Abstract:
Semiconductor devices and methods of manufacture thereof are disclosed that are capable of preventing a short of lower electrodes caused by a leaning or lifting phenomenon while forming the lower electrodes and securing enough capacitance of a capacitor by widening an effective capacitor area. The inventive semiconductor device includes: a plurality of capacitor plugs disposed in an orderly separation distance; and a plurality of lower electrodes used for a capacitor and disposed in an orderly separation distance to be respectively connected with the capacitor plugs.
Abstract:
A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that is vertical to a top surface of the substrate, a plurality of gate lines stacked on top of each other on the substrate, a plurality of wiring over the gate lines and electrically connected to the gate lines, and an identification pattern on the substrate at the same level as a level of at least one of the wirings. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction.
Abstract:
A battery pack includes: a bare cell; a protection circuit module electrically connected to the bare cell; a thermistor configured to sense a temperature of the bare cell and electrically coupled to the protection circuit module, the thermistor having a lead, the lead having a lead end portion adjacent to the protection circuit module, the lead end portion having a first side facing the protection circuit module; and a support between the first side of the lead end portion and the protection circuit module.
Abstract:
Disclosed are a light scanning unit and an electrophotographic image forming apparatus including the light scanning unit. The light scanning unit may include a light source emitting a light beam, a beam deflector that deflects and scans the light beam emitted from the light source in a main scanning direction, a scanning optical system forming an image of a first portion of the light beam that is deflected and scanned by the beam deflector on a scanning surface and a beam detection sensor receiving a second portion of the light beam that is deflected and scanned by the beam deflector for generating a synchronization signal. The beam detection sensor may include a light receiving surface for receiving the second portion of the light beam, and at least two output terminals that are arranged outside an area of the light receiving surface within which the incident second portion of the light beam is confined.
Abstract:
A character input mode of a mobile terminal permits easier viewing of characters being entered on a virtual keyboard. An apparatus and a method permitting detection of misprinted/omitted character when performing a special character input mode An output manager outputs a character input screen including a virtual keyboard region and a character input field region when entering a character input mode, and outputs an auxiliary character input field showing information of currently input data on the virtual keyboard region. A display unit outputs the auxiliary character input field, the character input field, and the virtual keyboard. When an input of the virtual keyboard is detected, the output manager outputs information of data corresponding to an input position on the character input field and the auxiliary character input field. The character input mode preferably includes a mode for inputting at least one of text data, symbol data, and emoticon data.
Abstract:
An electronic relay includes: a housing having an interior space therein and a lateral side and a lower side of which are opened, a board installation part being formed along a periphery of the opened side of the housing; a printed circuit board a periphery of which is inserted into and installed in the board installation part of the housing, for shielding the opened side of the housing and performing a switching function; a lower cover for shielding a lower side of the housing, one side edge of the printed circuit board being fixed to the lower cover; and terminals ends of which are electrically connected to the printed circuit board and opposite ends of which pass through the lower cover to protrude to the outside.
Abstract:
There is provided a processing method of an inspection system for paint coated film of steel bridge using image processing technique comprising: a paint coated film image storing process that stores in a data base (DB) unit a paint coated film image information of a steel bridge photographed by the inspection system; a paint coated film information loading process that loads paint coated film image information through calling a file containing the paint coated film image information to be inspected which is stored in the DB unit; a scale and rust extracting process that displays a scale part and a rust part on an output unit after detecting the rust part and the scale part by an image processing process of the inspection system for paint coated film and storing a calculated percentage of deteriorated are in the DB unit; and a repainting information calculating process that calculates a time for repainting and provide an optimum method for paint coating by deteriorated image information of paint coated film.
Abstract:
Provided are a heterojunction bipolar transistor and a method of forming the same. The method includes forming an emitter electrode on an emitter capping pattern, a base electrode on a base pattern, and a collector electrode on a subcollector pattern, the subcollector pattern, the base pattern, an emitter pattern, and the emitter capping pattern being provided to a substrate; patterning a protection insulation layer and a first dummy pattern covering the emitter electrode, the base electrode, and the collector electrode, to expose the emitter electrode, the base electrode, and the collector electrode; forming a second dummy pattern to electrically separate the emitter electrode, the base electrode, and the collector electrode; forming, on the substrate provided with the second dummy pattern, an emitter electrode interconnection connected to the emitter electrode, a base electrode interconnection connected to the base electrode, and a collector electrode interconnection connected to the collector electrode; and removing the first and second dummy patterns.
Abstract:
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from locally agglomerating; forming an impurity undoped second amorphous silicon layer on the first amorphous silicon layer in an in-situ condition; forming a storage node by patterning the first amorphous silicon layer and the second amorphous silicon layer; forming silicon grains on a surface of the storage node; and doping the impurity to the storage node and the silicon grains until reaching a second predetermined concentration for providing conductivity required by the storage node.
Abstract:
A semiconductor device may include plugs disposed in a zigzag pattern, interconnections electrically connected to the plugs and a protection pattern which is interposed between the plugs and the interconnections to selectively expose the plugs. The interconnections may include a connection portion which is in contact with plugs selectively exposed by the protection pattern. A method of manufacturing a semiconductor device includes, after forming a molding pattern and a mask pattern, selectively etching a protection layer using the mask pattern to form a protection pattern exposing a plug.