2654 ,  H01L27/153

摘要： LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

摘要翻译： LED层生长在蓝宝石衬底上。 单个倒装芯片LED通过挖沟或掩模离子注入形成。 包含多个LED的模块被切割并安装在底座晶片上。 在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。 然后去除生长衬底，例如通过激光剥离。 在安装之前或之后形成半绝缘层，将LED机械连接在一起。 半绝缘层可以通过在衬底和LED层之间离子注入层来形成。 可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。 然后将底座切成块，以创建包含串联LED的LED模块。

公开(公告)号：US08080828B2

公开(公告)日：2011-12-20

申请号：US11954712

申请日：2007-12-12

申请人： Michael R. Krames ,  Gerd Mueller ,  Oleg Borisovich Shchekin ,  Mark Pugh ,  Gerard Harbers ,  John E. Epler ,  Serge Bierhuizen ,  Regina Mueller-Mach

发明人： Michael R. Krames ,  Gerd Mueller ,  Oleg Borisovich Shchekin ,  Mark Pugh ,  Gerard Harbers ,  John E. Epler ,  Serge Bierhuizen ,  Regina Mueller-Mach

IPC分类号： H01L33/00

CPC分类号： H01L33/50 ,  H01L33/385 ,  H01L33/405 ,  H01L33/46 ,  H01L33/60 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Low profile, side-emitting LEDs are described that generate white light, where all light is emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED emits blue light and is a flip chip with the n and p electrodes on the same side of the LED. Separately from the LED, a transparent wafer has deposited on it a red and green phosphor layer. The phosphor color temperature emission is tested, and the color temperatures vs. positions along the wafer are mapped. A reflector is formed over the transparent wafer. The transparent wafer is singulated, and the phosphor/window dice are matched with the blue LEDs to achieve a target white light color temperature. The phosphor/window is then affixed to the LED.

摘要翻译： 描述了产生白光的低轮廓侧面发射LED，其中所有光在通常平行于发光有源层的表面的相对窄的角度内发射。 LED使得能够创建非常薄的背光用于背光LCD。 在一个实施例中，LED发射蓝光，并且是LED和LED的同一侧上的n和p电极的倒装芯片。 与LED分开，透明晶片在其上沉积有红色和绿色磷光体层。 测试荧光体色温发射，并且映射色温与晶片上的位置。 在透明晶片上形成反射器。 将透明晶片分离，并将荧光体/窗口骰子与蓝色LED匹配以实现目标白光色温。 然后将磷光体/窗口固定到LED。

公开(公告)号：US08053905B2

公开(公告)日：2011-11-08

申请号：US12897866

申请日：2010-10-05

申请人： John E. Epler ,  Michael R. Krames ,  James G. Neff ,  Stefano Schiaffino

发明人： John E. Epler ,  Michael R. Krames ,  James G. Neff ,  Stefano Schiaffino

IPC分类号： H01L23/48

CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/1403

摘要： A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, a metal p-contact disposed on the p-type region, and a metal n-contact disposed on the n-type region. The metal p-contact and the metal n-contact are both formed on the same side of the semiconductor structure. The light emitting device is connected to a mount by a bonding structure. The bonding structure includes a plurality of metal regions separated by gaps and a metal structure disposed between the light emitting device and the mount proximate to an edge of the light emitting device. The metal structure is configured such that during bonding, the metal structure forms a continuous seal between the light emitting device and the mount.

摘要翻译： 发光器件包括：半导体结构，包括设置在n型区域和p型区域之间的发光层，设置在p型区域上的金属p型触点和设置在n型区域上的金属n型触点 型区域。 金属p型接触和金属n型接触都形成在半导体结构的同一侧。 发光器件通过接合结构连接到安装件。 接合结构包括由间隙隔开的多个金属区域和设置在发光器件和靠近发光器件的边缘的安装件之间的金属结构。 金属结构构造成使得在接合期间，金属结构在发光器件和安装座之间形成连续的密封。

公开(公告)号：US07875984B2

公开(公告)日：2011-01-25

申请号：US12397392

申请日：2009-03-04

申请人： John E. Epler ,  Michael R. Krames ,  James G. Neff

发明人： John E. Epler ,  Michael R. Krames ,  James G. Neff

IPC分类号： H01L23/48

CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/1403

摘要： A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.

摘要翻译： 在半导体发光器件和安装件之间设置有兼容的结合结构。 当半导体发光器件例如通过向半导体发光器件提供压力，加热和/或超声能量而将半导体发光器件附接到安装件时，柔性结合结构塌缩以部分地填充半导体发光器件和 安装。 在一些实施例中，柔性接合结构是在接合期间经历塑性变形的多个金属凸块。 在一些实施例中，柔性结合结构是多孔金属层。

公开(公告)号：US20100224902A1

公开(公告)日：2010-09-09

申请号：US12397392

申请日：2009-03-04

申请人： John E. Epler ,  Michael R. Krames ,  James G. Neff

发明人： John E. Epler ,  Michael R. Krames ,  James G. Neff

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/1403

摘要： A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.

摘要翻译： 在半导体发光器件和安装件之间设置有兼容的结合结构。 当半导体发光器件例如通过向半导体发光器件提供压力，加热和/或超声能量而将半导体发光器件附接到安装件时，柔性结合结构塌缩以部分地填充半导体发光器件和 安装。 在一些实施例中，柔性接合结构是在接合期间经历塑性变形的多个金属凸块。 在一些实施例中，柔性结合结构是多孔金属层。

公开(公告)号：US07601989B2

公开(公告)日：2009-10-13

申请号：US11692132

申请日：2007-03-27

申请人： John E. Epler ,  Hanmin Zhao ,  Michael R. Krames

发明人： John E. Epler ,  Hanmin Zhao ,  Michael R. Krames

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： In one embodiment, an AlInGaP LED includes a bottom n-type layer, an active layer, a top p-type layer, and a thick n-type GaP layer over the top p-type layer. The thick n-type GaP layer is then subjected to an electrochemical etch process that causes the n-type GaP layer to become porous and light-diffusing. Electrical contact is made to the p-GaP layer under the porous n-GaP layer by providing metal-filled vias through the porous layer, or electrical contact is made through non-porous regions of the GaP layer between porous regions. The LED chip may be mounted on a submount with the porous n-GaP layer facing the submount surface. The pores and metal layer reflect and diffuse the light, which greatly increases the light output of the LED. Other embodiments of the LED structure are described.

摘要翻译： 在一个实施例中，AlInGaP LED包括顶部p型层上的底部n型层，有源层，顶部p型层和厚n型GaP层。 然后对厚的n型GaP层进行电化学蚀刻工艺，其使得n型GaP层变得多孔和光扩散。 通过提供通过多孔层的金属填充的通孔，在多孔n-GaP层下面的p-GaP层进行电接触，或者通过多孔区域之间的GaP层的无孔区域进行电接触。 LED芯片可以安装在多孔n-GaP层面向底座表面的基座上。 孔和金属层反射和扩散光，这大大增加了LED的光输出。 描述LED结构的其它实施例。