公开(公告)号：US06872248B2

公开(公告)日：2005-03-29

申请号：US10400636

申请日：2003-03-28

申请人： Masaki Mizutani ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida

发明人： Masaki Mizutani ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida

IPC分类号： C30B19/06 ,  C30B29/06 ,  H01L21/208 ,  C30B19/04 ,  C30B19/10

CPC分类号： C30B19/068 ,  C30B19/062 ,  Y10T117/10 ,  Y10T117/1024

摘要： A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.

摘要翻译： 一种液相生长方法，包括将基底衬底浸入容纳在坩埚中的待生长的待反应物种溶液的溶液中并在所述基底上生长晶体膜，其特征在于，封盖构件保持在 所述溶液在将所述基材浸入所述溶液中之前，将所述基材浸入所述溶液中，并且所述封盖构件在所述溶液中沉降。 适用于实施所述液相生长过程的液相生长装置。

公开(公告)号：US20060194417A1

公开(公告)日：2006-08-31

申请号：US10530189

申请日：2003-10-10

申请人： Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki ,  Masaki Mizutani

发明人： Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki ,  Masaki Mizutani

IPC分类号： H01L31/0376 ,  H01L21/20

CPC分类号： C30B29/06 ,  C30B11/00 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2×1018 cm−3 to 5×1019 cm−3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.

摘要翻译： 一种用于太阳能电池的多晶硅衬底，其通过在通过熔化冶金级硅获得的多晶硅锭切片并进行单向凝固而获得的基底表面上生长高纯度多晶硅层而形成，其中执行单向凝固 在通过以2×10 18 cm -3至5×10 19 cm -3的量向熔融冶金级硅中加入B制备的熔体上， 3，根据熔体中的浓度制造多晶硅锭。 利用这种结构，可以容易地获得具有电阻率的多晶硅基板和适合制造太阳能电池的导电类型。

公开(公告)号：US07022181B2

公开(公告)日：2006-04-04

申请号：US10014418

申请日：2001-12-14

申请人： Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B19/00

CPC分类号： C30B19/062 ,  C30B19/00 ,  C30B29/06 ,  Y10S117/911

摘要： In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.

公开(公告)号：US06824609B2

公开(公告)日：2004-11-30

申请号：US10229123

申请日：2002-08-28

申请人： Tetsuro Saito ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Masaki Mizutani

发明人： Tetsuro Saito ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Masaki Mizutani

IPC分类号： C30B1900

CPC分类号： C30B19/064 ,  C30B19/02 ,  C30B19/06 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1016 ,  Y10T117/1024

摘要： A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.

摘要翻译： 提供一种液相生长方法，其包括将种子基底浸入溶液中，其中晶体原料熔化在其中并在基底上生长晶体，其中在容器的底部设置有用于调节流动的翅片 从容器中沿径向外侧的中心部分的溶液; 流量调节板设置在容器的内侧壁附近，用于调节溶液从底部向上的流动; 并且通过翅片和流动调节板的作用调节溶液的流动以使溶液与种子基底接触来旋转容器。 因此，提供了一种液相生长方法和装置，其能够提供高生长速率，并且即使在一批中填充多个基板时，基板之间或同一基板内的生长速度几乎没有差异。

公开(公告)号：US06500731B1

公开(公告)日：2002-12-31

申请号：US09662604

申请日：2000-09-14

申请人： Katsumi Nakagawa ,  Shoji Nishida

发明人： Katsumi Nakagawa ,  Shoji Nishida

IPC分类号： H01L2146

CPC分类号： H01L21/6835 ,  H01L21/76259 ,  H01L21/76838 ,  H01L31/022433 ,  H01L31/0475 ,  H01L31/048 ,  H01L31/1804 ,  H01L31/1896 ,  H01L2221/68359 ,  H01L2924/3025 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for producing a semiconductor device module comprises the steps of forming a first substrate having a separation layer having thereon a plurality of independent semiconductor layers and semiconductor devices individually formed on the plurality of semiconductor layers, electrically connecting the semiconductor devices one another on the first substrate, and separating the plurality of semiconductor layers from the first substrate at the separation layer to transfer the semiconductor layers to a second substrate.

摘要翻译： 一种制造半导体器件模块的方法包括以下步骤：形成具有分离层的第一衬底，其上具有多个独立的半导体层和分别形成在所述多个半导体层上的半导体器件，所述半导体器件分别形成在所述多个半导体层上， 衬底，并且在分离层处将多个半导体层与第一衬底分离，以将半导体层转移到第二衬底。

公开(公告)号：US06391108B2

公开(公告)日：2002-05-21

申请号：US09208377

申请日：1998-12-10

申请人： Shoji Nishida ,  Katsumi Nakagawa ,  Noritaka Ukiyo ,  Masaaki Iwane

发明人： Shoji Nishida ,  Katsumi Nakagawa ,  Noritaka Ukiyo ,  Masaaki Iwane

IPC分类号： C30B1900

CPC分类号： C30B19/06 ,  C30B19/02 ,  C30B29/06

摘要： Provided are a liquid phase growth method of silicon crystal comprising a step of injecting a source gas containing at least silicon atoms into a solvent to decompose the source gas and, simultaneously therewith, dissolving the silicon atoms into the solvent, thereby supplying the silicon atoms into the solvent, and a step of dipping or contacting a substrate into or with the solvent, thereby growing a silicon crystal on the substrate; and a method of producing a solar cell utilizing the aforementioned method. Also provided is a liquid phase growth apparatus of a silicon crystal comprising means for holding a solvent in which silicon atoms are dissolved, and means for dipping or contacting a substrate into or with the solvent, the apparatus further comprising means for injecting a source gas containing at least silicon atoms into the solvent. These provide a liquid phase growth method of a silicon crystal and a production method of a solar cell each having high volume productivity and permitting continuous growth.

摘要翻译： 提供了一种硅晶体的液相生长方法，其包括将至少含有硅原子的源气体注入溶剂中以分解源气体，同时将硅原子溶解到溶剂中，从而将硅原子供给到 溶剂，以及将基材浸渍或接触溶剂或与溶剂接触的步骤，从而在基材上生长硅晶体; 以及利用上述方法制造太阳能电池的方法。 还提供了一种硅晶体的液相生长装置，其包括用于保持其中硅原子溶解的溶剂的装置，以及用于将基底浸入或接触溶剂或与溶剂接触的装置，该装置还包括用于注入含有 至少硅原子进入溶剂。 这些提供硅晶体的液相生长方法和各自具有高体积生产率并允许连续生长的太阳能电池的制造方法。

公开(公告)号：US07282190B2

公开(公告)日：2007-10-16

申请号：US10563115

申请日：2005-05-17

申请人： Masaki Mizutani ,  Shoji Nishida ,  Katsumi Nakagawa

发明人： Masaki Mizutani ,  Shoji Nishida ,  Katsumi Nakagawa

IPC分类号： C01B33/26 ,  C30B15/20

CPC分类号： H01L31/182 ,  C30B19/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02658 ,  Y02E10/546 ,  Y02P70/521

摘要： A solar cell is produced by dipping a multicrystalline silicon substrate 28 in a solution 24 containing silicon, growing a silicon layer on the substrate 28 while decreasing with time the temperature drop rate of the solution during the dipping of the substrate in the solution, and forming a pn junction in the silicon layer. Thereby, there is provided a silicon layer production method that can form a thick layer while restraining the degree of roughness, whereby a low-cost, multicrystalline-silicon solar cell production method is provided that realizes both a large current and a high FF.

摘要翻译： 通过将多晶硅基板28浸渍在含硅的溶液24中来生产太阳能电池，在衬底28上生长硅层，同时随着时间的推移在衬底浸入溶液中时溶液的温度降低速率降低，并形成 硅层中的pn结。 因此，提供了可以在抑制粗糙度的同时形成厚层的硅层制造方法，由此提供实现大电流和高FF的低成本多晶硅太阳能电池制造方法。

公开(公告)号：US20050124139A1

公开(公告)日：2005-06-09

申请号：US10505979

申请日：2003-02-21

申请人： Masaki Mizutani ,  Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

发明人： Masaki Mizutani ,  Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

IPC分类号： C01B33/02 ,  C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L21/208 ,  H01L31/18 ,  H01L21/301 ,  H01L21/46 ,  H01L21/78

CPC分类号： C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.

摘要翻译： 提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。 切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

公开(公告)号：US06384313B2

公开(公告)日：2002-05-07

申请号：US09790589

申请日：2001-02-23

申请人： Katsumi Nakagawa ,  Shoji Nishida ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Shoji Nishida ,  Yukiko Iwasaki

IPC分类号： H01L2500

CPC分类号： H01L31/042 ,  H01L31/0443 ,  H01L31/0504 ,  Y02E10/50

摘要： A solar cell module comprises a plurality of unit cells connected in series, each of the unit cells comprising in this order an electrode, a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type. The electrode has a region not covered with the first semiconductor layer. The second semiconductor layer has a main region and a subregion which are separated by a groove. The main region of the second semiconductor layer in one unit cell is electrically connected to the region of the electrode not covered with the first semiconductor layer in another unit cell adjacent to the one unit cell. The region of the electrode not covered with the first semiconductor layer in the one unit cell is electrically connected to the subregion of the second semiconductor layer in the another unit cell. With this structure it is possible to simplify the formation of a bypass diode invention therefore provide solar cell module with high reliability at a low cost.

摘要翻译： 太阳能电池模块包括串联连接的多个单元电池，每个单电池依次包括电极，具有第一导电类型的第一半导体层和具有第二导电类型的第二半导体层。 电极具有未被第一半导体层覆盖的区域。 第二半导体层具有由沟槽分隔开的主区域和子区域。 一个单元电池中的第二半导体层的主要区域与在一个单位电池相邻的另一单元电池中未被第一半导体层覆盖的电极的区域电连接。 在一个单元电池中没有被第一半导体层覆盖的电极的区域电连接到另一个晶胞中的第二半导体层的子区域。 利用这种结构，可以简化旁路二极管发明的形成，因此以低成本提供高可靠性的太阳能电池模块。

公开(公告)号：US06231667B1

公开(公告)日：2001-05-15

申请号：US09200867

申请日：1998-11-27

申请人： Masaaki Iwane ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Shoji Nishida ,  Noritaka Ukiyo

发明人： Masaaki Iwane ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Shoji Nishida ,  Noritaka Ukiyo

IPC分类号： C30B1906

CPC分类号： C30B19/062 ,  C30B19/00 ,  C30B29/06

摘要： A liquid phase growth apparatus of a dipping system has a plurality of liquid phase growth chambers and liquid phase growth operations of semiconductors are carried out on a plurality of substrates in the growth chambers. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that liquid phase growth of a semiconductor on one substrate is carried out in the liquid phase growth chamber and that an annealing operation of another substrate different from the aforementioned substrate is carried out in the annealing chamber. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that a semiconductor material is dissolved into a solvent in the liquid phase growth chamber and that the annealing operation of a substrate is carried out in the annealing chamber. These provide the liquid phase growth apparatus for formation of semiconductor layer in the dipping system, suitably applicable to mass production of large-area devices such as solar cells. In addition, the liquid phase growth method is also provided.

摘要翻译： 浸渍系统的液相生长装置具有多个液相生长室，并且在生长室中的多个基板上进行半导体的液相生长操作。 浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且构造成使得在液相生长室中进行一个基板上的半导体的液相生长，并且退火操作 在退火室中进行与上述基板不同的另一基板。 浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且被构造成使半导体材料溶解在液相生长室中的溶剂中，并且基板的退火操作为 在退火室中进行。 这些提供了用于在浸渍系统中形成半导体层的液相生长装置，适用于批量生产诸如太阳能电池的大面积装置。 此外，还提供了液相生长方法。