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231 条记录 (耗时 0.029 秒)

    Double electrode cantilever actuation for seek-scan-probe data access
    21.
    发明授权
    Double electrode cantilever actuation for seek-scan-probe data access 有权
    用于寻道扫描探头数据访问的双电极悬臂驱动

    公开(公告)号：US07796492B2

    公开(公告)日：2010-09-14

    申请号：US11823214

    申请日：2007-06-27

    申请人： Tsung-Kuan Allen Chou ,  Qing Ma

    发明人： Tsung-Kuan Allen Chou ,  Qing Ma

    IPC分类号： G11B9/00

    CPC分类号： G11B9/1454 ,  B82Y10/00 ,  G11B9/1445

    摘要： A seek-scan-probe memory device, utilizing a media electrode to allow active cantilevers to contact the storage media, and a pull electrode to pull up cantilevers away from the storage media when in an inactive mode. Other embodiments are described and claimed.

    摘要翻译： 寻找扫描探针存储装置，利用介质电极来允许主动悬臂与存储介质接触;以及拉电极，当处于非活动模式时，将悬臂从存储介质上拉出。 描述和要求保护其他实施例。

    Bit-erasing architecture for seek-scan probe (SSP) memory storage
    22.
    发明申请
    Bit-erasing architecture for seek-scan probe (SSP) memory storage 有权
    扫描探针（SSP）存储器的位擦除架构

    公开(公告)号：US20080012094A1

    公开(公告)日：2008-01-17

    申请号：US11477276

    申请日：2006-06-28

    申请人： Qing Ma ,  Valluri R. Rao ,  Tsung-Kuan Allen Chou

    发明人： Qing Ma ,  Valluri R. Rao ,  Tsung-Kuan Allen Chou

    IPC分类号： H01L29/22

    CPC分类号： B82Y10/00 ,  G11B9/04 ,  G11B9/1436 ,  G11B9/1472

    摘要： An apparatus comprising a substrate, a heater formed on the substrate, and a phase-change layer formed on the heater. The heater comprises a heater layer and first and second electrodes electrically coupled to the heater layer. A process comprising forming a heater on a substrate and forming a phase-change layer on the heater. The heater comprises a heater layer and first and second electrodes electrically coupled to the heater layer.

    摘要翻译： 一种包括基板，形成在基板上的加热器和形成在加热器上的相变层的装置。 加热器包括加热器层和电耦合到加热器层的第一和第二电极。 一种方法，包括在基底上形成加热器并在加热器上形成相变层。 加热器包括加热器层和电耦合到加热器层的第一和第二电极。

    FBAR device frequency stabilized against temperature drift
    23.
    发明申请
    FBAR device frequency stabilized against temperature drift 审中-公开
    FBAR器件频率稳定，防止温度漂移

    公开(公告)号：US20060001329A1

    公开(公告)日：2006-01-05

    申请号：US10882510

    申请日：2004-06-30

    申请人： Valluri Rao ,  Qing Ma ,  Quan Tran ,  Dong Shim ,  Li-Peng Wang

    发明人： Valluri Rao ,  Qing Ma ,  Quan Tran ,  Dong Shim ,  Li-Peng Wang

    IPC分类号： H01L41/08

    CPC分类号： H03H9/02102 ,  H03H2009/02196

    摘要： A film bulk acoustic resonator (FBAR) comprises a piezoelectric film sandwiched between a top electrode and a bottom electrode. A temperature sensor is provided to sense a temperature to determine a temperature induced frequency drift for the FBAR. A voltage controller operatively connected to the temperature sensor supplies a direct current (DC) bias voltage to the FBAR to induce an opposite voltage induced frequency drift to compensate for the temperature induced frequency drift.

    摘要翻译： 薄膜体声波谐振器（FBAR）包括夹在顶部电极和底部电极之间的压电薄膜。 提供温度传感器以感测温度以确定FBAR的温度感应频率漂移。 可操作地连接到温度传感器的电压控制器向FBAR提供直流（DC）偏置电压以引起相反的电压感应频率漂移以补偿温度引起的频率漂移。

    Structure for reducing die corner and edge stresses in microelectronic packages
    27.
    发明授权
    Structure for reducing die corner and edge stresses in microelectronic packages 失效
    用于减少微电子封装中的管芯拐角和边缘应力的结构

    公开(公告)号：US06617682B1

    公开(公告)日：2003-09-09

    申请号：US09675112

    申请日：2000-09-28

    申请人： Qing Ma ,  Jim Maveety ,  Quan Tran

    发明人： Qing Ma ,  Jim Maveety ,  Quan Tran

    IPC分类号： H01L2334

    CPC分类号： H01L23/36 ,  H01L23/3677 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/15151 ,  H01L2924/16151 ,  H01L2924/00 ,  H01L2224/0401

    摘要： A microelectronic die is aligned with a package substrate and attached to it using solder balls. A specially shaped heat spreader, preferably with a coefficient of thermal expansion (CTE) similar to that of silicon, is attached to the back side of the die using a heat-conducting adhesive. An epoxy-based material is flowed into the gap between the die, the substrate, and the heat spreader via a through-hole in either the substrate or the heat spreader using a dispense process or a transfer molding process. By positioning the heat spreader to abut the die corners and/or edges, the stresses on the die are substantially reduced or eliminated.

    摘要翻译： 微电子管芯与封装衬底对准，并使用焊球与其连接。 使用导热粘合剂将特别形状的散热器，优选具有类似于硅的热膨胀系数（CTE）附着到模具的背面。 使用分配工艺或传递模塑工艺，环氧基材料通过衬底或散热器中的通孔流入模具，衬底和散热器之间的间隙中。 通过定位散热器以抵靠模具的拐角和/或边缘，模具上的应力被显着地减少或消除。

    Integrated circuit guard ring structures
    28.
    发明授权
    Integrated circuit guard ring structures 有权
    集成电路保护环结构

    公开(公告)号：US06509622B1

    公开(公告)日：2003-01-21

    申请号：US09644639

    申请日：2000-08-23

    申请人： Qing Ma ,  Jin Lee ,  Quan Tran ,  Harry Fujimoto

    发明人： Qing Ma ,  Jin Lee ,  Quan Tran ,  Harry Fujimoto

    IPC分类号： H01L27095

    CPC分类号： H01L23/585 ,  H01L21/76838 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit including a die having a circuit area and a plurality of guard rings. The circuit area includes active devices, passive devices, and interconnects connected to form an integrated circuit. The plurality of guard rings includes a plurality of stacked guard rings having substantially equal widths and encircling the circuit area. Alternatively, the plurality of guard rings includes metallization level guard rings interleaved with one or more via level guard rings. Each of the one or more via level guard rings includes one or more guard rings encircling the circuit area. Alternatively, the plurality of guard rings includes a plurality of concentric guard rings encircling the circuit area. Each of the plurality of guard rings is fabricated from a metal, such as aluminum, copper, or silver, or an alloy of aluminum, copper, or silver.

    摘要翻译： 一种集成电路，包括具有电路区域和多个保护环的管芯。 电路区域包括有源器件，无源器件和互连，形成集成电路。 多个保护环包括多个具有基本上相等的宽度并且围绕电路区域的堆叠保护环。 或者，多个保护环包括与一个或多个通孔级保护环交错的金属化水平保护环。 一个或多个通孔级保护环中的每一个包括环绕电路区域的一个或多个保护环。 或者，多个保护环包括环绕电路区域的多个同心保护环。 多个保护环中的每一个由诸如铝，铜或银的金属或铝，铜或银的合金制成。

    Semiconductor device having a low-K dielectric layer
    29.
    发明授权
    Semiconductor device having a low-K dielectric layer 有权
    具有低K电介质层的半导体器件

    公开(公告)号：US06914335B2

    公开(公告)日：2005-07-05

    申请号：US10038343

    申请日：2002-01-02

    申请人： Ebrahim Andideh ,  Qing Ma ,  Quan Tran ,  Steve Towle

    发明人： Ebrahim Andideh ,  Qing Ma ,  Quan Tran ,  Steve Towle

    IPC分类号： H01L21/768 ,  H01L29/40

    CPC分类号： H01L23/5329 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An improved semiconductor device is described. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.

    摘要翻译： 描述了改进的半导体器件。 该半导体器件包括形成在衬底上的具有低k介电常数的第一绝缘层，该第一绝缘层优选包含掺碳氧化物。 该器件还包括形成在第一层上的具有相对高的介电常数和优异的机械强度的第二层。 第二层优选在压应力下。 可以在第二层上形成第三层，其具有相对低的介电常数和相对较差的机械强度，并且可以在第三层上形成第四层，第三层具有相对高的介电常数和优异的机械强度。