公开(公告)号：US07679140B2

公开(公告)日：2010-03-16

申请号：US12003040

申请日：2007-12-19

申请人： Young-soo Park ,  Wenxu Xianyu ,  Takashi Noguchi

发明人： Young-soo Park ,  Wenxu Xianyu ,  Takashi Noguchi

IPC分类号： H01L27/01

CPC分类号： H01L21/76259 ,  H01L21/32134 ,  H01L21/76256 ,  H01L27/1266 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78687 ,  H01L2924/0002 ,  Y10S438/933 ,  H01L2924/00

摘要： Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer.

摘要翻译： 提供了一种应变SOI结构和制造应变SOI结构的方法。 应变SOI结构包括绝缘衬底，形成在绝缘衬底上的SiO 2层和形成在SiO 2层上的应变硅层。

公开(公告)号：US20100041214A1

公开(公告)日：2010-02-18

申请号：US12461315

申请日：2009-08-07

申请人： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Xiaoxin Zhang ,  Huaxiang Yin

发明人： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Xiaoxin Zhang ,  Huaxiang Yin

IPC分类号： H01L21/20

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02686

摘要： A high quality single crystal substrate and a method of fabricating the same are provided. The method of fabricating a single crystal substrate includes: forming an insulator on a substrate; forming a window in the insulator, the window exposing a portion of the substrate; forming an epitaxial growth silicon or germanium seed layer on the portion of the substrate exposed through the window; depositing a silicon or germanium material layer, which are crystallization target material layers, on the epitaxial growth silicon 6r germanium seed layer and the insulator; and crystallizing the crystallization target material layer by melting and cooling the crystallization target material layer.

摘要翻译： 提供了高质量的单晶基板及其制造方法。 制造单晶衬底的方法包括：在衬底上形成绝缘体; 在所述绝缘体中形成窗口，所述窗口暴露所述基板的一部分; 在通过窗户暴露的衬底的部分上形成外延生长硅或锗种子层; 在外延生长硅6r锗种子层和绝缘体上沉积作为结晶靶材料层的硅或锗材料层; 并且通过熔化和冷却结晶化目标材料层来使结晶目标材料层结晶。

公开(公告)号：US20090162981A1

公开(公告)日：2009-06-25

申请号：US12372541

申请日：2009-02-17

申请人： Huaxiang YIN ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-young Kim

发明人： Huaxiang YIN ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-young Kim

IPC分类号： H01L21/84

CPC分类号： H01L29/785 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/7855

摘要： A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a substrate; a buffer layer formed on the substrate; a source and a drain spaced apart from each other on the buffer layer; a channel layer formed on the buffer layer to connect the source and the drain with each other; and a gate formed on the buffer layer to be spaced apart from the source, the drain and the channel layer.

摘要翻译： 提供薄膜晶体管及其制造方法。 薄膜晶体管包括基板; 形成在所述基板上的缓冲层; 在缓冲层上彼此间隔开的源极和漏极; 形成在所述缓冲层上的沟道层，以将所述源极和所述漏极彼此连接; 以及形成在缓冲层上以与源极，漏极和沟道层间隔开的栅极。

公开(公告)号：US20080272381A1

公开(公告)日：2008-11-06

申请号：US12175778

申请日：2008-07-18

申请人： Takashi NOGUCHI ,  Wenxu Xianyu ,  Huaxiang Yin

发明人： Takashi NOGUCHI ,  Wenxu Xianyu ,  Huaxiang Yin

IPC分类号： H01L51/50

CPC分类号： H01L27/1266 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/78603

摘要： Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the single crystalline silicon includes: growing a single crystalline silicon layer to a predetermined thickness on a crystal growth plate; depositing a buffer layer on the single crystalline silicon layer; forming a partition layer at a predetermined depth in the single crystalline silicon layer by, e.g., implanting hydrogen ions in the single crystalline silicon layer from an upper portion of an insulating layer; attaching a substrate to the buffer layer; and releasing the partition layer of the single crystalline silicon layer by heating the partition layer from the crystal growth plate to obtain a single crystalline silicon layer of a predetermined thickness on the substrate.

摘要翻译： 提供一种有机发光显示器，其中在塑料基板上形成包括开关晶体管和由单晶硅形成的驱动晶体管的2T-1C结构的半导体电路单元。 制造单晶硅的方法包括：在晶体生长板上生长单晶硅层至预定厚度; 在单晶硅层上沉积缓冲层; 通过例如从绝缘层的上部注入单晶硅层中的氢离子，在单晶硅层中形成预定深度的分隔层; 将衬底附接到缓冲层; 以及通过从晶体生长板加热分隔层来释放单晶硅层的分隔层，以在基板上获得预定厚度的单晶硅层。

公开(公告)号：US07416924B2

公开(公告)日：2008-08-26

申请号：US11270541

申请日：2005-11-10

申请人： Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

发明人： Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L51/40 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/78603

摘要： Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the single crystalline silicon includes: growing a single crystalline silicon layer to a predetermined thickness on a crystal growth plate; depositing a buffer layer on the single crystalline silicon layer; forming a partition layer at a predetermined depth in the single crystalline silicon layer by, e.g., implanting hydrogen ions in the single crystalline silicon layer from an upper portion of an insulating layer; attaching a substrate to the buffer layer; and releasing the partition layer of the single crystalline silicon layer by heating the partition layer from the crystal growth plate to obtain a single crystalline silicon layer of a predetermined thickness on the substrate.

摘要翻译： 提供一种有机发光显示器，其中在塑料基板上形成包括开关晶体管和由单晶硅形成的驱动晶体管的2T-1C结构的半导体电路单元。 制造单晶硅的方法包括：在晶体生长板上生长单晶硅层至预定厚度; 在单晶硅层上沉积缓冲层; 通过例如从绝缘层的上部注入单晶硅层中的氢离子，在单晶硅层中形成预定深度的分隔层; 将衬底附接到缓冲层; 以及通过从晶体生长板加热分隔层来释放单晶硅层的分隔层，以在基板上获得预定厚度的单晶硅层。

公开(公告)号：US20060102888A1

公开(公告)日：2006-05-18

申请号：US11270629

申请日：2005-11-10

申请人： Hans Cho ,  Wenxu Xianyu

发明人： Hans Cho ,  Wenxu Xianyu

IPC分类号： H01L31/109

CPC分类号： H01L21/26506 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/268

摘要： A semiconductor substrate and a method of fabricating the same are provided. The semiconductor substrate includes: a Si substrate; a SiO2 layer having a predetermined width formed on the Si substrate; a SiGe layer having a first end portion and a second end portion at both sides and formed on the Si substrate and the SiO2 layer to bury the SiO2 layer, and generated from both the first and second ends using epitaxial growth; and strained Si layers, in which lattice mismatch of Si is induced, formed on the SiGe layer above the SiO2 layer using epitaxial growth.

摘要翻译： 提供半导体衬底及其制造方法。 半导体衬底包括：Si衬底; 在Si衬底上形成具有预定宽度的SiO 2层; SiGe层，其具有第一端部和两侧的第二端部，并形成在Si衬底和SiO 2层上以埋置SiO 2层，并且产生 从第一和第二端使用外延生长; 使用外延生长在SiO 2层上方的SiGe层上形成Si的晶格失配的应变Si层。

公开(公告)号：US20060094212A1

公开(公告)日：2006-05-04

申请号：US11248620

申请日：2005-10-13

申请人： Takashi Noguchi ,  Wenxu Xianyu ,  Hans Cho ,  Huaxiang Yin

发明人： Takashi Noguchi ,  Wenxu Xianyu ,  Hans Cho ,  Huaxiang Yin

IPC分类号： H01L21/20

CPC分类号： H01L21/02598 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/66772

摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer.

公开(公告)号：US20050139882A1

公开(公告)日：2005-06-30

申请号：US11024469

申请日：2004-12-30

申请人： Wenxu Xianyu ,  Takashi Noguchi ,  In-kyeong Yoo ,  Young-soo Park

发明人： Wenxu Xianyu ,  Takashi Noguchi ,  In-kyeong Yoo ,  Young-soo Park

IPC分类号： H01L21/3205 ,  G11C11/22 ,  H01L21/82 ,  H01L21/8239 ,  H01L21/8246 ,  H01L21/84 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/12 ,  H01L29/786 ,  H01L31/119

CPC分类号： H01L27/11507 ,  H01L21/84 ,  H01L27/11502 ,  H01L27/12

摘要： In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on the first lower capacitor, and a second substrate on the first lower switching element. The electronic device may further include a second lower switching element which is isolated from the first lower capacitor, and an upper capacitor on the second substrate, the lower electrode of the upper capacitor being connected to the second lower switching element.

摘要翻译： 在电子设备及其制造方法中，电子设备包括第一基板，第一基板上的第一下部电容器，第一下部电容器上的第一下部开关元件，以及第一下部开关 元件。 电子设备还可以包括与第一下电容器隔离的第二下开关元件和第二基板上的上电容器，上电容器的下电极连接到第二下开关元件。

公开(公告)号：US08508009B2

公开(公告)日：2013-08-13

申请号：US12662607

申请日：2010-04-26

申请人： Huaxiang Yin ,  Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Hans S. Cho

发明人： Huaxiang Yin ,  Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Hans S. Cho

IPC分类号： H01L31/062 ,  H01L27/146 ,  H01L31/107

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02327

摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.

摘要翻译： 提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。 微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。 微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。 形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有 圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。 图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

公开(公告)号：US08187905B2

公开(公告)日：2012-05-29

申请号：US12805821

申请日：2010-08-20

申请人： Huaxiang Yin ,  Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Hans S. Cho

发明人： Huaxiang Yin ,  Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Hans S. Cho

IPC分类号： H01L31/062 ,  H01L31/107

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02327

摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.

摘要翻译： 提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。 微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。 微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。 形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有 圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。 图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。