Sulfonium salt-containing polymer, resist composition, and patterning process
    22.
    发明授权
    Sulfonium salt-containing polymer, resist composition, and patterning process 有权
    含锍盐的聚合物,抗蚀剂组合物和图案化工艺

    公开(公告)号:US08048610B2

    公开(公告)日:2011-11-01

    申请号:US12428933

    申请日:2009-04-23

    摘要: A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.

    摘要翻译: 提供了包含具有式(1),(2)和(3)的重复单元的聚合物以及包含其的化学放大抗蚀剂组合物。 R 1是H,F,CH 3或CF 3,R f是H,F,CF 3或C 2 F 5,A是任选氟或氧取代的二价有机基团,R 2,R 3和R 4是烷基,烯基,氧代烷基,芳基,芳烷基或芳氧基烷基 或者可以与硫原子形成环,N = O-2,R 8是H或烷基,B是单键或任选的氧取代的二价有机基团,a = 0-3,b = 1-3,和 X是酸不稳定组。 该聚合物产生强的磺酸,其提供化学增强抗蚀剂组合物中酸不稳定基团的有效切割。

    PATTERNING PROCESS AND RESIST COMPOSITION
    24.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 有权
    绘图工艺和耐腐蚀组合物

    公开(公告)号:US20110033803A1

    公开(公告)日:2011-02-10

    申请号:US12849344

    申请日:2010-08-03

    IPC分类号: G03F7/004 G03F7/20

    摘要: A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.

    摘要翻译: 通过将包含含内含重复单元,含酸不稳定基团的重复单元和含氨基甲酸酯的重复单元的共聚物和光致酸产生剂的第一正性抗蚀剂组合物涂布在基材上以形成第一抗蚀剂膜,形成图案形成图案 曝光,PEB和显影以形成第一抗蚀剂图案,将第一抗蚀剂图案加热至酸失活,将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂布到第一抗蚀剂图案承载基底上 以形成第二抗蚀剂膜,图案曝光,PEB和显影以形成第二抗蚀剂图案。

    Thermal acid generator, resist undercoat material and patterning process
    25.
    发明授权
    Thermal acid generator, resist undercoat material and patterning process 有权
    热酸发生器,抗蚀底漆材料和图案化工艺

    公开(公告)号:US07514202B2

    公开(公告)日:2009-04-07

    申请号:US11797948

    申请日:2007-05-09

    IPC分类号: G03F7/004 G03F7/30 C07C309/06

    摘要: A thermal acid generator of generating an acid on heating above 100° C. has formula: CF3CH(OCOR)CF2SO3−(R1)4N+ wherein R is alkyl or aryl, R1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R1 may bond together to form a ring with N. The sulfonic acid generated possesses an ester site within molecule so that less bulky acyl groups to bulky groups may be incorporated therein. The thermal acid generator provides a sufficient acid strength, is less volatile due to a high molecular weight, and ensures film formation. Upon disposal of used resist liquid, it may be converted into low accumulative compounds.

    摘要翻译: 一种在100℃以上加热生成酸的热酸发生剂具有式:CF 3 CH(OCOR)CF 2 SO 3 - (R 1)4 N +,其中R是烷基或芳基,R 1是氢,烷基,链烯基,氧代烷基,芳基,芳烷基或芳氧基烷基 ,或者R1可以键合在一起形成具有N的环。产生的磺酸在分子内具有酯位点,从而可以在其中引入较大体积的大体积基团的酰基。 热酸发生器提供足够的酸强度,由于高分子量而挥发性较低,并且确保成膜。 在处理使用过的抗蚀剂液体时,可以将其转化为低浓度的化合物。

    Resist composition
    27.
    发明授权
    Resist composition 有权
    抗蚀组成

    公开(公告)号:US06916593B2

    公开(公告)日:2005-07-12

    申请号:US10615683

    申请日:2003-07-09

    IPC分类号: G03F7/004 G03F7/039

    摘要: Although use of a nitrogen-containing compound as a basic compound component of a resist composition makes it possible to ease the T-top problem at an acid dissociation constant pKa falling within a range of 2 to 6, it is accompanied with the problem that the reaction, that is, acid diffusion upon use of a highly-reactive acid-labile group cannot be controlled. In order to overcome this problem, one or more basic compounds selected from those represented by the following formulas (I) to (III) and (1) to (4) are employed.

    摘要翻译: 尽管使用含氮化合物作为抗蚀剂组合物的碱性化合物组分可以使酸解离常数pKa在2至6的范围内缓解T顶部问题,但是伴随着如下问题: 反应,即使用高反应性酸不稳定基团时的酸扩散是不能控制的。 为了克服这个问题,使用一种或多种选自由下式(I)至(III)和(1)至(4)表示的化合物的碱性化合物。

    Resist compositions and patterning process
    28.
    发明授权
    Resist compositions and patterning process 有权
    抗蚀剂组合物和图案化工艺

    公开(公告)号:US06541179B2

    公开(公告)日:2003-04-01

    申请号:US09811695

    申请日:2001-03-20

    IPC分类号: G03F7004

    摘要: A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1). R1 is a monovalent cyclic or bridgedring C3-20, hydrocarbon group, R2 is hydroxyl, nitro, halogen, or a straight, branched or cyclic monovalent C1-15 hydrocarbon group which may contain O, N, S or halogen atom, K− is a non-nucleophilic counter ion, x is equal to 1 or 2, and y is an integer of 0-3. The resist composition is sensitive to ArF excimer laser light, has good sensitivity and resolution, and forms a thick film which is advantageous in etching.

    摘要翻译: 抗蚀剂组合物含有基础树脂,光致酸产生剂和溶剂。 光致酸产生剂是式(1)的锍盐,R1是一价环状或桥连的C3-20,烃基,R2是羟基,硝基,卤素或直链,支链或环状的一价C1-15烃基,其可以 含有O,N,S或卤原子,K-是非亲核反离子,x等于1或2,y是0-3的整数。 抗蚀剂组合物对ArF准分子激光敏感,具有良好的灵敏度和分辨率,并形成有利于蚀刻的厚膜。

    Patterning process and resist composition
    30.
    发明授权
    Patterning process and resist composition 有权
    图案化过程和抗蚀剂组成

    公开(公告)号:US08426115B2

    公开(公告)日:2013-04-23

    申请号:US12849344

    申请日:2010-08-03

    摘要: A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.

    摘要翻译: 通过将包含含内含重复单元,含酸不稳定基团的重复单元和含氨基甲酸酯的重复单元的共聚物和光致酸产生剂的第一正性抗蚀剂组合物涂布在基材上以形成第一抗蚀剂膜,形成图案形成图案 曝光,PEB和显影以形成第一抗蚀剂图案,将第一抗蚀剂图案加热至酸失活,将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂布到第一抗蚀剂图案承载基底上 以形成第二抗蚀剂膜,图案曝光,PEB和显影以形成第二抗蚀剂图案。