公开(公告)号：US20050059241A1

公开(公告)日：2005-03-17

申请号：US10951354

申请日：2004-09-29

申请人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

公开(公告)号：US06096135A

公开(公告)日：2000-08-01

申请号：US120005

申请日：1998-07-21

申请人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

发明人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  H01L21/205 ,  H01L21/68 ,  H01L21/683 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/67109 ,  H01L21/68 ,  H01L21/6838

摘要： Method and apparatus for reducing contamination of a substrate in a substrate processing system. The apparatus has a substrate support, a gas directing shield circumscribing the substrate support and a shadow ring disposed vertically above the substrate support and gas directing shield for retaining the substrate. The gas directing shield and substrate support define an annular channel that is provided with an edge purge gas. The edge purge gas imparts a force at the edge of a substrate resting on the substrate support the lifts it off the substrate supports and against the shadow ring. The shadow ring further has a plurality of conduits extending from its upper surface to its sidewall to provide a path for the edge purge gas to vent and to impede the flow of process gases under the backside and around the edge of the substrate. The method includes the steps of providing a substrate upon the substrate support, applying a first flow of gas to a first set of ports to lift the substrate off of the substrate support, centering the substrate upon the substrate support and applying a second flow of gas to a second set of ports to establish and maintain thermal control of the substrate.

摘要翻译： 用于减少衬底处理系统中衬底污染的方法和装置。 该装置具有衬底支撑件，围绕衬底支撑件的气体导向屏蔽件和垂直设置在衬底支撑件上方的阴影环和用于保持衬底的气体导向屏蔽件。 气体导向屏蔽和衬底支撑件限定了设置有边缘吹扫气体的环形通道。 边缘吹扫气体在搁置在基板支撑件上的基板的边缘处施加力，将其从基板支撑件提升并抵靠阴影环。 阴影环还具有从其上表面延伸到其侧壁的多个导管，以提供用于边缘吹扫气体排出并阻止在衬底的背侧和周围的处理气体流动的路径。 该方法包括以下步骤：在衬底支撑件上提供衬底，将第一气体流施加到第一组端口以将衬底提升离开衬底支撑件，使衬底对准衬底支撑件并施加第二气体流 到第二组端口以建立和保持基板的热控制。

公开(公告)号：US5968276A

公开(公告)日：1999-10-19

申请号：US893859

申请日：1997-07-11

申请人： Lawrence Lei ,  Son Trinh ,  Mark Johnson

发明人： Lawrence Lei ,  Son Trinh ,  Mark Johnson

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45572

摘要： The present invention provides a method and apparatus for improving thermal management of gas being delivered to a chemical vapor deposition chamber. Thermal management is accomplished using a heat transfer fluid in thermal communication with the deposition gas passageways delivering the gases to the chamber for deposition. The gas injection manifold includes gas passageways and coolant liquid passageways, wherein the gas passageways extend through a constant voltage gradient gas feedthrough and the coolant liquid passageways extend through a gas input manifold coupled to the inlet end of the constant voltage gradient gas feedthrough. This arrangement provides for increase coolant liquid flow and allows maintenance or disassembly of the constant voltage gradient gas feedthrough without breaking the seal on the coolant liquid system.

摘要翻译： 本发明提供一种用于改善被输送到化学气相沉积室的气体的热管理的方法和装置。 使用与沉积气体通道热连通的传热流体将气体输送到室以进行沉积来实现热管理。 气体注入歧管包括气体通道和冷却剂液体通道，其中气体通道延伸通过恒定电压梯度气体馈通，并且冷却剂液体通道延伸通过耦合到恒定电压梯度气体馈通的入口端的气体输入歧管。 这种布置提供了增加冷却剂液体流量并允许恒定电压梯度气体馈通的维护或拆卸而不破坏冷却剂液体系统上的密封。