公开(公告)号：US06374512B1

公开(公告)日：2002-04-23

申请号：US09631051

申请日：2000-08-01

申请人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

发明人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

IPC分类号： F26B308

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/67109 ,  H01L21/68 ,  H01L21/6838

摘要： Method and apparatus for reducing contamination of a substrate in a substrate processing system. The apparatus has a substrate support, a gas directing shield circumscribing the substrate support and a shadow ring disposed vertically above the substrate support and gas directing shield for retaining the substrate. The gas directing shield and substrate support define an annular channel that is provided with an edge purge gas. The edge purge gas imparts a force at the edge of a substrate resting on the substrate support the lifts it off the substrate supports and against the shadow ring. The shadow ring further has a plurality of conduits extending from its upper surface to its sidewall to provide a path for the edge purge gas to vent and to impede the flow of process gases under the backside and around the edge of the substrate. The method includes the steps of providing a substrate upon the substrate support, applying a first flow of gas to a first set of ports to lift the substrate off of the substrate support, centering the substrate upon the substrate support and applying a second flow of gas to a second set of ports to establish and maintain thermal control of the substrate.

摘要翻译： 用于减少衬底处理系统中衬底污染的方法和装置。 该装置具有衬底支撑件，围绕衬底支撑件的气体导向屏蔽件和垂直设置在衬底支撑件上方的阴影环和用于保持衬底的气体导向屏蔽件。 气体导向屏蔽和衬底支撑件限定了设置有边缘吹扫气体的环形通道。 边缘吹扫气体在搁置在基板支撑件上的基板的边缘处施加力，将其从基板支撑件提升并抵靠阴影环。 阴影环还具有从其上表面延伸到其侧壁的多个导管，以提供用于边缘吹扫气体排出并阻止在衬底的背面和周围的处理气体流动的路径。 该方法包括以下步骤：在衬底支撑件上提供衬底，将第一气体流施加到第一组端口以将衬底提升离开衬底支撑件，使衬底对准衬底支撑件并施加第二气体流 到第二组端口以建立和保持基板的热控制。

公开(公告)号：US06096135A

公开(公告)日：2000-08-01

申请号：US120005

申请日：1998-07-21

申请人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

发明人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  H01L21/205 ,  H01L21/68 ,  H01L21/683 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/67109 ,  H01L21/68 ,  H01L21/6838

摘要： Method and apparatus for reducing contamination of a substrate in a substrate processing system. The apparatus has a substrate support, a gas directing shield circumscribing the substrate support and a shadow ring disposed vertically above the substrate support and gas directing shield for retaining the substrate. The gas directing shield and substrate support define an annular channel that is provided with an edge purge gas. The edge purge gas imparts a force at the edge of a substrate resting on the substrate support the lifts it off the substrate supports and against the shadow ring. The shadow ring further has a plurality of conduits extending from its upper surface to its sidewall to provide a path for the edge purge gas to vent and to impede the flow of process gases under the backside and around the edge of the substrate. The method includes the steps of providing a substrate upon the substrate support, applying a first flow of gas to a first set of ports to lift the substrate off of the substrate support, centering the substrate upon the substrate support and applying a second flow of gas to a second set of ports to establish and maintain thermal control of the substrate.

摘要翻译： 用于减少衬底处理系统中衬底污染的方法和装置。 该装置具有衬底支撑件，围绕衬底支撑件的气体导向屏蔽件和垂直设置在衬底支撑件上方的阴影环和用于保持衬底的气体导向屏蔽件。 气体导向屏蔽和衬底支撑件限定了设置有边缘吹扫气体的环形通道。 边缘吹扫气体在搁置在基板支撑件上的基板的边缘处施加力，将其从基板支撑件提升并抵靠阴影环。 阴影环还具有从其上表面延伸到其侧壁的多个导管，以提供用于边缘吹扫气体排出并阻止在衬底的背侧和周围的处理气体流动的路径。 该方法包括以下步骤：在衬底支撑件上提供衬底，将第一气体流施加到第一组端口以将衬底提升离开衬底支撑件，使衬底对准衬底支撑件并施加第二气体流 到第二组端口以建立和保持基板的热控制。

公开(公告)号：US06296712B1

公开(公告)日：2001-10-02

申请号：US09055689

申请日：1998-04-06

申请人： Xin Sheng Guo ,  Mohan Bhan ,  Justin Jones ,  Lawrence Lei ,  Russell Ellwanger ,  Mei Chang ,  Ashok Sinha ,  Avi Tepman

发明人： Xin Sheng Guo ,  Mohan Bhan ,  Justin Jones ,  Lawrence Lei ,  Russell Ellwanger ,  Mei Chang ,  Ashok Sinha ,  Avi Tepman

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/68735

摘要： The invention provides a substrate support member and a purge guide for directing purge gas past the edge of a substrate and towards the outer perimeter of the chamber. The purge guide includes a plurality of holes disposed around the inner perimeter thereof to provide a purge gas passage and to prevent purge gas from interfering with the deposition chemistry on the surface of the substrate. A substrate support member is also provided having a vacuum chuck for securing a substrate to the upper surface thereof. The substrate support member preferably includes a shoulder on which the purge guide is supported during processing. The invention also provides a method for shielding an edge of a substrate by flowing a purge gas adjacent the edge of the substrate and then through a plurality of purge holes on a purge guide.

摘要翻译： 本发明提供了一种用于引导吹扫气体穿过衬底的边缘并且朝向腔室的外周边的衬底支撑构件和吹扫引导件。 吹扫引导件包括围绕其内周围设置的多个孔，以提供净化气体通道并防止吹扫气体干扰衬底表面上的沉积化学。 还提供了具有用于将基板固定到其上表面的真空卡盘的基板支撑构件。 衬底支撑构件优选地包括在处理期间支撑清洗引导件的肩部。 本发明还提供了一种用于通过使靠近衬底边缘的吹扫气体流过清洗引导件上的多个吹扫孔来屏蔽衬底边缘的方法。

公开(公告)号：US20060223286A1

公开(公告)日：2006-10-05

申请号：US11423535

申请日：2006-06-12

申请人： Barry Chin ,  Alfred Mak ,  Lawrence Lei ,  Ming Xi ,  Hua Chung ,  Ken Lai ,  Jeong Byun

发明人： Barry Chin ,  Alfred Mak ,  Lawrence Lei ,  Ming Xi ,  Hua Chung ,  Ken Lai ,  Jeong Byun

IPC分类号： C23C16/00 ,  H01L21/20

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

公开(公告)号：US20070040265A1

公开(公告)日：2007-02-22

申请号：US11506460

申请日：2006-08-17

申请人： Salvador Umotoy ,  Lawrence Lei ,  Gwo-Chuan Tzu ,  Xiaoxiong Yuan ,  Michael Jackson ,  Hymam Lam

发明人： Salvador Umotoy ,  Lawrence Lei ,  Gwo-Chuan Tzu ,  Xiaoxiong Yuan ,  Michael Jackson ,  Hymam Lam

IPC分类号： H01L23/12

CPC分类号： H01L21/67103 ,  C23C16/45521 ,  C23C16/4586 ,  C23C16/466 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785

摘要： A substrate support comprises top, middle and bottom plates which are brazed together. The top plate has a top surface with a plurality of outwardly projecting mesas dispersed across a recessed pocket, a network of recessed grooves, a vacuum port terminating in the recessed grooves, and plurality of gas ports. The middle plate has a plurality of middle feedthroughs aligned to corresponding top feedthroughs of the top plate, and the bottom plate has a plurality of bottom feedthroughs aligned to the middle feedthroughs of the middle plate. The top and middle plates are joined by a first brazed bond layer and the middle and bottom plates are joined by a second brazed bond layer.

摘要翻译： 衬底支撑件包括钎焊在一起的顶板，中板和底板。 顶板具有顶表面，多个向外突出的台面分散在凹槽中，凹槽网络，终止于凹槽中的真空端口以及多个气体端口。 中间板具有与顶板的相应的顶部馈通对准的多个中间馈通，并且底板具有与中间板的中间馈通对准的多个底部馈通。 顶板和中间板通过第一钎焊接合层连接，中间和底板通过第二钎焊接合层连接。

公开(公告)号：US20050271814A1

公开(公告)日：2005-12-08

申请号：US11198140

申请日：2005-08-05

申请人： Mei Chang ,  Lawrence Lei ,  Walter Glenn

发明人： Mei Chang ,  Lawrence Lei ,  Walter Glenn

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67167 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/6719

摘要： A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

公开(公告)号：US20050083048A1

公开(公告)日：2005-04-21

申请号：US10970351

申请日：2004-10-21

申请人： Lawrence Lei ,  Chen-An Chen

发明人： Lawrence Lei ,  Chen-An Chen

IPC分类号： B44C1/22 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12 ,  G01B7/06 ,  H01L21/00

CPC分类号： G01B7/105 ,  C25D7/123 ,  C25D17/00 ,  C25D21/12 ,  H01L21/67253

摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, and at least one substrate inspection station positioned on either the mainframe or in the loading station. The inspection station is generally configured to use an eddy current sensing device to determine the thickness of a conductive layer on the substrate.

摘要翻译： 本发明的实施方案通常提供电化学电镀系统。 电镀系统包括定位成与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元以及位于大型机或装载站中的至少一个基板检查站。 检查站通常被配置为使用涡流检测装置来确定衬底上的导电层的厚度。

公开(公告)号：US20080044568A1

公开(公告)日：2008-02-21

申请号：US11877490

申请日：2007-10-23

申请人： Lawrence Lei ,  Siqing Lu

发明人： Lawrence Lei ,  Siqing Lu

IPC分类号： C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/45563 ,  C23C16/45578

摘要： Techniques of the present invention are directed to reducing clogging of nozzles. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and a distal portion oriented inwardly away from the chamber wall into an interior of the semiconductor processing chamber. The nozzle includes a proximal end coupled with a gas supply, a nozzle opening at a distal end, and a heat shield disposed around at least a portion of the nozzle opening. A nozzle passage extends from the proximal end to the distal end. The method further comprises flowing a gas from the gas supply through the proximal end, the nozzle passage, and the nozzle opening of the nozzle into the interior of the semiconductor processing chamber.

摘要翻译： 本发明的技术涉及减少喷嘴堵塞。 在一个实施例中，将气体引入半导体处理室的方法包括提供喷嘴，该喷嘴具有连接到半导体处理室的室壁或气体分配环的近端部分，以及远离室壁向内取向的远侧部分 半导体处理室的内部。 喷嘴包括与气体供应联接的近端，在远端处的喷嘴开口和围绕喷嘴开口的至少一部分设置的热屏蔽。 喷嘴通道从近端延伸到远端。 该方法还包括将来自气体供应的气体通过近端，喷嘴通道和喷嘴的喷嘴开口流入半导体处理室的内部。

公开(公告)号：US20060048707A1

公开(公告)日：2006-03-09

申请号：US10934213

申请日：2004-09-03

申请人： Lawrence Lei ,  Siqing Lu

发明人： Lawrence Lei ,  Siqing Lu

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/45563 ,  C23C16/45578

摘要： Techniques of the present invention are directed to reducing clogging of nozzles. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and a distal portion oriented inwardly away from the chamber wall into an interior of the semiconductor processing chamber. The nozzle includes a proximal end coupled with a gas supply, a nozzle opening at a distal end, and a heat shield disposed around at least a portion of the nozzle opening. A nozzle passage extends from the proximal end to the distal end. The method further comprises flowing a gas from the gas supply through the proximal end, the nozzle passage, and the nozzle opening of the nozzle into the interior of the semiconductor processing chamber.

摘要翻译： 本发明的技术涉及减少喷嘴堵塞。 在一个实施例中，将气体引入半导体处理室的方法包括提供喷嘴，该喷嘴具有连接到半导体处理室的室壁或气体分配环的近端部分，以及远离室壁向内取向的远侧部分 半导体处理室的内部。 喷嘴包括与气体供应联接的近端，在远端处的喷嘴开口和围绕喷嘴开口的至少一部分设置的热屏蔽。 喷嘴通道从近端延伸到远端。 该方法还包括将来自气体供应的气体通过近端，喷嘴通道和喷嘴的喷嘴开口流入半导体处理室的内部。

公开(公告)号：US20050218115A1

公开(公告)日：2005-10-06

申请号：US11080387

申请日：2005-03-14

申请人： Lawrence Lei ,  Siqing Lu ,  Steven Gianoulakis ,  Irene Chou ,  David Sun

发明人： Lawrence Lei ,  Siqing Lu ,  Steven Gianoulakis ,  Irene Chou ,  David Sun

IPC分类号： G01L21/30 ,  H01L21/302

CPC分类号： C23C16/45563

摘要： Embodiments of the present invention are directed to reducing clogging of nozzles and to reducing flow variance through the nozzles in a semiconductor processing chamber. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and a distal portion oriented inwardly away from the chamber wall into an interior of the semiconductor processing chamber. The nozzle includes a proximal end coupled with a gas supply. The nozzle includes a nozzle opening at a distal end. The nozzle includes a nozzle passage extending from the proximal end to the distal end. The method further comprises flowing a gas from the gas supply through the proximal end, the nozzle passage, and the nozzle opening of the nozzle into the interior of the semiconductor processing chamber; and choking the gas flow through the nozzle passage at a choke location which is spaced away from the distal end.

摘要翻译： 本发明的实施例涉及减少喷嘴堵塞和减少半导体处理室中的喷嘴的流动变化。 在一个实施例中，将气体引入半导体处理室的方法包括提供喷嘴，该喷嘴具有连接到半导体处理室的室壁或气体分配环的近端部分，以及远离室壁向内取向的远侧部分 半导体处理室的内部。 喷嘴包括与气体供应连接的近端。 喷嘴包括在远端的喷嘴开口。 喷嘴包括从近端延伸到远端的喷嘴通道。 该方法还包括使气体从气体供应通过喷嘴的近端，喷嘴通道和喷嘴开口流入半导体处理室的内部; 并且在与远端间隔开的扼流位置处阻塞气体流过喷嘴通道。