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公开(公告)号：US08053905B2
公开(公告)日：2011-11-08
申请号：US12897866
申请日：2010-10-05
IPC分类号： H01L23/48
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/62 , H01L2224/0401 , H01L2224/0603 , H01L2224/1403
摘要： A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, a metal p-contact disposed on the p-type region, and a metal n-contact disposed on the n-type region. The metal p-contact and the metal n-contact are both formed on the same side of the semiconductor structure. The light emitting device is connected to a mount by a bonding structure. The bonding structure includes a plurality of metal regions separated by gaps and a metal structure disposed between the light emitting device and the mount proximate to an edge of the light emitting device. The metal structure is configured such that during bonding, the metal structure forms a continuous seal between the light emitting device and the mount.
摘要翻译： 发光器件包括：半导体结构，包括设置在n型区域和p型区域之间的发光层，设置在p型区域上的金属p型触点和设置在n型区域上的金属n型触点 型区域。 金属p型接触和金属n型接触都形成在半导体结构的同一侧。 发光器件通过接合结构连接到安装件。 接合结构包括由间隙隔开的多个金属区域和设置在发光器件和靠近发光器件的边缘的安装件之间的金属结构。 金属结构构造成使得在接合期间，金属结构在发光器件和安装座之间形成连续的密封。
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公开(公告)号：US07875984B2
公开(公告)日：2011-01-25
申请号：US12397392
申请日：2009-03-04
申请人： John E. Epler , Michael R. Krames , James G. Neff
发明人： John E. Epler , Michael R. Krames , James G. Neff
IPC分类号： H01L23/48
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/62 , H01L2224/0401 , H01L2224/0603 , H01L2224/1403
摘要： A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.
摘要翻译： 在半导体发光器件和安装件之间设置有兼容的结合结构。 当半导体发光器件例如通过向半导体发光器件提供压力，加热和/或超声能量而将半导体发光器件附接到安装件时，柔性结合结构塌缩以部分地填充半导体发光器件和 安装。 在一些实施例中，柔性接合结构是在接合期间经历塑性变形的多个金属凸块。 在一些实施例中，柔性结合结构是多孔金属层。
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公开(公告)号：US20100224902A1
公开(公告)日：2010-09-09
申请号：US12397392
申请日：2009-03-04
申请人： John E. Epler , Michael R. Krames , James G. Neff
发明人： John E. Epler , Michael R. Krames , James G. Neff
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/62 , H01L2224/0401 , H01L2224/0603 , H01L2224/1403
摘要： A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.
摘要翻译： 在半导体发光器件和安装件之间设置有兼容的结合结构。 当半导体发光器件例如通过向半导体发光器件提供压力，加热和/或超声能量而将半导体发光器件附接到安装件时，柔性结合结构塌缩以部分地填充半导体发光器件和 安装。 在一些实施例中，柔性接合结构是在接合期间经历塑性变形的多个金属凸块。 在一些实施例中，柔性结合结构是多孔金属层。
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公开(公告)号：US20110114987A1
公开(公告)日：2011-05-19
申请号：US12897866
申请日：2010-10-05
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/62 , H01L2224/0401 , H01L2224/0603 , H01L2224/1403
摘要： A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, a metal p-contact disposed on the p-type region, and a metal n-contact disposed on the n-type region. The metal p-contact and the metal n-contact are both formed on the same side of the semiconductor structure. The light emitting device is connected to a mount by a bonding structure. The bonding structure includes a plurality of metal regions separated by gaps and a metal structure disposed between the light emitting device and the mount proximate to an edge of the light emitting device. The metal structure is configured such that during bonding, the metal structure forms a continuous seal between the light emitting device and the mount.
摘要翻译： 发光器件包括：半导体结构，包括设置在n型区域和p型区域之间的发光层，设置在p型区域上的金属p型触点和设置在n型区域上的金属n型触点 型区域。 金属p型接触和金属n型接触都形成在半导体结构的同一侧。 发光器件通过接合结构连接到安装件。 接合结构包括由间隙隔开的多个金属区域和设置在发光器件和靠近发光器件的边缘的安装件之间的金属结构。 金属结构构造成使得在接合期间，金属结构在发光器件和安装座之间形成连续的密封。
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公开(公告)号：US08288186B2
公开(公告)日：2012-10-16
申请号：US12887853
申请日：2010-09-22
IPC分类号： H01L21/20 , H01L21/301
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
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公开(公告)号：US20110027975A1
公开(公告)日：2011-02-03
申请号：US12887853
申请日：2010-09-22
IPC分类号： H01L21/20
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。
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7.发明申请公开(公告)号：US20100226404A1
公开(公告)日：2010-09-09
申请号：US12781935
申请日：2010-05-18
CPC分类号： H01L33/18 , H01L25/0756 , H01L33/105 , H01L33/32 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.
摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 20}或{10 10} InGaN发光层。 在一些实施例中，定向为使得由有源区域发射的大部分光的偏振的光通过的偏振片用作接触。 在一些实施例中，发射相同或不同有色光的两个有源区域被定向成使得通过由底部有源区域发射的大部分光的偏振光通过的偏振器分离，并且反射多数光的偏振光 由顶部活动区域发射。 在一些实施例中，偏振器反射由波长转换层散射的光。
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公开(公告)号：US07488621B2
公开(公告)日：2009-02-10
申请号：US11421350
申请日：2006-05-31
申请人： John E. Epler , Paul S. Martin , Michael R. Krames
发明人： John E. Epler , Paul S. Martin , Michael R. Krames
IPC分类号： H01L21/00
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.
摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。
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公开(公告)号：US08679869B2
公开(公告)日：2014-03-25
申请号：US13423625
申请日：2012-03-19
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to a mount via the contacts. A growth substrate is removed from the semiconductor structure and a thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 μm some embodiments, less than 10 μm in some embodiments. The top side of the semiconductor structure may be textured.
摘要翻译： AlGaInP发光器件形成为薄的倒装芯片器件。 该器件包括包括设置在n型区域和p型区域之间的AlGaInP发光层的半导体结构。 电连接到n型和p型区的N-和p-触点都形成在半导体结构的同一侧上。 半导体结构通过触点连接到安装座。 从半导体结构去除生长衬底，并且省略厚的透明衬底，使得器件中的半导体层的总厚度小于15μm，在一些实施例中为一些实施例，小于10μm。 半导体结构的顶侧可以是纹理的。
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公开(公告)号：US08450754B2
公开(公告)日：2013-05-28
申请号：US13269669
申请日：2011-10-10
IPC分类号： H01L29/18
CPC分类号： H01L33/0079 , H01L21/2654 , H01L27/153
摘要： LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.
摘要翻译： LED层生长在蓝宝石衬底上。 单个倒装芯片LED通过挖沟或掩模离子注入形成。 包含多个LED的模块被切割并安装在底座晶片上。 在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。 然后去除生长衬底，例如通过激光剥离。 在安装之前或之后形成半绝缘层，将LED机械连接在一起。 半绝缘层可以通过在衬底和LED层之间离子注入层来形成。 可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。 然后将底座切成块，以创建包含串联LED的LED模块。
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