公开(公告)号：US20100120202A1

公开(公告)日：2010-05-13

申请号：US12610873

申请日：2009-11-02

申请人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

发明人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

IPC分类号： H01L21/78 ,  H01L21/50

CPC分类号： B81C1/00666 ,  H01L23/562 ,  H01L24/16 ,  H01L24/31 ,  H01L24/48 ,  H01L24/95 ,  H01L29/0657 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83365 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3511 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A method of forming an integrated circuit structure including providing a wafer comprising a front surface and a back surface, wherein the wafer comprises a chip; forming an opening extending from the back surface into the chip; filling an organic material in the opening, wherein substantially no portion of the organic material is outside of the opening and on the back surface of the wafer; and baking the organic material to cause a contraction of the organic material.

摘要翻译： 一种形成集成电路结构的方法，包括提供包括前表面和后表面的晶片，其中所述晶片包括芯片; 形成从后表面延伸到芯片中的开口; 在开口中填充有机材料，其中基本上没有部分有机材料在晶片的开口和背面之外; 并烘烤有机材料以引起有机材料的收缩。

公开(公告)号：US08106470B2

公开(公告)日：2012-01-31

申请号：US12751633

申请日：2010-03-31

申请人： Ting-Hau Wu ,  Chun-Wen Cheng ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee ,  Allen Timothy Chang

发明人： Ting-Hau Wu ,  Chun-Wen Cheng ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee ,  Allen Timothy Chang

IPC分类号： H01L21/32

CPC分类号： G01P15/18 ,  G01P15/125 ,  G01P2015/082 ,  G01P2015/084 ,  H01L28/86

摘要： An integrated circuit structure includes a substrate having a top surface; a first conductive layer over and contacting the top surface of the substrate; a dielectric layer over and contacting the first conductive layer, wherein the dielectric layer includes an opening exposing a portion of the first conductive layer; and a proof-mass in the opening and including a second conductive layer at a bottom of the proof-mass. The second conductive layer is spaced apart from the portion of the first conductive layer by an air space. Springs anchor the proof-mass to portions of the dielectric layer encircling the opening. The springs are configured to allow the proof-mass to make three-dimensional movements.

摘要翻译： 集成电路结构包括具有顶表面的基板; 在衬底的顶表面上方并接触第一导电层; 电介质层，其与所述第一导电层接触并接触，其中所述电介质层包括露出所述第一导电层的一部分的开口; 并且在开口中具有证明质量，并且包括在质量块的底部的第二导电层。 第二导电层通过空气间隔与第一导电层的部分间隔开。 弹簧将证明质量锚定到围绕开口的介电层的部分。 弹簧被配置为允许证明物质进行三维运动。

公开(公告)号：US08053377B2

公开(公告)日：2011-11-08

申请号：US12892190

申请日：2010-09-28

申请人： Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Ting-Hau Wu

发明人： Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Ting-Hau Wu

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： B41J2/16 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B81B2201/052 ,  B81C1/00666 ,  B81C2201/017 ,  B81C2201/053

摘要： System and method for forming a structure including a MEMS device structure. In order to prevent warpage of a substrate arising from curing process for a sacrificial material (such as a photoresist), and from subsequent high temperature process steps, an improved sacrificial material comprises (i) a polymer and (ii) a foaming agent or special function group. The structure can be formed by forming a trench in a substrate and filling the trench with a sacrificial material. The sacrificial material includes (i) a polymer and (ii) a foaming agent or special function group. After further process steps are completed, the sacrificial material is removed from the trench.

摘要翻译： 用于形成包括MEMS器件结构的结构的系统和方法。 为了防止由牺牲材料（例如光致抗蚀剂）的固化过程引起的基板翘曲，以及随后的高温工艺步骤，改进的牺牲材料包括（i）聚​​合物和（ii）发泡剂或特殊的 功能组。 可以通过在衬底中形成沟槽并用牺牲材料填充沟槽来形成结构。 牺牲材料包括（i）聚​​合物和（ii）发泡剂或特殊功能组。 在完成进一步的工艺步骤之后，将牺牲材料从沟槽中移除。

公开(公告)号：US20100258883A1

公开(公告)日：2010-10-14

申请号：US12692118

申请日：2010-01-22

申请人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee

发明人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee

IPC分类号： H01L29/84 ,  H01L23/52

CPC分类号： B81C1/00095 ,  B81B2203/0384

摘要： A metal-ceramic multilayer structure is provided. The underlying layers of the metal/ceramic multilayer structure have sloped sidewalls such that cracking of the metal-ceramic multilayer structure may be reduced or eliminated. In an embodiment, a layer immediately underlying the metal-ceramic multilayer has sidewalls sloped less than 75 degrees. Subsequent layers underlying the layer immediately underlying the metal/ceramic layer have sidewalls sloped greater than 75 degrees. In this manner, less stress is applied to the overlying metal/ceramic layer, particularly in the corners, thereby reducing the cracking of the metal-ceramic multilayer. The metal/ceramic multilayer structure includes one or more alternating layers of a metal seed layer and a ceramic layer.

摘要翻译： 提供了一种金属陶瓷多层结构。 金属/陶瓷多层结构的下层具有倾斜的侧壁，从而可以减少或消除金属 - 陶瓷多层结构的开裂。 在一个实施例中，紧邻金属陶瓷多层的底层的侧壁倾斜小于75度。 紧邻金属/陶瓷层下面的层下面的后续层具有倾斜大于75度的侧壁。 以这种方式，对上覆的金属/陶瓷层，特别是在角部施加较小的应力，从而减少金属 - 陶瓷多层的开裂。 金属/陶瓷多层结构包括金属种子层和陶瓷层的一个或多个交替层。

公开(公告)号：US20100203664A1

公开(公告)日：2010-08-12

申请号：US12619542

申请日：2009-11-16

申请人： Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jung-Huei Peng ,  Jiou-Kang Lee ,  Ting-Hau Wu

发明人： Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jung-Huei Peng ,  Jiou-Kang Lee ,  Ting-Hau Wu

IPC分类号： H01L21/30 ,  H01L21/28

CPC分类号： B81C1/00595

摘要： When a native oxide grows on a polysilicon member of, e.g., a MEMS device, delamination between the polysilicon member and subsequently formed layers may occur because the native oxide is undercut during removal of sacrificial oxide layers. Nitriding the native oxide increases the etch selectivity relative the sacrificial oxide layers. Undercutting and delamination is hence reduced or eliminated altogether.

摘要翻译： 当天然氧化物在例如MEMS器件的多晶硅构件上生长时，可能会发生多晶硅构件和随后形成的层之间的分层，因为在去除牺牲氧化物层期间天然氧化物被切削。 氮化自然氧化物相对于牺牲氧化物层增加蚀刻选择性。 因此，底切和分层完全减少或消除。

公开(公告)号：US08362578B2

公开(公告)日：2013-01-29

申请号：US12751598

申请日：2010-03-31

申请人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jiou-Kang Lee ,  Jung-Huei Peng

发明人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jiou-Kang Lee ,  Jung-Huei Peng

IPC分类号： H01L29/84

CPC分类号： B81C1/00134 ,  G01P15/125 ,  G01P15/18

摘要： An integrated circuit structure includes a triple-axis accelerometer, which further includes a proof-mass formed of a semiconductor material; a first spring formed of the semiconductor material and connected to the proof-mass, wherein the first spring is configured to allow the proof-mass to move in a first direction in a plane; and a second spring formed of the semiconductor material and connected to the proof-mass. The second spring is configured to allow the proof-mass to move in a second direction in the plane and perpendicular to the first direction. The triple-axis accelerometer further includes a conductive capacitor plate including a portion directly over, and spaced apart from, the proof-mass, wherein the conductive capacitor plate and the proof-mass form a capacitor; an anchor electrode contacting a semiconductor region; and a transition region connecting the anchor electrode and the conductive capacitor plate, wherein the transition region is slanted.

摘要翻译： 集成电路结构包括三轴加速度计，其还包括由半导体材料形成的校准质量; 由所述半导体材料形成并连接到所述证明块的第一弹簧，其中所述第一弹簧被构造成允许所述证明物质在平面中沿第一方向移动; 以及由半导体材料形成并连接到校验块的第二弹簧。 第二弹簧被构造成允许证明物质在平面中并且垂直于第一方向在第二方向上移动。 三轴加速度计进一步包括导电电容器板，其包括直接在其上并与隔离物隔开的部分，其中导电电容器板和校验块形成电容器; 与半导体区域接触的锚定电极; 以及连接所述锚定电极和所述导电电容器板的过渡区域，其中所述过渡区域是倾斜的。

公开(公告)号：US08218286B2

公开(公告)日：2012-07-10

申请号：US12347046

申请日：2008-12-31

申请人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

发明人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Jung-Huei Peng

IPC分类号： H01G4/228 ,  H04R25/00 ,  H04R19/00

CPC分类号： H04R19/005 ,  H04R19/04 ,  H04R2201/003

摘要： An integrated circuit structure includes a capacitor, which further includes a first capacitor plate formed of polysilicon, and a second capacitor plate substantially encircling the first capacitor plate. The first capacitor plate has a portion configured to vibrate in response to an acoustic wave. The second capacitor plate is fixed and has slanted edges facing the first capacitor plate.

摘要翻译： 集成电路结构包括电容器，其还包括由多晶硅形成的第一电容器板和基本上环绕第一电容器板的第二电容器板。 第一电容器板具有被配置为响应于声波而振动的部分。 第二电容器板是固定的并且具有面向第一电容器板的倾斜边缘。

公开(公告)号：US20110156245A1

公开(公告)日：2011-06-30

申请号：US12651002

申请日：2009-12-31

申请人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Chun-Wen Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Shang-Ying Tsai ,  Te-Hsi Lee

发明人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Chun-Wen Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Shang-Ying Tsai ,  Te-Hsi Lee

IPC分类号： H01L23/34 ,  H01L21/50 ,  F28D15/02

CPC分类号： H01L23/427 ,  B81B7/0093 ,  B81B2207/99 ,  F28D15/02 ,  F28F3/048 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit, a method of operating the integrated circuit, and a method of fabricating the integrated circuit are disclosed. According to one of the broader forms of the invention, a method and apparatus involve an integrated circuit that includes a heat transfer structure having a chamber that has a fluid disposed therein and that extends between a heat generating portion and a heat absorbing portion. Heat is absorbed into the fluid from the heat generating portion, and the fluid changes from a first phase to a second phase different from the first phase when the heat is absorbed. Heat is released from the fluid to the heat absorbing portion, and the fluid changes from the second phase to the first phase when the heat is released.

摘要翻译： 公开了集成电路，操作集成电路的方法以及制造集成电路的方法。 根据本发明的一个更广泛的形式，一种方法和装置包括集成电路，该集成电路包括一个传热结构，该传热结构具有一个具有设置在其中的流体并且在发热部分和吸热部分之间延伸的腔室。 热量从发热部分吸收到流体中，并且当吸收热量时，流体从第一相位变化到与第一相位不同的第二相位。 热量从流体释放到吸热部分，并且当释放热量时，流体从第二相变为第一相。

公开(公告)号：US20100301433A1

公开(公告)日：2010-12-02

申请号：US12751598

申请日：2010-03-31

申请人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jiou-Kang Lee ,  Jung-Huei Peng

发明人： Ting-Hau Wu ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jiou-Kang Lee ,  Jung-Huei Peng

IPC分类号： H01L29/84

CPC分类号： B81C1/00134 ,  G01P15/125 ,  G01P15/18

摘要： An integrated circuit structure includes a triple-axis accelerometer, which further includes a proof-mass formed of a semiconductor material; a first spring formed of the semiconductor material and connected to the proof-mass, wherein the first spring is configured to allow the proof-mass to move in a first direction in a plane; and a second spring formed of the semiconductor material and connected to the proof-mass. The second spring is configured to allow the proof-mass to move in a second direction in the plane and perpendicular to the first direction. The triple-axis accelerometer further includes a conductive capacitor plate including a portion directly over, and spaced apart from, the proof-mass, wherein the conductive capacitor plate and the proof-mass form a capacitor; an anchor electrode contacting a semiconductor region; and a transition region connecting the anchor electrode and the conductive capacitor plate, wherein the transition region is slanted.

摘要翻译： 集成电路结构包括三轴加速度计，其还包括由半导体材料形成的校准质量; 由所述半导体材料形成并连接到所述证明块的第一弹簧，其中所述第一弹簧被构造成允许所述证明物质在平面中沿第一方向移动; 以及由半导体材料形成并连接到校验块的第二弹簧。 第二弹簧被构造成允许证明物质在平面中并且垂直于第一方向在第二方向上移动。 三轴加速度计进一步包括导电电容器板，其包括直接在其上并与隔离物隔开的部分，其中导电电容器板和校验块形成电容器; 与半导体区域接触的锚定电极; 以及连接所述锚定电极和所述导电电容器板的过渡区域，其中所述过渡区域是倾斜的。

公开(公告)号：US20100225708A1

公开(公告)日：2010-09-09

申请号：US12683550

申请日：2010-01-07

申请人： Jung-Huei Peng ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Ting-Hau Wu

发明人： Jung-Huei Peng ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Shang-Ying Tsai ,  Ting-Hau Wu

IPC分类号： B41J2/05

CPC分类号： B41J2/14088 ,  B41J2/14016 ,  B41J2/16 ,  B41J2/1626 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1646

摘要： MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.

摘要翻译： 描述了MEMS器件及其制造方法。 在一个实施例中，MEMS器件包括设置在衬底上的底部合金层。 内层材料层设置在底层合金层上，顶层合金层设置在内层材料层上，顶层合金层和底层合金层均含有至少两种金属的合金，其中内层含有合金和氮 。 顶部合金层，内部材料层和底部合金层形成MEMS特征。