公开(公告)号：US07858483B2

公开(公告)日：2010-12-28

申请号：US11154384

申请日：2005-06-15

申请人： Hyung Bok Choi ,  Jong Bum Park ,  Kee Jeung Lee ,  Jong Min Lee

发明人： Hyung Bok Choi ,  Jong Bum Park ,  Kee Jeung Lee ,  Jong Min Lee

IPC分类号： H01L21/20

CPC分类号： H01L27/10814 ,  H01L27/10855 ,  H01L28/75 ,  H01L28/91

摘要： A method for forming a capacitor of a semiconductor device includes forming a first insulation layer having a storage node plug on a semiconductor substrate; forming an etch stop layer and a second insulation layer sequentially on the substrate having the first insulation layer; forming a hole exposing a portion of the storage node plug by selectively etching the second insulation layer by using the etch stop layer; recessing a portion of the storage node plug exposed by the hole; forming a barrier metal layer on a surface of the recessed storage node plug; forming a storage node electrode connected to the storage node plug through the barrier metal layer in the hole; and forming a dielectric layer and a metal layer for a plate electrode sequentially on the storage node electrode.

摘要翻译： 一种形成半导体器件的电容器的方法包括在半导体衬底上形成具有存储节点插头的第一绝缘层; 在具有第一绝缘层的基板上依次形成蚀刻停止层和第二绝缘层; 通过使用所述蚀刻停止层选择性地蚀刻所述第二绝缘层，形成暴露所述存储节点插塞的一部分的孔; 使由孔露出的存储节点插头的一部分凹陷; 在所述凹形存储节点插塞的表面上形成阻挡金属层; 形成通过所述孔中的所述阻挡金属层与所述存储节点插头连接的存储节点电极; 以及在所述存储节点电极上依次形成用于平板电极的电介质层和金属层。

公开(公告)号：US07838414B2

公开(公告)日：2010-11-23

申请号：US11834264

申请日：2007-08-06

申请人： Chan Bae Kim ,  Jong Min Lee ,  Chae O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Sung Kyu Min

发明人： Chan Bae Kim ,  Jong Min Lee ,  Chae O Chung ,  Hyeon Ju An ,  Hyo Seok Lee ,  Sung Kyu Min

IPC分类号： H01L21/4763

CPC分类号： H01L21/76825 ,  H01L21/76828 ,  H01L21/76829

摘要： A semiconductor device is manufactured by forming a low dielectric constant layer on a semiconductor substrate which is formed with metal lines; implementing primary ultraviolet treatment of the low dielectric constant layer; forming a capping layer on the low dielectric constant layer having undergone the primary ultraviolet treatment; and implementing secondary ultraviolet treatment of the low dielectric constant layer including the capping layer.

摘要翻译： 半导体器件通过在由金属线形成的半导体衬底上形成低介电常数层来制造; 实施低介电常数层的初级紫外线处理; 在经过一次紫外线处理的低介电常数层上形成覆盖层; 并实施包括封盖层的低介电常数层的二次紫外线处理。

公开(公告)号：US20100174171A1

公开(公告)日：2010-07-08

申请号：US12376799

申请日：2007-08-09

申请人： Kun Ho Lee ,  Yu Yong Choi ,  Kyung Jin Kim ,  Jong Min Lee

发明人： Kun Ho Lee ,  Yu Yong Choi ,  Kyung Jin Kim ,  Jong Min Lee

IPC分类号： A61B5/055

CPC分类号： A61B5/16 ,  G01R33/4806 ,  G06F19/00

摘要： The present invention relates to a method for measuring human intelligence using a neurobiogical model. The invention provides a method which enables neurometric IQ to be measured by processing the MRI and fMRI images of subjects to determine cortical thicknesses and brain activation levels, determining structural IQ (sIQ) and functional IQ (fIQ) from the cortical thicknesses and the brain activation levels, and using the structural IQ (sIQ) and the functional IQ (fIQ) as predictors to measure the neurometric IQ of the subject. According to the present invention, the concept of a neurometric IQ (nIQ) model is established and can assist in easily assessing individual differences in general cognitive ability. These results suggest that general cognitive ability can be explained by two different neural bases or traits: facilitation of neural circuits and accumulation of crystallized knowledge.

摘要翻译： 本发明涉及一种使用神经生物学模型测量人类智力的方法。 本发明提供一种能够通过处理受试者的MRI和fMRI图像来测量神经测量IQ以确定皮层厚度和脑激活水平，从皮层厚度和脑激活确定结构性IQ（sIQ）和功能IQ（fIQ）的方法 水平，并使用结构性IQ（sIQ）和功能IQ（fIQ）作为预测因子来测量受试者的神经测量IQ。 根据本发明，建立了神经测量IQ（nIQ）模型的概念，并且可以帮助轻松评估一般认知能力中的个体差异。 这些结果表明，一般认知能力可以通过两种不同的神经基础或特征来解释：促进神经回路和结晶化知识的积累。

公开(公告)号：US20080204707A1

公开(公告)日：2008-08-28

申请号：US12081675

申请日：2008-04-18

申请人： Yoha Hwang ,  Sang Bae Lee ,  Jong Min Lee

发明人： Yoha Hwang ,  Sang Bae Lee ,  Jong Min Lee

IPC分类号： G01L1/24

CPC分类号： G01B11/18 ,  G01M11/085

摘要： The present invention relates to a monitoring device for a rotating body, which can accurately measure signals from a fiber Bragg grating sensor provided on the rotating body by compensating a transmission loss variation and a distortion of the sensor signals. A rotation-side optical fiber has at least one deformation sensor at a portion thereof and a reference sensor at one end thereof. The sensors are made by forming a Bragg grating in the rotation-side optical fiber. A fixed-side optical fiber is mounted to the fixed body so as to be opposed to the one end of the rotation-side optical fiber. A signal processing unit detects a deformation of the rotating body by subtracting a signal corresponding to the light reflected from the reference sensor from a signal corresponding to the light reflected from the deformation sensor.

摘要翻译： 本发明涉及一种用于旋转体的监测装置，其可以通过补偿传输损耗变化和传感器信号的失真来精确地测量设置在旋转体上的光纤布拉格光栅传感器的信号。 旋转侧光纤在其一部分具有至少一个变形传感器，其一端具有基准传感器。 传感器通过在旋转侧光纤中形成布拉格光栅而制成。 固定侧光纤被安装到固定体上以与旋转侧光纤的一端相对。 信号处理单元从对应于从变形传感器反射的光的信号中减去与从基准传感器反射的光相对应的信号来检测旋转体的变形。

公开(公告)号：US20080113656A1

公开(公告)日：2008-05-15

申请号：US11938375

申请日：2007-11-12

申请人： Seung Yop Lee ,  Jong Min Lee

发明人： Seung Yop Lee ,  Jong Min Lee

IPC分类号： H04Q7/22

CPC分类号： H04L67/325

摘要： A method and system for updating contents is provided. According to the method and system for updating the contents, a content provision server determines scheduling of update time information, which is classified by each member, and transmits the update time information to each mobile terminal of each member, and the mobile terminal transmits an update request signal to the content provision server based on the update time information, and receives update information from the content provision server.

摘要翻译： 提供了一种更新内容的方法和系统。 根据用于更新内容的方法和系统，内容提供服务器确定由每个成员分类的更新时间信息的调度，并将更新时间信息发送到每个成员的每个移动终端，并且移动终端发送更新 基于更新时间信息向内容提供服务器请求信号，并从内容提供服务器接收更新信息。

公开(公告)号：US06559000B2

公开(公告)日：2003-05-06

申请号：US09894920

申请日：2001-06-29

申请人： Kyong Min Kim ,  Jong Min Lee ,  Chan Lim ,  Han Sang Song

发明人： Kyong Min Kim ,  Jong Min Lee ,  Chan Lim ,  Han Sang Song

IPC分类号： H01L218242

CPC分类号： H01L28/60 ,  C23C16/18 ,  H01L21/31604

摘要： There is disclosed a method of manufacturing a capacitor in a semiconductor device. The present invention forms a Ru film as a lower electrode of the capacitor in which a Ta2O5 film is used as a dielectric film by introducing Ru of a raw material, oxygen and NH3 in order to reduce oxygen or a NH3 plasma process as a subsequent process is performed in order to remove oxygen existing on the surface of the Ru film. Therefore, the present invention can prevent oxidization of a diffusion prevention film due to oxygen existing in a Ru film during annealing process performed after deposition of a Ta2O5 film and thus improve reliability of the device.

公开(公告)号：US20140343465A1

公开(公告)日：2014-11-20

申请号：US14062055

申请日：2013-10-24

申请人： Seung-Jong Kim ,  Chang Hwan Kim ,  Jun Ho Choi ,  Chan Yul Jung ,  Jong Min Lee

发明人： Seung-Jong Kim ,  Chang Hwan Kim ,  Jun Ho Choi ,  Chan Yul Jung ,  Jong Min Lee

IPC分类号： A61H1/00 ,  A61B19/00

CPC分类号： A61H1/024 ,  A61H1/0244 ,  A61H1/0266 ,  A61H2201/163 ,  A61H2201/1635 ,  A61H2201/1642

摘要： The gait rehabilitation robot having a passive mechanism includes: a first auxiliary link member connected to a portion between the pelvis and the knee of a rehabilitating person; a joint coupled to a lower end of the first auxiliary link member; a second auxiliary link member coupled to the lower end of the joint and connected to a portion between the pelvis and the knee of the rehabilitating person; a first spring coupled to an upper end of the first auxiliary link member to prevent introversion and extroversion of a hip point from occurring when the rehabilitating person is walking; a foot support which comes into contact with the foot of the rehabilitating person; an ankle joint for connecting the foot support and the second auxiliary link member; and a second spring coupled to a side of the foot support to compensate an entropion angle.

摘要翻译： 具有被动机构的步态康复机器人包括：第一辅助连杆构件，连接到骨盆与修复人的膝盖之间的部分; 联接到所述第一辅助连杆构件的下端的接头; 耦合到所述关节的下端并连接到所述骨盆和所述康复者的膝盖之间的部分的第二辅助连接构件; 耦合到所述第一辅助连接构件的上端的第一弹簧，以防止在所述康复人行走时发生臀部的内向和外向; 与修复人员的脚接触的脚部支援; 用于连接脚支撑件和第二辅助连杆构件的踝关节; 以及耦合到所述脚支撑件的侧面以补偿熵角的第二弹簧。

公开(公告)号：US08722474B2

公开(公告)日：2014-05-13

申请号：US13592589

申请日：2012-08-23

申请人： Hyung Sup Yoon ,  Byoung-Gue Min ,  Jong Min Lee ,  Seong-Il Kim ,  Dong Min Kang ,  Ho Kyun Ahn ,  Jong-Won Lim ,  Jae Kyoung Mun ,  Eun Soo Nam

发明人： Hyung Sup Yoon ,  Byoung-Gue Min ,  Jong Min Lee ,  Seong-Il Kim ,  Dong Min Kang ,  Ho Kyun Ahn ,  Jong-Won Lim ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC分类号： H01L21/338

CPC分类号： H01L29/0649 ,  H01L21/28593 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

摘要： Disclosed are a semiconductor device including a stepped gate electrode and a method of fabricating the semiconductor device. The semiconductor device according to an exemplary embodiment of the present disclosure includes: a semiconductor substrate having a structure including a plurality of epitaxial layers and including an under-cut region formed in a part of a Schottky layer in an upper most part thereof; a cap layer, a first nitride layer and a second nitride layer sequentially formed on the semiconductor substrate to form a stepped gate insulating layer pattern; and a stepped gate electrode formed by depositing a heat-resistant metal through the gate insulating layer pattern, wherein the under-cut region includes an air-cavity formed between the gate electrode and the Schottky layer.

摘要翻译： 本发明公开了一种半导体器件，包括阶梯栅电极和制造该半导体器件的方法。 根据本公开的示例性实施例的半导体器件包括：半导体衬底，其具有包括多个外延层的结构，并且包括形成在其最上部的肖特基层的一部分中的下切割区域; 顺序地形成在半导体衬底上的盖层，第一氮化物层和第二氮化物层，以形成台阶栅极绝缘层图案; 以及通过栅极绝缘层图案沉积耐热金属而形成的阶梯形栅电极，其中下切区域包括形成在栅电极和肖特基层之间的空腔。

公开(公告)号：US20130146944A1

公开(公告)日：2013-06-13

申请号：US13592589

申请日：2012-08-23

申请人： Hyung Sup YOON ,  Byoung-Gue Min ,  Jong Min Lee ,  Seong-II Kim ,  Dong Min Kang ,  Ho Kyun Ahn ,  Jong-Won Lim ,  Jae Kyoung Mun ,  Eun Soo Nam

发明人： Hyung Sup YOON ,  Byoung-Gue Min ,  Jong Min Lee ,  Seong-II Kim ,  Dong Min Kang ,  Ho Kyun Ahn ,  Jong-Won Lim ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC分类号： H01L29/812 ,  H01L21/338

CPC分类号： H01L29/0649 ,  H01L21/28593 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

摘要： Disclosed are a semiconductor device including a stepped gate electrode and a method of fabricating the semiconductor device. The semiconductor device according to an exemplary embodiment of the present disclosure includes: a semiconductor substrate having a structure including a plurality of epitaxial layers and including an under-cut region formed in a part of a Schottky layer in an upper most part thereof; a cap layer, a first nitride layer and a second nitride layer sequentially formed on the semiconductor substrate to form a stepped gate insulating layer pattern; and a stepped gate electrode formed by depositing a heat-resistant metal through the gate insulating layer pattern, wherein the under-cut region includes an air-cavity formed between the gate electrode and the Schottky layer.

摘要翻译： 本发明公开了一种半导体器件，包括阶梯栅电极和制造该半导体器件的方法。 根据本公开的示例性实施例的半导体器件包括：半导体衬底，其具有包括多个外延层的结构，并且包括形成在其最上部的肖特基层的一部分中的下切割区域; 顺序地形成在半导体衬底上的盖层，第一氮化物层和第二氮化物层，以形成台阶栅极绝缘层图案; 以及通过栅极绝缘层图案沉积耐热金属而形成的阶梯形栅电极，其中下切区域包括形成在栅电极和肖特基层之间的空腔。

公开(公告)号：US08426771B2

公开(公告)日：2013-04-23

申请号：US12859753

申请日：2010-08-19

申请人： Yoha Hwang ,  Jong Min Lee

发明人： Yoha Hwang ,  Jong Min Lee

IPC分类号： B23K9/10

CPC分类号： B23K9/0953 ,  B23K9/007

摘要： Various embodiments of a method for monitoring a machine condition are provided. An embodiment of the present invention provides a method of monitoring a machine condition, comprising the following steps: modeling a normal signal model performed by detecting a signal for monitoring condition of a normal machine and converting the detected signal to a normal signal model in time domain using a hidden Markov model (HMM) algorithm; calculating a probability value data of the monitoring signal at a subject machine performed by detecting a signal for monitoring condition of the subject machine in real-time and converting the detected signal to the probability value data relative to the normal state signal model using the HMM algorithm; and determining a section having deficiency where the probability value data of the monitoring signal at the subject machinery is not maintained constantly relative to the normal signal model.

摘要翻译： 提供了用于监视机器状况的方法的各种实施例。 本发明的实施例提供一种监视机器状况的方法，包括以下步骤：通过检测用于监视正常机器状态的信号进行模拟，并将检测到的信号转换为正常的时域信号模型 使用隐马尔可夫模型（HMM）算法; 通过检测用于主机的状态的信号实时检测所执行的监视信号的概率值数据，并使用HMM算法将检测信号相对于正常状态信号模型转换为概率值数据 ; 并且确定具有缺陷的部分，其中在所述主题机器处的所述监视信号的概率值数据相对于所述正常信号模型不被恒定地维持。