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21.发明申请DIAMOND TOOL, SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD OF SYNTHESIZING SINGLE CRYSTAL DIAMOND, AND DIAMOND JEWLRY 有权钻石工具，合成单晶金刚石和合成单晶金刚石和金刚石钻石的方法公开(公告)号：US20070033810A1
公开(公告)日：2007-02-15
申请号：US10572708
申请日：2004-10-08
CPC分类号： B23B27/20 , B01J3/06 , B01J3/062 , B01J2203/061 , B01J2203/062 , B01J2203/0655 , B01J2203/068 , B23B27/14 , B23B2240/08 , B24B53/12 , C30B29/04
摘要： Various types of diamond tools are provided by utilizing the fact that a synthetic single crystal diamond for use in a tool having a nitrogen content of 3 ppm or less exhibits an enhanced hardness in a (100) plane in a direction and simultaneously the reduction in defects. The above synthetic single crystal diamond is synthesized by the temperature difference method under an ultra high pressure at high temperature and contains, in its crystals, nickel introduced by atomic substitution or boron and nickel introduced by atomic substitution.
摘要翻译： 通过利用在氮含量为3ppm以下的工具中使用的合成单晶金刚石在（111）方向的（100）面上显示增强的硬度，同时提供了各种类型的金刚石工具 减少缺陷 上述合成单晶金刚石通过温度差法在高温下高温合成，并在其晶体中含有通过原子取代引入的镍或通过原子取代引入的硼和镍。
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公开(公告)号：US20060053969A1
公开(公告)日：2006-03-16
申请号：US10536879
申请日：2003-11-27
申请人： Takashi Harada , Naohiro Toda , Hitoshi Sumiya
发明人： Takashi Harada , Naohiro Toda , Hitoshi Sumiya
IPC分类号： C22C1/04
摘要： A thermoelectric material has an average crystal particle size of at most 50 nm and has a relative density of at least 85%. A method of manufacturing a thermoelectric material includes the steps of preparing a fine powder and sintering or compacting the fine powder under a pressure of at least 1.0 GPa and at most 10 GPa.
摘要翻译： 热电材料的平均结晶粒径为50nm以下，相对密度为85％以上。 制造热电材料的方法包括在至少1.0GPa和至多10GPa的压力下制备细粉末并烧结或压实细粉末的步骤。
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公开(公告)号：US06716544B2
公开(公告)日：2004-04-06
申请号：US10129380
申请日：2002-05-03
申请人： Shinya Uesaka , Hitoshi Sumiya
发明人： Shinya Uesaka , Hitoshi Sumiya
IPC分类号： B32B1800
CPC分类号： C04B41/009 , C04B41/5068 , C04B41/52 , C04B41/87 , C04B41/89 , Y10T428/12576 , Y10T428/12736 , Y10T428/12806 , Y10T428/24967 , Y10T428/24983 , Y10T428/265 , C04B41/4529 , C04B41/5062 , C04B41/507 , C04B41/524 , C04B41/522 , C04B35/5831
摘要： A coated cubic boron nitride (cBN) sintered body most suitable for a cutting tool having excellent resistance to wear and heat in the high-speed cutting of steel has been developed. The sintered body comprises (a) a base material made of a sintered body comprising at least 99.5 vol. % cBN and (b) a hard coating 0.1 to 10 &mgr;m in thickness formed on at least part of the surface of the base material by the PVD method. It is desirable that the hard coating comprise at least one compound layer consisting mainly of (a) at least one metal element selected from Al and the IV a-group elements and (b) at least one element selected from C, N, and O. It is desirable to provide between the base material and the hard coating an intermediate layer comprising a compound consisting mainly of boron and at least one metal element selected from the IV a-group elements.
摘要翻译： 已经开发了最适合于在钢的高速切削中具有优异的耐磨性和耐热性的切削工具的涂覆立方氮化硼（cBN）烧结体。 烧结体包括（a）由烧结体制成的基体材料，其包含至少99.5体积％ ％cBN和（b）通过PVD方法形成在基材的至少部分表面上的厚度为0.1至10μm的硬涂层。 期望的是，硬涂层包含至少一个主要由（a）至少一种选自Al和IVa族元素的金属元素组成的化合物层，和（b）选自C，N和O中的至少一种元素 期望在基材和硬涂层之间提供包含主要由硼组成的化合物和选自IVa族元素的至少一种金属元素的中间层。
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公开(公告)号：US6030595A
公开(公告)日：2000-02-29
申请号：US684725
申请日：1996-07-22
CPC分类号： B01J3/062 , C01B31/06 , C01B33/06 , B01J2203/061 , B01J2203/062 , B01J2203/0655 , B01J2203/068
摘要： A high purity synthetic diamond with less impurities, crystals defects, strains, etc. can be provided, in which the nitrogen content is at most 10 ppm, preferably at most 0.1 ppm and the boron content is at most 1 ppm, preferably at most 0.1 ppm or in which nitrogen atoms and boron atoms are contained in the crystal and the difference between the number of the nitrogen atoms and that of the boron atoms is at most 1.times.10.sup.17 atoms/cm.sup.3. The strain-free synthetic diamond can be produced by a process for the production of a strain-free synthetic diamond by the temperature gradient method, which comprises using a carbon source having a boron content of at most 10 ppm and a solvent metal having a boron content of at most 1 ppm and adding a nitrogen getter to the solvent metal, thereby synthesizing the diamond.
摘要翻译： 可以提供具有较少杂质，晶体缺陷，应变等的高纯度合成金刚石，其中氮含量为至多10ppm，优选至多0.1ppm，硼含量为至多1ppm，优选至多0.1 ppm或其中氮原子和硼原子包含在晶体中，并且氮原子数与硼原子数之间的差异至多为1×10 17 atoms / cm 3。 无菌合成金刚石可以通过温度梯度法生产无应变合成金刚石的方法制备，该方法包括使用硼含量至多为10ppm的碳源和具有硼的溶剂金属 含量至多1ppm，并向溶剂金属中加入氮气吸收剂，从而合成金刚石。
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公开(公告)号：US4699687A
公开(公告)日：1987-10-13
申请号：US909263
申请日：1986-09-19
申请人： Shuji Yazu , Hitoshi Sumiya , Junji Degawa
发明人： Shuji Yazu , Hitoshi Sumiya , Junji Degawa
CPC分类号： C30B9/00 , B01J3/062 , C30B29/403 , B01J2203/061 , B01J2203/0645 , B01J2203/0655 , B01J2203/066 , B01J2203/068 , Y10S117/90 , Y10T117/1096
摘要： Cubic system boron nitride crystals are synthesized by using a synthesizing vessel separated into a plurality of synthesizing chambers by one or more partition layers. After preparing the synthesizing vessel it is heated under extra-high pressure to achieve a required temperature gradient from chamber to chamber. A plurality of solvents having different eutectic temperatures with respect to boron nitride (BN) sources are placed in the chambers according to the temperature gradient. The BN sources are placed in contact with solvent portions heated to relatively high temperatures. At least one seed crystal is placed in each solvent portion heated to relatively low temperatures. At least one cubic system boron nitride crystal is grown in each of the solvents in the chambers by the above heating of the synthesizing vessel under conditions of ultra-high pressure and temperatures assuring the required temperature gradient.
摘要翻译： 通过使用通过一个或多个分隔层分离成多个合成室的合成容器来合成立方体系的氮化硼晶体。 在制备合成容器之后，在超高压下加热以达到从室到室所需的温度梯度。 根据温度梯度，将多个相对于氮化硼（BN）源的共晶温度的溶剂放置在室中。 BN源与被加热到较高温度的溶剂部分接触。 在加热到较低温度的每个溶剂部分中放置至少一种晶种。 在超高压和温度条件下，通过合成容器的上述加热，在室内的每种溶剂中生长至少一种立方晶系氮化硼晶体，以确保所需的温度梯度。
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公开(公告)号：US09714197B2
公开(公告)日：2017-07-25
申请号：US14235763
申请日：2012-07-26
CPC分类号： C04B35/52 , B01J3/062 , B01J2203/061 , B01J2203/0655 , C01B32/25 , C04B2235/42 , C04B2235/427 , Y10T428/2982
摘要： Nano polycrystalline diamond is composed of carbon, an element of different type which is an element other than carbon and is added to be dispersed in carbon at an atomic level, and an inevitable impurity. The polycrystalline diamond has a crystal grain size not greater than 500 nm. The polycrystalline diamond can be fabricated by subjecting graphite in which the element of different type which is an element other than carbon has been added to be dispersed in carbon at an atomic level to heat treatment within high-pressure press equipment.
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公开(公告)号：US20140219907A1
公开(公告)日：2014-08-07
申请号：US14241855
申请日：2012-08-30
申请人： Kazuhiro Ikeda , Hitoshi Sumiya
发明人： Kazuhiro Ikeda , Hitoshi Sumiya
CPC分类号： C30B29/04 , B01J3/062 , B01J2203/061 , B01J2203/062 , B01J2203/0655 , B01J2203/068 , C30B7/10 , C30B25/00
摘要： Single-crystal diamond is composed of carbon in which a concentration of a carbon isotope 12C is not lower than 99.9 mass % and a plurality of inevitable impurities other than carbon. The inevitable impurities include nitrogen, boron, hydrogen, and nickel, and a total content of nitrogen, boron, and hydrogen of the plurality of inevitable impurities is not higher than 0.01 mass %. In order to manufacture single-crystal diamond, initially, a hydrocarbon gas in which a concentration of the carbon isotope 12C is not lower than 99.9 mass % is subjected to denitrification.
摘要翻译： 单晶金刚石由碳同位素12C的浓度不低于99.9质量％的碳和除碳以外的多个不可避免的杂质构成。 不可避免的杂质包括氮，硼，氢和镍，并且多个不可避免的杂质中的氮，硼和氢的总含量不高于0.01质量％。 为了制造单晶金刚石，首先，碳同位素12C的浓度不低于99.9质量％的烃气体进行脱氮。
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公开(公告)号：US20100043520A1
公开(公告)日：2010-02-25
申请号：US12523545
申请日：2008-01-18
申请人： Hitoshi Sumiya , Makoto Yukawa
发明人： Hitoshi Sumiya , Makoto Yukawa
IPC分类号： B21C3/02
CPC分类号： B21C3/025 , B01J3/062 , B01J2203/061 , B01J2203/0625 , B01J2203/0655 , B01J2203/068 , B01J2203/0685 , B21C3/18 , B82Y30/00 , C04B35/52 , C04B35/645 , C04B2235/422 , C04B2235/425 , C04B2235/427 , C04B2235/656 , C04B2235/781 , C04B2235/783 , C04B2235/785 , C30B29/605
摘要： One object of the present invention is to provide a wire drawing die excellent in strength and wear resistance. The wire drawing die has a core formed using highly hard diamond polycrystalline body made substantially only of diamond and produced by directly converting a raw material composition including a non-diamond type carbon material into diamond and sintering the diamond at an ultra high pressure and an ultra high temperature without adding a sintering aid or a catalyst, the polycrystalline body having a mixed construction including fine-grained diamond crystals with a maximum grain size of less than or equal to 100 nm and an average grain size of less than or equal to 50 nm and plate-like or particulate coarse-grained diamond crystals with a minimum grain size of greater than or equal to 50 nm and a maximum grain size of less than or equal to 10000 nm.
摘要翻译： 本发明的一个目的是提供一种强度和耐磨性优异的拉丝模具。 拉丝模具具有使用基本上仅由金刚石制成的高硬度金刚石多晶体形成的芯，其通过将包含非金刚石型碳材料的原料组合物直接转化为金刚石并以超高压和超高压烧结金刚石 高温而不添加烧结助剂或催化剂，所述多晶体具有混合结构，包括最大粒度小于或等于100nm的细晶粒金刚石晶体和小于或等于50nm的平均晶粒尺寸 以及最小晶粒尺寸大于或等于50nm并且最大晶粒尺寸小于或等于10000nm的板状或颗粒状粗粒金刚石晶体。
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公开(公告)号：US20090305039A1
公开(公告)日：2009-12-10
申请号：US11988891
申请日：2006-07-21
申请人： Hitoshi Sumiya
发明人： Hitoshi Sumiya
CPC分类号： B01J3/062 , B01J2203/0625 , B01J2203/0655 , B01J2203/068 , B01J2203/0685 , B82Y30/00 , C04B35/52 , C04B35/6261 , C04B35/645 , C04B2235/422 , C04B2235/425 , C04B2235/427 , C04B2235/528 , C04B2235/5288 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/656 , C04B2235/78 , C04B2235/781 , C04B2235/785 , C04B2235/96 , Y10T428/2982
摘要： There are provided sufficiently strong, hard, and heat resistant, dense and homogenous polycrystalline diamond applicable to cutting tools, dressers, dies and other working tools and excavation bits and the like, and a cutting tool having a cutting edge of the polycrystalline diamond. The polycrystalline diamond is formed substantially only of diamond formed using a composition of material containing a non diamond type carbon material, the composition of material being converted directly into diamond and sintered at ultra high pressure and ultra high temperature without aid of a sintering aid or a catalyst, and has a mixed microstructure having a fine crystal grain of diamond having a maximal grain size of at most 100 nm and an average grain size of at most 50 nm and a coarse crystal grain of diamond in the form of one of a platelet and a granule having a grain size of at least 50 nm and at most 10,000 nm.
摘要翻译： 提供了适用于切割工具，修整器，模具和其他工作工具和挖掘钻头等的足够坚固，坚硬和耐热，致密且均匀的多晶金刚石，以及具有多晶金刚石切割边缘的切割工具。 多晶金刚石基本上仅由使用含有非金刚石型碳材料的材料的组合物形成的金刚石形成，材料的组成直接转化为金刚石并且在超高压和超高温下烧结而无助于烧结助剂或 催化剂，并且具有具有最大粒度为至多100nm，平均粒径为至多50nm的金刚石微细晶粒的混合微观结构，以及金刚石的粗晶粒，其形式为血小板和 颗粒尺寸为至少50nm且至多10,000nm的颗粒。
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30.发明申请Process for producing n-type semiconductor diamond and n-type semiconductor diamond 审中-公开制造n型半导体金刚石和n型半导体金刚石的方法公开(公告)号：US20060177962A1
公开(公告)日：2006-08-10
申请号：US10541184
申请日：2003-12-22
IPC分类号： H01L21/00
CPC分类号： H01L21/0415 , C30B29/04 , H01L21/265 , H01L29/167
摘要： A method of manufacturing n-type semiconductor diamond by the present invention is characterized in producing diamond incorporating Li and N by implanting Li ions into, so that 10 ppm thereof will be contained in, single-crystal diamond incorporating 10 ppm or more N, or else, in doping single-crystal diamond with Li and N ions, by implanting the ions so that ion-implantation depths at which the post-implantation Li and N concentrations each are 10 ppm or more will overlap, and thereafter annealing the diamond in a temperature range of from 800° C. or more to less than 1800° C. to electrically activate the Li and N and restore the diamond crystalline structure. In the present invention, n-type semiconductor diamond incorporates, from the surface of the crystal to the same depth, 10 ppm or more of each of Li and N, wherein its sheet resistance is 107 Ω/□ or less.
摘要翻译： 通过本发明制造n型半导体金刚石的方法的特征在于通过将Li离子注入到Li中并掺入N的金刚石，使得其中含有10ppm将包含在包含10ppm或更多N的单晶金刚石中，或 否则，通过注入离子来掺杂具有Li和N离子的单晶金刚石，使得注入后的Li和N浓度各自为10ppm以上的离子注入深度将重叠，然后在金刚石中退火 温度范围为800℃以上至小于1800℃，以电激活Li和N并恢复金刚石晶体结构。 在本发明中，n型半导体金刚石从晶体表面到相同的深度掺入了Li和N的10ppm以上，其中薄膜电阻为10Ω/ □以下
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