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    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120146107A1

    公开(公告)日：2012-06-14

    申请号：US13274367

    申请日：2011-10-17

    申请人： Jong-Won LIM ,  Hokyun Ahn ,  Dong Min Kang ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

    发明人： Jong-Won LIM ,  Hokyun Ahn ,  Dong Min Kang ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

    IPC分类号： H01L29/772 ,  H01L21/28

    CPC分类号： H01L29/42376 ,  H01L29/2003 ,  H01L29/40 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/812

    摘要： Disclosed are a semiconductor device and a method of manufacturing the same. In the semiconductor device according to an exemplary embodiment of the present disclosure, at the time of forming a source electrode, a drain electrode, a field plate electrode, and a gate electrode on a substrate having a heterojunction structure such as AlGaN/GaN, the field plate electrode made of the same metal as the gate electrode is formed on the side surface of a second support part positioned below a head part of the gate electrode so as to prevent the gate electrode from collapsing and improve high-frequency and high-voltage characteristic of the semiconductor device.

    摘要翻译： 公开了一种半导体器件及其制造方法。 在根据本公开的示例性实施例的半导体器件中，在具有诸如AlGaN / GaN的异质结结构的衬底上形成源电极，漏电极，场板电极和栅电极时， 由与栅电极相同的金属制成的场板电极形成在位于栅电极的头部下方的第二支撑部分的侧表面上，以防止栅电极塌陷并改善高频和高电压 半导体器件的特性。

    Method of fabricating T-gate
    7.
    发明申请
    Method of fabricating T-gate 有权
    制造T型门的方法

    公开(公告)号：US20070128752A1

    公开(公告)日：2007-06-07

    申请号：US11607417

    申请日：2006-12-01

    申请人： Jae Yoeb Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

    发明人： Jae Yoeb Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

    IPC分类号： H01L21/00

    CPC分类号： H01L21/0331 ,  H01L21/28587

    摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

    摘要翻译： 提供一种制造T型栅极的方法。 该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。 因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

    Method of fabricating T-gate
    8.
    发明授权
    Method of fabricating T-gate 有权
    制造T型门的方法

    公开(公告)号：US07468295B2

    公开(公告)日：2008-12-23

    申请号：US11607417

    申请日：2006-12-01

    申请人： Jae Yoeb Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

    发明人： Jae Yoeb Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

    IPC分类号： H01L21/338

    CPC分类号： H01L21/0331 ,  H01L21/28587

    摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

    摘要翻译： 提供一种制造T型栅极的方法。 该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。 因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

    Method of fabricating T-gate
    9.
    发明授权
    Method of fabricating T-gate 失效
    制造T型门的方法

    公开(公告)号：US07915106B2

    公开(公告)日：2011-03-29

    申请号：US12270016

    申请日：2008-11-13

    申请人： Jae Yeob Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

    发明人： Jae Yeob Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

    IPC分类号： H01L21/338 ,  H01L21/44 ,  H01L21/28

    CPC分类号： H01L21/0331 ,  H01L21/28587

    摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

    摘要翻译： 提供一种制造T型栅极的方法。 该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。 因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

    Microwave power amplifier
    10.
    发明授权
    Microwave power amplifier 有权
    微波功率放大器

    公开(公告)号：US06940354B2

    公开(公告)日：2005-09-06

    申请号：US10735037

    申请日：2003-12-11

    申请人： Dong Min Kang ,  Hyung Sup Yoon ,  Hea Cheon Kim ,  Kyoung Ik Cho

    发明人： Dong Min Kang ,  Hyung Sup Yoon ,  Hea Cheon Kim ,  Kyoung Ik Cho

    IPC分类号： H03F3/189 ,  H03F3/60 ,  H03F3/68 ,  H03F3/191

    CPC分类号： H03F3/605

    摘要： A microwave power amplifier comprising a drive amplifying stage includes power elements, gate and drain bias circuits of the power elements, a RC parallel circuit connected between input port and gates of said power elements, a shunt resistor connected between ground terminal and said gates of power elements, and a negative feedback circuit connected in series with resistors and capacitors and in parallel with the power elements. An interstage matching circuit is connected in series with the drive amplifying stage; and a power amplifying stage including power elements connected in parallel with a power divider and a power coupler, gate and drain bias circuits of said power elements, a RC parallel circuit connected between the gates of power elements and the interstage matching circuit, and a shunt resistor connected between a ground and the gates of power elements.

    摘要翻译： 包括驱动放大级的微波功率放大器包括功率元件，功率元件的栅极和漏极偏置电路，连接在所述功率元件的输入端口和栅极之间的RC并联电路，连接在接地端子和所述功率门之间的分流电阻器 元件和与电阻器和电容器串联连接并与功率元件并联的负反馈电路。 级间匹配电路与驱动放大级串联; 以及功率放大级，包括与功率分配器和功率耦合器并联连接的功率元件，所述功率元件的栅极和漏极偏置电路，连接在功率元件的栅极和级间匹配电路之间的RC并联电路，以及分流器 电阻连接在地和功率元件的门之间。