公开(公告)号：US10468547B2

公开(公告)日：2019-11-05

申请号：US14906764

申请日：2013-12-20

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan Jeong ,  Jong Hwan Lee ,  Ho Sung Kim ,  Chang Heon Kim

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/028

Abstract: Disclosed are a silicon wafer having a complex structure, a method of fabricating the same, and a solar cell using the same, wherein the silicon wafer is configured such that an oriented silicon wafer has a pyramid pattern formed through wet etching and additionally has nanowires formed in the direction in which silicon crystals are oriented on the pyramid pattern, and is further doped with POCl3.

公开(公告)号：US10069031B2

公开(公告)日：2018-09-04

申请号：US15592421

申请日：2017-05-11

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

IPC: H01L31/18 ,  H01L31/068 ,  C23C14/58 ,  H01L31/028

Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

公开(公告)号：US10020488B2

公开(公告)日：2018-07-10

申请号：US14766874

申请日：2013-08-20

Applicant: Korea Institute of Industrial Technology

Inventor： Ho Sung Kim ,  Sun Woo Yang ,  Kyeong Wan Kim ,  Chae Hwan Jeong ,  Tae Won Kim ,  Duck Rye Chang ,  Min Young Kim

IPC: H02J7/00 ,  H01M4/04 ,  H01M4/505 ,  H01M4/525 ,  H01M4/1391 ,  H01M10/052 ,  C01G53/00 ,  H01M4/131 ,  H01M4/485 ,  H01M10/44 ,  H01M4/38 ,  H01M10/04 ,  H01M4/02 ,  H01M2/16

CPC classification number: H01M4/0471 ,  C01G53/50 ,  C01P2002/72 ,  C01P2006/40 ,  H01M2/1653 ,  H01M4/0404 ,  H01M4/0435 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/382 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M10/0427 ,  H01M10/052 ,  H01M10/44 ,  H01M2004/027 ,  Y02T10/7011

Abstract: This disclosure synthesizes an anodic composite material Li(LixNiyCozMnwO2+α) of Li2MnO3 series whose theoretical capacity is a level of about 460 mAh/g, and to produce an electrode of a high capacity using the synthesized anodic composite material. Also provided is a method for charging and discharging the electrode. Here, the method for producing an anodic composite material for a lithium secondary battery includes the steps of: mixing a nickel nitrate solution, a manganese nitrate solution, and a cobalt nitrate solution to produce a starting material solution; and mixing the starting material solution with a complexing agent so as to produce an anodic composite material Li(LixNiyCozMnwO2+α) of Li2MnO3 series by means of coprecipitation.

公开(公告)号：US20170250303A1

公开(公告)日：2017-08-31

申请号：US15592421

申请日：2017-05-11

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

IPC: H01L31/18 ,  H01L31/028

CPC classification number: H01L31/182 ,  C23C14/5806 ,  H01L31/028 ,  H01L31/068 ,  H01L31/1872 ,  H05K999/99 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

公开(公告)号：US20160380304A1

公开(公告)日：2016-12-29

申请号：US14902488

申请日：2014-06-27

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Ho Sung Kim ,  Tae Won Kim ,  Duck Rye Chang ,  Jong Ho Lee ,  Kyeong Wan Kim ,  Min Young Kim

IPC: H01M10/0562 ,  C04B35/64 ,  C04B35/626 ,  H01M10/0525 ,  C04B35/50

CPC classification number: H01M10/0562 ,  C04B35/486 ,  C04B35/50 ,  C04B35/6261 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3203 ,  C04B2235/3227 ,  C04B2235/3248 ,  C04B2235/6567 ,  C04B2235/761 ,  C04B2235/762 ,  C04B2235/764 ,  C04B2235/765 ,  C04B2235/80 ,  H01M10/0525 ,  H01M2300/0077 ,  Y02T10/7011

Abstract: The method for manufacturing a solid electrolyte using an LLZ material for a lithium-ion battery comprises the steps of: providing a starting material in which lanthanum nitrate [La(NO3)3.6H2O] and zirconium nitrate [ZrO(NO3)2.6H2O] are mixed at a mole ratio of 3:2; forming an aqueous solution by dissolving the starting material; forming a precipitate by putting ammonia, which is a complex agent, and sodium hydroxide, which adjusts the pH of a reactor, into the aqueous solution, mixing the same, and then co-precipitating the mixture; forming a primary precursor powder by cleaning, drying and pulverizing the precipitate; forming a secondary precursor powder by mixing lithium powder [LiOH.H2O] with the primary precursor powder and ball-milling the mixture so as to solidify the lithium; and forming a solid electrolyte powder by heat-treating the secondary precursor powder.

Abstract translation: 使用锂离子电池用LLZ材料制造固体电解质的方法包括以下步骤：提供硝酸镧[La（NO 3）3·6H 2 O]和硝酸锆[ZrO（NO 3）2·6H 2 O]为原料的原料 以3：2的摩尔比混合; 通过溶解原料形成水溶液; 通过将作为复合剂的氨和将反应器的pH调节的氢氧化钠加入到水溶液中，使其混合，然后使该混合物共沉淀而形成沉淀物; 通过清洗，干燥和粉碎沉淀物形成初级前体粉末; 通过将锂粉末[LiOH·H 2 O]与初级前体粉末混合并对混合物进行球磨以使锂固化，形成二次前体粉末; 并通过热处理二次前体粉末形成固体电解质粉末。

公开(公告)号：US20140306664A1

公开(公告)日：2014-10-16

申请号：US14353279

申请日：2012-10-19

Applicant: Korea Institute of Industrial Technology

Inventor： Ho Sung Kim ,  Ju Hee Kang ,  Ik Hyun Oh ,  Seong Jae Boo ,  Duck Rye Chang ,  Tae Won Kim ,  Sung Hee Park ,  Kyeong Wan Kim

IPC: H02J7/00 ,  H01M4/04 ,  C01D15/02

CPC classification number: H02J7/00 ,  C01D15/02 ,  H01M4/0402 ,  H01M4/505 ,  H01M4/525 ,  H01M10/052 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011

Abstract: The present invention relates to the manufacture of a high capacity electrode by synthesizing an excellent Li2MnO3-based composite material Li(LixNiyCozMnwO2) to improve the characteristics of an inactive Li2MnO3 material with a specific capacity of about 460 mAh/g. Here, a manufacturing method of a cathode material for a lithium secondary battery uses a Li2MnO3-based composite material Li(LixNiyCozMnwO2) by reacting a starting material wherein a nickel nitrate solution, a manganese nitrate solution and a cobalt nitrate solution are mixed, with a complex agent by co-precipitation.

Abstract translation: 本发明涉及通过合成优异的Li 2 MnO 3基复合材料Li（Li x Ni y Co z Mn n O 2 O 2）来制造高容量电极，以改善比电容为约460mAh / g的无活性Li 2 MnO 3材料的特性。 这里，锂二次电池用正极材料的制造方法使用混合有硝酸镍溶液，硝酸锰溶液和硝酸钴溶液的原料与Li2MnO3系复合材料Li（Li x Ni y Co z Mn n O 2 O 2） 复合剂通过共沉淀。